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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BUZ111S Infineon Technologies AG Rochester Electronics 3,249 $1.07 $0.87
BUZ111S Infineon Technologies AG Bristol Electronics 8,800 - -
BUZ111S Infineon Technologies AG ComS.I.T. 4 - -
BUZ111S Infineon Technologies AG Chip One Exchange 358 - -
BUZ111SE3045 Infineon Technologies AG ComS.I.T. 2,000 - -
BUZ111SE3045A Siemens ComS.I.T. 215 - -
BUZ111SL-E3045A Infineon Technologies AG Rochester Electronics 2,000 $1.07 $0.87
BUZ111SLE3045A Siemens Rochester Electronics 2,000 $1.07 $0.87

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BUZ111S datasheet (17)

Part Manufacturer Description Type PDF
BUZ111S Infineon Technologies SIPMOS Power Transistor Original PDF
BUZ111S Siemens Original PDF
BUZ111S Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) Original PDF
BUZ111S Toshiba Power MOSFETs Cross Reference Guide Original PDF
BUZ111SE3045 Infineon Technologies SIPMOS Power Transistor Original PDF
BUZ111S-E3045 Infineon Technologies SIPMOS Power Transistor Original PDF
BUZ111SE3045A Infineon Technologies Sipmos Power Transistor Original PDF
BUZ111SE3046 Infineon Technologies N-Channel SIPMOS Power Transistor Original PDF
BUZ111SL Infineon Technologies SIPMOS Power Transistor Original PDF
BUZ111SL Siemens Original PDF
BUZ111SL Siemens SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Original PDF
BUZ111SL Toshiba Power MOSFETs Cross Reference Guide Original PDF
BUZ111SL-E3045 Infineon Technologies SIPMOS Power Transistor Original PDF
BUZ111SLE3045 Infineon Technologies SIPMOS Power Transistor Scan PDF
BUZ111SLE3045A Infineon Technologies N-Channel SIPMOS Power Transistor Original PDF
BUZ111SL-E3045A Infineon Technologies SIPMOS Power Transistor Original PDF
BUZ111SLE3045A Infineon Technologies SIPMOS Power Transistor Scan PDF

BUZ111S Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - BUZ111S

Abstract: Q67040-S4003-A2 SPP80N05
Text: BUZ111S SPP80N05 SIPMOS ® Power Transistor · N channel · Enhancement mode · , Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111S 55 V 80 A , 20 P tot TC = 25 °C Semiconductor Group V W 250 1 28/Jan/1998 BUZ111S , /1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified , BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter


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PDF BUZ111S SPP80N05 O-220 Q67040-S4003-A2 28/Jan/1998 BUZ111S Q67040-S4003-A2 SPP80N05
1997 - BUZ111S

Abstract: Q67040-S4003-A2 SPP80N05
Text: BUZ111S Preliminary data SPP80N05 SIPMOS ® Power Transistor · N channel · Enhancement mode , S Type VDS ID RDS(on) Package Ordering Code BUZ111S 55 V 80 A 0.008 , TC = 25 °C Semiconductor Group V W 250 1 04/Nov/1997 BUZ111S Preliminary data , , ID = 80 A Semiconductor Group nA - 2 0.0065 0.008 04/Nov/1997 BUZ111S , charge total nC V - 3 5.45 04/Nov/1997 BUZ111S Preliminary data SPP80N05


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PDF BUZ111S SPP80N05 O-220 Q67040-S4003-A2 04/Nov/1997 BUZ111S Q67040-S4003-A2 SPP80N05
SPP80N05

Abstract: BUZ111S Q67040-S4003-A2
Text: BUZ111S SPP80N05 SIPMOS ® Power Transistor · N channel · Enhancement mode · , Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111S 55 V 80 A , 20 P tot TC = 25 °C Semiconductor Group V W 250 1 28/Jan/1998 BUZ111S , /1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified , BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter


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PDF BUZ111S SPP80N05 O-220 Q67040-S4003-A2 28/Jan/1998 SPP80N05 BUZ111S Q67040-S4003-A2
1999 - buz111S

Abstract: E3045 Q67040-S4003-A2 BUZ 32 SMD Q67040-S4003-A6
Text: temperature Type Package Ordering Code Packaging BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A Pin 2 Pin 3 P-TO263-3-2 Q67040-S4003-A6 Tape and Reel BUZ111S E3045 Pin 1 , = f (TC) ID = f (TC ) parameter: VGS 10 V BUZ111S BUZ111S 90 320 A W 70 , : D = 0 , T C = 25 °C parameter : D = tp /T 10 3 BUZ111S 10 1 BUZ111S K/W tp = , (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ111S 190 BUZ111S


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PDF BUZ111S P-TO220-3-1 Q67040-S4003-A2 BUZ111S E3045A P-TO263-3-2 Q67040-S4003-A6 E3045 E3045 BUZ 32 SMD
diode smd marking BUZ

Abstract: TRANSISTOR 023 3010 diode smd m7 G1337 Q67040-S4003-A2 smd diode m7 smd marking ACH smd code book TRANSISTOR AO SMD MARKING E3045
Text: BUZ111S P-T0220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A P-T0263-3-2 Q67040-S4003-A6 Tape and Reel BUZ111S , ^DS Drain current b = /(7c) parameter: Ifes ^ 10 V BUZ111S 90 a \ 0 20 40 60 80 100 120 140 16c 'c , / / / / / / / / Typ. gate charge VGS=f (Osate) parameter: Iq pu|s = 80 A BUZ111S 16 v w 10


OCR Scan
PDF BUZ111S P-T0220-3-1 Q67040-S4003-A2 E3045A P-T0263-3-2 Q67040-S4003-A6 E3045 diode smd marking BUZ TRANSISTOR 023 3010 diode smd m7 G1337 smd diode m7 smd marking ACH smd code book TRANSISTOR AO SMD MARKING
1998 - IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 philips 435-2 BUZ110S IRF3205 TO-220 harris 4365 motorola 4360
Text: 55V UltraFET MOSFETs Competitive Cross Reference PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRF1010NS IRF3205 IRF3205L IRF3205S IRFZ24A IRFZ24N IRFZ34N IRFZ34NS IRFZ44A IRFZ44N IRFZ44NS IRFZ48N IRFZ48NS MTB52N06V TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-263 TO-220 TO-262 TO-263 TO


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PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 philips 435-2 IRF3205 TO-220 harris 4365 motorola 4360
CURRENT LIMITING LOW SIDE DRIVER

Abstract: TLE6280GP electric assisted power steering system motor GH mosfet BUZ111S MOSFETs Application Hints
Text: of a BUZ111S and its output characteristic in figure 6. A maximum current of 100A is assumed. This , 11 HL PS TM 2 - 6/99 Figure 6: Output characteristic of the BUZ111S Draft 2.5 The dI/dt


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PDF 3x100 TLE6280G TLE6280GP CURRENT LIMITING LOW SIDE DRIVER electric assisted power steering system motor GH mosfet BUZ111S MOSFETs Application Hints
IRF9634

Abstract: MJE13001 KT538A KT8296 KT829 KT940A kt8290 MJE-13001 KT8270A KT827
Text: BUZ91A 600 0.9 8.0 ±20 150 2.0.4.0 TO-220 BUZ111S 320 0.008 80.0


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PDF KT6136A KT6137A KT660A KT660 KT814A KT814 KT814B KT815A KT815 IRF9634 MJE13001 KT538A KT8296 KT829 KT940A kt8290 MJE-13001 KT8270A KT827
fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
Text: BUZ103SL BUZ104 BUZ104S BUZ104SL BUZ11 BUZ110S BUZ110SL BUZ111S BUZ11A BUZ20 BUZ22 BUZ305


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
wiring diagram for float switch for pumps

Abstract: 80N04 BUZ111S C164 TLE6280GP electric cooling water pump engine car parking aid circuit automotive TLE 6280 GP
Text: of this value is shown by example of a BUZ111S and its output characteristic in fig. 11. A maximum , .11: Output characteristic of the BUZ111S Application Note page 12 of 20 V2.1 Draft, 2002-7


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PDF TLE6280GP wiring diagram for float switch for pumps 80N04 BUZ111S C164 electric cooling water pump engine car parking aid circuit automotive TLE 6280 GP
2003 - buz111s motor 24v

Abstract: flow switch water pump circuit diagram for 3 phase BUZ111S C164 TLE6280GP Infineon automotive semiconductor process technology Electrohydraulic Power Steering temperature dependent speed regulator for fans abstract parking aid circuit automotive
Text: of this value is shown by example of a BUZ111S and its output characteristic in fig. 11. A maximum , .11: Output characteristic of the BUZ111S Application Note page 12 of 20 V2.1 Draft, 2002-7


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PDF TLE6280GP buz111s motor 24v flow switch water pump circuit diagram for 3 phase BUZ111S C164 Infineon automotive semiconductor process technology Electrohydraulic Power Steering temperature dependent speed regulator for fans abstract parking aid circuit automotive
TLE5205 cross

Abstract: tle6205 c167 ecu ECU PWM Throttle Position Sensor TLE6209 Electronic accelerator pedal automotive ecu circuit TLE5206 Different types of PWM ICs
Text: =10A I=12A Rthja=30K/W BUZ101S(L), SPD21N05L BUZ102S(L), BUZ111S (L) Rthja=10K/W BUZ104S(L


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PDF C16x-families. TLE5205 cross tle6205 c167 ecu ECU PWM Throttle Position Sensor TLE6209 Electronic accelerator pedal automotive ecu circuit TLE5206 Different types of PWM ICs
1999 - SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: BUZ102AL BUZ102SL BUZ103 BUZ103S BUZ103SL BUZ104 BUZ104S BUZ104SL BUZ11 BUZ110S BUZ110SL BUZ111S


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PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: BUZ103SL BUZ104 BUZ104S BUZ104SL BUZ11 BUZ110S BUZ110SL BUZ111S BUZ11A BUZ20 BUZ22 BUZ305


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
2N5101

Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUX23 BUT51P BUT13P BUY22
Text: No file text available


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PDF 2N5050 O-213AA/TO-66 2N5052 2N5055 O-206AA/TO-18: 2N5056 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUX23 BUT51P BUT13P BUY22
1999 - IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: BUZ104 BUZ111S BUZ111SL BUZ110S BUZ100S BUZ110SL BUZ100SL BUZ102S BUZ102SL BUZ103S BUZ103SL


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PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: BUZ103SL BUZ104 BUZ104L BUZ104S BUZ104SL BUZ10L BUZ10S2 BUZ11 BUZ110S BUZ110SL BUZ111S BUZ111SL


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
FDS 4800

Abstract: smd transistor 9f8 smd marking 9T smd transistor H7 smd diode code 9T TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111SL D133457 BUZ111
Text: ­ Continuous drain current BUZ111SL P-T0220-3-1 Q67040-S4002-A2 Tube BUZ111SL E3045A P-T0263-3-2 Q67040-S4002-A6 Tape and Reel BUZ111SL E3045 P-T0263 , 25 °C ¡M / -DC 10' V 10 ' - Vos Drain current b = HTc) parameter: Vqs - 10 V BUZ111SL 90 , A, VDD = 25 V Drain-source breakdown voltage ^(BR)DSS =' (7j) BUZ111SL


OCR Scan
PDF 111SL BUZ111SL P-T0220-3-1 Q67040-S4002-A2 E3045A P-T0263-3-2 Q67040-S4002-A6 E3045 FDS 4800 smd transistor 9f8 smd marking 9T smd transistor H7 smd diode code 9T TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B D133457 BUZ111
1997 - BUZ111SL

Abstract: SPP80N05L Q67040-S4003-A2
Text: BUZ111SL Preliminary data SPP80N05L SIPMOS ® Power Transistor · N channel · Enhancement , G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V , 14 Ptot TC = 25 °C Semiconductor Group V W 250 1 04/Nov/1997 BUZ111SL , BUZ111SL Preliminary data SPP80N05L Electrical Characteristics, at Tj = 25°C, unless otherwise , = 80 A, VGS = 5 V Gate charge total nC V - 3 3.4 04/Nov/1997 BUZ111SL


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PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 04/Nov/1997 BUZ111SL SPP80N05L Q67040-S4003-A2
SPP80N05L

Abstract: BUZ111SL Q67040-S4003-A2
Text: BUZ111SL SPP80N05L SIPMOS ® Power Transistor · N channel · Enhancement mode · Logic Level , Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL , BUZ111SL SPP80N05L Maximum Ratings Parameter Symbol Values Operating temperature Tj -55 , 0.0055 0.007 Semiconductor Group 2 28/Jan/1998 BUZ111SL SPP80N05L Electrical , to 5 V Gate charge total nC Qg(th) - 3 3.4 - 28/Jan/1998 BUZ111SL


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PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 SPP80N05L BUZ111SL Q67040-S4003-A2
1998 - BUZ111SL

Abstract: Q67040-S4003-A2 SPP80N05
Text: BUZ111SL SPP80N05L SIPMOS ® Power Transistor · N channel · Enhancement mode · Logic Level , Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL , BUZ111SL SPP80N05L Maximum Ratings Parameter Symbol Operating temperature Tj -55 . + 175 , 0.007 Semiconductor Group 2 28/Jan/1998 BUZ111SL SPP80N05L Electrical Characteristics , total nC Qg(th) - 3 3.4 - 28/Jan/1998 BUZ111SL SPP80N05L Electrical


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PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 BUZ111SL Q67040-S4003-A2 SPP80N05
1999 - 111SL

Abstract: BUZ111SL smd JH transistor BUZ111SL Application Notes E3045 BUZ111SLE3045A
Text: 175°C operating temperature Type Package Ordering Code Packaging BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube BUZ111SL E3045A Pin 2 Pin 3 P-TO263-3-2 Q67040-S4002-A6 Tape and Reel BUZ111SL , (TC ) parameter: VGS 10 V BUZ111SL BUZ111SL 320 90 W A 70 60 200 ID , 25 °C parameter : D = tp /T 10 3 BUZ111SL 10 1 BUZ111SL K/W tp = 29.0µs 10 0 , ) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ111SL BUZ111SL Ptot = 300W A


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PDF 111SL BUZ111SL P-TO220-3-1 Q67040-S4002-A2 BUZ111SL E3045A P-TO263-3-2 Q67040-S4002-A6 E3045 111SL smd JH transistor BUZ111SL Application Notes E3045 BUZ111SLE3045A
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