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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BUT12A Fairchild Semiconductor Corporation Rochester Electronics 1,091 $1.27 $1.03
BUT12A Fairchild Semiconductor Corporation ComS.I.T. 210 - -
BUT12A Philips Semiconductors Chip One Exchange 99 - -

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BUT12A datasheet (26)

Part Manufacturer Description Type PDF
BUT12A Fairchild Semiconductor NPN Silicon Transistor Original PDF
BUT12A Philips Semiconductors Silicon diffused power transistors Original PDF
BUT12A Various Russian Datasheets Transistor Original PDF
BUT12A Wing Shing Computer Components SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) Original PDF
BUT12A Fairchild Semiconductor NPN SILICON TRANSISTOR Scan PDF
BUT12A Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BUT12A Others Cross Reference Datasheet Scan PDF
BUT12A Others Cross Reference Datasheet Scan PDF
BUT12A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUT12A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUT12A Philips Semiconductors Silicon diffused power transistors Scan PDF
BUT12A Philips Semiconductors Silicon diffused power Transistors Scan PDF
BUT12AF Philips Semiconductors Silicon diffused power transistors Original PDF
BUT12AF Philips Semiconductors Silicon Diffused Power Transistor Original PDF
BUT12AF Various Russian Datasheets Transistor Original PDF
BUT12AF Wing Shing Computer Components SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) Original PDF
BUT12AF Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUT12AF Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUT12AFI Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUT12AI NXP Semiconductors Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast Original PDF

BUT12A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR but12

Abstract: No abstract text available
Text: Converters · Inverters · Switching regulators · Motor control systems. BUT12; BUT12A F o i MBB008 3 , BUT12A VcEO collector-emitter voltage BUT12 BUT12A VcEsat icsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A lc ¡CM Plot tf collector current (DC) collector current (peak , 134). SYMBOL V CESM PARAMETER coliector-emitter peak voltage BUT12 BUT12A coliector-emitter voltage BUT12 BUT12A collector saturation current BUT12 BUT12A collector current (DC) collector current


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PDF O-220AB BUT12; BUT12A MBB008 MBK106 O-22QAB) BUT12 BUT12A TRANSISTOR but12
BUT12A

Abstract: No abstract text available
Text: collector; connected to mounting base emitter BUT12; BUT12A QUICK REFERENCE DATA SYMBOL VcESM BUT12 BUT12A VCEO collector-emitter voltage BUT12 BUT12A VcEsat Icsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A ·c ICM Plot tf collector current (DC) collector current (peak , PARAMETER < w m 1 ! BUT 12; BUT12A CONDITIONS o MIN. MAX. UNIT collector-emitter peak voltage BUT12 BUT12A collector-emitter voltage BUT12 BUT12A collector saturation current BUT12 BUT12A


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PDF T0-220AB BUT12; BUT12A BUT12 BUT12A
BUT12

Abstract: BUT12A BUT12AF BUT12F
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , peak voltage MAX. UNIT VBE = 0 BUT12 V 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A VCEO 850 BUT12A 5 A 8 A , diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum


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PDF BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) O-220 BUT12 BUT12A BUT12AF BUT12F
BUT12A

Abstract: BUT12 MGE246
Text: DISCRETE SEMICONDUCTORS QMTÄ S^EET BUT12; BUT12A Silicon diffused power transistors Product , specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed , BUT12A 1000 V VcEO collector-emitter voltage open base BUT12 400 V BUT12A 450 V VcEsat collector-emitter saturation voltage see Fig.8 1.5 V Icsat collector saturation current BUT12 6 A BUT12A 5 A , Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A LIMITING VALUES In


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PDF BUT12; BUT12A O-22QAB O-220AB) O-220 O-220 BUT12 MGE246
BUT12

Abstract: BUT12A
Text: DISCRETE SEMICONDUCTORS QMTÄ S^EET BUT12; BUT12A Silicon diffused power transistors Product , power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power , PARAMETER CONDITIONS MAX. UNIT VcESM collector-emitter peak voltage VBE = 0 BUT12 850 V BUT12A 1000 V VcEO collector-emitter voltage open base BUT12 400 V BUT12A 450 V VcEsat collector-emitter saturation voltage see Fig.8 1.5 V Icsat collector saturation current BUT12 6 A BUT12A 5


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PDF BUT12; BUT12A O-22QAB O-220 O-220 BUT12 BUT12A
BUT12

Abstract: BUT12A BUT12A/B T0220AB
Text: N AUER PHILIPS/DISCRETE b^E ]> ■bbsa^i 0020410 TÜ3 BUT12 BUT12A SILICON DIFFUSED POWER , max. max. max. max. max. max. max. max. BUT12 BUT12A 850 1000 400 450 1.5 1.5 6.0 5.0 8 20 , Its Respective Manufacturer N AMER PHILIPS/DISCRETE BUT12 BUT12A b^E J> bbSBTBl Dosami ^T IAPX , . Emitter cut-off current veb = 9v;ic = 0 "ebo max. BUT12 BUT12A 850 1000 400 450 6.0 5.0 8 20 4.0 6.0 , – bb53<ì31, 0D2Û4S0 bbl BUT12 BUT12A IAPX lc = 6 A; lB = 1.2 A vCEsat max. vBEsat max. lc = 5 A


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PDF BUT12 BUT12A T0220 T0220AB. BUT12A BUT12A/B T0220AB
BUT12A

Abstract: BUT12
Text: SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors , CONDITIONS BUT12 BUT12A BUT12 BUT12A Open emitter Open base Open collector VALUE 850 1000 , BUT12 BUT12A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , . MAX 400 V IC=0.1A; IB=0, L=25mH 450 BUT12A BUT12 UNIT IC=6A; IB=1.2A 1.5 1.5 BUT12A IC=6A; IB=1.2A BUT12A V IC=5A; IB=1A BUT12 V IC=5A; IB=1A ICES


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PDF BUT12 BUT12A O-220C BUT12 BUT12A
1997 - BUT12AF equivalent

Abstract: BUT12 BUT12A BUT12AF BUT12F
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , peak voltage MAX. UNIT VBE = 0 BUT12 V 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A VCEO 850 BUT12A 5 A 8 A , diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum


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PDF BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 BUT12AF equivalent BUT12 BUT12A BUT12AF BUT12F
1997 - BUT12

Abstract: BUT12AF BUT12A BUT12F
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , peak voltage MAX. UNIT VBE = 0 BUT12 V BUT12A 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A VCEO 850 5 A collector-emitter , diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum


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PDF BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 BUT12 BUT12AF BUT12A BUT12F
Not Available

Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T3i o o E a m a b*1E J > td3 BUT12 BUT12A SILICON , . QUICK REFERENCE D ATA BUT12 BUT12A Collector-emitter voltage peak value; V g g = 0 open base , M A P X BUT12 BUT12A RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC 134) BUT12A BUT12 Collector-emitter voltage VCESM VCEO max. max. Collector current , – Silicon diffused power transistors b b 5 3 ^ 3 L QQBfiH2Q bbl « A P X B U T12 BUT12A ) BUT12


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PDF BUT12 BUT12A bb53c 00Efl4S3
BUT12

Abstract: 125OC BUT12A T0220AB
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , . Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A RATINGS , = 0 ic BUT12A VCESM max. 850 1000 , specification Silicon diffused power transistors BUT12; BUT12A Saturation voltages lc = 6A; lB = 1.2 A lc= 5 , . tf typ. tf max. BUT12 BUT12A 1.5 - V 1.5 - V - 1.5 V - 1.5 V 10 18 35 10 20 35 400 1.0


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PDF BUT12; BUT12A T0220 BUT12 8UT12A T0220AB. 7Z21446 7110A5b 00777CH 125OC BUT12A T0220AB
but12 transistor

Abstract: No abstract text available
Text: BUT12/12A HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage BUT12 BUT12A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( Tc=25'C) Junction Temperature Storage Temperature V ceo NPN SILICON TRANSISTOR Symbol BUT12 BUT12A VcES Rating 850 1000 400 450 8 20 4 100 150 -65 ~ 175 Unit V V V V A A A W t t le lc la Pc Tj T stg ELECTRICAL CHARACTERISTICS (Tc =25 c


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PDF BUT12/12A BUT12 BUT12A BUT12A 300uS, 100mA, but12 transistor
BUT12A

Abstract: BUT12 PC100-W
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Col lector Base Voltage : BUT12 Vces 850 V : BUT12A 1000 V Collector Emitter Voltage : BUT12 VcEO 400 V : BUT12A 450 V Collector Current (DC) lc 8 A Collector Current (Pulse) lc 20 A Base Current Ib 4 A Collector Dissipation (Tc=25°C) Pc 100 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65 ~ 175 °C ELECTRICAL CHARACTERISTICS (Tc =25°C


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PDF BUT12/12A BUT12 BUT12A 100mA, 10perature 300ns, BUT12A PC100-W
2000 - BUT12A

Abstract: BUT12
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units : BUT12 : BUT12A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT12 : BUT12A 400 450 V V Collector-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC


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PDF BUT12/12A O-220 BUT12 BUT12A BUT12A BUT12
2001 - BUT12

Abstract: BUT12A
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units : BUT12 : BUT12A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT12 : BUT12A 400 450 V V Collector-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC


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PDF BUT12/12A O-220 BUT12 BUT12A BUT12 BUT12A
2000 - BUT12

Abstract: No abstract text available
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 850 1000 400 450 8 20 4 100 150 - 65 ~ 175 V V V V A A A W °C °C Parameter Value Units


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PDF BUT12/12A O-220 BUT12 BUT12A BUT12
2010 - LT049

Abstract: LT042 LT041 SDT13305 sgsf465 sgs-ates transistors BUT56 ET403 NPN sdt13304 ks03
Text: 80 . . . 85 90 95 BUT12A (A) BUT12A (A) 2N6581 2N6584 2N6587 2N6590 BUW26 TIPL765A 2N6752 SDT13204


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PDF BUT12A 2N6581 2N6584 2N6587 2N6590 BUW26 TIPL765A 2N6752 SDT13204 LT049 LT042 LT041 SDT13305 sgsf465 sgs-ates transistors BUT56 ET403 NPN sdt13304 ks03
BUT11AX

Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
Text: BUT11AF BUT11AX BUW11AF BUT11A BUW11A BUT18A BUT12AF BUT12A BUW13AF BUW13A BU505DF BU505F BU505 BU505D


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PDF BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F BUT11 BUT211 BUW11 BUT18 BUT11AX TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
Not Available

Abstract: No abstract text available
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Rating Unit 850 1000 V V 400 450 8 20 4 100 175 -6 5 ~ 1 7 5 V V A A A W °C "C Symbol VcES VcEO lc


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PDF BUT12/12A BUT12A BUT12 100mA,
BU25150X

Abstract: BU2508-AX BU1508DX BU1508AX BU2708AX BUT12AF BU2708DX BU2725DX BUS08D BU2720DX
Text: BUT12A BUT12AF BUT 12AI BUT12F BUT12XI BUT18 BUT18A BUT18AF BUT18F BUT211 BUT211X BUW11F BUW11AF BUW11AW


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PDF BU505 BU505D BU505DF BU505F BU506 BU506D BU506DF BU506F BU508AF BU508AW BU25150X BU2508-AX BU1508DX BU1508AX BU2708AX BUT12AF BU2708DX BU2725DX BUS08D BU2720DX
d4515

Abstract: d209l transistor D208L
Text: DD55 NPN 40 6 BUT11A NPN 7 BUT12A 8 HFE Package PDF Download MIN


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PDF O-126 D1148D D1151 D1160 D1173A BUT11A D4515 2SC3320 BUS13 d4515 d209l transistor D208L
NPN Transistor TO220 vcc 150V

Abstract: BUT12A transistor IC 12A
Text: BUT12A SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220 PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation


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PDF BUT12A O-220 16KHz 100mA 16KHz NPN Transistor TO220 vcc 150V BUT12A transistor IC 12A
2001 - pt 4115 led driver

Abstract: an7527 AN-7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 ML4425 NPN transistor 9013 npn
Text: Application notes back to top BUT12A BUT12ATU Full Production Full Production $0.81 $0.81 TO-220 TO-220 3 3 , BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A , products space space space BUT12A Related Links Products groups NPN Silicon Transistor Analog and Mixed


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PDF BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver an7527 AN-7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 ML4425 NPN transistor 9013 npn
buw13a philips semiconductor

Abstract: 180NS BUW12 BUT18F BUT18AF BUT18A BUT18 BUT12A BUS13 BUS12A
Text: N AMER PHILIPS/DISCRETEL SSE D ■bt.S3T31 QGlbESl Ö ■Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS (cont.) PACKAGE VCE(iat) tftyp at lc TYPE NO. OUTLINE 'ciDOW Vera VCEO MAX. at lcftB (Inductive toad) BUT18 TO-220AB 6A 850V 400V !5Vat4A/0.8A 180ns at 4A BUT18A 1000V 450V BUT18F SOT-186 6A 850V 400V 1.5 V at 4A/0.8A 180ns at 4A BUT18AF (F-PAK) ' 1000V 450V BUT12 TO-220AB 8A 850V 400V 1.5V at 6A/1.2A 80ns at 6A BUT12A 1000V 450V 1.5Vat5A/1A 80ns at 5A BUW12 SOT-93 8A


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PDF S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor BUW12 BUT18AF BUT18A BUT12A BUS13 BUS12A
D304X

Abstract: D4515 d209l d4515 transistor D207L transistor D207L 2sc2623 D208L D1151 BUS14
Text: BUT11A NPN 100 5 900 450 10 40 TO-220   7 BUT12A NPN 100 8


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PDF O-126 O-126 D1160 2SC3320 BUS13 D211L 2SC2623 2N6678 D304X D4515 d209l d4515 transistor D207L transistor D207L 2sc2623 D208L D1151 BUS14
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