The Datasheet Archive

BUK545 datasheet (47)

Part Manufacturer Description Type PDF
BUK545-100A Philips Semiconductors PowerMOS transistor Logic level FET Original PDF
BUK545-100A Toshiba Power MOSFETs Cross Reference Guide Original PDF
BUK545-100A Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BUK545-100A Others Shortform Datasheet & Cross References Data Scan PDF
BUK545-100A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUK545-100A Philips Semiconductors PowerMOS transistor Scan PDF
BUK545-100A Philips Semiconductors PowerMOS transistor Logic level FET Scan PDF
BUK545-100B Philips Semiconductors PowerMOS transistor Logic level FET Original PDF
BUK545-100B Toshiba Power MOSFETs Cross Reference Guide Original PDF
BUK545-100B Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BUK545-100B Others Shortform Datasheet & Cross References Data Scan PDF
BUK545-100B Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUK545-100B Philips Semiconductors PowerMOS transistor Scan PDF
BUK545-100B Philips Semiconductors PowerMOS transistor Logic level FET Scan PDF
BUK545-200A Philips Semiconductors PowerMOS transistor Logic level FET Original PDF
BUK545-200A Toshiba Power MOSFETs Cross Reference Guide Original PDF
BUK545-200A Others Shortform Datasheet & Cross References Data Scan PDF
BUK545-200A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BUK545-200A Philips Semiconductors PowerMOS transistor Scan PDF
BUK545-200A Philips Semiconductors PowerMOS transistor Logic level FET Scan PDF

BUK545 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: ; BUK545-200A lD= 7 A BUK545-200B MIN. 200 1.0 - TYP. 1.5 1 0.1 10 0.2 0.24 MAX. 2.0 10 1.0 100 , Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A /B Logic level , S S Vgs(T O ) I I r> D S (O N ) BUK545-200A /B PARAMETER Drain-source breakdown voltage Gate , specified SYMBOL W Dss BUK545-200A /B PARAMETER Drain-source non-repetitive unclamped inductive , Product Specification PowerMOS transistor Logic level FET BUK545-200A /B 9fs/S 15 - 10


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PDF BUK545-200A/B BUK545 -200A -200B
BUK545-50A

Abstract: BUK545 BUK545-50B
Text: DDSOSIl b> ■PowerMOS transistor BUK545-50A Logic Level FET BUK545-50B RATINGS Limiting values in , on-state Vqs = 5 V; BUK545-50A - 0.035 0.042 ii resistance lD = 20 A BUK545-50B - 0.045 0.055 ß DYNAMIC , bb53131 0020 513 T BUK545-50A BUK545-50B T-39-09 100 ID/A VG.Ì/V 10 Fig.6.1 Typical output , DD20ST4 1 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B T-39-09 1 IE-01 IE-02 ID /A 1E 05 â , N AMER PHILIPS/DISCRETE 5SE D fc.h53T31 DDEOSTG 4 PowerMOS transistor Logic Level FET BUK545-50A


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PDF h53T31 BUK545-50A BUK545-50B BUK545 ID/100
Not Available

Abstract: No abstract text available
Text: . BUK545-1OOA /B QUICK REFERENCE DATA SYMBOL Vos r to ! FU S IO N ) PARAMETER BUK545 Drain-source , >DSS lo s s l(5SS BUK545-100A /B PARAMETER Drain-source breakdown voltage Gate threshold voltage , inductive turn-off energy CONDITIONS l0 = 25 A ; Vdo < 50 V ; VG S= 5 V ; R Q S = 5 0 fl ' BUK545-100A /B , PowerMOS transistor Logic level FET BUK545-100A /B ID /A VGS Fig.5. Typical output , PowerMOS transistor Logic level FET BUK545-1OOA /B SUB-THRESHOLD CONDUCTION ! 'I (g.xy


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PDF BUK545-1OOA/B BUK545 -100A -100B OT186
LD 757 ps

Abstract: No abstract text available
Text: (TO) I 'D SS bss Ig s s R d S(ON) BUK545-100A BUK545-100B - DYNAMIC CHARACTERISTICS Th , Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A /B Logic level , transistor Logic level FET STATIC CHARACTERISTICS Tte = 25 'C unless otherwise specified BUK545-100A /B , BUK545-100A /B SYMBOL W qss PARAMETER Drain-source non-repetitive unclamped inductive turn-off , BUK545-100A /B r 5 I ¥ / £ W3S *V = 4 3 0 2 4 V D S /V 6 a 10 I D/ A


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PDF BUK545-100A/B BUK545 -100A -100B BUK545-100A/B 1E-02 LD 757 ps
Not Available

Abstract: No abstract text available
Text: = 100 V; VG S = 0 V; f =125 ` C VG S = +10 V; VD S= 0 V VG g = 5 V; BUK545-100A lD= 13 A BUK545-100B MIN. 100 1.0 - BUK545-100A /B TYP. 1.5 1 0.1 10 0.075 0.09 MAX. 2.0 10 1.0 100 0.085 0.11 , Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A /B Logic level , . BUK545-1OOA /B TYP. MAX. 140 UNIT mJ ' Normalised Power Derating witt hei tsir k a mpi uno , BUK545-100A /B I j ^ 5 7 ^ £ VGS ( v = A / r / < V fA I 3 Fig.5. Typical output


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PDF BUK545-100A/B BUK545 -100A -100B
1996 - BUK545

Abstract: BUK545-200A BUK545-200B
Text: °C VGS = ±10 V; VDS = 0 V VGS = 5 V; BUK545-200A BUK545-200B ID = 7 A 1.0 - 1.5 1 0.1 , . PINNING - SOT186 PIN BUK545-200A /B QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX , transistor Logic level FET BUK545-200A /B STATIC CHARACTERISTICS Ths = 25 °C unless otherwise , Logic level FET BUK545-200A /B AVALANCHE LIMITING VALUE Ths = 25 °C unless otherwise specified , BUK545-200A ,B ID S/ 100 90 )= VD A tp = 10 us B N (O 80 70 TYP. DS


Original
PDF OT186 BUK545-200A/B BUK545 -200A -200B BUK545 BUK545-200A BUK545-200B
1996 - BUK545

Abstract: BUK545-60A BUK545-60B BUK545-60A/B
Text: VDS = 60 V; VGS = 0 V; Tj =125 °C VGS = ±15 V; VDS = 0 V VGS = 5 V; BUK545-60A BUK545-60B ID = 20 , . PINNING - SOT186 PIN BUK545-60A /B QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT , Logic level FET BUK545-60A /B STATIC CHARACTERISTICS Ths = 25 °C unless otherwise specified , Logic level FET BUK545-60A /B AVALANCHE LIMITING VALUE Ths = 25 °C unless otherwise specified , MIN. TYP. MAX. UNIT - - 90 mJ BUK545-60 ID / A 1000 with heatsink


Original
PDF OT186 BUK545-60A/B BUK545 BUK545 BUK545-60A BUK545-60B BUK545-60A/B
buk638-500b

Abstract: No abstract text available
Text: Pow er Devices Power M O SFET Transistors Logic Level FET's (in order of Voltage/RDS on) (cont.) VDS MAX (V) 100 100 100 100 100 100 100 100 100 100 100 100 100 200 200 200 200 200 200 *Fully Insulated F-PAK Type No. BUK541-100A BUK552-100B BUK542-100B BUK542-100A BUK552-100A BUK553-100B BUK543-100B BUK553-100A BUK543-100A BUK555-100B BUK545-100B BUK555-100A BUK545-100A BUK554-200B BUK554-200A BUK555-200B BUK545-200B BUK555-200A BUK545-200A Package Outline SOT-186* T0-220AB SOT-186* SOT-186* TO-220AB TO


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PDF BUK541-100A BUK552-100B BUK542-100B BUK542-100A BUK552-100A BUK553-100B BUK543-100B BUK553-100A BUK543-100A BUK555-100B buk638-500b
transistor B 764

Abstract: No abstract text available
Text: = 0 V; T =125 'C Vas = ± 1 0 V ;V os = 0 V VG S= 5 V; BUK545-200A tD= 7 A BUK545-200B MIN. 200 1.0 , . BUK545-200A /B QUICK REFERENCE DATA SYMBOL ^DS PARAMETER BUK545 Drain-source voltage Drain , `C unless otherwise specified BUK545-200A /B SYMBOL V (8H )D S S V (T O ) 1 gS dss loss Igss , unless otherwise specified BUK545-200A /B SYMBOL W qss PARAMETER Drain-source non-repetitive , Specification PowerMOS transistor Logic level FET BUK545-200A /B ID /A u > 5. > Y' 4 20 7 $ & S


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PDF BUK545-200A/B BUK545 OT186 Fig-11. transistor B 764
Not Available

Abstract: No abstract text available
Text: V; ] ] = 25 'C VD S = 60 V; VG S = 0 V; T, =125 ` C VG S = ±15 V; VD S= 0 V VG S = 5 V; BUK545-60A lD = 20 A BUK545-60B MIN. 60 1.0 - BUK545-60A /B TYP. 1.5 1 0.1 10 0.035 0.045 MAX. 2.0 10 , Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A /B Logic level FET , 39 A ; VD D < 25 V ; Vqs = 5 V ; Rgs = 50 ÇI MIN. " BUK545-60A /B TYP. MAX. 90 UNIT mJ , Logic level FET I 80 BUK545-60A /B wY A/ jj V V G> /V 5 60 ft 2- - 3 I - 1


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PDF BUK545-60A/B BUK545
1996 - BUK545

Abstract: BUK545-100A BUK545-100B
Text: °C VGS = ±10 V; VDS = 0 V VGS = 5 V; BUK545-100A BUK545-100B ID = 13 A 1.0 - 1.5 1 0.1 , . PINNING - SOT186 PIN BUK545-100A /B QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX , transistor Logic level FET BUK545-100A /B STATIC CHARACTERISTICS Ths = 25 °C unless otherwise , Logic level FET BUK545-100A /B AVALANCHE LIMITING VALUE Ths = 25 °C unless otherwise specified , MIN. 100 with heatsink compound 110 TYP. MAX. UNIT - - 140 mJ BUK545-100A.B


Original
PDF OT186 BUK545-100A/B BUK545 -100A -100B BUK545 BUK545-100A BUK545-100B
K545

Abstract: No abstract text available
Text: €™C S S VG = +10 V; VD = 0 V S S VG = 5 V; S BUK545-100A lD= 13 A BUK545-100B 1.0 2.0 , Logic level FET BUK545-100 >VB STATIC CHARACTERISTICS Th = 25 'C unless otherwise specified s , * lE D bb53^31 Q03D7b7 T15 * A P X Product Specification Philips Semiconductors BUK545-100A , PowerMOS transistor Logic level FET BUK545-1OOA /B g fs /S -7 15 â , 003D7bS f ' f « A P X lil BUK545-100A /B ( 2% / 0 J> Product Specification Philips


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PDF bb53R31 K545-1OOA/B PINNING-SOT186 BUK545 003D7bS BUK545-100A/B K545
K545

Abstract: BUK545 BUK545-200A BUK545-200B
Text: CHARACTERISTICS Ths = 25 'C unless otherwise specified BUK545-200A /B SYMBOL PARAMETER CONDITIONS MIN. TYP , 25 'C VDS = 200 V; VGS = 0 V; V, =125 ^C VGS = ±10V;VDS = 0V VGS = 5 V; BUK545-200A lD = 7 A BUK545-200B DYNAMIC CHARACTERISTICS Ths = 25 *C unless otherwise specified SYMBOL PARAMETER CONDITIONS , Manufacturer bSE T> PowerMOS transistor Logic level FET BUK545-200A /B AVALANCHE LIMITING VALUE T^ = 25 'C , transistor Logic level FET BUK545-200A /B 30 20 ID/A ii 4 5. s -


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PDF 7110flEb K545-200A/B -SOT186 BUK545 -200A K545 BUK545-200A BUK545-200B
T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: -100B BUK545-60A BUK545-60B BUK545-60H BUK545-100A BUK545-100B BUK545-200A BUK545-200B BUK552-60A BUK552


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PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z
837 mosfet

Abstract: T0-220AB 912 MOSFET BUK108-50DL PHILIPS MOSFET igbt MOSFET 1053 mosfet mosfet handbook 200b 200a mosfet
Text: -100B BUK543-60A BUK543-60B BUK543-100A BUK543-100B BUK545-60A BUK545-60B BUK545-60H BUK545-100A BUK545-100B BUK545-200A BUK545-200B BUK552-60A BUK552-60B BUK552-100A BUK552-100B BUK553-48C BUK553-60A BUK553


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PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet T0-220AB 912 MOSFET BUK108-50DL PHILIPS MOSFET igbt MOSFET 1053 mosfet mosfet handbook 200b 200a mosfet
Not Available

Abstract: No abstract text available
Text: ^ =125 *C VGS = ±15 V; VDS = 0 V VGS = 5 V; BUK545-60A lD= 20 A BUK545-60B V qs V g S(TO) =V , Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A /B Logic level FET , R )D S S BUK545-60A /B PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero , BUK545-60A /B TYP. " MAX. 90 UNIT mJ 120 PD % 110 100 Normalised Power Derating wrti he , Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK545-60A /B


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PDF BUK545-60A/B BUK545 BUK545-60A/B
Not Available

Abstract: No abstract text available
Text: BUK545-60A lD= 20 A BUK545-60B 1.0 - 1.5 1 0.1 10 0.035 0.045 2.0 10 1.0 100 0.042 , converters, and in automotive and general purpose switching applications. PINNING-SOT186 PIN BUK545-60A , Philips Semiconductors BUK545-60A /B PowerMOS transistor Logic level FET STATIC CHARACTERISTICS Th , Semiconductors PowerMOS transistor Logic level FET BUK545-60A /B AVALANCHE LIMITING VALUE Th = 25 'C , transistor Logic level FET BUK545-60A /B gf s/ S I D/ A I D/ A Fig.8. Typical


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PDF bbS3T31 00307b0 PINNING-SOT186 BUK545-60A/B BUK545 0Q307b4
BUK545

Abstract: BUK545-100A BUK545-100B
Text: Specification PowerMOS transistor BUK545-100A /B Logic level FET_ GENERAL DESCRIPTION N-channel , transistor BUK545-100A /B Logic level FET STATIC CHARACTERISTICS Ths = 25 'C unless otherwise specified , ; VDS = 0 V - 10 100 nA RdS(ON) Drain-source on-state VGS = 5 V; BUK545-100A - 0.075 0.085 lì resistance lD = 13 A BUK545-100B - 0.09 0.11 a DYNAMIC CHARACTERISTICS Ths = 25 °C unless otherwise , Product Specification PowerMOS transistor BUK545-1OOA /B Logic level FET AVALANCHE LIMITING VALUE Ths =


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PDF D307bS BUK545-100A/B PINNING-SOT186 BUK545 -100A BUK545-100A BUK545-100B
BUK545

Abstract: BUK545-60A BUK545-60B
Text: VDS = 60 V; VGS = 0 V; T =125 °C VQS = ±15 V; VDS = 0 V VGS = 5 V; BUK545-60A lD = 20 A BUK545-60B , Specification PowerMOS transistor BUK545-60A /B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement , PHILIPS INTERNATIONAL Philips Semiconductors bSE ]> PowerMOS transistor BUK545-60A /B Logic level FET , Product Specification PowerMOS transistor Logic level FET BUK545-60A /B AVALANCHE LIMITING VALUE Ths = , 1TÖ «PHIN Product Specification PowerMOS transistor Logic level FET BUK545-60A /B id/a 80 60 40


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PDF 7110ASfc. BUK545-60A/B OT186 BUK545 10CHXh ID/100 BUK545-60A BUK545-60B
M33 thermal

Abstract: BUK545 BUK545-60A BUK545-60B
Text: ;T^=125-C VGS = ±15 V; VDS = 0V VGS = 5 V; BUK545-60A lD = 20 A BUK545-60B 60 1.0 1.5 1 0.1 10 0.035 , Specification PowerMOS transistor BUK545-60A /B Logic level FET GENERAL DESCRIPTION N-channel enhancement mode , transistor Logic level FET ■bb53^31 00307bl ST7 ■APX Product Specification BUK545-60A /B STATIC , level FET BUK545-60A /B AVALANCHE LIMITING VALUE Ths = 25 'C unless otherwise specified SYMBOL , DDBOTbB 37T ■APX Product Specification PowerMOS transistor Logic level FET BUK545-60A /B ID/A e 10


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PDF QD307b0 BUK545-60A/B BUK545 M33 thermal BUK545-60A BUK545-60B
FET TH 469

Abstract: No abstract text available
Text: ; BUK545-200A l, = 7 A BUK545-200B MIN. 200 1.0 - BUK545-200A /B TYP. 1.5 1 0.1 10 0.2 0.24 MAX , Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A /B Logic level , ; Ros = 50 n MIN. " BUK545-200A /B TYP. " MAX. 100 UNIT mJ 120Nor m al i sed Power , Specification PowerMOS transistor Logic level FET BUK545-200A /B 1C 4 5. Y V Vp s / I 3 r , transistor Logic level FET BUK545-200A /B ÎE-OT IE-02 1E-03 ID /A SUB-THRESHOLD CONDUCTION ! !


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PDF BUK545-200A/B BUK545 -200A -200B FET TH 469
80n70

Abstract: transistor B 764 transistor B 764 04 Y
Text: ; BUK545-200A lD = 7 A BUK545-200B MIN. 200 1.0 - TYP. 1.5 1 0.1 10 0.2 0.24 MAX. 2.0 10 1.0 100 , /DC and AC/DC converters, and in automotive and general purpose switching applications. BUK545-200A , V (B R )D S S BUK545-200A /B PARAMETER Drain-source breakdown voltage Gate threshold voltage , V ; R gs = 50 Q MIN. " BUK545-200A /B TYP. MAX. 100 UNIT mj 120 11 0 P®0 /° , Semiconductors Product Specification PowerMOS transistor Logic level FET BUK545-200A /B gfs/S 15 V


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PDF BUK545-200A/B BUK545 -200A -200B -SOT186 80n70 transistor B 764 transistor B 764 04 Y
Not Available

Abstract: No abstract text available
Text: Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode , V; Vqs = 0 V; Tj =125 *C Vgs = ±15 V; VD = 0 V S Vqs = 5 V; BUK545-50A lD = 20 A BUK545-50B , bb53131 0 0 2 0 5 t f : l ]2 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B , Logic Level FET BUK545-50A BUK545-50B T-39-09 100 g fs / S ID/A / // 10 80 60 , transistor Logic Level FET (□(353131 D D S O S m 1 BUK545-50A BUK545-50B T -3 9 -0 9 1


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PDF BUK545-50A BUK545-50B BUK545
BUK545-50A

Abstract: 1E05 BUK545 BUK545-50B
Text: (^53^31 DDSOSIl b> ■PowerMOS transistor BUK545-50A Logic Level FET BUK545-50B RATINGS Limiting , BUK545-50A Logic Level FET BUK545-50B REVERSE DIODE RATINGS AND CHARACTERISTICS Thg = 25 'C unless , /DISCRETE 2SE D ■(^53131 OOSOSTS T ■PowerMOS transistor BUK545-50A Logic Level FET BUK545-50B T , ^53131 0G20ST4 1 BUK545-50A BUK545-50B T-39-09 IE-01 IE-02 ID/A SUB-THRESHOLD CONDUCTION 1E05 - , N AMER PHILIPS/DISCRETE 5SE D fc.h53T31 DDEOSTG 4 PowerMOS transistor Logic Level FET BUK545-50A


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PDF h53T31 BUK545-50A BUK545-50B BUK545 ID/100 1E05 BUK545-50B
d 434 mosfet

Abstract: T0220AB T0-220AB mosfet 345 mosfet 100a mosfet 200B MOSFET N BUK854-500IS MOSFET 606
Text: NUMBER ¡TECHNOLOGY ¡ENVELOPE |PAGE Index BUK543-100B BUK545-60A BUK545-60B BUK545-100A BUK545-100B BUK545-200A BUK545-200B BUK551-100A BUK551-100B BUK552-60A BUK552-60B BUK552-100A BUK552-100B BUK553


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PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L d 434 mosfet T0220AB T0-220AB mosfet 345 mosfet 100a mosfet 200B MOSFET N BUK854-500IS MOSFET 606
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