BUK9610-55A |
|
NXP Semiconductors
|
BUK9610-55A - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 28 nC; RDS(on): 9@10V10@5V11@4.5V mOhm; Thermal Resistance: 0.75 K/W; VDSmax: 55 V |
|
Original |
PDF
|
BUK9610-55A |
|
Philips Semiconductors
|
TrenchMOS logic level FET |
|
Original |
PDF
|
BUK9610-55A,118 |
|
NXP Semiconductors
|
BUK9610 - TRANSISTOR 100 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
|
Original |
PDF
|
BUK9610-55A,118 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 28 nC; RDS(on): 9@10V10@5V11@4.5V mOhm; Thermal Resistance: 0.75 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
|
Original |
PDF
|
BUK9610-55A/T3 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 28 nC; RDS(on): 9@10V10@5V11@4.5V mOhm; Thermal Resistance: 0.75 K/W; VDSmax: 55 V |
|
Original |
PDF
|