The Datasheet Archive

BUT11F datasheet (12)

Part Manufacturer Description Type PDF
BUT11F Fairchild Semiconductor NPN Silicon Transistor Original PDF
BUT11F Fairchild Semiconductor NPN Silicon Transistor Original PDF
BUT11F Philips Semiconductors Silicon Diffused Power Transistor Original PDF
BUT11F Philips Semiconductors Silicon Diffused Power Transistor Original PDF
BUT11F Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BUT11F Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUT11F Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUT11FI Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUT11FI Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BUT11FI STMicroelectronics Shortform Data Book 1988 Scan PDF
BUT11FI STMicroelectronics High Voltage Switch Scan PDF
BUT11FTU Fairchild Semiconductor NPN Silicon Transistor Original PDF

BUT11F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BUT11AF

Abstract: BUT11F NPN VCEo 1000V BUT11Af equivalent
Text: SavantIC Semiconductor Product Specification BUT11F BUT11AF Silicon NPN Power Transistors , CONDITIONS BUT11F Emitter-base voltage BUT11AF BUT11F BUT11AF Open emitter Open base Open , Product Specification BUT11F BUT11AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , cut-off current CONDITIONS BUT11F MIN TYP. MAX 400 IC=0.1A; IB=0 V 450 BUT11AF BUT11F UNIT IC=3A; IB=0.6A 1.5 1.3 mA 10 mA IC=2.5A; IB=0.5A BUT11F V 1.0


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PDF BUT11F BUT11AF O-220Fa O-220Fa) BUT11F BUT11AF NPN VCEo 1000V BUT11Af equivalent
2001 - Not Available

Abstract: No abstract text available
Text: BUT11F /11AF BUT11F /11AF High Voltage Power Switching Applications TO-220F 1 NPN , otherwise noted Symbol VCBO Value Units : BUT11F : BUT11AF VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT11F : BUT11AF 400 450 V V Collector-Base Voltage , Symbol VCEO(sus) ICES Parameter * Collector-Emitter Sustaining Voltage : BUT11F : BUT11AF , Cut-off Current : BUT11F : BUT11AF VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 1 1 mA mA


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PDF BUT11F/11AF O-220F BUT11F BUT11AF
2000 - 11AF

Abstract: BUT11AF BUT11F
Text: Preliminary BUT11F /11AF BUT11F /11AF High Voltage Power Switching Applications TO-220F 1 , =25°C unless otherwise noted Symbol VCBO Value Units : BUT11F : BUT11AF VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT11F : BUT11AF 400 450 V V Collector-Base , otherwise noted Symbol VCEO(sus) ICES Parameter * Collector-Emitter Sustaining Voltage : BUT11F , Collector Cut-off Current : BUT11F : BUT11AF 1 1 VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 mA


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PDF BUT11F/11AF O-220F BUT11F BUT11AF 11AF BUT11AF BUT11F
BUT11AF

Abstract: but11 BUT11F BUT-11 PHILIPS BUT11AF
Text: specification Silicon diffused power transistors BUT11F /BUT11AF DESCRIPTION High-voltage, high-speed , VcESM collector-emitter voltage peak value; BUT11F VBE = 0 850 V BUT11AF 1000 V VcEO collector-emitter voltage open base BUT11F 400 V BUT11AF 450 V VcE« collector-emitter saturation voltage , saturation current BUT11F 3 A BUT11AF 2.5 A P« total power dissipation up to Th = 25 °C 20 W t , transistors BUT11F /BUT11AF LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL


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PDF GD264G7 BUT11F/BUT11AF OT186 BUT11F BUT11AF BUT11F MBC174 UBC667 BUT11AF but11 BUT-11 PHILIPS BUT11AF
BUT11AF

Abstract: BUT11 BUT11F ScansUX40
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT11F /BUT11AF , PARAMETER CONDITIONS MAX. UNIT VcESM collector-emitter voltage peak value; BUT11F VBE = 0 850 V BUT11AF 1000 V VcEO collector-emitter voltage open base BUT11F 400 V BUT11AF 450 V VcE sat , 'c sat collector saturation current BUT11F 3 A BUT11AF 2.5 A total power dissipation up to Th , Semiconductors. Philips Semiconductors Product specification Silicon diffused power transistors BUT11F /BUT11AF


OCR Scan
PDF BUT11F/BUT11AF OT186 BUT11F BUT11AF BUT11F mbc174 7110A5L) 711DflEb BUT11AF BUT11 ScansUX40
2001 - BUT11AF

Abstract: transistor VCBO 1000V IC 100mA 11AF BUT11F
Text: Preliminary BUT11F /11AF BUT11F /11AF High Voltage Power Switching Applications TO-220F 1 , =25°C unless otherwise noted Symbol VCBO Value Units : BUT11F : BUT11AF VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT11F : BUT11AF 400 450 V V Collector-Base , otherwise noted Symbol VCEO(sus) ICES Parameter * Collector-Emitter Sustaining Voltage : BUT11F , Collector Cut-off Current : BUT11F : BUT11AF 1 1 VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 mA


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PDF BUT11F/11AF O-220F BUT11F BUT11AF BUT11AF transistor VCBO 1000V IC 100mA 11AF BUT11F
2001 - 11AF

Abstract: BUT11AF BUT11F
Text: BUT11F /11AF BUT11F /11AF High Voltage Power Switching Applications TO-220F 1 NPN , otherwise noted Symbol VCBO Value Units : BUT11F : BUT11AF VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT11F : BUT11AF 400 450 V V Collector-Base Voltage , Symbol VCEO(sus) ICES Parameter * Collector-Emitter Sustaining Voltage : BUT11F : BUT11AF , Cut-off Current : BUT11F : BUT11AF 1 1 VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 mA mA


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PDF BUT11F/11AF O-220F BUT11F BUT11AF 150ner 11AF BUT11AF BUT11F
2001 - BUT11AF

Abstract: an7511 BUT11AFTU
Text: BUT11F /11AF BUT11F /11AF High Voltage Power Switching Applications 1 TO-220F 2.Collector 3 , Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : BUT11AF Emitter-Base Voltage , : BUT11F : BUT11AF Collector Cut-off Current : BUT11F : BUT11AF IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BUT11F : BUT11AF Base-Emitter Saturation Voltage : BUT11F : BUT11AF Turn On , Semiconductor Corporation BUT11F /11AF Typical Characteristics 1000 10 100 VCE(sat)[V], SATURATION


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PDF BUT11F/11AF O-220F BUT11F BUT11AF BUT11AFTU O-220F an7511
Not Available

Abstract: No abstract text available
Text: specification Silicon diffused power transistors BUT11F /BUT11AF QUICK REFERENCE DATA , ; BUT11F VcESM O II L U (D > High-voltage, high-speed, glass-passivated npn power , collector-emitter voltage open base PINNING BUT11F Vce - PIN DESCRIPTION 400 V BUT11AF , 2 base BUT11F 1 2.5 A 20 W 0.8 M S Ml emitter collector , DQEflMQfl 0b4 « A P X Product specification Philips Semiconductors BUT11F /BUT11AF Silicon


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PDF 0Q264Q7 BUT11F/BUT11AF BUT11F BUT11AF 11F/BUT11AF
1997 - BUT11AX

Abstract: BUT11F
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F , Silicon Diffused Power Transistor BUT11F STATIC CHARACTERISTICS Ths = 25 °C unless otherwise , Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F VCC , Transistor 100 h FE BUT11F BUT11AX 100 IC / A 5V = 0.01 ICM max 1V 10 10 , Product specification Silicon Diffused Power Transistor BUT11F Fig.11. Typical base-emitter and


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PDF BUT11F OT186 BUT11AX BUT11F
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope , Semiconductors Product specification Silicon Diffused Power Transistor BUT11F STATIC CHARACTERISTICS , Power Transistor BUT11F ? VCC VIM 0- jy t r * (pi TUT. I' .! T F/gf , Silicon Diffused Power Transistor BUT11F too IC I A 0.01 1 10 100 1000 V CE/V


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PDF BUT11F OT186
BUT11F

Abstract: DSA002309 silicon transistor npn 395 BUT11
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11F · DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 , isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11F


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PDF BUT11F BUT11F DSA002309 silicon transistor npn 395 BUT11
transistor 468

Abstract: ESM 467
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT 186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VcESM VcEO PARAMETER , Semiconductors Product specification Silicon Diffused Power Transistor BUT11F ? vcc m % T.U.T


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PDF BUT11F 100Cl transistor 468 ESM 467
2010 - but46a

Abstract: PEC730
Text: SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF


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PDF OT430 OT431 2N5241 OTS431 STA9364 STS430 but46a PEC730
BU25150X

Abstract: BU2508-AX BU1508DX BU1508AX BU2708AX BUT12AF BU2708DX BU2725DX BUS08D BU2720DX
Text: BU2727AW BU2727AX BU2730AL BUJ403A BUJ403AX BUT 11 BUT11A BUT11AF BUT11AI BUT11AX BUT11F BUT11XI BUT12


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PDF BU505 BU505D BU505DF BU505F BU506 BU506D BU506DF BU506F BU508AF BU508AW BU25150X BU2508-AX BU1508DX BU1508AX BU2708AX BUT12AF BU2708DX BU2725DX BUS08D BU2720DX
BUS11A PHILIPS SEMICONDUCTOR

Abstract: No abstract text available
Text: BUT11F BUT11AF SOT-186 (F-PAK) 5A 850V 1000V 400V 450V 1.5V at 3A /0.6A 1.5V at 2.5A


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PDF Q01b22Q 32-0t OT-93 BUV90 BUV90F OT-199 ESM3045AV 3045DV ESM4045AV BUS11A PHILIPS SEMICONDUCTOR
ESM40

Abstract: BUT21A 10a 1000v to220a bux86 philips semiconductor ESM6045DV ESM4045DV DIODE 3A 1000V SOT93 diode 6A 1000v 1000v 3a diode
Text: /0.6A 80ns at 3A BUT11A 1000V 450V 1.5Vat2.5A/0.5A 80ns at 2.5A BUT11F SOT-186 5A 850V 400V 1.5V at


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PDF bk53i31 QCUb220 T-32-OI BU826 OT-93 BU826A BUV90 BUV90F OT-199 ESM40 BUT21A 10a 1000v to220a bux86 philips semiconductor ESM6045DV ESM4045DV DIODE 3A 1000V SOT93 diode 6A 1000v 1000v 3a diode
BU2508-AX

Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4506DF BU4508DF BU4508DX BU4508AF BU2725DX BU2506DX BU4525AX
Text: 629 633 638 643 643 TYPE NUMBER BUT11AF BUT11AI BUT11AX BUT11APX BUT11F BUT12A BUT12AI BUT18A


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PDF BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF BU508AF BU508AW BU2508-AX BU506D, BU1506DX, BU2506DF BU2506DF BU4506DF BU4508DF BU4508DX BU4508AF BU2725DX BU2506DX BU4525AX
BUT11AX

Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
Text: 700 700 max. (A) 0.5 2 2 2 5 5 5 5 5 6 type number BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F


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PDF BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F BUT11 BUT211 BUW11 BUT18 BUT11AX TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
diode 1000V 10a

Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Text: BUT11 BUT11A BUT11F BUT11AF BUW11 BUW 11A BUT211 BUT18 BUT18A BUT18F BUT18AF Package Outline TO-126 TO


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PDF O-220AB O-220AB 750ns BU407 BUV28 BUV28A BUV27 BUV27A diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
diode 400V 4A

Abstract: DIODE 3A 1000V BUT21A Diode 400V 5A ESM5045DV BUX86 1000v 3a diode ESM3045AV diode 400V 6A ESM3045DV
Text: 850V 1000V 400V 450V 1.5V at 3A/0.6A 1.5Vat2.5A/0.5A 80ns at 3A 80ns at 2.5A BUT11F BUT11AF SOT


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PDF BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A Diode 400V 5A ESM5045DV BUX86 1000v 3a diode diode 400V 6A
BUT11APX equivalent

Abstract: BUT11A1 equivalent BU2725DX BUT11APX BU506D, BU1506DX, BU2506DF BU2527 BU2506DF equivalent BU4522AX bu2520dx BU2527DX
Text: BUT11F L1 BUJ205AX L1 BUT12F L1 BUW13F L1 BUX87P L1 BUJ301A BUW85 BUX85


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PDF O220AB) OT186 BU505 BU505D OT199 OT399 OT429 OT430 BU505F BU505DF BUT11APX equivalent BUT11A1 equivalent BU2725DX BUT11APX BU506D, BU1506DX, BU2506DF BU2527 BU2506DF equivalent BU4522AX bu2520dx BU2527DX
BUT11A1

Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU2532 BU4506AF BU2720DX BU4506AX BU2527
Text: BU1706AB BUT18AF BUT11AF BUJ303AX BUT11APX BUJ304AX BUX85F BUT11AX BUW11AF BUJ301AX BUT11F BUJ205AX


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PDF S0T82 S0T78 T0220AB) BU505 BU505D BU506 BU506D S0T186A S0T186 BU505F BUT11A1 Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU2532 BU4506AF BU2720DX BU4506AX BU2527
2002 - KSC5027

Abstract: KSC5345 power BJT KSE13009 KSC2518 KSC2335 FJN13003 KSA1156 BUT11 KSE13007 equivalent
Text: 2.5 1 KSE13005F 400 700 9 4 30 10 60 1 - 0.5 4 0.9 BUT11F


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PDF O-126 KSC2752 KSC5026M KSA1156 O-220 KSE13006 KSE13008 KSC2333 KSC5024 KSC5027 KSC5345 power BJT KSE13009 KSC2518 KSC2335 FJN13003 KSA1156 BUT11 KSE13007 equivalent
SOT399

Abstract: BU2720DX BU2708AX BU2708DX BU2720AX BU1507AX BU2725DX BU2515DX BU2532
Text: BUX84 BUW84 BUT211X BUT11F BUW11F BUT211 BUT11 BUW11W BUT18F BUT18 BUT12F BUW12F BUT12 BUW12W BUW13F


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PDF BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F BUW11F BUT211 BUT11 BUW11W SOT399 BU2720DX BU2708AX BU2708DX BU2720AX BU1507AX BU2725DX BU2515DX BU2532
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