BUK96 |
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Philips Semiconductors
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TrenchMOS logic level FET |
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BUK96 |
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Philips Semiconductors
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TrenchMOS logic level FET |
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BUK9604-40A |
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NXP Semiconductors
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BUK9604-40A - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 56 nC; RDS(on): 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 40 V |
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BUK9604-40A |
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Philips Semiconductors
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BUK9604-40A,118 |
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 56 nC; RDS(on): 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 40 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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BUK9604-40A,118 |
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NXP Semiconductors
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BUK9604 - TRANSISTOR 198 A, 40 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power |
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BUK9604-40A/T3 |
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 56 nC; RDS(on): 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 40 V |
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BUK9605-30A |
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NXP Semiconductors
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BUK9605-30A - TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 4.6@10V5@5V5.4@4.5V mOhm; Thermal Resistance: 0.65 K/W; VDSmax: 30 V |
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BUK9605-30A |
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Philips Semiconductors
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TrenchMOS Transistor Logic Level FET |
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PDF
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BUK9605-30A,118 |
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NXP Semiconductors
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BUK9605 - TRANSISTOR 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power |
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BUK9605-30A,118 |
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NXP Semiconductors
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TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 4.6@10V5@5V5.4@4.5V mOhm; Thermal Resistance: 0.65 K/W; VDSmax: 30 V; Package: week 1, 2005 |
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BUK9605-30A/T3 |
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NXP Semiconductors
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TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 4.6@10V5@5V5.4@4.5V mOhm; Thermal Resistance: 0.65 K/W; VDSmax: 30 V |
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BUK960530AT3 |
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Philips Semiconductors
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TrenchMOS transistor Logic level FET |
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BUK9606-30 |
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Philips Semiconductors
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TrenchMOS transistor Logic level FET |
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BUK9606-40B |
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NXP Semiconductors
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BUK9606-40B - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): 5@10V6.4@5V7.1@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V |
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BUK9606-40B |
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Philips Semiconductors
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TrenchMOS logic level FET |
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Original |
PDF
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BUK9606-40B,118 |
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NXP Semiconductors
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BUK9606-40 - TRANSISTOR 75 A, 40 V, 0.0071 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
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BUK9606-40B,118 |
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): 5@10V6.4@5V7.1@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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BUK9606-40B/T3 |
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): 5@10V6.4@5V7.1@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V |
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BUK9606-55A |
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NXP Semiconductors
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BUK9606-55A - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 55 V |
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