The Datasheet Archive

BUV46A datasheet (12)

Part Manufacturer Description Type PDF
BUV46A Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
BUV46A STMicroelectronics HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Original PDF
BUV46A AnalogicTech POWER TRANSISTORS Scan PDF
BUV46A Mospec Switchmode Series NPN Power Transistor Scan PDF
BUV46A Mospec POWER TRANSISTORS(6A,400-450V,70W) Scan PDF
BUV46A Others Semiconductor Master Cross Reference Guide Scan PDF
BUV46A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUV46A STMicroelectronics High Voltage NPN Silicon Power Transistors Scan PDF
BUV46A STMicroelectronics Shortform Data Book 1988 Scan PDF
BUV46A Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BUV46AFI Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUV46AFI STMicroelectronics Shortform Data Book 1988 Scan PDF

BUV46A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BUV46

Abstract: buv46a npn 2a fast switching buv46buv46a
Text: SavantIC Semiconductor Product Specification BUV46 BUV46A Silicon NPN Power Transistors , BUV46A BUV46 VALUE 850 UNIT V 1000 Open base BUV46A 400 V 450 Open collector , SavantIC Semiconductor Product Specification BUV46 BUV46A Silicon NPN Power Transistors , . MAX UNIT 400 IC=0.1A ;IB=0 V 450 BUV46A BUV46 IC=2.5A ;IB=0.5A BUV46A IC , BUV46A V IC=2.5A; IB=0.5A BUV46A IC=2A; IB=0.4A ICER Collector cut-off current VCE


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PDF BUV46 BUV46A O-220C BUV46 buv46a npn 2a fast switching buv46buv46a
BUV46 transistor

Abstract: BUV46A BUV46
Text: f Z Z S G S -IH O M SO N Ra0©^®mUiOT®08D©i BUV46/FI BUV46A HIGH VOLTAGE NPN SILICON POWER , BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The BUV46A and BUV46FI are silicon multiepitaxial mesa NPN , BUV46FI 850 850 400 7 BUV46A 1000 1000 450 5 3 Unit V V Collector-Emitter Voltage (V be = 0 , for BUV46/FI for BUV46A Is - 0.5 A Ib - 0.7 A la > 0.4 A Ib = 0.6 A Ib = 0.5 A Ib = 0.4 A , Tc = 125 °C V be = 7 V lc = 100 mA for BUV46/FI lc = 2 .5 A lc = 3 .5 A for BUV46A lc = 2 A lc = 3


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PDF BUV46/FI BUV46A ISOWATT220 E81734 BUV46A BUV46FI O-220 BUV46 transistor BUV46
Not Available

Abstract: No abstract text available
Text: BUV46 BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ■STMicroelectronics PREFERRED SALESTYPES . NPN TRANSISTORS . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION , alue U nit BUV46 BUV46A VcES C o lle c to r-E m itte r V o lta g e ( V b e = 0) 850 , -6 5 to 150 °c °c 150 1/4 BUV46 / BUV46A THERMAL DATA Rthj-c T h e rm a l R e , 0.8 |IS Vcc Vcc = 150 V |IS |IS |IS |IS BUV46 / BUV46A TO-220 MECHANICAL


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PDF BUV46 BUV46A O-220
BUV46

Abstract: BUV46A
Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV46 BUV46A , maximum ratings (Tc=25) SYMBOL PARAMETER BUV46 VCBO Open emitter BUV46A VCEO VEBO , OND CONDITIONS VALUE 850 V 1000 400 Open base BUV46A Emitter-base voltage Open , Specification Silicon NPN Power Transistors BUV46 BUV46A CHARACTERISTICS Tj=25 unless otherwise , INC Turn-on time ts Fall time For BUV46 IC=2.5A;IB1=-IB2=0.5A;VCC=150V For BUV46A IC


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PDF BUV46 BUV46A O-220C BUV46 BUV46A
BUV46

Abstract: BUV46A BUV46AFI ISOWATT-220 BUV46FI ISOWATT220
Text: .,„„, ISOWATT220 BUV46 BUV46FI BUV46A BUV46AFI Unit VcES Collector-emitter Voltage (VBe = 0 , BUV46/FI BUV46A /AFI HIGH VOLTAGE POWER SWITCH iESCRIPTION he BUV46/A and BUV46FI/AFI are silicon , ) VcEOfsus)* Collector-emitter !0= 100mA for BUV46/FI 400 V Sustaining Voltage for BUV46A /AFI 450 V VcE , lB = 0.7A 5 V for BUV46A /AFI lc=2A le = 0.4A 1.5 V lc=3A Ib = O.SA 5 V VBE(sa¡}* Base-emitter for BUV46/FI Saturation Voltage le = 2.5A la = 0.5A 1.3 V for BUV46A /AF1 lc = 2A 1


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PDF BUV46/FI BUV46A/AFI BUV46/A BUV46FI/AFI thejedecTO-220 ISOWATT220 BUV46 BUV46FI BUV46A BUV46AFI ISOWATT-220
1998 - BUV46

Abstract: BUV46A cex 06 buv46buv46a
Text: BUV46 BUV46A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s , Symbol Parameter Value BUV46 Unit BUV46A V CES Collector-Emitter Voltage (V BE = 0 , -65 to 150 o C 150 o C 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal , Saturation Voltage I C = 100 mA for BUV46 I C = 2.5 A I C = 3.5 A for BUV46A IC = 2 A IC = 3 A for BUV46 for BUV46A 400 450 V V I B = 0.5 A I B = 0.7 A 1.5 5 V V I B = 0.4 A


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PDF BUV46 BUV46A O-220 O-220 BUV46 BUV46A cex 06 buv46buv46a
1997 - transistor t220

Abstract: BUV46 BUV46FI BUV46A
Text: BUV46/FI BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s s SGS-THOMSON , FLUORESCENT LIGHTING 1 2 3 3 1 TO-220 DESCRIPTION The BUV46A and BUV46FI are silicon , Collector-Emitter Voltage (V BE = 0) BUV46 BUV46FI BUV46A Uni t 850 1000 V V CEX , C = 100 mA for BUV46/F I I C = 2.5 A I C = 3.5 A for BUV46A IC = 2 A IC = 3 A for BUV46/F I I C = 2.5 A for BUV46A IC = 2 A o for BUV46/FI for BUV46A Typ . 400 450 V V I


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PDF BUV46/FI BUV46A ISOWATT220 E81734 O-220 BUV46A BUV46FI O-220 ISOWATT220 transistor t220 BUV46
1998 - BUV46

Abstract: BUV46A buv46buv46a
Text: BUV46 BUV46A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s , Symbol Parameter Value Uni t BUV46 BUV46A V CES Collector-Emitter Voltage (VBE = 0 , W -65 to 150 o C 150 o C 1/4 BUV46 / BUV46A THERMAL DATA R t hj-ca se , Saturation Voltage I C = 100 mA for BUV46 I C = 2.5 A I C = 3.5 A for BUV46A IC = 2 A IC = 3 A o for BUV46 for BUV46A 400 450 V V I B = 0.5 A I B = 0.7 A 1.5 5 V V I B = 0.4 A


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PDF BUV46 BUV46A O-220 O-220 BUV46 BUV46A buv46buv46a
BUV46B

Abstract: BUV46 BUV46A buv46buv46a 07 le 90 vce 850
Text: 450 V (Min) BUV46A * Collector-Emitter Saturation Voltage - vCE(sat)=1 5 v (Max) 6 lc = 2.5 A / 2 , BUV46A 6 AMPERE POWER TRANASISTORS 400-450 VOLTS 70 WATTS Characteristic Symbol BUV46 BUV46A Unit , Voltage (lc= 0.2 A,Ib= 0, L=25 mH ) BUV46 BUV46A ^CEO(sus) 400 450 V Collector Cutoff Current (VCE= 850 V, Rbe =S 10 ohm ) BUV46 (VCE= 1000 V, Rbe =S 10 ohm ) BUV46A 'cER 300 300 uA Collector Cutoff Current (VCE= 850 V, VBE=-2.5 V) BUV46 (VCE= 1000 V, VBE=-2.5 V) BUV46A 'cE* 100 100 uA Emitter Cutoff


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PDF BUV46 BUV46A BUV46 BUV46A BUV46B buv46buv46a 07 le 90 vce 850
BUV46FI

Abstract: E81734 BUV46 BUV46A NPN Transistor isolated T0-220
Text: ¿t7 SGS-THOMSON BUV46FI BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS . SGS-THOMSON , LIGHTING DESCRIPTION The BUV46A and BUV46FI are silicon multiepitaxial mesa NPN transistors in the Jedec , MAXIMUM RATINGS Symbol Parameter T0-220 ISOWATT220 BUV46 BUV46FI BUV46A Unit VcES Collector-Emitter , )* Collector-Emitter lc = 100 mA for BUV46/FI 400 V Sustaining Voltage for BUV46A 450 V VcE(sat , V for BUV46A lc = 2 A lB = 0.4 A 1.5 V lc = 3 A lB = 0.6 A 5 V VßE(sat


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PDF BUV46FI BUV46A ISOWATT220 E81734 BUV46A BUV46FI T0-220 BUV46/FI-BUV46A ISOWATT22Q E81734 BUV46 NPN Transistor isolated T0-220
2005 - BUV46A

Abstract: No abstract text available
Text: Product Specification www.jmnic.com BUV46A Silicon Power Transistors DESCRIPTION With TO-220C package High voltage Fast switching APPLICATIONS General purpose switching Switch mode power supplies Electronic ballasts for fluorescent lighting PINNING PIN DESCRIPTION 1 , BUV46A Silicon Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , BUV46A Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance


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PDF BUV46A O-220C 100mA BUV46A
2002 - Not Available

Abstract: No abstract text available
Text: BUV46A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 850V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 6A All Semelab hermetically sealed products can


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PDF BUV46A O204AA) 18-Jun-02
buv46afi

Abstract: No abstract text available
Text: f Z 7 S G S -T H O M S O N " 7 # ^D æ sm iO TM tgS BUV46/FI BUV46A /AFI HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedec T0-220 plastic package and ISOWATT220 fully isolated package respectively, intended for high , t Base C urre n t T 0-220 IS O W A TT220 BUV46 BUV46FI 850 850 400 7 5 3 T O -220 BUV46A BUV46AFI 1000 1000 450 Unit V V V V A A < m o V ebo lc Ib O IS O WA TT2 20 30 W °C °C


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PDF BUV46/FI BUV46A/AFI BUV46/A BUV46FI/AFI T0-220 ISOWATT220 TT220 BUV46 BUV46FI BUV46A buv46afi
2002 - BUV46A

Abstract: No abstract text available
Text: BUV46A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 850V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 6A 7.92 (0.312) 12.70 (0.50) All Semelab


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PDF BUV46A O204AA) 31-Jul-02 BUV46A
BUV26

Abstract: but100
Text: BUV26 BUV27 BUV28 BUV46 BUV46A BUV46FI BUV48 BUV48A BUV48AFI BUV48B BUV48C BUV48CFI BUV48FI


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PDF BUL310PI BUL381 BUL381D BUL382 BUL382D BUL416 BUL510 BUL810 BULD118-1 BULD118D-1 BUV26 but100
2002 - Not Available

Abstract: No abstract text available
Text: BUV46A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 850V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 6A All Semelab hermetically sealed products can


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PDF BUV46A O204AA) 16-Jul-02
Not Available

Abstract: No abstract text available
Text: un 7^5^237 0020741 2 ■SGS-THOMSON [»[H ](»gC T(g«S 13 BUV46/FI BUV46A /AFI S G S-TH0MS0N 3QE ] > HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedecTO-220 plastic package and ISOWATT22C) fully isolated package respectively, intended for high voltage, fast switching applications. INTERNAL SCHEMATIC DIAGRAM ,c B O - NPN ^ O E S - ba y/ ABSOLUTE MAXIMUM RATINGS S ym b o l P a


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PDF BUV46/FI BUV46A/AFI BUV46/A BUV46FI/AFI jedecTO-220 ISOWATT22C) BUV46 V46FI 300ns,
BUT13P

Abstract: BLN20 BUS50 SOT93 BUT14 BUV62 BUV42A but72 BUS13 BUS14A
Text: 5min /2.5 85 BUV46A NPN T03 850 6 5min /2.5 85 BUV46AP NPN T0220 450 6 85 BUV47 NPN S0T93


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PDF GG004S4 BUS13 15min BUS13A BUS14A BUS50 20min BUS51 BUT13P BLN20 SOT93 BUT14 BUV62 BUV42A but72
2001 - BUS11-JQR-B

Abstract: 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3
Text: PRODUCT BUV46 BUV46A Polarity NPN NPN Package TO3 TO3 VCEO 850V 850V IC(cont) 6A 6A HFE(min) 5 5 HFE(max


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PDF BUS12" BUS12 BUS12A BUS12ACECC BUS12A-JQR-B BUS12CECC BUS12-JQR-B BUS11" BUW49" BUW49 BUS11-JQR-B 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3
1984 - bu2527af

Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
Text: 'BUV41 ·BUV42 ·BUV42A ·BUV46 'BUV46 · BUV46A ' BUV46A ·BUV47 'BUV47 ·BUV47A 'BUV47A ·BUV48 'BUV48 ·BUV48A


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PDF roku1984/85, VQB200 VQB201 VQC10 VQE11 VQE12 VQE13 VQE14 VQE21 VQE22 bu2527af wk16412 WK16413 WK16414 Tesla katalog VQE24 4DR823B kr206 5DR801B
2N2222A-PL

Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2SC945 smd 2S-C3883 smd 2n3055 bu415a
Text: 8 100 T0220 BUT76A 1000 10 100 T0220 BUV46A 1000 6 85 T0220 BUV48A 1000 15 150 SOT93 BUW11A


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PDF BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2SC945 smd 2S-C3883 smd 2n3055 bu415a
1999 - BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 ST1803DHI equivalent TIP3055 TO-220 BU508aFI equivalent BU808DFI
Text: BUT90 BUT92 BUT100 BUT232V BUTW92 BUV20 BUV21 BUV26 BUV27 BUV28 BUV46 BUV46A BUV48A


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PDF 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 ST1803DHI equivalent TIP3055 TO-220 BU508aFI equivalent BU808DFI
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: BUV44 BUV45 BUV46 BUV46A BUV46FI BUV47 BUV47A BUV47AFI BUV47AI BUV47FI BUV47I BUV48 BUV48A , BUX98A BUV26 BUV27 BUV28 BUX10 BUX10 BUX48 BUX48 BUX48A BUV46 BUV46A BUV46FI BUV48A BUV48A


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: BUV28 BUV39 BUV40 BUV41 BUV42 BUV42A BUV44 BUV45 BUV46 BUV46A BUV46FI BUV47 BUV47A BUV47AFI , BUX48A BUV46 BUV46A BUV46FI BUV47A BUV47A BUV48 BUV48A BUV48AFI BUV48AFI BUV48AFI BUV48AFI


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: No file text available


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
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