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Rochester Electronics LLC
BUZ111S N-CHANNEL POWER MOSFET
BUZ111S ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key BUZ111S Bulk 2,867 382 - - - $0.79 $0.79 More Info
Rochester Electronics LLC
BUZ111SLE3045A MOSFET N-CH 50V 80A TO263
BUZ111SLE3045A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key BUZ111SLE3045A Bulk 2,000 385 - - - $0.78 $0.78 More Info
Rochester Electronics LLC
BUZ111SL-E3045A N-CHANNEL POWER MOSFET
BUZ111SL-E3045A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key BUZ111SL-E3045A Bulk 1,830 382 - - - $0.79 $0.79 More Info
Rochester Electronics LLC
BUZ11S2537 N CHANNEL ENHANCEMENT-MODE TRANS
BUZ11S2537 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key BUZ11S2537 Bulk 800 800 - - - $0.46 $0.46 More Info
onsemi
BUZ11_R4941 MOSFET N-CH 50V 30A TO220-3
BUZ11_R4941 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key BUZ11_R4941 Tube 0 800 - - - $0.50945 $0.50945 More Info
Show More
onsemi
BUZ11-NR4941 MOSFET N-CH 50V 30A TO220-3
BUZ11-NR4941 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key BUZ11-NR4941 Tube 0 1 $1.32 $1.177 $0.9177 $0.59848 $0.5107 More Info
Newark (2) BUZ11-NR4941 Bulk 1 1 $1.36 $1.22 $0.952 $0.628 $0.526 More Info
BUZ11-NR4941 Bulk 450 1 $1.36 $1.22 $0.952 $0.628 $0.526 More Info
RS BUZ11-NR4941 Package 445 5 - $1.025 $0.979 $0.712 $0.712 More Info
Schukat electronic BUZ11-NR4941 7,600 10 - €0.57 €0.47 €0.4 €0.4 More Info
element14 Asia-Pacific BUZ11-NR4941 Each 7,324 1 $2.27 $2.03 $1.59 $1.03 $0.879 More Info
More Distributors
Farnell BUZ11-NR4941 Each 0 51 Weeks, 1 Days 1 £1.32 £1.18 £0.922 £0.761 £0.761 More Info
New Advantage Corporation BUZ11-NR4941 11,200 1 - - - $0.725 $0.725 More Info
Infineon Technologies AG
BUZ111S Trans MOSFET N-CH 55V 80A 3-Pin(3+tab) TO-220 Tube - Bulk (Alt: BUZ111S)
BUZ111S ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas BUZ111S Bulk 0 4 Weeks 424 $0.78765 $0.78765 $0.7611 $0.7375 $0.7375 More Info
Bristol Electronics BUZ111S 8,730 - - - - - More Info
Rochester Electronics BUZ111S 2,867 $0.7942 $0.7942 $0.7624 $0.7307 $0.7307 More Info
Harris Semiconductor
BUZ11S2537 - Bulk (Alt: BUZ11S2537)
BUZ11S2537 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas BUZ11S2537 Bulk 0 4 Weeks 729 - - - $0.49421 $0.47362 More Info
Rochester Electronics BUZ11S2537 800 $0.462 $0.462 $0.4435 $0.425 $0.425 More Info
onsemi
BUZ11_NR4941 Trans MOSFET N-CH 50V 30A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: BUZ11-NR4941)
BUZ11_NR4941 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas (3) BUZ11_NR4941 Tube 0 30 Weeks 1,600 - - - - $0.45167 More Info
BUZ11_NR4941 Bulk 0 56 Weeks, 4 Days 1 $1.35 $1.2 $0.863 $0.579 $0.545 More Info
BUZ11_NR4941 Bulk 0 31 Weeks, 3 Days 1 $1.35 $1.2 $0.863 $0.579 $0.545 More Info
Newark BUZ11_NR4941 Bulk 0 800 - - - $0.621 $0.583 More Info
Avnet Asia BUZ11_NR4941 0 30 Weeks 1,600 - - - - $0.4143 More Info
Avnet Europe (2) BUZ11_NR4941 20 30 Weeks, 2 Days 50 - - - - - More Info
BUZ11_NR4941 0 30 Weeks, 2 Days 50 - - - - - More Info
Infineon Technologies AG
BUZ111SLE3045A - Bulk (Alt: BUZ111SLE3045A)
BUZ111SLE3045A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas BUZ111SLE3045A Bulk 0 4 Weeks 428 $0.78098 $0.78098 $0.75465 $0.73125 $0.73125 More Info
Infineon Technologies AG
BUZ111SL-E3045A Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: BUZ111SL-E3045A)
BUZ111SL-E3045A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas BUZ111SL-E3045A Reel 0 4 Weeks 424 $0.78765 $0.78765 $0.7611 $0.7375 $0.7375 More Info
Rochester Electronics BUZ111SL-E3045A 1,830 $0.7942 $0.7942 $0.7624 $0.7307 $0.7307 More Info
STMicroelectronics
BUZ11
BUZ11 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BUZ11 7 - - - - - More Info
Vishay Intertechnologies
BUZ11
BUZ11 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BUZ11 50 - - - - - More Info
Harris Semiconductor
BUZ11
BUZ11 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BUZ11 169 7 - $0.75 $0.4875 $0.2812 $0.2812 More Info
National Semiconductor Corporation
BUZ11
BUZ11 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BUZ11 10 7 - $0.75 $0.75 $0.75 $0.75 More Info
Vishay Intertechnologies
BUZ11S2
BUZ11S2 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BUZ11S2 14 - - - - - More Info
STMicroelectronics
BUZ11FI
BUZ11FI ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BUZ11FI 1,397 - - - - - More Info
Siemens
BUZ111SLE3045A BUZ111 - Power Field-Effect Transistor, 80A, 55V, 0.01ohm, N-Channel, MOSFET
BUZ111SLE3045A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BUZ111SLE3045A 2,000 $0.7875 $0.7875 $0.756 $0.7245 $0.7245 More Info
Siemens
BUZ11 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUZ11 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. USA BUZ11 8,682 - - - - - More Info
Fairchild Semiconductor Corporation
BUZ111
BUZ111 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. USA BUZ111 1,249 - - - - - More Info
Infineon Technologies AG
BUZ110SLE3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ110SLE3045A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. USA BUZ110SLE3045A 3,000 - - - - - More Info
Siemens
BUZ11A Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUZ11A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. USA BUZ11A 10 - - - - - More Info
Siemens
BUZ111SE3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111SE3045A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. USA BUZ111SE3045A 215 - - - - - More Info
Infineon Technologies AG
BUZ111SE3045 Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111SE3045 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. USA BUZ111SE3045 2,000 - - - - - More Info
onsemi
BUZ11"NR4941 N CHANNEL MOSFET, 50V, 30A, TO-220AB
BUZ11"NR4941 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
element14 Asia-Pacific BUZ11"NR4941 Each 6 1 $1.92 $1.58 $1.29 $0.935 $0.835 More Info
onsemi
BUZ11 MOSFET, N, TO-220
BUZ11 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Farnell BUZ11 Each 0 36 Weeks, 6 Days 1 £0.48 £0.48 £0.37 £0.31 £0.31 More Info
Fairchild Semiconductor Corporation
BUZ11 Transistor: N-MOSFET; unipolar; 50V; 30A; 0.03ohm; 75W; -55+150 deg.C; THT; TO220
BUZ11 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Maritex BUZ11 0 1 $0.549 $0.51 $0.411 $0.411 $0.411 More Info

BUZ11 datasheet (104)

Part ECAD Model Manufacturer Description Type PDF
BUZ11 BUZ11 ECAD Model Fairchild Semiconductor TRANS MOSFET N-CH 50V 30A 3TO-220AB Original PDF
BUZ11 BUZ11 ECAD Model Harris Semiconductor Power MOSFET Selection Guide Original PDF
BUZ11 BUZ11 ECAD Model Intersil 30A, 50V, 0.040 ?, N-Channel Power MOSFET Original PDF
BUZ11 BUZ11 ECAD Model Philips Semiconductors PowerMOS Transistor Original PDF
BUZ11 BUZ11 ECAD Model Siemens SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated) Original PDF
BUZ11 BUZ11 ECAD Model STMicroelectronics N-Channel 50V - 0.03Ohm - 33A TO-220 STripFET MOSFET Original PDF
BUZ11 BUZ11 ECAD Model STMicroelectronics N-Channel 50 V-0.03 ohm-33 A TO-220 STripFET MOSFET Original PDF
BUZ11 BUZ11 ECAD Model STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
BUZ11 BUZ11 ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
BUZ11 BUZ11 ECAD Model Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
BUZ11 BUZ11 ECAD Model International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
BUZ11 BUZ11 ECAD Model Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 50V, 30A, Pkg Style TO-220AB Scan PDF
BUZ11 BUZ11 ECAD Model Motorola Switchmode Datasheet Scan PDF
BUZ11 BUZ11 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
BUZ11 BUZ11 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
BUZ11 BUZ11 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
BUZ11 BUZ11 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BUZ11 BUZ11 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
BUZ11 BUZ11 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUZ11 BUZ11 ECAD Model Others FET Data Book Scan PDF

BUZ11 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
buz11

Abstract: buz11 motor control BUZ11 avalanche GC35620 airbag
Text: 7 SCS-THOMSON Ä 7# RKMilLifgTM «! rz BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS(on) Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A AVALANCHE , aram eter BUZ11 V ds V dgr V gs Id I dm P lo t T s tg Value BUZ11FI 50 50 ± 20 36 144 120 -65 to , 50 °C for TO-220 May 1992 1/5 BUZ11 /FI THERMAL DATA TO-220 Rthj-case Rthj-amb , 260 140 Unit ns ns ns ns 2/5 A 7f rZ Z SGS-THOMSON BUZ11 /FI ELECTRICAL


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PDF BUZ11 BUZ11FI O-220 ISOWATT220 CC35701 buz11 motor control BUZ11 avalanche GC35620 airbag
1999 - BUZ11

Abstract: buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220
Text: BUZ11 ® N - CHANNEL 50V - 0.03 - 33A TO-220 STripFETTM MOSFET T YPE BUZ 11 s s s s s , characterized in this datasheet. July 1999 1/8 BUZ11 THERMAL DATA R thj -case R thj -amb Thermal , 200 220 110 Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued , BUZ11 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11 Normalized Gate


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PDF BUZ11 O-220 175oC BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220
BUZ11 motorola

Abstract: BUZ11 buz11a
Text: 75 and 90 A · L ow D rive R eq u ire m e n t - VGS{th) = 4 V m ax · · · · BUZ11 BUZ11A TM O S , Symbol V d SS V d GR Vg S Id 'd m Pd TJ ' Tstg 30 120 75 0.6 - 5 5 to 150 BUZ11 50 50 ± 20 25 100 BUZ11A , Diode Forward Turn-On Time Reverse Recovery Time BUZ11 BUZ11A BUZ11 BUZ11A BUZ11 BUZ11A llg = Rated , M ax j Unit j VGSIth» r DS BÜZ11 BUZ11A VDS(on) BUZ11 BUZ11A 9FS 2.1 3 4 , MOSFET DATA 3 -68 BUZ11 , A BUZ11 BUZ11A V q $, DRAIN-TO-SOURCE VOLTAGE (VOLTS' Figure 1


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PDF BUZ11 BUZ11A BUZ11 motorola buz11a
Not Available

Abstract: No abstract text available
Text: ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS(on) < 0.04 , ) o c ( 1) o— S (3 ) ABSOLUTE MAXIMUM RATINGS Symbol P aram eter V alue BUZ11 V ds V dgr V gs Id I dm BUZ11FI D rain-source V oltage (V gs = 0) 50 V D rain , 175 °c E 55/150/56 1/8 BUZ11 /FI THERMAL DATA TO -220 Rthj-case Rthj-amb Therm al , gs 7 SGS-THOMSON ^ 7# RiiieR iiLii£iîR (iaies ® ® Min. BUZ11 /FI ELECTRICAL


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PDF BUZ11 BUZ11FI BUZ11/FI ISQWATT220
1996 - BUZ11

Abstract: BUZ11FI buz11 motor control C3621
Text: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s s s s ID 50 V 50 V BUZ11 BUZ11FI R DS( on) < 0.04 < 0.04 36 A 21 A TYPICAL , MAXIMUM RATINGS Symbol Parameter Value BUZ11 VD S V DG R V GS ID Drain-source Voltage (V GS = 0) Unit BUZ11FI 50 50 Gate-source Voltage o V ± 20 Drain- gate Voltage (R , ) November 1996 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ11 /FI THERMAL DATA


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PDF BUZ11 BUZ11FI 100oC 175oC O-220 ISOWATT220 BUZ11 BUZ11FI buz11 motor control C3621
Not Available

Abstract: No abstract text available
Text: instructions for TO220 envelopes. 74 UNIT V A W n PowerMOS transistor BUZ11_ , — ns — 0,25 _ mC PowerMOS transistor _ ._ _ BUZ11_ , transistor 8q._ _ BUZ11_ _ N. AMER PHILIPS/DISCRETE ObE , _ N AMER PHILIPS/DISCRETE QbE D 79 BUZ11_ _ ■bbS3T31 00143^3 S â , N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor ■bfc,S3^31 0014366 1 ■BUZ11


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PDF BUZ11 BUZ11_ 00143TE T-39-11 bbS3T31 I-39-11
1994 - buz11 equivalent

Abstract: BUZ11FI BUZ11 BUZ11 in electronic pulse schematic
Text: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI s s s , MAXIMUM RATINGS Symbol Parameter Value BUZ11 VD S V DG R V GS ID Drain-source Voltage (V GS = 0) Unit BUZ11FI 50 50 Gate-source Voltage o V ± 20 Drain- gate Voltage (R , ) May 1993 V -65 to 175 o C 175 o C E 55/150/56 1/8 BUZ11 /FI THERMAL DATA , Conditions V DD = 30 V R GS = 50 ID = 3 A V GS = 10 V Min. BUZ11 /FI ELECTRICAL CHARACTERISTICS


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PDF BUZ11 BUZ11FI 100oC 175oC O-220 ISOWATT220 buz11 equivalent BUZ11FI BUZ11 BUZ11 in electronic pulse schematic
1999 - BUZ11

Abstract: buz11 equivalent BUZ11 in electronic pulse schematic buz11 motor control
Text: BUZ11 ® N - CHANNEL 50V - 0.03 - 33A TO-220 STripFETTM MOSFET TYPE BUZ11 s s s s s , in this datasheet. July 1999 1/8 BUZ11 THERMAL DATA R thj-case R thj-amb Thermal , Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE , = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8 BUZ11 Output , Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11 Normalized Gate Threshold


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PDF BUZ11 O-220 175oC BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic buz11 motor control
1999 - BUZ11

Abstract: TB334
Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This , Ordering Information PART NUMBER BUZ11 PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ11 NOTE: When ordering, use the , BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ11 50 50 30 120 ±20 75


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PDF BUZ11 TA9771. BUZ11 TB334
TA9771

Abstract: buz11
Text: intelai I Data S heet Ju n e 1999 BUZ11 F ile N u m b e r 2253.2 30A, 50V, 0.040 Ohm , Information PART NUMBER BUZ11 PACKAGE TO-220AB BUZ11 BRAND · Related Literature - TB 334 "Guidelines for , rp o ra tio n 1999 N-CHANNEL STANDARD GATE BUZ11 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1 ) . , -8 in t e ik il BUZ11 Typical Performance Curves Unless Otherwise Specified Ta , CASE


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PDF BUZ11 TA9771. BUZ11 TA9771
1998 - TA9771

Abstract: BUZ11 TB334
Text: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 , gate power · rDS(ON) = 0.040 ( BUZ11 field effect transistor designed for applications such as · SOA , Boards" BUZ11 TO-220AB BUZ11 MOSNOTE: When ordering, use the entire part number. FET) Symbol , IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ11 TC = 25oC , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ11 50 50 30


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PDF BUZ11 BUZ11 TA9771. TA9771 TB334
BUZ11

Abstract: BUZ11FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
Text: SCS-THOMSON BUZ11 BUZ11 Fl N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss R DS(on) Id BUZ11 BUZ11FI 50 V 50 V < 0.04 Q. < 0.04 Q. 36 A 21 A . TYPICAL RDS(on) = 0.03 £2 . AVALANCHE RUGGED , ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ11 BUZ11FI Vos Drain-source Voltage (Vgs = 0 , EC Climatic Category (DIN I EC 68-1) 55/150/56 November 1996 1/8 BUZ11 /FI THERMAL DATA TO , 2/8 SGS-THOMSON BUZ11 /FI ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter


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PDF BUZ11 BUZ11FI O-220 ISOWATT220 BUZ11FI BUZ11/FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
TA9771

Abstract: No abstract text available
Text: BUZ11 Semiconductor Data Sheet June 1999 File Number 2253.2 30A, 50 V , 0.040 Ohm , Information PART NUM BER BUZ11 PACKAGE TO-22QAB BUZ11 BRAND · Related Literature - TB334 "Guidelines for , orporation 1999 BUZ11 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified BUZ11 UNITS , EST CO NDITIONS MIN TYP 1.7 200 0.25 M AX 30 120 2.6 UNITS A A V ns HC 4-6 BUZ11 Typical , F IG U R E S . O UTPUT CHARACTERISTICS 4-7 BUZ11 Typical Performance Curves < iz LU DC DC


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PDF BUZ11 TA9771. BUZ11 TA9771
buz11 application note

Abstract: Z11B BUZ11F
Text: ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI · · · · V DSS ^DS(on) ·d 50 V 50 V 0.04 , 1/5 167 BUZ11 - BUZ11FI THERMAL D A TA Rthj . case Thermal resistance junction-case R,hj , this datasheet 2/5 " 7/. 168 Æ 7 SGS-THOMSON MOEMIILSCTBBSIlie® BUZ11 - BUZ11FI ELECTRICAL , ransconductance 10 15 lp(A) SGS-THOMSON 3/5 169 BUZ11 - BUZ11FI Static drain-source on , diode forward characteristics 0*. OS 1? 16 V y jiV I 4/5 170 BUZ11 - BUZ11FI


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PDF BUZ11 BUZ11FI 500ms buz11 application note Z11B BUZ11F
1998 - BUZ11

Abstract: buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
Text: BUZ11 ® N - CHANNEL 50V - 0.03 - 30A -TO-220 STripFETTM POWER MOSFET T YPE s s s s s V DSS R DS(o n) ID 50 V BUZ11 < 0.04 30 A TYPICAL RDS(on) = 0.03 AVALANCHE , silicon characterized in this datasheet. August 1998 1/6 BUZ11 THERMAL DATA R t hj-ca se R t , D = 18 A V GS = 10 V Min. Typ . 40 200 220 110 Max. Un it ns ns ns ns BUZ11 , BUZ11 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3


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PDF BUZ11 -TO-220 175oC O-220 BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
Not Available

Abstract: No abstract text available
Text: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET™ POWER MOSFET TYPE BUZ11 V R , characterized in this datasheet. August 1998 1/6 BUZ11 THERMAL DATA Rth j-c a se T h e rm a l R , BUZ11 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Sym bol ISD ISDM VsD , 75 ns 0 .2 4 ne (*) Pulsed: Pulse duration = 3 0 0 jxs, duty cycle 1.5 % 3/6 BUZ11 , Circuit For Inductive Load Switching And Diode Recovery Times 4/6 BUZ11 T0-220 MECHANICAL DATA


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PDF BUZ11 -TO-220
TT220

Abstract: TT 220
Text: F Z J S G S -T H O M S O N BUZ11 M@MiLgCT»n©i_ BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V DSS ^D S(on) 30 A 20 A 50 V 50 V , in this datasheet June 1988 1/5 167 BUZ11 - BUZ11FI THERM AL D A T A Rth j. case Therm al , # u ifstfæ-iliLgicT^MO'ùâ- 168 BUZ11 - BUZ11FI ELECTRICAL CHA RA CTERISTICS (Continued) Param , ransconductance /= T SGS-THOMSON 3/5 169 BUZ11 - BUZ11FI Static drain-source on resistance M axim um


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PDF BUZ11 BUZ11FI 500ms TT220 TT 220
Not Available

Abstract: No abstract text available
Text: SGS-THOMSON oe y ® [ E J O T ( Q * S BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V dss R dS(oii) 0.04 Li 0.04 LI Id 50 V 50 V 36 A 20 A . . . , o l P ara m ete r BUZ11 Vos V dgr V gs Value BUZ11FI 50 50 ± 20 36 144 120 -65 to 1 75 175 20 , dm Pt oi Tstg Tj 55/150/56 '(#) Tc = 50 °cTtor TO -22C T May 1992 1/5 65 BUZ11 , BUZ11 /FI Derating Curve F orT O -220 Derating Curve For ISOW ATT220 O utput Characteristics


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PDF BUZ11 BUZ11FI O-220 ISOWATT22Û ISOWATT22Q ATT220 BUZ11/FI
2001 - BUZ11_NR4941

Abstract: No abstract text available
Text: Ordering Information PART NUMBER BUZ11_NR4941 PACKAGE TO-220AB • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND BUZ11 Symbol NOTE: When , BUZ11 Data Sheet September 2013 N-Channel Power MOSFET 50V, 30A, 40 mΩ 2253.2 , DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ11 UNITS 50 50 30 V V A Gate to


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PDF BUZ11 TA9771. BUZ11 BUZ11_NR4941
2001 - BUZ11

Abstract: buz11 application note BUZ1 TB334 TA9771
Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET [ /Title (BUZ1 1 , Information PART NUMBER BUZ11 PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ11 NOTE: When ordering, use the entire , ) ©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 Absolute Maximum Ratings TC = , ID BUZ11 50 50 30 UNITS V V A Pulsed Drain Current (Note 3) . . . . . . . . . . . . .


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PDF BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771
BUZ11

Abstract: BUZ11s2
Text: SILICÓNIX INC 1ÖE D Ö25M73S 0014505 = 1 XKS3& BUZ11 , BUZ11S2 T-3ft -1 1 N-Channel Enhancement Mode Transistors TQ-220AB TO P VIEW O PRODUCT SUMMARY PART NUMBER BUZ11 BUZ11S2 V , T-39-11 BUZ11 , BUZ11S2 PARAMETER STATIC Drain-Source Bfeakdown Voltage Gate Threshotd Voltage Gate-Body LeaKago Zero Gate Voltage Drain Current BUZ11 BUZ11S2 VpaiDss V qs(U i) ,g s s ÂlïSBte LIMITS , incorporated ii T -3 9 -1 1 BUZ11 , BUZ11S2 TYPICAL CHARACTERISTICS (25°C Unless Otherwise Specified


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PDF 25M73S BUZ11, BUZ11S2 TQ-220AB BUZ11 2S4735 BUZ11S2
Not Available

Abstract: No abstract text available
Text: C X 'S iS co n ix in c o r p o r a te d BUZ11 N-Channel Enhancement Mode Transistor TO- 22 OAB TOP VIEW O PRODUCT SUMMARY V (BR)DSS r DS(ON) d (V) 50 (il) 0.040 (A) 30 1 , transient thermal impedance data, Figure 11). BUZ11 ELECTRICAL CHARACTERISTICS (Tj = C3TS i liconix , BUZ11 Figure 2. Transfer Characteristics < fcc D < cc Q < cc Û o VDS - DRAIN-TO-SOURCE VOLTAGE , * r = 30 A 0 40 60 80 100 Qg - TOTAL GATE CHARGE (nC) 4-3 BUZ11 TYPICAL


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PDF BUZ11 10peration
BUZ11

Abstract: No abstract text available
Text: Tem ic Siliconix BUZ11 N-Channel Enhancement-Mode Transistor Product Summary V (BR)DSS (V) 50 r DS(on) ( & ) 0.0 4 0 I d (A) 30 T Q -2 2 0 A B o D R A IN c o n n ected to TAB G D S , 1.0 P-36683- Rev. C (05/30/94) 6 -1 Tem ic BUZ11 Specifications (Tj = 25°C Unless , . C (05/30/94) Tem ic BUZ11 , Total G a te C h arg e (nC ) 6-3 N-/P-Channel M usFETs Tem ic BUZ11 Typical Characteristics


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PDF BUZ11 F-36683-- P-36683-- BUZ11
2001 - Not Available

Abstract: No abstract text available
Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET [ /Title (BUZ1 1 , Information PART NUMBER BUZ11 PACKAGE TO-220AB • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND BUZ11 NOTE: When ordering, use the entire , ) ©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ11 50 50 30 UNITS V V A Gate to Source Voltage . . .


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PDF BUZ11 O220AB
BUZ11

Abstract: No abstract text available
Text: ^zmi-Conauctoi L/^ioaucti, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ11 N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET™ MOSFET TYPE BUZ11 VDSS RDS(on) ID 50 V < 0.04 ii 33 A TYPICAL Ros(on) = , verify that datasheets are current before placing orders. Quality Semi-Conductors BUZ11 THERMAL , 200 220 110 Max. Unit ns ns ns ns BUZ11 ELECTRICAL CHARACTERISTICS (continued


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PDF BUZ11 O-220 BUZ11
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