The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

BUZ MOSFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - BUZ MOSFET

Abstract: power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf IRF MOSFET driver TS-001-5 RFD15N05SM TO-252 MOSFET
Text: [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ TYPES BUZ XXX EQUIVALENT EUROPEAN PART NUMBER PART TYPE EITHER 2 OR 3 DIGITS HP, HRF , XX X XX XXX DEVICE TYPE RF: Standard MOSFET RL: Current Limited MOSFET PACKAGE , Logic Level MOSFET RFD15N05SM D-PAK,15A, N-Channel, 50V, Surface Mount Leadform MOSFET RFP12N06RLE TO-220, 12A N-Channel, 60V, Rugged, Logic Level, ESD Protected MOSFET NOTE: For RF1K, RF3S, RF3VXXXXX Series


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PDF O-263, O-252, OT-223 O-252 O-220 TS-001 O-220) O-247 BUZ MOSFET power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf IRF MOSFET driver TS-001-5 RFD15N05SM TO-252 MOSFET
1998 - BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 bup 313 BUP 304 SGU06N60 615n60 BUZ 840 BUP 307D
Text: 295 BSS 296 BSS 297 BSS 7728 BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B BUZ 41A BUZ 42 BUZ 50A BUZ 50B BUZ 50C BUZ 51 BUZ 60 BUZ 61 BUZ 61A BUZ 72 BUZ 72A BUZ 72AL BUZ 72L BUZ 73 BUZ 73A BUZ 73AL BUZ 73L BUZ 74 BUZ 74A BUZ 76 BUZ 76A BUZ 77A BUZ 77B BUZ 78 BUZ 80 BUZ 80A BUZ 81 BUZ 90 BUZ 90A BUZ 91A BUZ 92 BUZ 93 BUZ 100 BUZ 100L BUZ 100S BUZ 100SL VDS [V] R DSon [] -240 20.00 250 100.00 -50 10.00 50 0.30 100 0.80 200


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PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 bup 313 BUP 304 SGU06N60 615n60 BUZ 840 BUP 307D
1997 - of mosfet BUZ 384

Abstract: BUZ MOSFET thyristor capacitive discharge ignition transistor CF leistungstransistoren BUZ 338 tig welding siemens igbt GS Dioden SIEMENS MOSFET BUZ
Text: verknüpften Kapazitäten (Beispiel: BUZ 338 Parameter: VGS = 0 V, f = 1 MHz) Figure 11 Voltage Dependence of Associated Capacitances (example: BUZ 338; parameters: VGS = 0 V, f = 1 MHz) 2.1.2 , (Beispiel: BUZ 338, Parameter: 80-µs-Pulstest, VDS = 25 V, Tj = 25 °C und 150 °C) Figure 12 Typical Transfer Characteristic (example: BUZ 338, parameters: 80 µs pulse test, VDS = 25 V, Tj = 25 °C and 150 , 13 Typ. Ausgangscharakteristik (Beispiel: BUZ 338, Parameter: 80-µs-Pulstest, TC = 25 °C


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PDF MIL-STD-883, MIL-STD-883; of mosfet BUZ 384 BUZ MOSFET thyristor capacitive discharge ignition transistor CF leistungstransistoren BUZ 338 tig welding siemens igbt GS Dioden SIEMENS MOSFET BUZ
1996 - BUP314

Abstract: BUP307 igbt types BUZ MOSFET siemens bup314 BUZ334 BUP401 MOSFET welding INVERTER 334 mosfet flyback inverter welding
Text: numerous measurements on each test item are listed in Table 1. The MOSFET ( BUZ 334) and the IGBT (BUP , frequencies above 70 kHz does the currenthandling capacity of the BUP 401S drop to that of the BUZ 334 MOSFET , V 600 V 600 V 1200 V 1200 V 1200 V Type IGBT IGBT IGBT IGBT MOSFET , switching losses ETS = PS / (f · ICE) BUZ 334 BUP 401S ICE f TON/T TSINK PD RthJC 4.0 A , Comparison of test results of a MOSFET transistor and a high-speed IGBT output of the frequency inverter


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PDF O-220 O-218 BUP314 BUP307 igbt types BUZ MOSFET siemens bup314 BUZ334 BUP401 MOSFET welding INVERTER 334 mosfet flyback inverter welding
1997 - DC chopper

Abstract: BSP149 equivalent BUZ MOSFET n mosfet depletion pspice model parameters kp1022 depletion mode mosfet 100 MHz BSP149 SIPMOS SPICE NMOS depletion pspice model BSS SPICE
Text: used to simulate the DC and AC behaviour of all types in the BUZ , BSS, BTS and BSP series, in standard , following subcomponents: DC-relevant subcomponents: a) The inner MOSFET MBUZ describes the characteristic , represented as 'depletion mode MOSFET ' MVRD. The voltage dependence of the drain resistance is caused by , junction. This field effect narrows the current path between the source islands of the MOSFET when the , technological steps which reduce the starting voltage of the MOSFET and at the same time shift the capacitance


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of mosfet BUZ 384

Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
Text: Spannungsabhängigkeit der verknüpf ten Kapazitäten (Beispiel: BUZ 338 Parameter: FG S = 0 V , / = 1 MHz) 2.1.2 Kennlinienfeld Figure 11 Voltage Dependence of Associated Capacitances (example: BUZ 338; parameters: l''G S = , Technische Angaben Technical Information 13 BUZ SILOOOM 25" CI / / 15 0 "C 0 0 1 2 y 3 4 5 6 7 8 V -10 K;s Bild 12 Typische Übertragungscharakteristik (Beispiel: BUZ 338 , Typical Transfer Characteristic (example: BUZ 338, parameters: 80 us pulse test, FD S = 25 V, 7} = 25 °C


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PDF SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
siemens dioden

Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
Text: verknüpf ten Kapazitäten (Beispiel: BUZ 338 Parameter: VG S = 0 V ,/= 1 MHz) 2.1.2 Kennlinienfeld Liegt an , Voltage dependence of associated capacitances (example: BUZ 338; parameters: VG S = 0 V , / = 1 MHz) 2.1.2 , Angaben Technical Inform ation 7 BUZ 338 -1 r 25 C 11 r 15 0 C SIL00014 i I / 1 , 12 Typische Übertragungscharakteristik (Beispiel: BUZ 338, Parameter: 8 0 | i S Pulstest, Vos = 25 V , (example: BUZ 338, parameters: 80|is pulse test, V 'ds = 25 V, Tt = 25 °C and 150 °C) The transistor is


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PDF SIL00001 MILSTD-883, siemens dioden leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
1997 - P-Channel Depletion Mosfets

Abstract: MOSFET Application Hints BUZ MOSFET MOSFETs Application Hints Siemens BUZ 72A
Text: . Semiconductor Group 1 MOSFET Application Hints 2 Switching Behavior of a Power MOSFET under the , power MOSFET cell, together with the main equivalent circuit components. Figure 2 shows the circuit , switch-on process. Semiconductor Group 2 MOSFET Application Hints Figure 2 The Gate Charge , layer capacitance of the epitaxial layer, still has any effect. Semiconductor Group 3 MOSFET , FET. Semiconductor Group 4 MOSFET Application Hints 3 Taking Account of the Important


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BUZ45

Abstract: BUZ 840
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 45 BUZ 45 A BUZ 45 B VD S rn 500 V lD = 8 . 3 . . . 10 , )1) Type BUZ 45 BUZ 45 A BUZ 4 5 B Ordering code C 6 7078-A 1008-A 2 C 67078-A 1008-A 3 C 67078 , tem perature range Max. pow er dissipation, Tc = = A? = Symbol BUZ 45 Unit 45 A 500 500 ± 20 , category, DIN IEC 68-1 ') See c h a p te r P a ckage O utline s. - > o - 836 BUZ 45 BUZ 45 A BUZ 45 B Electrical Characteristics at Tj = 25 °C, unless otherw ise specified. Parameter


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PDF 078-A 008-A 7078-A BUZ45 BUZ 840
BUZ93

Abstract: S1343A BUZ92
Text: SIEMENS SIPMOS® Power Transistors N channel Enhancem ent mode Avalanche-rated BUZ 92 BUZ 93 Type BUZ 92 BUZ 93 ^DS ¡D R o S (on) Package 1> TO -220 AB TO -220 AB O rdering Code C , Operating and storage tem perature range A) pu ls BUZ 93 3.6 14.5 3.3 6 Unit 3.3 13 A /A R , ^ (B R ) DSS BUZ 92 BUZ 93 Values typ. max. Unit 600 2.1 - - V ^ G S (th , ate-source leakage current l/G S = 20 V, VD S= 0 V Drain-source on-resistance VG S = 10 V, / d = 2 .0 A BUZ


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PDF 67078-S1343-A2 C67078-S1346-A2 BUZ93 S1343A BUZ92
BUZ91

Abstract: buz 91 f BUZ91A buz 10 DIODE BUZ 1342-A3
Text: SIEMENS SIPMOS® Power Transistors · · · N channel Enhancem ent mode Avalanche-rated BUZ 91 BUZ 91 A Type BUZ 91 BUZ 91 A V Ds 600 V 600 V Id 8.5 A 8.0 A Tc 32 ' C 33 "C ^DS (on) 0.8 , dissipation, Tc = 25 °C Operating and storage tem perature range Ad puis ^AR ^AR ¿AS 8.5 34 8.0 13 570 mJ BUZ , /150/56 K/W - 1) See chapter Package Outlines. 464 SIEM ENS BUZ 91 BUZ 91 A , specified. Param eter Reverse diode Continuous reverse drain current Tc = 25 ' C BUZ 91 BUZ 91 A Pulsed


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PDF 67078-S 1342-A2 1342-A3 BUZ91 BUZ91 buz 91 f BUZ91A buz 10 DIODE BUZ 1342-A3
buz 350 equivalent

Abstract: VN0109n5 analog VN10KM equivalent sony 2sj54 VQ1004 equivalent vq1004 VN67ad analog VN0300M equivalent supertex VN10KE VN10lM equivalent
Text: ) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms). Equivalent (Volts) (Ohms) BUZ 14 50 0.04 TO-3 _ _ _ BUZ 15 50 0.03 TÖ-3 _ — _ BUZ 20 100 0.20 TO-220 VN1000D 100 0.18 BUZ 21 100 0.10 TO-220 IRF522 100 0.4 BUZ 23 100 0.20 TO-3 VN1000A 100 0.18 BUZ 24 100 0.06 TO-3 — — — BUZ 25 100 Q.10 TO-3 IRF540 100 0.085 BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 BUZ 33 200 0.75 TO-3 IRF232 200 0.6 BUZ 34 200 0.20 TO-3 IRF240 200 0.18 BUZ 40 500 4.5 TO


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent sony 2sj54 VQ1004 equivalent vq1004 VN67ad analog VN0300M equivalent supertex VN10KE VN10lM equivalent
8070N

Abstract: No abstract text available
Text: SIEMENS SIPMOS® Power Transistors · · · N channel Enhancement mode Avalanche-rated Type BUZ 16 BUZ 16 S2 Vos 50 V 60 V Io 48 A 48 A R D S (o n ) 0.018 Q ¡0 .0 1 8 Q M axim um Ratings , , DIN 40 040 IEC clim atic category, DIN IEC 68-1 1) See chapter Package Outlines. BUZ 16 B U , Drain-source breakdown voltage l'G S = 0 V, / D = 0.25 mA BUZ 16 BUZ16S2 Gate threshold voltage ^GS = ^DS BUZ 16 S = 60 V BUZ16S2 VG S = 0 V, VD 7, =


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PDF O-204 8070N
1998 - LCD 3924

Abstract: K2956 BUZ 41 A diagram KS57C2916 KS57P2916 SAM47 SEG40
Text: BUZ pin and BUZ pin · INSTRUCTION EXECUTION TIMES · ­ 40 °C to 85 °C OPERATING VOLTAGE , .2/CLO/ BUZ /K2 I/O PORT 0 P0.1/ TCLO0 TIMER COUNTER INTERNAL P0.3/ BUZ /K3 /K1 , .0/INT0 7 58 SEG18 P0.3/ BUZ /K3 8 57 SEG17 P0.2/CLO/ BUZ /K2 9 56 SEG16 , /K0 TCLO0/K1 BUZ /CLO/ K2 BUZ /K3 7 6 5 4 INT0 INT1 INT2 INT4 7, 6 P1.0, P1 , falling edges. 4 P1.3 BUZ I/O 2 kHz, 4 kHz, 8 kHz or 16 kHz frequency output for buzzer


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PDF KS57C2916/P2916 KS57C2916 SAM47 up-to-704-dot 80-pin KS57P2916. KS57P2916t LCD 3924 K2956 BUZ 41 A diagram KS57P2916 SAM47 SEG40
1997 - lcd clock

Abstract: 24 hour timer application 24 hour timer lcd alarm clock lcd clock module
Text: / BUZ ) [VOH] Lo level output voltage (CNT/SLP) [VOL] -0.5 SEC/ MTH V IOL = 5µA V IOL-250µA Lo level output voltage BUZ [VOL] -0.5 0 V Display mode selection ALM LO , count down. RES 2 To re-set tape counter and SLP timer. BUZ EN When pulled LO - CNT OUT pin is HI , CNT OUT and BUZ OUT deliver signal when alarm time is reached. CNT OUT I) HI for 5 minutes when , time is reached and with buzzer enable LO. BUZ OUT Deliver signal to sound alarm when alarm time is


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2009 - Not Available

Abstract: No abstract text available
Text: BUZ 31 H SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated , -2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 31 , / 56 Page 1 2009-11-09 BUZ 31 H Electrical Characteristics, at Tj = 25˚C, unless otherwise , 0.16 0.2 2009-11-09 BUZ 31 H Electrical Characteristics, at Tj = 25˚C, unless otherwise , Page 3 2009-11-09 BUZ 31 H Electrical Characteristics, at Tj = 25˚C, unless otherwise


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PDF IEC61249-2-21 PG-TO-220-3
2009 - BUZ32

Abstract: IEC61249-2-21
Text: BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free BUZ32 H3045A Rev. 2.2 PG-TO263-3 Yes 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ32 H3045A Rev. 2.2 9 2009-11-10


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PDF H3045A IEC61249-2-21 BUZ32 PG-TO263-3 IEC61249-2-21
BUZ90

Abstract: BUZ90S BUZ90A 40n120 C67078-S1321-A3
Text: SIEMiHS SIPMOS® Power MOS Transistors BUZ 90 BUZ 90 A = 600 V = 4 .5 /4 .0 A ' D S (o n , ) Type BUZ 90 BUZ 90 A Ordering code C67078-S1321-A2 C67078-S1321-A3 Maximum Ratings Parameter , ) S ee c h a p te r P ackage O utline s. Symbol ^DS ^GS Id puls ^A R ^AR Eas BUZ 90 600 ± 20 4.5 , 75 < 1.67 £ 75 E 55/150/56 W K/W 993 BUZ 90 BUZ 90 A Electrical Characteristics at T -, = 25 , S= 0 Drain-source on-resistance VG S = 10 V, / Q= 2.8 A BUZ 90 BUZ 9 0 A ^ (B R )D S S Unit max


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PDF -220A C67078-S1321-A2 C67078-S1321-A3 BUZ90 BUZ90S BUZ90A 40n120 C67078-S1321-A3
Not Available

Abstract: No abstract text available
Text: SIEMENS SIPMOS® Power Transistors BUZ 16 BUZ16S2 • N channel • Enhancement mode â , > BUZ 16 TO-204 AE C67078-S1020-A2 BUZ16S2 60 V 48 A 0.018 £ 2 TO-204 AE , •c K/W - SIEMENS BUZ 16 BUZ 16 S2 Electrical Characteristics at 7] = 25 °C, unless , BUZ 16 BUZ 16 S2 Gate threshold voltage Vqs = ^ds i I d —1 nnA Vqs (th ) Zero gate voltage drain current Vqs = 0 V, Vos = 50 V BUZ 16 VG = 0 V, Vos = 60 V S BUZ16S2 7] = 25 "C T,= 125’C


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PDF BUZ16S2 O-204 C67078-S1020-A2 C67078-S1020-A3 23SbG5 16/S2 SIL02173 fl23SbDS
2009 - IEC-61249-2-21

Abstract: No abstract text available
Text: BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free Yes Rev. 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ32 H3045A Rev. 2.2 9 2009-11-10 BUZ32 H3045A


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PDF H3045A IEC61249-2-21 BUZ32 IEC-61249-2-21
1998 - BUZ12

Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ MOSFET kp1022 BSP149 equivalent BUZ12AL BSP149 BUZ41A
Text: between the following subcomponents: DC-relevant subcomponents: a) The inner MOSFET MBUZ describes the , , is represented as 'depletion mode MOSFET ' MVRD. The voltage dependence of the drain resistance is , drain-source pn junction. This field effect narrows the current path between the source islands of the MOSFET , MOSFET and at the same time shift the capacitance curves toward higher voltages. This circuit variant is , from the MOSFET input characteristic Id = Id(Ug) at Uds = const The input characteristic of the


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PDF compon99 BUZ12 SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ MOSFET kp1022 BSP149 equivalent BUZ12AL BSP149 BUZ41A
1995 - 24 hour timer application

Abstract: lcd clock module 5. buzzer alarm adjustable seconds timer 24 hour timer lcd alarm clock
Text: / BUZ ) [VOH] Lo level output voltage (CNT/SLP) [VOL] -0.5 SEC/ MTH V IOL = 5µA V IOL-250µA Lo level output voltage BUZ [VOL] -0.5 0 V Display mode selection ALM LO , count down. RES 2 To re-set tape counter and SLP timer. BUZ EN When pulled LO - CNT OUT pin is HI , CNT OUT and BUZ OUT deliver signal when alarm time is reached. CNT OUT I) HI for 5 minutes when , time is reached and with buzzer enable LO. BUZ OUT Deliver signal to sound alarm when alarm time is


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1988 - adjustable seconds timer

Abstract: F9338
Text: . RES 2 Hi level output To re-set tape counter and SLP timer. voltage IOH = 100µA -0.5 V BUZ EN When pulled LO - CNT OUT pin is HI (CNT/SLP/ BUZ ) when alarm time is reached (period of [VOH] HI signal programmable by S1, S2 and S3). When pulled HI - both CNT OUT Lo level output and BUZ OUT deliver signal when , S3 voltage IOL-250µA 0 V when alarm time is reached and with BUZ [VOL] buzzer enable LO. BUZ OUT , . HI LO LO LO Alarm time RES 1 When pulled HI - both CNT OUT and BUZ OUT cut-off and disable alarm


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PDF F9338 24H/12H adjustable seconds timer F9338
BUZ 323

Abstract: No abstract text available
Text: SIEMENS SIPMOS ® Power Transistor BUZ 323 · N channel · Enhancement mode · Avalanche-rated 1 i V 'O bS B Pin 1 G Pin 2 D Pin 3 S Type BUZ 323 Vbs 400 V b 15 A fbsion) 0.3 n , 879 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified BUZ , , Vds = 25 V, / = 1 MHz Reverse transfer capacitance Vq s = Crss Goss Q ss BUZ 323 Values typ , 7b = 25 °C Inverse diode forward voltage Vg s BUZ 323 Values typ. max. Unit A 15 Ism


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PDF O-218AA C67078-S3127-A2 BUZ 323
KSS 240

Abstract: No abstract text available
Text: SIEMENS SIPMOS ® Power Transistor BUZ 31 · N channel · Enhancement mode · Avalanche-rated Type BUZ 31 Vds 200 V to 14.5 A ^DS(on) 0.2 f l Package TO-220 AB Ordering Code , SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified BUZ 31 Parameter , BUZ 31 Values typ. max. Unit 9fs 5 10 S pF 840 C0ss 1120 , A/ps Or r 1.1 írr ^SD BUZ 31 Values typ. max. Unit A 14.5


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PDF O-220 C67078-S 1304-A2 GPT35I55 KSS 240
Supplyframe Tracking Pixel