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SN74ABT16500BDGGR Texas Instruments 18-Bit Universal Bus Transceivers With 3-State Outputs 56-TSSOP -40 to 85
SN74ABT16500BDLG4 Texas Instruments 18-Bit Universal Bus Transceivers With 3-State Outputs 56-SSOP -40 to 85
SN74ABT16500BDL Texas Instruments 18-Bit Universal Bus Transceivers With 3-State Outputs 56-SSOP -40 to 85
SN74ABT16500BDLR Texas Instruments 18-Bit Universal Bus Transceivers With 3-State Outputs 56-SSOP -40 to 85
SNJ54ABT16500BWD Texas Instruments ABT SERIES, 18-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, DFP56
SN54ABT16500BWD Texas Instruments ABT SERIES, 18-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, CDFP56, 0.380 INCH, CERAMIC, FP-56

BUK655-500B datasheet (4)

Part Manufacturer Description Type PDF
BUK655-500B Philips Semiconductors PowerMOS Transistor Fast Recovery Diode FET Original PDF
BUK655-500B Others Shortform Datasheet & Cross References Data Scan PDF
BUK655-500B Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUK655-500B Philips Semiconductors PowerMOS transistor Fast recovery diode FET Scan PDF

BUK655-500B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: Recovery Diode FET BUK655-500A BUK655-500B BUK655-500C T -3 7 -/ 3 GENERAL d e s c r ip t io n , D ^53=131 OOSOtiTti 1 BUK655-500A BUK655-500B BUK655-500C PowerMOS transistor Fast , V g s = ± 30V;V d s = 0 V V q s = 10 V; BUK655-500A lD = 2.5 A BUK655-500B BUK655-500C 2.1 , -500A BUK655-500B BUK655-500C T— 13 39— REVERSE DIODE RATINGS AND CHARACTERISTICS Tm = 25 'C unless , transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655-500C Fig.6. 1 Typical output


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PDF bbS3T31 BUK655-500A BUK655-500B BUK655-500C BUK655
Not Available

Abstract: No abstract text available
Text: characteristics simplify design for inductive loads. PINNING - T0220AB PIN TTÖ ■P H I N BUK655-500B , Fast recovery diode FET BUK655-500B STATIC CHARACTERISTICS Tm = 25 'C unless otherwise specified , Specification PowerMOS transistor Fast recovery diode FET BUK655-500B PD% „ ■™1 /w . « 1 , » P H I N Product Specification PowerMOS transistor Fast recovery diode FET BUK655-500B , BUK655-500B VSDS/V Fig. 14. Typical reverse diode current. IF = f(Vsns); conditions: VGS= 0 V


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PDF 0Db431b T0220AB BUK655-500B 711002b aab432D
diode t25 4 L0

Abstract: BUK655-500A BUK655-500B BUK655-500C T0220AB BUK655-500 1c7s
Text: BUK655-500A BUK655-500B BUK655-500C 37-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement , accordance with the Absolute Maximum System (1EC 134) BUK655-500A BUK655-500B BUK655-500C T-39-13 SYMBOL , = 10 V; BUK655-500A lD = 2.5 A BUK655-500B BUK655-500C 500 2.1 3.0 2 0.1 10 1.2 1.4 1.6 4.0 20 1.0 , – PowerMOS transistor BUK655-500A Fast Recovery Diode FET BUK655-500B BUK655-500C T-39-13 REVERSE DIODE , D (3^53131 GOSOb^a 2 PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655


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PDF bbS3131 Q020t. BUK655-500A BUK655-500B BUK655-500C BUK655 -500A -500B -500C diode t25 4 L0 T0220AB BUK655-500 1c7s
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast recovery , PARAMETER VjBRJDSS V g S(TO) 1 lo ss OSS 3 SS °DS(ON) BUK655-500B Drain-source breakdown voltage Gate , BUK655-500B PD% Normalised Power Derating S, S £0 » i 20 1*to T ro ò vr'C Srelisitip ìtion , Fast recovery diode FET BUK655-500B - i iai » V- - - 1lin -to VG S/V F ig . 7 , Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET BUK655-500B 1 1 1


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PDF BUK655-500B T0220AB BUK655-500B
Not Available

Abstract: No abstract text available
Text: Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET , 0030861 B7b * A P X J> Product Specification Philips Semiconductors BUK655-500B PowerMOS , recovery diode FET BUK655-500B Zthj-m b/(K/W ) D0.5 0.2 0 .1 0.05 0.02 \~ i © ff I , Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET BUK655-500B , 0030884 T85 « A P X BUK655-500B 579


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PDF BUK655-500B O220AB bbS3T31
buk455

Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444- 500B BUK444-600B BUK445-400B BUK445- 500B BUK445-600B BUK454-400B BUK454- 500B BUK454-600B BUK455-400B BUK455- 500B BUK455-600B BUK457-400B BUK457- 500B BUK457-600B BUK655-500B BUK657-400B BUK657- 500B BUK854-500IS BUK856-450IX BUK445-60A BUK445-60B BUK445


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PDF BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444-500B BUK444-600B BUK445-400B BUK445-500B BUK445-600B buk455 BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
BUK655-500A

Abstract: BUK655-500B BUK655-500C T0220AB dlp afe 1000
Text: FET BUK655-500A BUK655-500B BUK655-500C GENERAL DESCRIPTION QUICK REFERENCE DATA "T-37-/3 , RATINGS Limiting values in accordance with the Absolute Maximum System (1EC 134) BUK655-500A BUK655-500B , = 0 V; T, =125 "C Vgs=±30V; VDS=0 V Vqs = 10 V; BUK655-500A lD = 2.5 A BUK655-500B BUK655 , – ^53^31 0020^7 □ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655-5QQC T , – PowerMOS transistor BUK655-500A Fast Recovery Diode FET BUK655-500B _BUK655-500C Fig.6.1 Typical output


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PDF bbS3131 a020t. BUK655-500A BUK655-500B BUK655-500C T-37-/3 BUK655 -500A -500B -500C BUK655-500C T0220AB dlp afe 1000
buk638-500b

Abstract: No abstract text available
Text: 500 500 500 »Fully Insulated F-PAK Type No. BUK637-400B BUK657-400B BUK655-500B BUK657- 500B BUK637- 500B BUK638- 500B BUK617-500BE BUK617-500AE Package Outline SOT-93 TO-220AB TO-220AB TO-220AB SOT-93 SOT


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PDF BUK541-100A BUK552-100B BUK542-100B BUK542-100A BUK552-100A BUK553-100B BUK543-100B BUK553-100A BUK543-100A BUK555-100B buk638-500b
d 434 mosfet

Abstract: T0220AB T0-220AB mosfet 345 mosfet 100a mosfet 200B MOSFET N BUK854-500IS MOSFET 606
Text: Transistors including TOPFETs and IGBTs Il TYPE NUMBER ¡TECHNOLOGY [| ENVELOPE |PAGE Index 1 BUK655-500B , -400B BUK437- 500B BUK437-600B BUK438- 500B BUK438-800A BUK438-800B BUK441-100A TOPFET TOPFET TOPFET TOPFET , -400B BUK444- 500B BUK444-600B BUK444-800A BUK444-800B BUK445-60A BUK445-60B BUK445-1OOA BUK445-100B BUK445-200A BUK445-200B BUK445-400B BUK445- 500B BUK445-600B BUK446-800A BUK446-800B BUK446-1000B BUK452-60A BUK452-60B BUK452-100A BUK452-100B BUK453-60A BUK453-60B BUK453-100A BUK453-100B BUK453- 500B BUK454-200A BUK454


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PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L d 434 mosfet T0220AB T0-220AB mosfet 345 mosfet 100a mosfet 200B MOSFET N BUK854-500IS MOSFET 606
BUK445-100A

Abstract: BUK445-600B
Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444- 500B BUK444-600B BUK445-400B BUK445- 500B BUK445-600B BUK454-400B BUK454- 500B BUK454-600B BUK455-400B BUK455- 500B BUK455-600B BUK457-400B BUK457- 500B BUK457-600B BUK655-500B BUK657-400B BUK657- 500B BUK854-500IS BUK856-450IX BUK445-60A BUK445-60B BUK445


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PDF BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444-500B BUK444-600B BUK445-400B BUK445-500B BUK445-600B BUK445-100A
BUK655-500B

Abstract: No abstract text available
Text: FET ■0030000 33T HAPX Product Specification BUK655-500B GENERAL DESCRIPTION N-channel , S7b «APX Philips Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast , . Normalised power dissipation. PD%= lOO-Pç/PD2S-C= fftriJ BUK655-500B Zthj-mb/(K/W) 1E+01 Fig , Philips Semiconductors_Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET , Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET ICfiS/V 0 10 20


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PDF BUK655-500B PINNING-T0220AB bbS3T31 003Dflai4 BUK655-500B
BUK655-500B

Abstract: T0220AB
Text: PHILIPS INTERNATIONAL Philips Semiconductors PowerMOS transistor BUK655-500B Fast recovery , Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET STATIC CHARACTERISTICS , transistor Fast recovery diode FET BUK655-500B 120 110 100 90 80 70 60 SO 40 30 20 10 0 . 1 . ' , transistor BUK655-500B Fast recovery diode FET _ ID/A r 77/0 25 , Philips Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET l


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PDF BUK655-500B T0220AB dSiV-100/ /C-156
T0-220AB

Abstract: TOPFETs FETs BUK417-500B BUK617-500BE BUK454-600 mosfet BUK551-100A 100a mosfet buk456 Igbts guide
Text: 150 100 30 75 25 BUK417-500AE BUK617-500AE BUK417-500BE BUK617-500BE BUK438- 500B BUK638- 500B BUK457- 500B BUK657- 500B BUK637- 500B BUK437- 500B BUK655-500B BUK455- 500B BUK445- 500B BUK454- 500B BUK444- 500B BUK453- 500B


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PDF T0220AB OT186 OT186 BUK856-400IZ T0-220AB TOPFETs FETs BUK417-500B BUK617-500BE BUK454-600 mosfet BUK551-100A 100a mosfet buk456 Igbts guide
TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BT13G BSTC1026
Text: No file text available


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PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BT13G BSTC1026
WMB10

Abstract: diode h5e BUK655-450B T0220AB a/smd diode h5e
Text: No file text available


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PDF BUK655-450B WMB10 diode h5e T0220AB a/smd diode h5e
TRANSISTOR D 471

Abstract: 100-P BUK655-450B T0220AB fredfet
Text: No file text available


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PDF BUK655-450B /V-10 TRANSISTOR D 471 100-P BUK655-450B T0220AB fredfet
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF bbS3T31 BUK655-450B T-31-/3 oni25
sdcs-pow-1

Abstract: SDCS-CON-2 3ADW000163 3ADW000093 CDP312 3ADW000048 3ADW000055 3ADW000078 DCS500 3ADW000055R0401
Text: DCS 500B / DCF 500B DCP 500B How the DCS 500 Documentation System works Description of the converter Volume II D System Description DCS 500B 3ADW000066 Volume III Technical Data 3ADW000054 DCS 500B Operating Instructions (documentation in hand) including information and advise to commission the drive. If three phase DCF 500B field supply units are needed please use the same documents as for DCS 500B armature converters. DCS 500B 3ADW000055 Volume II D1 System Description DCA


Original
PDF 3ADW000066 3ADW000054 3ADW000055 3ADW000148 3ADW000048 3ADW000055R0401 R0401 055R0401A2440000* sdcs-pow-1 SDCS-CON-2 3ADW000163 3ADW000093 CDP312 3ADW000048 3ADW000055 3ADW000078 DCS500
2002 - UDN6144

Abstract: BURROUGHS DI210 CT7001 UDN-6144A DI-502B DI-500B DI-210 Dionics DI 210
Text: Rushmore Street Westbury, NY 11590 LEVEL-SHIFTED GAS DISCHARGE DISPLAY DIGIT DRIVERS DI- 500B DI-502B General Description: The DIONICS DI- 500B and DI-502B circuits are designed for interfacing between MOS , DI- 500B ü MOS and TTL Compatibility ü Pin For Pin Replacements For Sprague UDN-6144A ü Low Power , 4 5 6 7 In1 DIONICS INC DI- 500B 0.250 Out1 NC In2 In3 In4 NC , ) Characteristic Symbol Notes Limits Supply Voltage DI- 500B V+ Measured With Respect to GND 200 DI-502B V


Original
PDF DI-500B DI-502B DI-500B DI-502B VDI-502B) CD-4073-GM 150pF DI-210 UDN6144 BURROUGHS DI210 CT7001 UDN-6144A DI-210 Dionics DI 210
1997 - triacs

Abstract: BT139-800 equivalent BT137-800 Triacs BTA208 600B Triacs equivalent BT136-500E 500D BTA208-600B equivalent BT136 bt134
Text: BTA204- 500B BTA204-500C BTA204-500D BTA204-500E BTA204-500F BTA204-600B BTA204-600C BTA204 , SOT78 (TO220AB) BTA204M- 500B BTA204M-500C BTA204M-500D BTA204M-500E BTA204M-500F BTA204M , -800F BTA204S- 500B BTA204S-500C BTA204S-500D BTA204S-500E BTA204S-500F BTA204S-600B BTA204S-600C BTA204S , TRIACS SOT428 (TO252) BTA204W- 500B BTA204W-500C BTA204W-500D BTA204W-500E BTA204W , Thyristors and Triacs Index TYPE NUMBER TECHNOLOGY ENVELOPE BTA204X- 500B BTA204X


Original
PDF BR100/03 BT131-500 BT131-600 BT132-500D BT132-600D BT134-500 BT134-500D BT134-500E BT134-500F BT134-500G triacs BT139-800 equivalent BT137-800 Triacs BTA208 600B Triacs equivalent BT136-500E 500D BTA208-600B equivalent BT136 bt134
136S6

Abstract: thyristor BT 161 triacs BT 412 T0252 BT thyristor BTA212-500D 136S-600F Triacs BTA208 600B 137S8 BTA208
Text: TECHNOLOGY ENVELOPE Index I PAGE 425 | BTA204- 500B BTA204-500C BTA204-500D BTA204-500E BTA204 , -800F BTA204M- 500B BTA204M-500C BTA204M-500D BTA204M-500E BTA204M-500F BTA204M-600B BTA204M-600C BTA204M-600D BTA204M-600E BTA204M-600F BTA204M-800B BTA204M-800C BTA204M-800E BTA204M-800F BTA204S- 500B BTA204S , -600F BTA204S-800B BTA204S-800C BTA204S-800E BTA204S-800F BTA204W- 500B BTA204W-500C BTA204W-500D BTA204W , Semiconductors Power Thyristors and Triacs |[ TYPE NUMBER | TECHNOLOGY ENVELOPE PAGE Index 1 BTA204X- 500B


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PDF BR100/03 BT131-500 BT131-600 BT132-500D BT132-600D BT134-500 BT134-500D BT134-500E BT134-500F BT134-500G 136S6 thyristor BT 161 triacs BT 412 T0252 BT thyristor BTA212-500D 136S-600F Triacs BTA208 600B 137S8 BTA208
BUK454-500B

Abstract: BUK454-500A T0220AB K45450 tb 10 n 6
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor SSE D bbSB^l 0Q2DM7G S BUK454-500A BUK454- 500B a , power dissipation Drain-source on-state resistance -500A 500 3.7 75 2.3 - 500B 500 3.3 75 2.8 V A W  , transistor BUK454-500A BUK454- 500B mmmammmmmm^Bmmmmmmmt^mmmm^m^mmmmmmmmmam, RATINGS Limiting values in , V -500A - 500B Id Drain current (DC) "U = 25 -C - 3.7 3.3 A lo Drain current (DC) Trt-100 *C - , 0 V; T =125 "C Vqs = ±30 V; VDS = 0 V Vqs = 10 V; BUK454-500A lD = 1.5 A BU K454- 500B DYNAMIC


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PDF BUK454-500A BUK454-500B BUK454 -500A -500B T-39-11 T0220AB K45450 tb 10 n 6
2009 - BURROUGHS

Abstract: UDN6144A ct 7001 DI500B CD4073 transistor pnp-npn UDN-6144A DI-502B DI-500B DI-210
Text: Rushmore Street Westbury, NY 11590 LEVEL-SHIFTED GAS DISCHARGE DISPLAY DIGIT DRIVERS DI- 500B DI-502B General Description: The DIONICS DI- 500B and DI-502B circuits are designed for interfacing between MOS , Schematic (Each Section) V+ Input Features: Level Shift Capability: 125V For DI-502B 200V For DI- 500B , 7 In1 DIONICS INC DI- 500B 0.250 Out1 NC In2 In3 In4 NC GND 0.135 , Notes Limits Supply Voltage DI- 500B V+ Measured With Respect to GND 200 DI-502B V+ Measured With


Original
PDF DI-500B DI-502B DI-500B DI-502B VDI-502B) 150pF CD-4073-GM DI-210 BURROUGHS UDN6144A ct 7001 DI500B CD4073 transistor pnp-npn UDN-6144A DI-210
BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Text: -400B BUK457-400B BUK437-400B BUK453- 500B BUK454- 500B BUK444- 500B BUK455- 500B BUK445- 500B BUK457- 500B BUK437- 500B


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PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
BUK454-500B

Abstract: BUK454-500A K4545 buk454 T0220AB drain
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor S SE D bbSB^l 0Q2DM7G S BUK454-500A BUK454- 500B , ) Total power dissipation Drain-source on-state resistance -500A 500 3.7 75 2.3 - 500B 500 3.3 75 2.8 V A W , PHILIPS/DISCRETE 25E D ■bbS3131 0D20M71 7 ■PowerMOS transistor BUK454-500A BUK454- 500B RATINGS , 100 -c Tmb = 25 'C - -500A 3.7 2.3 15 - 500B 3.3 2.1 13 A A A Plot Tf Total power dissipation Storage , ; Vqs = 0 V; T =125 "C Vqs = ±30 V; VDS = 0 V Vqs = 10 V; BU K454-500A lD = 1.5 A BUK454- 500B


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PDF BUK454-500A BUK454-500B BUK454 -500A -500B T0220AB; BUK454-500B K4545 T0220AB drain
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