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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

BUT 11 Transistor Datasheets Context Search

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2008 - w32 transistor

Abstract: w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
Text: 10 11 12 13 D2 D3 D4 D5/INT CNVSS XCIN/D6 XCOUT/D7 RESET XOUT VSS XIN VDD C/CNTR 1 , Group) The bit has no function, but Read/Write is enabled. Interrupt control register V1 V13 , function, but Read/Write is enabled. The bit has no function, but Read/Write is enabled. (The same as 455A Group) The bit has no function, but Read/Write is enabled. Interrupt disabled (SNZT3 , 0 1 0 1 W51 W50 00 01 10 11 LCD control register L1 L13 L12 L11 L10 PA0


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PDF M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
2000 - siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ VMP4 IRF540 mosfet with maximum VDS 30 V Class E amplifier IRF510 SEC mosfet
Text: Class-E, with about 1.6 times as much output power per transistor , but with the possible disadvantage , output transistor during turn-off switching, but greater power consumption of the driver stage. For , the transistor operates as an on/off switch and the load network shapes the voltage and current waveforms to prevent simultaneous high voltage and high current in the transistor ; that minimizes power , transistor performs well at frequencies up to about 70% of its frequency of good Class-B operation (an


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PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ VMP4 IRF540 mosfet with maximum VDS 30 V Class E amplifier IRF510 SEC mosfet
telefunken ta 400

Abstract: but46 sot-23 npn marking code cr
Text: time Fall time w ith a n tisa tu ra tio n c irc u itry Storage time Fall time Fig. 11 Fig. 11 BUT 46 , fi^GCHb 0001513 AL6G BUT 46 - BUT 46 A r - 2 3 - 1 3 Silicon NPN Power Switching Transistors , resistance Junction case Tt,2/1685.0888 E ·to 'BM C ES BUT 46 ^CEO EBO 'CM BUT 46 A 1000 450 7 10 5 4 , TELEFUNKEN ELECTRONIC 17E D öHEOG^b OOO^Slb 3 AL 66 `T-33-13 BUT 46 · BUT 46 A Characteristics , , VCE = 850 V 1000 V BUT 46 BUT 46 A BUT 46 BUT 46 A Min. Typ. Max. 'CES 'CES 1 1 2 2 400


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PDF 15A3DIN E--07 telefunken ta 400 but46 sot-23 npn marking code cr
2005 - LED DRIVER BY MC34063

Abstract: schematic diagram mc34063 constant current led MC34063 5v MC34063 driver led mc34063 MC34063 application mc34063 pwm led MC34063 Application Notes mc34063 pwm mc34063 flyback
Text: . With built- in switch transistor , the MC34063 can switch up to 1.5 A current. But for higher output , 1.1 Fig. 8 Conversion efficiency with internal transistor for different output current (Vin = 6 V , transistor decrease while the duty cycle of the MEGA Schottky rectifier increases. But for the voltage range , switching loss of BISS transistor PQ = IC× VEC VEC VE VC Vout IC Fig. 11 Example of switching , the best efficiency performance of bipolar transistor and diodes, Philips Semiconductors has


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PDF AN10360 MC34063, PBSS5320T, PMEG2020EJ LED DRIVER BY MC34063 schematic diagram mc34063 constant current led MC34063 5v MC34063 driver led mc34063 MC34063 application mc34063 pwm led MC34063 Application Notes mc34063 pwm mc34063 flyback
2011 - pin configuration of transistor 2n2222

Abstract: pin configuration transistor 2N2222
Text: comparator with a wide input supply range of a single 3V to ±18V. The floating output transistor with 50mA , GND +INPUT -INPUT NC V10 9 8 7 6 V+ OUTPUT NC BALANCE/STROBE BALANCE 1 Rev. D 3/ 11 ABSOLUTE , Guaranteed by design but not tested. Typical parameters are representative of actual device performance but , Rev. D 3/ 11 APPLICATION NOTES OFFSET BALANCING The input offset voltage of the MSK 120RH can be , . STROBING THE OUTPUT The output transistor of the MSK 120RH can be forced off causing the output pin


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PDF MIL-PRF-38534 120RH RH1011 MIL-PRF-38535 120RH MSK120 pin configuration of transistor 2n2222 pin configuration transistor 2N2222
2008 - zeltex

Abstract: transistor E304 application of chopper amplifier load cell amplifier 2n3565 equivalent transistor 6AQ5 tube Zeltex device Thermopile DExter 1M 2N4248 CS3002
Text: noise performance. Figure 6 illustrates a noise plot for a hypothetical but typical MOS transistor , AN300 CS3001/2/ 11 /12 & CS3003/4/13/14 Chopper-stabilized Operational Amplifiers Jerome E , how it can be applied in various measurement applications. But before the applications are discussed , amplifier portion of the Zeltex device. This amplifier was constructed with a matched bipolar transistor , actual chopper amplifier portion of the Zeltex amplifier. The amplifier AC gain is about 3000, but


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PDF AN300 CS3001/2/11/12 CS3003/4/13/14 AN300REV1 zeltex transistor E304 application of chopper amplifier load cell amplifier 2n3565 equivalent transistor 6AQ5 tube Zeltex device Thermopile DExter 1M 2N4248 CS3002
1994 - transistor j326

Abstract: AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
Text: in a RF transistor . This is to some degree offset by a larger die size but doubling the output , R. A. Gilson, "Broad­band Microwave Class­C Transistor Amplifiers", IEEE Trans. MTT­21, no. 11 , pp , its advantages over a conventionally matched 800 MHz transistor . Also described will be the , stages with a single device or at least with fewer paralleled transistors. But increasing the output power of current 800 MHz transistors does present a number of problems: larger transistor die would


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PDF AN1530/D AN1530 transistor j326 AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
2000 - TDA 16846 P

Abstract: tda 2750 tda 4605 application note TDA 1031 K2k transistor transistor Siemens 14 S S 92 IC tda 16846 TDA 1060 f TDA4605 Siemens LOGO 24
Text: transistor gets a higher gate voltage. But also the charging time for the supply capacitor becomes longer , switching losses. But this can produce also higher RF noise. RF spikes which come into pin 11 of TDA 16846 , power dissipation. But the following notes should be respected: Gate threshold voltage: The gate , control chip is high enough to produce a sufficient high gate voltage. But during startup the supply , /47: 8 V). So also the gate voltage of the MOS FET reaches a minimum. The CoolMOSTM transistor can


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PDF 16846x PostScript-Druc90 Room14J1 Room1101 TDA 16846 P tda 2750 tda 4605 application note TDA 1031 K2k transistor transistor Siemens 14 S S 92 IC tda 16846 TDA 1060 f TDA4605 Siemens LOGO 24
1995 - DS3654

Abstract: a2917 ds75461 58603 IR2159 DS75451 DS3687 DS3686 DS3631 DS75
Text: mA output transistor Figure 2 shows the characteristics of the output transistor when it is ON and when it is OFF The output transistor is capable of sinking more than one amp of current when it is ON and is specified at a VOL e 0 7V at 300 mA The output transistor is also specified to operate with voltages up to 30V without breaking down but there is more to that as shown by the breakdown voltages , Driver DS75451 BVCES corresponds to the breakdown voltage when the output transistor is held off by the


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2000 - 68HC12

Abstract: 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990
Text: transistor . The same is also true for nonvolatile memories but the means of achieving these states is , performed by the gate of a CMOS transistor , as described for the ROM bitcell, but it also performs some , . Finally, EEPROM represents a similar but unique NVM category and an explanation of the basic operation , products are sometimes packaged in a conventional plastic package which allows programming of the die but , require values to be permanently stored but yet updated on an ongoing basis in the application. As a


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PDF AN1837/D AN1837 68HC12 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990
1995 - how to convert 220v ac to 12v dc

Abstract: 12v dc to 230v ac CONVERTERS SIMPLE CIRCUITS convert 230V AC to 5V DC without transformer transformer winding formula 220v Ac to 12v Dc convert 230v ac to 5v dc without using transformer 500w two transistor forward converter 500w Full bridge transformer 230V ac to 110V dc converter circuit transformer from 230V AC to 5V DC 230v 50 Hz CENTER TAP transformer
Text: power supply Most of this equipment requires not only DC voltage but voltage that is also well , has its own area of use but this paper will only deal with the first two which are the most commonly , capacitor C1 The bridge rectifier circuit has a simple transformer but current must flow through two , sensed that the output voltage Vo is too low turns on the pass transistor to build up current in L , the pass transistor Q which forces the current to free wheel around the path consisting of L C and


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2000 - 68HC12

Abstract: 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola transistor cross reference
Text: relates to the data state of the transistor . The same is also true for nonvolatile memories but the means , possibility for a half transistor may seem odd, if not impossible, but in actuality indicates the , with definitions is included. Finally, EEPROM represents a similar but unique NVM category and an , allows programming of the die but without the window to expose the surface. The unit cannot be erased , reprogrammed, it is well suited to applications that require values to be permanently stored but yet updated


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PDF AN1837/D AN1837 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola transistor cross reference
2000 - two transistor forward

Abstract: siemens RC snubber smps transformer Design half bridge smps transformer design PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES full bridge smps basic 24 volt output smps design Single phase half wave bridge converter AN-CoolMOS-02 resonant single ended forward converter
Text: , 600V 500V, 600V Table 1: SMPS Topologies & Transistor Selection 1.1 Flyback Converter The , .3 1.1 Flyback Converter , ) .4 1.3 Single Transistor Forward Converter , .6 1.5 Two Transistor Forward Converter , Cúk and SEPIC using multiple reactive components for energy transfer, but with operating


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PDF AN-CoolMOS-08 Room14J1 Room1101 two transistor forward siemens RC snubber smps transformer Design half bridge smps transformer design PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES full bridge smps basic 24 volt output smps design Single phase half wave bridge converter AN-CoolMOS-02 resonant single ended forward converter
1999 - 7805 voltage regulator IC function

Abstract: 7805 voltage regulator IC TRANSISTOR regulator LM317* voltage regulator as current source lm396 high voltage regulator 7805 5V REGULATOR IC REGULATOR IC AN 7805 operation of 7805 regulator 7805 voltage regulator 3v 7805 5V REGULATOR IC application
Text: regulator configured as a "post regulator" for a switching power Ground Figure 1-1 . A basic linear regulator schematic. A typical linear regulator diagram is shown in Figure 1-1 . A pass transistor is , continuously with the reaction time limited only by the speed of the op amp and output transistor loop. Real , Semiconductor supply. Switching supplies are known for excellent efficiency, but their output is noisy; ripple , current. This parameter is sometimes called quiescent current, but this usage is incorrect for PNP-pass


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PDF MIC5200 MIC5203 MIC5201 MIC2920 MIC5156/7/8 MIC29150 MIC29300 MIC29500 MIC29750 LT1086 7805 voltage regulator IC function 7805 voltage regulator IC TRANSISTOR regulator LM317* voltage regulator as current source lm396 high voltage regulator 7805 5V REGULATOR IC REGULATOR IC AN 7805 operation of 7805 regulator 7805 voltage regulator 3v 7805 5V REGULATOR IC application
2004 - disadvantages 68hc12

Abstract: 68HC3xx flash "high temperature data retention" mechanism 68HC12 68HC16 AN1837 M68HC08 M68HC12
Text: relates to the data state of the transistor . The same is also true for nonvolatile memories but the means , included. Finally, EEPROM represents a similar but unique NVM category and an explanation of the basic , products are sometimes packaged in a conventional plastic package which allows programming of the die but , that require values to be permanently stored but yet updated on an ongoing basis in the application , more detailed description of the program and erase operations is provided later but these operations


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PDF AN1837/D AN1837 disadvantages 68hc12 68HC3xx flash "high temperature data retention" mechanism 68HC12 68HC16 AN1837 M68HC08 M68HC12
2000 - motorola transistor cross reference

Abstract: 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola application note
Text: transistor . The same is also true for nonvolatile memories but the means of achieving these states is , performed by the gate of a CMOS transistor , as described for the ROM bitcell, but it also performs some , with definitions is included. Finally, EEPROM represents a similar but unique NVM category and an , products are sometimes packaged in a conventional plastic package which allows programming of the die but , require values to be permanently stored but yet updated on an ongoing basis in the application. As a


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PDF AN1837/D AN1837 motorola transistor cross reference 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola application note
2000 - T2AL

Abstract: txal IRF9Z34 circuit diagram of stepper IRFZ34 NJM3776 NJM3776D2 t1al
Text: Suitable to drive any external MOS FET or bipolar power transistor · Cross conduction prevented by time , NJM 3776D2 19 VBB 2 18 SGND 17 VR 2 2 16 C 2 15 Phase Dis 1 11 14 Dis RC , 10 11 Phase1 Dis1 12 RC 13 14 Vcc Dis2 15 16 Phase2 C2 17 VR2 18 , lower transistor . The pin will sink current when phase is high. Output, channel 1, B side upper transistor . The pin will source current when phase is low. Output, channel 1, A side lower transistor . The


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PDF NJM3776 NJM3776 T2AL txal IRF9Z34 circuit diagram of stepper IRFZ34 NJM3776D2 t1al
phototransistor spice model

Abstract: pnp phototransistor optocoupler, spice model, resistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model optocoupler basics 2N3904 TRANSISTOR using darlington amplifier optocoupler spice
Text: . Some of the higher-speed applications require specialized but widely available "high-speed" couplers , single transistor coupler. This "photo diode" configuration can be schematically considered as the diode , appropriate will be discussed later on. Document Number: 83590 Rev. 1.4, 11 -Feb-08 2. RBE resistor value 3. Phototransistor current gain (hFE) 4. Transistor junction capacitance 5. CC vs. CE , collector capacitance). But CBC will decrease with increasing VCB, as illustrated in figure 6. Thus, as we


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PDF 11-Feb-08 phototransistor spice model pnp phototransistor optocoupler, spice model, resistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model optocoupler basics 2N3904 TRANSISTOR using darlington amplifier optocoupler spice
2012 - Not Available

Abstract: No abstract text available
Text: high-supply requires nominal 3.3 V. • An external ballast transistor is used to reduce dissipation capacity at high temperature but an embedded transistor can be used if power dissipation is maintained , Freescale Semiconductor Application Note Document Number:AN4623 Rev. 0, 11 /2012 MPC5643L , regulator driving an external NPN bipolar transistor (emitter-follower configuration) or an internal pMOSFET. The PMU always starts up using the internal ballast transistor . It then executes an automatic


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PDF AN4623 MPC5643L e200z4
1999 - car inverter theory

Abstract: baxandall chopper transformer winding formula 2N1552 sterling inverter diagrams 3 phase inverter 120 conduction mode theory 2N3612 scr 106B 2N2527 12VOLT SCR DIAGRAMS
Text: improves transistor turn off - especially if a speed-up capacitor is used across RB 7 - but losses in , (c) common inverter. SPEED-UP CIRCUITS FOR TRANSISTOR INVERTERS. 11 Common-col , each transistor , but thes? arrangements slow transistor switching. E the transistors will not , results in dc to dc conversion. Transistor inverters as described herein are, therefore, the "heart>' , nonsaturated, magnetization qN#~entj$ lm (=H~/N1 ) is small, but as saturation (po@#$)'$&Y# approached high


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PDF AN-222 2N651 115-VOLT AN222 car inverter theory baxandall chopper transformer winding formula 2N1552 sterling inverter diagrams 3 phase inverter 120 conduction mode theory 2N3612 scr 106B 2N2527 12VOLT SCR DIAGRAMS
2009 - cfl low loss drive

Abstract: phe13009 transistor BUJ100 PHE13007 BUJ100 DIMMER high power bipolar transistor selection BUJ105A transistor BUT High power planar Transformer
Text: base current) causes too much stored charge in the transistor when it's in the on-state. As long as the transistor is conducting, that's not a problem, but when the transistor has to be turned off, the , losses. The base drive is normally optimized for a `typical' transistor ­ that is, a transistor from , . All charge stored in the junction when the transistor is conducting should be removed again at , longer storage time leads to a longer delay and a lower frequency. As a result, transistor storage time


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PDF vol92 OT186A O220AB OT428) cfl low loss drive phe13009 transistor BUJ100 PHE13007 BUJ100 DIMMER high power bipolar transistor selection BUJ105A transistor BUT High power planar Transformer
2002 - intel 845 motherboard schematic diagram

Abstract: 18E-02 schematic diagram 48 volt UPS INTEL 845 MOTHERBOARD CIRCUIT diagram 845 chipset motherboard schematic diagram 845 motherboard schematic intel 845 MOTHERBOARD schematic TVC 2 HB JESD22-A115 GTL2000DL-T
Text: voltage will vary from part to part but will not vary within a package. The reference transistor , Translation The channel pass transistors are constructed such that the gate of the reference transistor (GREF , that use internal drivers to control the gate of the NMOS pass transistor , the gate pin of the GTL-TVC devices is directly connected to the gate of each transistor . In principle the GTL-TVC devices can be , the reference transistor (GREF), drain of the reference transistor (DREF) and source of the reference


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PDF AN10145-01 GTL2000, GTL2002, GTL2010 GTL2000/02/10 intel 845 motherboard schematic diagram 18E-02 schematic diagram 48 volt UPS INTEL 845 MOTHERBOARD CIRCUIT diagram 845 chipset motherboard schematic diagram 845 motherboard schematic intel 845 MOTHERBOARD schematic TVC 2 HB JESD22-A115 GTL2000DL-T
2002 - schematic diagram 48 volt UPS

Abstract: INTEL 845 MOTHERBOARD CIRCUIT diagram intel 845 motherboard schematic diagram intel 845 MOTHERBOARD schematic 18E-02 GTL2002 GTL2000DL-T JESD22-A114 JESD22-A115 GTL2000DGG
Text: voltage will vary from part to part but will not vary within a package. The reference transistor , Translation The channel pass transistors are constructed such that the gate of the reference transistor (GREF , that use internal drivers to control the gate of the NMOS pass transistor , the gate pin of the GTL-TVC devices is directly connected to the gate of each transistor . In principle the GTL-TVC devices can be , the reference transistor (GREF), drain of the reference transistor (DREF) and source of the reference


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PDF AN10145-01 GTL2000, GTL2002, GTL2010 GTL2000/02/10 schematic diagram 48 volt UPS INTEL 845 MOTHERBOARD CIRCUIT diagram intel 845 motherboard schematic diagram intel 845 MOTHERBOARD schematic 18E-02 GTL2002 GTL2000DL-T JESD22-A114 JESD22-A115 GTL2000DGG
td6202

Abstract: diagram TD62304ap td62003ap TD6202AP 14D34 TD62082AP TD62001 td62703p td62506p Seven Transistor Array PNP
Text: Examples 1. Product Description 1.1 Transistor Array/Interface Drivers Transistor arrays and , each required application. 1.2 Basic Darlington Transistor Circuits The basic circuit for Darlington transistors, most commonly used in transistor arrays and interface drivers, is shown in Figure 1.1 . Because of the dual structure of the Darlington transistor , an extremely high Common hFE , to switch the latter transistor 's Tr2 ON must be added to the R2 VBE2 R3 VCE (sat) 1


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PDF TB62600F 64-bit td6202 diagram TD62304ap td62003ap TD6202AP 14D34 TD62082AP TD62001 td62703p td62506p Seven Transistor Array PNP
Not Available

Abstract: No abstract text available
Text: – Low Resistance Pass Transistor : 0.25£2 ■Dropout Voltage: 0.75V at 3A ■± % Reference Voltage , saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an , . -55°C to 150°C Power Transistor Section LT1185C. 0°C to 150 , External Current Limit Programming Constant 5k < R|_im < 15k, V out = 1V (Note 11 ) MIN External , Power Transistor 3 °C/W T0-220 Control Area 1 °C/W Power Transistor 3 °C/W


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PDF LT1120A LT1129 200mA 400mV LT1175 500mA LT1585
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