The Datasheet Archive

BUZ84 datasheet (21)

Part Manufacturer Description Type PDF
BUZ84 Philips Semiconductors PowerMOS Transistor Original PDF
BUZ84 Motorola Switchmode Datasheet Scan PDF
BUZ84 Motorola European Master Selection Guide 1986 Scan PDF
BUZ84 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
BUZ84 Others Shortform Datasheet & Cross References Data Scan PDF
BUZ84 Others Shortform Transistor PDF Datasheet Scan PDF
BUZ84 Others Semiconductor Master Cross Reference Guide Scan PDF
BUZ84 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUZ84 Others FET Data Book Scan PDF
BUZ84 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUZ84 Semelab MOS Power Transistor Scan PDF
BUZ84 Siemens Power Transistors Scan PDF
BUZ84A Philips Semiconductors PowerMOS Transistor Original PDF
BUZ84A Motorola Switchmode Datasheet Scan PDF
BUZ84A Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
BUZ84A Others Shortform Datasheet & Cross References Data Scan PDF
BUZ84A Others Semiconductor Master Cross Reference Guide Scan PDF
BUZ84A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUZ84A Others FET Data Book Scan PDF
BUZ84A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

BUZ84 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BUZ84

Abstract: No abstract text available
Text: envelopes. 382 UNIT V A W « PowerMOS transistor BUZ84 ' N AMER PHILIPS/DISCRETE â , PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ84 ObE D ■bb53131 DQmblfl S ■^ REVERSE , 1,45 _ UNIT A A V ns M C 384 e PowerMOS transistor BUZ84 N AMER PHILIPS , ' D = 0,01; Tmf, = 25 °C. 385 PowerMOS transistor N AUER PHILIPS/DISCRETE BUZ84 ObE D â , BUZ84 ObE D ■bl.S3131 0014701 1 T-39-13 387 PowerMOS transistor


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PDF bb53T31 BUZ84 T-39-13 S3131 BXXZ84_ D0147Q2 BUZ84
BUZ84

Abstract: BUZ84A MTM5N90 Z84A
Text: TECHNICAL DATA SEMICONDUCTOR BUZ84 BUZ84A TMOS POWER MOSFETs 5.3 and 6 AMPERES rDS(on) = 1-5 , Range T ç = 25°C T c = 100°C Symbol V DSS vdgr BUZ84 800 800 ± 20 5.3 3.3 21 125 BUZ84A , MTM6N85 are applicable for this device. MOTOROLA TMOS POWER MOSFET DATA BUZ84 , BUZ84A ELECTRICAL , Turn-O ff D elay Tim e Fall Tim e (V DS - 30 V. ID = 2.5 Ade BUZ84 IO = 2.6 Ade BU Z84A Z0 - 50 fi, V G S , DIODE CHARACTERISTICS Diode Forw ard Voltage (V q s = 0) (Is = 10.6 A BUZ84 ) (IS = 12 A BU Z84A ) Co


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PDF BUZ84 BUZ84A BUZ84A MTM5N90 Z84A
BUZ84

Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
Text: AMER PHILIPS/DISCRETE ObE D ■^53131 DGlMblt 1 ■PowerMOS transistor BUZ84 July 1987 GENERAL , €ž BUZ84 N AUER PHILIPS/DISCRETE DbE D ■btiS3T31 GGmbT? 3 ^——T-39-13 RATINGS Limiting values in , pad - 5,0 12,5 - nH nH 383 PowerMOS transistor ,„ BUZ84 N ANER PHILIPS/DISCRETE OLE D ■bLS3T31 , 384 PowerMOS transistor ,„ N AMER PHILIPS/DISCRETE BUZ84 □ LE D ^53^31 □014l3cH 7 T-39-13 140 W , test; VqS Tmb ~ 25 °C. f(VGS) = 25 V, 385 PowerMOS transistor ,„ BUZ84 N AMER PHILIPS


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PDF BUZ84 ttS3131 T-39-13 Q0147QE t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
BUZ84

Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
Text: N AMER PHILIPS/DISCRETE ObE D ■^53131 DGlMblt 1 ■PowerMOS transistor BUZ84 July 1987 , BUZ84 N AUER PHILIPS/DISCRETE DLE D ■bfci53T31 GGmbT? 3 ■^^^^^^^^^^^^^^^^^^^^^^^^^^ T- 39-13 , Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ84 N AMER PHILIPS/DISCRETE OLE D â , 384 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ84 N AMER , PowerMOS transistor BUZ84 N AMER PHILIPS/DISCRETE ObE D ■bbSBTBl 0014700 T T-39-13 * -h Fig. 6


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PDF BUZ84 Q0147QE T-39-13 BIXZ84 BUZ84 t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
2001 - Not Available

Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3) TYPE: BUZ84 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage Power , Vdc Vdc pF pF pF 4.0 100 0.25 1.0 Page 1 of 2 TYPE: BUZ84 Drain Source Diode Characteristics


Original
PDF O-204AA BUZ84
MTM2P45

Abstract: MTM15N50 mtm2n45 MTM2P50 MTM6N90 MTM2N85 MTP3N80 MTM1N100 MTM2N90 MTM6N60
Text: MTM6N85 6 150 800 7 1.5 MTP3N80 3 75 2 3 BUZ84 5.3 125 750 7 1.5 MTM3N75 3 75 600 6 1 MTM2N60 2


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PDF O-204 MTM1N100 MTM3N100 MTM5N100 MTM1N95 MTM3N95 MTM5N95 MTM2N90 MTM4N90 MTM6N90 MTM2P45 MTM15N50 mtm2n45 MTM2P50 MTM2N85 MTP3N80 MTM6N60
2010 - 2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
Text: 2SK355 Part No. Alternate Device 2SK355 (Conl'd) IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132 VN1210N1 2SK399 IRFP142 2SK400 IRFP242 2SK401 BUZ84 IRF353 2SK402 IRFP342 2SK403 IRFP443 2SK405 IRFP242 2SK408 IRF612 2SK40~ REPLACEMENTI ALTERNATE SOURCE Mfr , GnrlElec/GE GnrlElec/GE GnrlElec/GE GnrlElec/GE GEllntersil Sillconix IRF612 2SK411 BUZ84A IRF420 2SK412


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PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
2001 - BUZ84A

Abstract: TO-204AA
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3) TYPE: BUZ84 A HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage Power , Vdc pF pF pF 4.0 100 0.25 1.0 Page 1 of 2 TYPE: BUZ84A Drain Source Diode Characteristics


Original
PDF O-204AA BUZ84 BUZ84A TO-204AA
P-Channel Power MOSFETS mtm2p50

Abstract: MTM2P50 MTP3N80 MTM2N45 MTM6N90 MTM4N50 MTM2N85 MTP2P45 MTM7N50 MTM1N100
Text: MTP3N80 3 75 2 3 BUZ84 5.3 125 750 7 1.5 MTM3N75 3 75 600 6 1 MTM2N60 2 2.5 1.5 MTM3N60 3 1.2 3


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PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 P-Channel Power MOSFETS mtm2p50 MTP3N80 MTM2N45 MTM6N90 MTM4N50 MTM2N85 MTP2P45 MTM7N50 MTM1N100
MTP3N80

Abstract: MTP1N60 MTM2N45 MTM1N100 mtp2n50 MTP2P45 MTM7N50 mtm2n50 MTM6N60 MTP6N60
Text: 150 850 8 1 MTM2N85 2 75 5 2 MTM4N85 4 125 3 3 MTM6N85 6 150 800 7 1.5 MTP3N80 3 75 2 3 BUZ84


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PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtp2n50 MTP2P45 MTM7N50 mtm2n50 MTM6N60 MTP6N60
BUZ10A

Abstract: IEF520 BUZ63 T0220H BUZ11A BUZ23 BUP69 BUP68 BUP67 BUZ11
Text: BUZ76 N-CH T0220 400 1. 8 3.0 40 BUZ76 N-CH T0220 400 2. ,5 2.6 40 BUZ84 N-CH BUZ900 N-CH


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PDF D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 BUZ63 T0220H BUZ11A BUZ23 BUZ11
Not Available

Abstract: No abstract text available
Text: , U na. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PowerMOS transistor GENERAL DESCRIPTION BUZ84 QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a metal envelope. This device is Intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. SYMBOL VDS ID Ptot RDS(ON


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PDF BUZ84
BUZ900D

Abstract: BUZ50ASM BUZ50B-220SM
Text: SEMELAB pic Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSS_on ID Pd June 1998 Ver. 1.1 Ciss_pf Qg_nC Td_on Tr Td_oft Tf BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P BUZ900X4S BUZ901 BUZ901D BUZ901DP BUZ901P BUZ901X4S BUZ902 BUZ902D BUZ902P BUZ903 BUZ903D BUZ903DP BUZ903DP


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PDF BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM
A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Text: A1019-A2 BUZ83 800 2.9 1.6 4 78 m A1012-A2 BUZ83A 3.4 1.6 3 78 m A1012-A3 BUZ84 5.3 1 2 125 □ A1013-A2 BUZ84A 6 1 1.5 125 A1013-A3 BUZ2201» 6.5 1 1.5 125 □ A1103-A2 BUZ 2211) 5.5 1 2 125 m


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PDF O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
2010 - SIEMENS 800

Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Text: BUZ356 BUZ84 2N6913 BUZ221 BUZ377 IRFAE40 IRFPE40 CHM75C-M155(A) CHM75C-M157(A) CHM75T-M155(A) CHM75T-M157 (A) BUZ355 BUZ355 BUZ355 BUZ84A 2N6913A 2N6913A 2N6913A IXTH6N80A (A) IXTM6N80A (A) IXTH6N80


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PDF O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
MFE9200

Abstract: BUZ84A IRF150 MOSFET AMP circuit BUZ90 equivalent MTP40N06M BUZ35S IRFZ22 mosfet MTP25N10E MTM12N10L 1RF620
Text: MTM4N85 4 125 3-422 3 3 MTM6N85 6 150 3-282 800 7 1.5 MTM3N80 3 75 3-417 2 3 BUZ84 5.3 125 3-83 1.5 BUZ84A 6 3-83 750 7 1.5 MTM3N75 3 75 3-417 600 2.8 3 2N6823 3-48 2.5 1.5 MTM3N60 3-412 1.8 6


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PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A IRF150 MOSFET AMP circuit BUZ90 equivalent MTP40N06M BUZ35S IRFZ22 mosfet MTP25N10E MTM12N10L 1RF620
1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent MFE9200 MTP40N06M buz90 equivalent MTH7N50
Text: MTM6N85 6 150 3-282 800 7 1.5 MTM3N80 3 75 3-417 2 3 BUZ84 5.3 125 3-83 1.5 8U284A 6 3-83 750 7


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PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent MFE9200 MTP40N06M buz90 equivalent MTH7N50
BUZ901P

Abstract: BUZ900P BUZ900 d44c3 buz90a BUZ77 buz94 DTS410 BUZ345 DTS107
Text: Switching ID: 2.3 Case Style: TO-204AA/TO-3 Polarity: Industry Type: BUZ83A STI Type: BUZ84A Notes , : BUZ84A STI Type: 2N5867 Notes: Polarity: PNP Power Dissipation: 87 Tj: VCEV: VCEO: 60 hFE min: 20 , Type: BUZ84 Notes: Breakdown Voltage: 800 Continuous Current: 5.3 RDS(on) Ohm: 2.0 Trans , -3 Polarity: Industry Type: BUZ84 STI Type: BUZ90 Notes: Breakdown Voltage: 600 Continuous Current: 4.5


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PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 d44c3 buz90a BUZ77 buz94 DTS410 BUZ345 DTS107
FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: BUZ74A BUZ76 BUZ76A BUZ78 BUZ80 BUZ80A BUZ83 BUZ83A BUZ84 BUZ84A book S9 S9 S9 S9 S9 S9 S9 S9 S9 S9 S9 S9


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PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: No file text available


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PDF
IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 smps cook circuit MTM5N90 designers datasheet irf8408 2N6823 TP8N10 What is comparable with IRF 3205 siemens semiconductor manual
Text: 2 3 5.3 125 3-83 75 3-417 BUZ84 B U Z84A 750 7 600 2.8 3 2.5


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PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 smps cook circuit MTM5N90 designers datasheet irf8408 2N6823 TP8N10 What is comparable with IRF 3205 siemens semiconductor manual
cm .02m z5u 1kv

Abstract: BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
Text: No file text available


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PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 cm .02m z5u 1kv BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
triac zd 607

Abstract: 1n5204 CA2820 TRW H11C6 equivalent BF845 bf506 BD529 BD243 PINOUT TRW sd41 2N6823
Text: 3 3 MTM6N85 6 150 7 1.5 MTM3N80 3 75 2 3 BUZ84 5.3 125 BUZ84A 6 1.5 MTM3N75 3 75 6 150 0.4 MTM8P1CI 75 0.3 6 MTM12P10


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PDF SG73/D triac zd 607 1n5204 CA2820 TRW H11C6 equivalent BF845 bf506 BD529 BD243 PINOUT TRW sd41 2N6823
transistor f6 13003

Abstract: equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
Text: No file text available


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PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
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