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Part Manufacturer Description Datasheet Download Buy Part
LTM4601IV-1#2DMPBF Linear Technology IC DC/DC UMODULE 12A 118-LGA
LTC3610EWP#TRPBF Linear Technology LTC3610 - 24V, 12A Monolithic Synchronous Step-Down DC/DC Converter; Package: QFN; Pins: 64; Temperature Range: -40°C to 85°C
LTC3610IWP#PBF Linear Technology LTC3610 - 24V, 12A Monolithic Synchronous Step-Down DC/DC Converter; Package: QFN; Pins: 64; Temperature Range: -40°C to 85°C
LTM4601AIV#PBF-ES-WP Linear Technology LTM4601 - 12A DC/DC µModules with PLL, Output Tracking and Margining; Package: LGA; Pins: 133; Temperature: I
LTC3610EWP#PBF Linear Technology LTC3610 - 24V, 12A Monolithic Synchronous Step-Down DC/DC Converter; Package: QFN; Pins: 64; Temperature Range: -40°C to 85°C
LTC3610IWP#TRPBF Linear Technology LTC3610 - 24V, 12A Monolithic Synchronous Step-Down DC/DC Converter; Package: QFN; Pins: 64; Temperature Range: -40°C to 85°C

BUT12/12A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR but12

Abstract: No abstract text available
Text: transistors BUT 12; BUT 12A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , transistors BUT 12; BUT 12A CHARACTERISTICS T j = 25 °C unless otherwise specified. SYMBOL VcEOsusl , transistors BUT 12; BU T 12A A A n a a x o Fig.5 Transient thermal impedance. Fig.6 Test , diffused power transistors BUT 12; BUT 12A 1997 Aug 13 479 Philips Semiconductors Product , Product specification Silicon diffused power transistors BUT 12; B U T 12A vcc VCL = up to 1 0


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PDF O-220AB BUT12; BUT12A MBB008 MBK106 O-22QAB) BUT12 BUT12A TRANSISTOR but12
BUT12A

Abstract: No abstract text available
Text: transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VcEOsust BUT 12; BUT 12A , Semiconductors Product specification Silicon diffused power transistors BUT 12; BUT 12A 1997 Aug 13 , Product specification Silicon diffused power transistors BUT 12; BUT 12A 1997 Aug 13 681 , Semiconductors Product specification Silicon diffused power transistors BUT 12; BUT 12A vcc V CL =


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PDF T0-220AB BUT12; BUT12A BUT12 BUT12A
BUT12A

Abstract: BUT12
Text: . MAX 400 V IC=0.1A; IB=0, L=25mH 450 BUT12A BUT12 UNIT IC=6A; IB= 1.2A 1.5 1.5 BUT12A IC=6A; IB= 1.2A BUT12A V IC=5A; IB=1A BUT12 V IC=5A; IB=1A ICES , For BUT12 IC=6A; IB1=- IB2= 1.2A µs 0.8 µs SavantIC Semiconductor Product


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PDF BUT12 BUT12A O-220C BUT12 BUT12A
but12 transistor

Abstract: No abstract text available
Text: BUT12/ 12A HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage BUT12 BUT12A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( Tc=25'C) Junction Temperature Storage Temperature V ceo NPN SILICON TRANSISTOR Symbol BUT12 BUT12A VcES Rating 850 1000 400 450 8 20 4 100 150 -65 , = 1.2A lc = 6A, lB= 1.2A Vcc = 250V, le = 6A l01 = - l B 2 = 1.2A 495 ELECTRONICS


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PDF BUT12/12A BUT12 BUT12A BUT12A 300uS, 100mA, but12 transistor
Not Available

Abstract: No abstract text available
Text: BUT12/ 12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O , = 1.2A 1.5 V * Base E m itter S aturation Voltage VBE(sat) lc = 6A, lB= 1.2A 1.5 V toN V cc = 250V, lc = 6A 1 US S torage Tim e ts T G IB1 = - lB2 = 1-2A 4 US


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PDF BUT12/12A BUT12 300ns,
2000 - BUT12A

Abstract: BUT12
Text: BUT12/ 12A BUT12/ 12A High Voltage Power Switching Applications TO-220 1 1.Base 2 , Saturation Voltage IC = 6A, IB = 1.2A 1.5 VBE(sat) * Base-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V tON Turn ON Time 1 µs tSTG Storage Time 4 µs tF Fall Time VCC = 250V, IC = 6A IB1 = - IB2 = 1.2A RL = 41.6 0.8 µs * Pulsed Test: PW = , BUT12/ 12A Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 ­0.05


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PDF BUT12/12A O-220 BUT12 BUT12A BUT12A BUT12
2000 - BUT12

Abstract: No abstract text available
Text: BUT12/ 12A BUT12/ 12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A Collector , 9V, IC = 0 IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCC = 250V, IC = 6A IB1 = - IB2 = 1.2A RL = 41.6 Min , = 1.5% ©2000 Fairchild Semiconductor International Rev. A, February 2000 BUT12/ 12A


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PDF BUT12/12A O-220 BUT12 BUT12A BUT12
2001 - BUT12

Abstract: BUT12A
Text: BUT12/ 12A BUT12/ 12A High Voltage Power Switching Applications TO-220 1 1.Base 2 , Saturation Voltage IC = 6A, IB = 1.2A 1.5 VBE(sat) * Base-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V tON Turn On Time 1 µs tSTG Storage Time 4 µs tF Fall Time VCC = 250V, IC = 6A IB1 = - IB2 = 1.2A RL = 41.6 0.8 µs * Pulsed Test: PW = , / 12A Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 ­0.05 18.95MAX


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PDF BUT12/12A O-220 BUT12 BUT12A BUT12 BUT12A
BUT12A

Abstract: BUT12 PC100-W
Text: BUT12/ 12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Col lector Base Voltage : BUT12 Vces 850 V : BUT12A 1000 V , Iebo Vbe=9V, lc= 0 10 mA * Collector- Emitter Saturation Voltage VcE(sat) lc = 6A, lB= 1.2A 1.5 V * Base Emitter Saturation Voltage VBE(sat) lc = 6A, lB= 1.2A 1.5 V Turn On Time toN Vcc = 250V, lc = 6A 1 ns Storage Time tsTG IB1 = - lB2 = 1-2A 4 ns Fall Time tF 0.8 ns * Pulsed Test: PW =


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PDF BUT12/12A BUT12 BUT12A 100mA, 10perature 300ns, BUT12A PC100-W
PC based dc motor speed control

Abstract: BUT12 transistor but12
Text: ) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V ICES Collector Cutoff Current VCE=RatedVCES ;VBE= 0 , Time tf Fall Time 1.0 Turn-on Time isc Websitewww.iscsemi.cn IC= 6A; IB1= -IB2= 1.2A


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PDF BUT12 PC based dc motor speed control BUT12 transistor but12
BUT12

Abstract: No abstract text available
Text: mA mA V V \is \is \is VBE= 0 = 9V, lc = 0 V c E (s a t) lc= 6A , lB= 1.2A lc =6A , lB= 1 2A Vcc = 250V, lc = 6A IB1 = - I b2 = 1.2A VB E(sat) toN ts T G tF Rev. B FAIRCHILD S E M


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PDF BUT12/12 BUT12 UT12A UT12A BUT12
NPN Transistor TO220 vcc 150V

Abstract: BUT12 transistor IC 12A
Text: Diode forward voltage Fall time CONDITIONS VBE = 0V MIN Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2= 1.2A ,VCC=150V MAX 850 400 8 20 100 1.5 1.0 UNIT V V A A W V , VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 6.0A; IB = 1.2A IC = 6.0A; IB = 1.2A IC = 1.0A , =6A,IB1=-IB2= 1.2A ,VCC=150V Turn-off storage time Turn-off fall time IC=6A,IB1=-IB2= 1.2A ,VCC=150V Wing


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PDF BUT12 O-220 16KHz 100mA 16KHz NPN Transistor TO220 vcc 150V BUT12 transistor IC 12A
Not Available

Abstract: No abstract text available
Text: BUT12/ 12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Rating Unit 850 1000 V V 400 450 8 20 4 100 175 -6 5 ~ 1 7 5 V V A A A W °C "C Symbol VcES VcEO lc


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PDF BUT12/12A BUT12A BUT12 100mA,
2001 - pt 4115 led driver

Abstract: an7527 AN-7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 ML4425 NPN transistor 9013 npn
Text: BUT12/ 12A BUT12/ 12A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A , 9V, IC = 0 IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCC = 250V, IC = 6A IB1 = - IB2 = 1.2A RL = 41.6 Min , = 1.5% ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 BUT12/ 12A Package


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PDF BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver an7527 AN-7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 ML4425 NPN transistor 9013 npn
BUT12

Abstract: BUT12A BUT12AF BUT12F
Text: No file text available


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PDF BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) O-220 BUT12 BUT12A BUT12AF BUT12F
BUT12A

Abstract: BUT12 MGE246
Text: No file text available


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PDF BUT12; BUT12A O-22QAB O-220AB) O-220 O-220 BUT12 MGE246
buw13a philips semiconductor

Abstract: 180NS BUW12 BUT18F BUT18AF BUT18A BUT18 BUT12A BUS13 BUS12A
Text: -220AB 8A 850V 400V 1.5V at 6A/ 1.2A 80ns at 6A BUT12A 1000V 450V 1.5Vat5A/1A 80ns at 5A BUW12 SOT-93 8A 850V 400V 1.5V at 6A/ 1.2A 80ns at 6A BUW12A 1000V 450V 1.5Vat5A/1A 80ns at 5A BUS12 TO-3 8A 850V 400V 1.5V at 6A/ 1.2A 80ns at 6A BUS12A 1000V 450V 1.5Vat5A/1A 80ns at 5A BUW132 SOT-93 8A 850V 450V , 6A BUS22B 750V 400V 1.5V at 6 A/0.8 A BUS22C 850V 450V 1.5Vat6A/1A MJE13008 TO-220AB 12A


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PDF S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor BUW12 BUT18AF BUT18A BUT12A BUS13 BUS12A
L25-M

Abstract: l25m BUT 1 BUT12
Text: = 1 .2 A lc = 6A . le1 = l B2 = 1.2A mA mA V V mS VCE(sat) VBE(sat) ton ts fiS tf d uty


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PDF BUT12/12 O-220 100mA, L25-M l25m BUT 1 BUT12
Not Available

Abstract: No abstract text available
Text: 180ns at 4A 8A 850V 1000V 400V 450V 1,5V at 6A/ 1.2A 1.5V at 5A/1A 80ns at 6A 80ns a t 5A SOT-93 8A 850V 1000V 400V 450V 1.5V at 6A/ 1.2A 1 .5 V a t5 A /1 A 80ns at 6A 80ns at 5A TO-3 8A 850V 1000V 400V 450V 1.5V at 6A/ 1.2A 1 .5 V a t5 A /1 A 80ns at , at 6A/0.8A 1.5V at 6A /1A 40ns at 6A TO-220AB 12A 600V 700V 300V 400V 1 .5 V a , ) 6A BUT12 BUT12A T O -220AB BUW12 BUW 12A BUS12 BUS12A T Y P E NO. BUT18 BUT18A


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PDF 180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F
BU2506DF

Abstract: 1500v 02xs t199 5A 800V BU508
Text: .) Type No. BUT12 BUT12A BUW 12 BUW 12A BUW 12AF Package Outline TO-220AB SOT-93 SOT-199 SOT-186A SOT , 400V 450V 400V 450V 450V 850V 400V 450V 450V 450V max. at Iq/I b 1.5V at 6A/ 1.2A 1.5V at 5A/1 A 1.5V at 6A/ 1.2A 1.5V at 5A/1 A 1.5V at 5A 1V at 25A/0.5A 1.5V at 10A/2A 1.5V at 8A/1.5A 1.5V at 20A/4A , at at at at 6A 6A 6A 6A 2.5A 3A 3A 3A 3A 5A 5A 6A 8A 8A 8A 8A 8A 8A 8A 8A 8A 10A 10A 10A 10A 12A 12A 5V at 8A 5V at 8A 0.2|xs at 8A 0.2n.s at 8A Philips Components Discrete Sem iconductor


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PDF BUT12 BUT12A O-220AB OT-93 OT-199 OT-186A OT-227B1 OT-227B1 200ns BU2506DF 1500v 02xs t199 5A 800V BU508
buw13a philips semiconductor

Abstract: BUT22A BUT228 BUP23A SOT93 BUS12A BUS12 bus13 philips transistor loa sot SOT-93
Text: -220AB 8A 850V 1000V 400V 450V 1.5V at 6A/ 1.2A 1.5V at 5A/1A 80ns at 6A 80ns at 5A BUW12 BUW12A SOT-93 8A 850V 1000V 400V 450V 1.5V at 6A/ 1.2A 1.5Vat5A/1A 80ns at 6A 80ns at 5A BUS12 BUS12A TO-3 8A 850V 1000V 400V 450V 1.5V at 6A/ 1.2A 1.5V at 5A/1A 80ns at 6A 80ns at 5A BUW132 BUW132H BUW132A SOT-93 8A 850V , 1.5V at 6A/0.8A 1.5Vat6A/1A 40ns at 6A MJE13008 MJE13009 TO-220AB 12A 600V 700V 300V 400V 1.5Vat8A


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PDF bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUS12A BUS12 bus13 philips transistor loa sot SOT-93
BUT12

Abstract: BUT12A
Text: No file text available


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PDF BUT12; BUT12A O-22QAB O-220 O-220 BUT12 BUT12A
1997 - BUT12

Abstract: BUT12AF BUT12A BUT12F
Text: No file text available


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PDF BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 BUT12 BUT12AF BUT12A BUT12F
BUT12

Abstract: BUT12A BUT12A/B T0220AB
Text: No file text available


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PDF BUT12 BUT12A T0220 T0220AB. BUT12A BUT12A/B T0220AB
1997 - BUT12AF equivalent

Abstract: BUT12 BUT12A BUT12AF BUT12F
Text: No file text available


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PDF BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 BUT12AF equivalent BUT12 BUT12A BUT12AF BUT12F
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