| BUZ31L |
|
Infineon Technologies
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 13.5A TO220AB |
|
Original |
PDF
|
| BUZ31 L |
|
Infineon Technologies
|
N-Channel enh. 200V...240V MOSFETs |
|
Original |
PDF
|
| BUZ31L |
|
Infineon Technologies
|
SIPMOS Power Transistor |
|
Original |
PDF
|
| BUZ31L |
|
Siemens
|
|
|
Original |
PDF
|
| BUZ31L |
|
Siemens
|
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) |
|
Original |
PDF
|
| BUZ31L |
|
Toshiba
|
Power MOSFETs Cross Reference Guide |
|
Original |
PDF
|
| BUZ31L |
|
Siemens
|
SIPMOS Power Transistors |
|
Scan |
PDF
|
| BUZ31LE3044A |
|
Infineon Technologies
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 13.5A TO-220 |
|
Original |
PDF
|
| BUZ31L E3044A |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 13.5A TO-220 |
|
Original |
PDF
|
| BUZ31LH |
|
Infineon Technologies
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 13.5A TO220-3 |
|
Original |
PDF
|
| BUZ31L H |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 13.5A TO220-3 |
|
Original |
PDF
|
| BUZ31LH |
|
Infineon Technologies
|
N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 200.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (@4.5V): 200.0 mOhm; ID (max): 13.5 A; |
|
Original |
PDF
|
