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Part Manufacturer Description Datasheet Download Buy Part
LT1006MH Linear Technology IC OP-AMP, 460 uV OFFSET-MAX, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1006MJ8 Linear Technology IC OP-AMP, 460 uV OFFSET-MAX, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1078CH Linear Technology IC DUAL OP-AMP, 460 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
MAX3318CDBG4 Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP 0 to 70
MAX3318IDB Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP -40 to 85
MAX3318EIDB Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-SSOP -40 to 85

BUV+460+C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BUF 460 AV

Abstract:
Text: MODULES BIPOLAR IN ISOTOP ISOTOP : Faston version Bipolar transistors o C H DARLINGTONS (3) Darlingtons Internal schematic diagrams DARLINGTONS plus freewheel diode (4) ' c VCBO VCEO Ptot Type Internal VCE (sat) @ > c ' 'B »d + lr «si tfi VCEV* schematic «s* «f* See NOTE diagram max , 850* 450 300 BUF 460 V 1 0.5 typ 30 3 — 2 * 0.1* 90 1000* 450 300 BUF 460 AV 1 0.5 typ 30 3 — 2 , 2012 DV 4 1.5 typ 100 1 — 2 0.3 For switching times, Tj = 100° C . NOTE : FASTON VERSION -


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CI 13007

Abstract:
Text: DC-DC converters will be suitable. BIPOLAR POWER TRANSISTORS ' C vCBO VCEO ptot Package Type VCE (sat , RANGE ' c vCBO VCEO pto» Package Type NPN vCE(sat)@ " C ' >B •r 'si «fi «d + *r* «s* tf , times, Tj = 100° C , unless otherwise specified. (1) Tj =25° C (2) Darlingtons. 1200 V VCBO RANGE ' C VCBO VCEO P»Ot Package Type vCE(sat)@ ' c ' 'b C 1.5 6 1.5 1 6 0.6 15 1200


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PDF ST24C02 TS59C11 TS93C46 M9306 M9346 CI 13007 bud48 13005 A BUD48A BUX 115 MJE-13007 13005 ballast BUD98I BUV-481 BUD47
buw48

Abstract:
Text: LöSAGrlBB POWER TRANSISTORS Transistors for switching with high operating frequencies at middle voltage stress Type Vcbo Vceo ' c Ptot VCEsat tf at lc Case (V) (V) (A) (W) (V) (jiS) (A) JEDEC BUV 20 160 125 50 250 <1.2 <0.3 50 BUV 21 250 200 40 250 <1.5 <0.4 25 BUV 22 300 250 40 250 <1.5 <0.5 20 BUV 23 400 325 30 250 <1.0 <1.2 16 BUV 24 450 400 20 250 <1.0 <1.4 12 BUV 25 500 500 15 250 <1.0 <1.6 8.0 BUV 26 180 90 14 65 <1.5 <0.3 12 BUV 26A 200 100 14 65 <1.0 <0.3 10 BUV 27 240 120 12


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PDF T004524 T0-220 O-218 buw48 BUW89 BUW52 BUW91 BUV24 buv 89 BUV51 buw38 BUV 48-SE buv 40 a
transistor buv 90

Abstract:
Text: SUPERSWITCH transistor TO-220 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \vcEO(sus) 90V 120V 200V 400V \ VCEX Case 180V 240V 400V 850V ' C (sat) 12 A BUV 26 # 8 A BUV 27 6 A BUV 28 2,5 A BUV 46 1 A BUV 36 SUPERSWITCH power , collector-emitter saturation voltage (sat| are specified in our data-sheets at ' C (sat)- /q (satI est ta valeur du , = 100 °C (2) Typical value Valeur typique T - 25°Cun'ess ot^erw'se specified c - sauf spÃ


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PDF O-220 00V-600V 1000T 2060T CB-244 CB-285 transistor buv 90 transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C
ksd 302 250v, 10a

Abstract:
Text: . In der Regel gelten diese Werte bei 25° C wenn nicht anders vermerkt wurde. “c Bei Transistoren , apply at 25° C , unless otherwise indicated. " c With transistors, the usal situation is for UC 0 , inferieure (> = min.) garantie. En regie g6nerale ces valeurs sont valables a une temperature de 25° C , sauf , quelli superiori (< = max.) o inferiori (> = min.) garantiti. Di regola, i valori si riferiscono a 25° C , (> = min.). Por regia general y salvo indication contraria, estos valores son validos con 25° C . Uc


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 bf199 AC153Y TIP 43c transistor 2sk116 IRF 3055 transistor ESM 2878 A/BDW 945
buv48

Abstract:
Text: TELEFUNKEN ELECTRONIC ¡nULKPHÄIN) electronic C rw tN *T fc c h o o to g * 17E D , Collector peak current Base current, average Base peak current ' C M BAV BM BUV 48 ' C EO BUV 48 A 450 400 850 7 15 30 5 20 4 1000 V V V A A A A A 'eao T1.2/795.088B E 2690 C - ll 169 , disspation Tcase S 2 5 ° C .Junction temperature Storage temperature range Maximum thermal resistance Junction case Characteristics T« , , " 25 ° C , unless otherwise specified Collector cut-off current 850 V


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PDF 15A3DIN buv48 BC 171 NPN transistor transistor bc 237c transistor buv BUV 76 BUV48I transistor BUV 92
BUV18

Abstract:
Text: Ptot Total Dissipation at Tc < 25° C 250 W Tstg Storage Temperature - 65 to 200 °C Ti Max. Operating , CHARACTERISTICS (Tcase = 25° C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit IcEX Collector Cutoff Current Voe =Vcex Vbe =-1.5V Vce = Vcex Vbe = - 1.5V Tc = 100° C 1 3 mA mA Iebo , Time for BUV18 1.7 US tf Fall Time Vcc = 60V lc = 80A 0.5 ^s IBI =- IB2 =8A T0 = 125° C ton , IBI =- IB2 = 6A Tc = 125° C * Pulsed : Pulse duration = 300(is, duty cycle = 2% 2/8 426 /=7


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PDF BUV18 BUV19 BUV18 BUV19 16-BUV transistor buv 90 transistor buv transistor TL 431 g BUV18-BUV19 transistor SE 431 iv-18 BUV10 buv 40 a
2013 - Not Available

Abstract:
Text: Thermal Characteristics Maximum Power Dissipation @ TA = 70° C Thermal Resistance Junction-to-Air Operating , 150 -65 to 150 300 1 > 2000 > 200 2000 Unit V V V V V V V mA V mA V mW ° C /W ° C ° C ° C ° C - V V V , = 15 V, TJ from -40° C to +125° C , unless otherwise specified) Symbol START-UP AND SUPPLY CIRCUIT VCC , from -40° C to +125° C , unless otherwise specified) Symbol REGULATION BLOCK VREF Feedback Voltage Reference: @ 25° C Over the temperature range Error Amplifier Current Capability Error Amplifier Gain V 2.44


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PDF NCP1612 SO-10 NCP1612/D
2012 - BUV 460 C

Abstract:
Text: Characteristics Maximum Power Dissipation @ TA = 70° C Thermal Resistance Junction-to-Air Operating Junction , mA mW ° C /W ° C ° C ° C ° C - V V V PD RqJA TJ TJmax TSmax TLmax MSL Stresses exceeding Maximum , ://onsemi.com 2 NCP1612 TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from -40° C to +125° C , unless otherwise specified) Symbol START-UP AND SUPPLY CIRCUIT VCC(on) Start-Up Threshold, VCC , Voltage Reference: @ 25° C Over the temperature range Error Amplifier Current Capability Error Amplifier


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PDF NCP1612 SO-10 NCP1612/D BUV 460 C
2012 - Not Available

Abstract:
Text: Power Dissipation and Thermal Characteristics Maximum Power Dissipation @ TA = 70° C Thermal , TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from −40° C to +125° C , unless otherwise , 12 14 V VREF Feedback Voltage Reference: @ 25° C Over the temperature range 2.44 , CHARACTERISTICS (Conditions: VCC = 15 V, TJ from −40° C to +125° C , unless otherwise specified) Symbol , ://onsemi.com 4 NCP1612 TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from −40° C to


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PDF NCP1612 NCP1612 NCP1612/D
pnp transistor 1000v

Abstract:
Text: ' c (sat) N. 40 A BUW 4ff # 30 A BUW 49 20 A BUX 69 ISA BUX 70 , ©lection transistors ISOTOP SUPERSWITCH \VceO (sus) \VCEX ' c (satf^X 400V 850V 450V 1000V 600V 900V 700V , . ( C (sat)is the recommended operating collector current value. Switching times tj, ly, ts and tf, and the collector-emitter saturation voltage Vçg (sat) are specified in our data-sheets at ' C (sat)- ' C , specified c - sauf spécification contraire mj. New product ' Nouveau produit ISOTOP CB-285 32


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PDF BUV48 BUV47 CB-244 CB-285 pnp transistor 1000v transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
BUD48

Abstract:
Text: DARLINGTONS Internal schematic diagrams c B o- -o E Bipolar transistors Darlingtons except BUD 48 DI B o- 0 c < - c < -O E Darlington BUD 48 DI 120 / 300 V VCBO RANGE ■c VCBO VCEO Ptot Package Type NPN VCE (sat)@ ' c ' ■b »r C , unless otherwise specified. (1) Tj = 25° C 96 r=J S GS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR 350 / 650 V VCBO RANGE


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PDF D44Q1 D44Q3 D44Q5 BUV27 BUD48 BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW52 BUW38 bux348 TR MJE 350
BUV 471

Abstract:
Text: RANGE ' c vCBO VCEO pto» Package Type NPN vCE(sat)@ " C ' >B •r 'si «fi «d + *r* «s* tf , times, Tj = 100° C , unless otherwise specified. (1) Tj =25° C (2) Darlingtons. 1200 V VCBO RANGE ' C VCBO VCEO P»Ot Package Type vCE(sat)@ ' c ' 'b C 1.5 6 1.5 1 6 0.6 15 1200 700 175 TO 3 BUX 48 C 1.5 6 1.5 1 6 0.6 30 1200 700 250 TO 3 BUX 98 C 1.5 12 3 1 6 0.6 For


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PDF BUX84 BUV46 BUV 471 BUV 481 BUV-481 CI 13007 BUX 115 MJE-13007 MJE13005A BUV-471 BUD47 MJE13007
bux c

Abstract:
Text: \VCEO (sus) \vCEX ' C (satj^v 60V 120 V 80V 160V 90V 120V 125V 160V 200V 250V 250V 300V 325V 400V , 43 BUX 47A 4 A BUX 44 BUX 15 ESM 1503 2-2,5 A BUX 45 BUX 46 ' C (sat , collector-emitter saturation voltage Vçg (sat) are specified in our data-sheets at ' C (sat)- I CI sat) est 'a , uana uva nuimco o iç IS31!' C c •v m Ta s Kj en s § Z5 W> 55' -h ? ® CO ^ -i o 0 ¿1 1 (Q U c M oo a ® S Q- « m (ri GO en ÎÎ < ôt« —I Q. £. X =3 (0 li


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PDF BUW38 BUX48 CB-19 CB-159 CB-19) bux c BUX23 ESM750A BUW38 ESM750 ESM952A BUV18 bux 40a BUX12 BUX13
BUV93

Abstract:
Text: Case: ~ Dimensions see page 8 P.c. at w ^caBfl °c ' c A VCES V "CEO V f, at (IS ' c A "FE a t / c an A , r¥ una J J B 3,94 -'-+ c 1 254 T1 Fig. 1:10A3 DIN 41868 JEDEC TO 92 Z Weight max. 0.2 g r 11


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PDF OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 TE13002 13002 TO-92 13007 13003 TO-92 13003
buv 40 a

Abstract:
Text: 0>l new switching transistors ^ ^ ^ nouveaux transistors de com mutation rapide thomson-csf SUPERSWITCH 2 \VCEO(sus) ^NVCEV ' C (sat)* 90 V 160 V 125 V 250 V 200 V 300 V 250 V 350 V Case 50 A BUV 60 24 A BUV 61 20 A BUV 50 16 A BUV 62 15 A BUV 39 11 A BUV 40 10 A BUV 51 , 10 A BUW 51 w 8 A BUW 52 TOP 3 6 A BUW 91 4 A BUW 92 ' > C |sat)is specified for VCE , VCEO (V) VcEV (V) ' C (sat) (A) tf max 100 °C (ns) Case BUV 36 A 450 1000 1 400 BUV 46 A 450 1000 2


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PDF BUW89 buv 40 a BUV56 BUW90 BUW89 BUV36A BUV56a BUV 12 BUW52 9010A BUW91
ESM750A

Abstract:
Text: li THOMSON-CSF metal power transistors transistors de puissance métalliques Type VCEO le Ptot 1*21 E / ' C VCE (sat) ! " C / 'B td + tr ts *f C«ff* min I maxi max max max max min (V) (A) (W) (A) (V) (A) (A) (us) C unless otherwise specified sauf spécification contraire N : . New product CB-19 CB


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PDF BUX48 CB-19 CB-159 CB-19) CB-159) ESM750A ESM750 esm952a BUW38 ESM952 BUX40
buv 47 i

Abstract:
Text: BUV 47 A 1000 450 V V V A A A A A 2 T1.2y793.0888 E 2684 C - 05 163 , power disspation Tc « « « ~25° C v Junction temperature Storage temperature range Maximum thermal resistance Junction case * Characteristics Tcttt *» 25 ° C , unless otherwise specified Collector cut-off , / c 100mA,L.*»125 mH BUV 47 |CE0, BUV 47 A >(BR)CEO Emitter-base breakdown voltage /E" 1 mA Collector-emitter saturation voltage / c > «5 A, l6 * 1 A Base-emitter saturation voltage / C = 5V,/B- 1 A , DC forward


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PDF 15A3DIN buv 47 i transistor BF 164 L61A
BUX23

Abstract:
Text: r=J S GS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR 350 / 650 V VCBO RANGE ' c VCBO VCEO Ptot Package Type NPN vCE(sat)@ > C 1 IB tr «Si «fi td + V »S* «f* <1> max max max max (A) (V) (V) (W) (V) (A) (A) M G*> M 4 600 300 75 TO 220 MJE 13004 1 4 1 0.7 3.5 , 350 250 350 TO 3 BUR 52 1.8 25 2 1 2 *(1) 0.6 * (1) For switching times, Tj ■= 100° C unless otherwise specified. (1) Tj - 25° C . (2) Darlingtons. 97


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AEG motor

Abstract:
Text: 325° C casa ^ Junction temperature Storage temperature range Maximum thermal resistance Junction , = 1500 V ^caso = 125° C , VCE= 1300V Collector-emitter breakdown voltage / c =500 mA, Lc= 125 mH Emitter breakdown voltage /E=1 mA Collector saturation voltage /G=9A,/B=4.5A / c = 5A,/b = 1.25A Base saturation voltage V Gain bandwidth product / C =9V,/H = 4.5A, VC6= 10 V, / c = 500 mA, f= 1 MHz Switching characteristics Resistive load Vcc=250V;tp = 20ps. / C = 5A,/B1=-IB2 = 1A Fall time Storage time Turn-on time


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PDF QD0T571 T-33-13 AEG motor B45A aeg d 188 aeg d 188 s 1000 aeg t 188 buv 71
BUV18

Abstract:
Text: < 5ms) 40 30 A Ptot Total Dissipation at Tc < 25° C 250 W Tstg Storage Temperature - 65 to 200 °C Tf Max. Operating Junction Temperature 200 " C November 1988 1/8 425 BUV18-BUV19 1 7^5*^537 , Junction-case max | 0.7 | °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25° C unless otherwise specified) Symbol , 80A 0.5 fis Ibi = - Ib2 = 8A T0 =125° C Turn-on Time for BUV19 0.9 1.3 us ts Storage , BUV19 1.7 us tf Fall Time Vcc = 80V le = 60A 0.5 us Ibi = - Ib2 = 6A T0 = 125° C * Pulsed


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PDF T-33-IS BUV18 BUV19 lr-/ln-10 18-BUV transistor buv 90 BUV19 BUV18-BUV19 transistor buv
BUT136

Abstract:
Text: No file text available


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PDF O-220 BUT136 BUV 48A
2012 - ncp1612

Abstract:
Text: Characteristics Maximum Power Dissipation @ TA = 70° C Thermal Resistance Junction-to-Air Operating Junction , mA mW ° C /W ° C ° C ° C ° C - V V V PD RqJA TJ TJmax TSmax TLmax MSL Stresses exceeding Maximum , ://onsemi.com 2 NCP1612 TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from -40° C to +125° C , unless otherwise specified) Symbol START-UP AND SUPPLY CIRCUIT VCC(on) Start-Up Threshold, VCC , Voltage Reference: @ 25° C Over the temperature range Error Amplifier Current Capability Error Amplifier


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PDF NCP1612 SO-10 NCP1612/D BUV 460 C
darlington NPN 1000V 8a transistor

Abstract:
Text: & (1} Tc = 100 °C (2) Typical value Valeur typique T - 25°Cun'ess ot^erw'se specified c - sauf


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PDF 130CIV 109DP O-220 104DP CB-244 CB-285 darlington NPN 1000V 8a transistor NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a pnp transistor 800v transistor ESM 16 transistor 406 specification transistor BU 109 pnp transistor 1000v
2013 - NCP161

Abstract:
Text: Dissipation and Thermal Characteristics Maximum Power Dissipation @ TA = 70° C Thermal Resistance , ELECTRICAL CHARACTERISTICS (Conditions: VCC = 15 V, TJ from −40° C to +125° C , unless otherwise specified , Voltage Reference: @ 25° C Over the temperature range 2.44 2.42 2.50 2.50 2.54 2.54 IEA , , TJ from −40° C to +125° C , unless otherwise specified) Symbol Rating Min Typ Max , . TYPICAL ELECTRICAL CHARACTERISTICS (continued) (Conditions: VCC = 15 V, TJ from −40° C to +125° C


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PDF NCP1612 NCP1612 NCP1612/D NCP161
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