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Part Manufacturer Description Datasheet Download Buy Part
BUZ30AHXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
BUZ30A H Infineon Technologies AG SIPMOS® N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 200.0 V; RDS (on) (max) (@10V): 130.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 21.0 A;
BUZ30AH3045AATMA1 Infineon Technologies AG Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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BUZ30A-E3045A Siemens America II Electronics 2,800 - -

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