The Datasheet Archive

SF Impression Pixel

Search Stock (18)

  You can filter table by choosing multiple options from dropdownShowing 18 results of 18
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BU508A STMicroelectronics Bristol Electronics 90 - -
BU508A Motorola Mobility LLC Rochester Electronics 3,741 $6.57 $5.34
BU508AF STMicroelectronics Chip1Stop 286 $1.63 $1.37
BU508AF STMicroelectronics Avnet - $1.49 $1.19
BU508AF STMicroelectronics Avnet - €1.81 €0.93
BU508AF Chip One Exchange 172 - -
BU508AF STMicroelectronics Future Electronics - $3.06 $2.54
BU508AF STMicroelectronics New Advantage Corporation 2,550 $2.03 $1.89
BU508AW STMicroelectronics Future Electronics - $3.33 $2.56
BU508AW STMicroelectronics Avnet 6 $2.49 $1.29
BU508AW STMicroelectronics RS Components 206 £2.17 £1.57
BU508AW STMicroelectronics RS Components 154 £1.92 £1.57
BU508AW STMicroelectronics RS Components 90 £1.75 £1.27
BU508AW STMicroelectronics Newark element14 807 $2.04 $1.40
BU508AW STMicroelectronics Avnet - €1.79 €1.49
BU508AW STMicroelectronics element14 Asia-Pacific 1,307 $3.38 $1.64
BU508AW STMicroelectronics Farnell element14 1,529 £2.03 £1.40
BU508AW STMicroelectronics Avnet 600 $2.96 $2.34

No Results Found

BU508A datasheet (72)

Part Manufacturer Description Type PDF
BU508A Central Semiconductor Power Transistors TO-218 Case, NPN High Voltage Switching Original PDF
BU508(A) Others Silicon NPN Transistor Original PDF
BU508A Philips Semiconductors Silicon Diffused Power Transistor Original PDF
BU508A STMicroelectronics High Voltage Fast-Switching NPN Power Transistor Original PDF
BU508A STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Original PDF
BU508A USHA NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. Original PDF
BU508A Wing Shing Computer Components NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) Original PDF
BU508A Central Semiconductor Power Transistors Scan PDF
BU508A Korea Electronics V(ceo): 700V I(c): 8A P(c): 60W NPN Silicon Transistor Scan PDF
BU508A Mospec POWER TRANSISTORS(5A,1500V,125W) Scan PDF
BU508A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BU508A Motorola Switchmode Datasheet Scan PDF
BU508A Motorola European Master Selection Guide 1986 Scan PDF
BU508A Motorola Power Transistors 8A 1500V Scan PDF
BU508A Others Cross Reference Datasheet Scan PDF
BU508A Others Cross Reference Datasheet Scan PDF
BU508A Others Semiconductor Master Cross Reference Guide Scan PDF
BU508A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BU508A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BU508A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

BU508A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - c120 transistor

Abstract: BU508A ts 4141 TRANSISTOR transistor BU508A Data- sheet transistor k 1119 transistor 800V 1A transistor data cd BU508A to3p TRANSISTOR BU508A
Text: TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV , BU508A Rev260405D Continental Device India Limited Data Sheet Page 1 of 6 BU508A TO- 3PN , BU508A Rev260405D Continental Device India Limited Data Sheet Page 2 of 6 BU508A TO- 3PN , (WEEE). BU508A Rev260405D Continental Device India Limited Data Sheet Page 3 of 6 21.2 BU508A TO- 3PN Non Isolated Precautions for physical handling of Power Plastic Transistors (TO


Original
PDF BU508A C-120 BU508A Rev260405D c120 transistor ts 4141 TRANSISTOR transistor BU508A Data- sheet transistor k 1119 transistor 800V 1A transistor data cd BU508A to3p TRANSISTOR BU508A
2002 - BU508A

Abstract: BU208A BU508AFI BU508
Text: BU208A BU508A / BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using , Value 1500 700 10 8 15 BU508A BU508AFI TO - 218 ISOWATT218 125 50 2500 -65 to 175 -65 to , / BU508A / BU508AFI THERMAL DATA TO-3 R thj-case Thermal Resistance Junction-case TO , Operating Areas (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating


Original
PDF BU208A BU508A/BU508AFI BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A BU508
BU508A

Abstract: BU508D BY223 philips bu508a bu50ba diode BY223 BU508D transistor dd77473 BU-508A transistor BU508D
Text: Philips Semiconductors Product specification Silicon diffused power transistors BU508A , . 0.7 jus mechanical data Fig. 1 SOT93A. BU508A BU508D 1 = base 2 = collector 3 = emitter , power transistors BU508A ; BU508D RATINGS Limiting values in accordance with the Absolute Maximum , power transistors BU508A ; BU508D mm VCE(V> vCEOsust Fig. 2 Test circuit for VcEOsust- Fig. 3 , Semiconductors Product specification Silicon diffused power transistors BU508A ; BU508D + 150V nominal adjust


OCR Scan
PDF BU508A; BU508D OT93A BU508D BU508D) 711002b DD77473 BU508A BY223 philips bu508a bu50ba diode BY223 BU508D transistor BU-508A transistor BU508D
2004 - BU508A

Abstract: BU508D data sheet bu508d 508D BU-508A 6 PIN TRANSISTORS 566
Text: BU508A , 508D Horizontal Deflection Transistors High Voltage Switching Specifically designed , Voltage VCEX = 1500V (Minimum) - BU508A , BU508D. · Glassivated Base-Collector Junction. Dimensions Minimum Maximum NPN BU508A A 20.63 22.38 B 15.38 16.20 C 1.90 2.70 , ) Dimensions : Millimetres Page 1 31/05/05 V1.0 BU508A , 508D Horizontal Deflection Transistors , Page 2 31/05/05 V1.0 BU508A , 508D Horizontal Deflection Transistors Electrical Characteristics


Original
PDF BU508A, BU508D. BU508A BU508A BU508D data sheet bu508d 508D BU-508A 6 PIN TRANSISTORS 566
2002 - BU508A

Abstract: BU208A BU508AFI T218
Text: BU208A BU508A / BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , Unit V V V A A W V o o C C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R , (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating Curves (TO , Switching Time Inductive Load 3/8 BU208A / BU508A / BU508AFI Switching Time Inductive Load Figure


Original
PDF BU208A BU508A/BU508AFI BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A T218
BU208A

Abstract: No abstract text available
Text: BU208A BU508A / BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . STM PREFERRED , , BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high , °c 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO -3 Rth j-c a se Therm al R esistance , 5 lc (A) BU208A / BU508A / BU508AFI Figure 1 : Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI TO-3 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX


OCR Scan
PDF BU208A BU508A/BU508AFI ISOWATT218 BU208A, BU508A BU508AFI olleSOWATT218 P025C BU208A
1997 - BU508A

Abstract: BU208A BU508AFI
Text: BU208A BU508A / BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case TO , -3) 2/8 Safe Operating Area (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI DC Current Gain , Switching Time Inductive Load (see figure 1) 3/8 BU208A / BU508A / BU508AFI Figure 1: Inductive Load


Original
PDF BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A
BU508A

Abstract: BU508D philips bu508a BY223 transistor BU508D diode BY223 BU508D transistor BY22B transistor AS 431 3BS transistor
Text: Philips Semiconductors Product specification Silicon diffused power transistors BU508A , typ. 0.7 jus MECHANICAL DATA Fig. 1 SOT93A. BU508A 1 = base 2 = collector 3 = emitter BU508D , specification Silicon diffused power transistors BU508A ; BU508D RATINGS Limiting values in accordance , specification Silicon diffused power transistors BU508A ; BU508D 30-60 Hz 7262340.1 mm VCE vCEOsust Fig , Product specification Silicon diffused power transistors BU508A ; BU508D - 150 V nominal adiust for lCM


OCR Scan
PDF BU508A; BU508D OT93A BU508D BU508D) 711002b BU508A philips bu508a BY223 transistor BU508D diode BY223 BU508D transistor BY22B transistor AS 431 3BS transistor
BU508

Abstract: BU508D transistor bu508 BU508 CIRCUITS bus08a bu508 transistor BU508B transistor Bu508A BU508A BU506
Text: ) Collector - Emitter Saturation Voltage (lc =4.5 A, lB = 2.0 A) BU508A.BU508D BU508 ^CE(sat) 1.0 5.0 V Base , .) BU508, BU508A ,BU508D * Glassivated Base-Collector Junction MAXIMUM RATINGS THERMAL CHARACTERISTICS , 25 50 75 100 125 150 Tc , TEMPERATUREC C) NPN BU508 BU508A BU508D Characteristic Symbol , 0.70 BU508, BU508A ,BU508D NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , Test: Pulse width ^ 300 us , Duty Cycle < 2.0% BU508, BU508A ,ßU508D NPN 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0


OCR Scan
PDF BU508 BU508A BU508D BU508D transistor bu508 BU508 CIRCUITS bus08a bu508 transistor BU508B transistor Bu508A BU506
1999 - BU208A

Abstract: TO-218 weight bu208a base bu508a BU508AFI equivalent BU508AFI T218
Text: BU208A BU508A / BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa , BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case TO , / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation , / BU508A / BU508AFI Figure 1: Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI


Original
PDF BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A TO-218 weight bu208a base BU508AFI equivalent T218
BU508A

Abstract: BU508D transistor d 1991 ar T1185 philips bu508a transistor Bu508A
Text: N AMER PHILIPS/DISCRETE blE D ■D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR , mechanical data Fig. 1 SOT93A. BU508A 1 = base 2 = collector 3 = emitter & 4,3 BU508D 18,2 16,1 , BU508A BU508D LIE D 1^53131 002öBb5 Tbä «APX ratings Limiting values in accordance with the , Manufacturer N AUER PHILIPS/DISCRETE Silicon diffused power transistor LIE D ■^53^31 DDEÖEbb ITH BU508A , bu508a 'cm _ -90% V-10% i \ — J- i - t. - Fig. 4 Switching times waveforms; Icm = 4.5 A


OCR Scan
PDF D02A2b4 BU508A BU508D OT93A BU508D BU508D) transistor d 1991 ar T1185 philips bu508a transistor Bu508A
2002 - BU208A

Abstract: BU508A bu208a base BU508AFI china tv schematic diagram TO-218 weight bu508a diagram
Text: BU208A BU508A / BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , V V V A A W V o o C C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 R , ) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating Curves (TO-218/ISOWATT218) DC Current , Inductive Load 3/8 BU208A / BU508A / BU508AFI Switching Time Inductive Load Figure 1: Inductive


Original
PDF BU208A BU508A/BU508AFI BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A bu208a base china tv schematic diagram TO-218 weight bu508a diagram
2001 - BU508A

Abstract: bu208a bu508a diagram
Text: ® BU208A BU508A / BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , ) Value 1500 700 10 8 15 BU208A BU508A BU508AFI TO - 3 TO - 218 ISOW AT T218 150 125 50 -65 to 175 -65 to , / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case Max 1 TO -218 1 ISO , -218/ISOWATT218) 2/8 BU208A / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation Voltage


Original
PDF BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 bu508a diagram
2002 - BU508A

Abstract: BU208A BU508AFI bu508a diagram DSASW003743
Text: BU208A BU508A / BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , V V V A A W V o o C C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 R , ) BU208A / BU508A / BU508AFI Derating Curves (TO-3) Derating Curves (TO-218/ISOWATT218) DC Current , bs O 3/8 BU208A / BU508A / BU508AFI Switching Time Inductive Load uc d Figure 1


Original
PDF BU208A BU508A/BU508AFI BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A bu508a diagram DSASW003743
1998 - BU208A

Abstract: BU508A BU508AFI BU508aFI equivalent TO-218 Package
Text: BU208A BU508A / BU508AFI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s , DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for , BU208A / BU508A / BU508AFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case TO , -3) 2/8 Safe Operating Area (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI DC Current Gain , Switching Time Inductive Load (see figure 1) 3/8 BU208A / BU508A / BU508AFI Figure 1: Inductive Load


Original
PDF BU208A BU508A/BU508AFI ISOWATT218 E81734 BU208A, BU508A BU508AFI O-218 ISOWATT218 BU208A BU508aFI equivalent TO-218 Package
bu508a

Abstract: c 2579 power transistor transistor BU508A Data- sheet TRANSISTOR BU508A c 2579 transistor using of damper in Horizontal Output Transistor transistor 800V 1A
Text: TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV , BU508A Rev260405D Continental Device India Limited Data Sheet Page 1 of 3 BU508A TO- 3PN Non Isolated Plastic Package BU508A Rev260405D Continental Device India Limited Data Sheet Page 2 of 3 Notes BU508A TO- 3PN Non Isolated Plastic Package Disclaimer The product , : email @cdil.com www.cdilsemi.com BU508A Rev260405D Continental Device India Limited Data Sheet


Original
PDF BU508A C-120 BU508A Rev260405D c 2579 power transistor transistor BU508A Data- sheet TRANSISTOR BU508A c 2579 transistor using of damper in Horizontal Output Transistor transistor 800V 1A
Not Available

Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b lE bb53c l31 DDEflEbM DEI BU508A BU508D y v I> SILICON , A 7 MHz 125 pF « a p x N AMER PHI LIP S/DISCRETE b^E T m > BU508A BU508D , ; typical value of t f = 0.7 ps. ( December 1991 75 N A PIER PHILIPS/DISCRETE BU508A BU508D k , ( BU508A ). + 150 V nominal adjust fo r Iqm 2 nF 7 Z2 4 3 6 S Fig. 6 Switching times test circu , power transistor (1) (2) I II b^E T m > IAPX bbSBRBl OOB&Bbfl 777 BU508A BU508D


OCR Scan
PDF bb53c BU508A BU508D OT93A BU508D 7Z88402 7Z8S40-
BU208A

Abstract: GC630 IS0WATT218
Text: BU208A BU508A / BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . STM PREFERRED , -65 to 150 °c 1/8 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 R lh ] - c a s e T O -2 1 , -218/ISOW ATT218) BU208A / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation Voltage , ) 5 J BU208A / BU508A / BU508AFI Figure 1 : Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI TO-3 MECHANICAL DATA mm DIM. MIN. A B C D E G N P R U V 11.00 0.97 1.50


OCR Scan
PDF BU208A BU508A/BU508AFI ISOWATT218 BU208A, BU508A BU508AFI SC06960 GC630 IS0WATT218
BU508A

Abstract: SOWATT218
Text: X = T SGS-THOMSON M fg im iO T O K S BU208A BU508A / BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN , COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa , 1997 199 BU208A / BU508A / BU508AFI THERMAL DATA TO-3 Rthj-case Therm al R esistance Jun , 200 SGS-THOMSON BU208A / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation , Load (see figure 1} *7 # n a m n M m rrz SGS-THOMSON 3/4 201 BU208A / BU508A / BU508AFI


OCR Scan
PDF BU208A BU508A/BU508AFI ISOWATT218 BU208A, BU508A BU508AFI O-218 SOWATT218 O-218/ISOWATT218) SOWATT218
BU508A

Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU508A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 , Semiconductor Product Specification BU508A Silicon NPN Power Transistors CHARACTERISTICS Tj , tolerance:±0.10 mm) 3 BU508A -


Original
PDF BU508A 100mA; BU508A
BU508A

Abstract: BU508
Text: Inchange Semiconductor Product Specification BU508A Silicon NPN Power Transistors DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 , Thermal resistance junction case Inchange Semiconductor Product Specification BU508A Silicon , BU508A Silicon NPN Power Transistors PACKAGE OUTLINE TOR UC OND IC SEM GE


Original
PDF BU508A BU508A BU508
BU508 TRANSISTOR equivalent

Abstract: BU508 equivalent BU508 TRANSISTOR specification BU508 BU508A equivalent bu508d equivalent BU508A TRANSISTOR equivalent 4229P-L00-3C8 BU508A BU508 CIRCUITS
Text: Width = 5 ms, Duty Cycle s 10%. 'ransistors "D" SUFFIX BU508 BU508D BU508A BU508AD POWER TRANSISTORS , , BU508D, BU508A , BU508AD r^ 33-/3 BASE DRIVE: The Key to Performance By now, the concept of controlling , MOTOROLA SC XSTRS/R F 12E D J b3b7254 0GÔ4ÔE1 5 | BU508, BU508D, BU508A , BU508AD r-33-ö 1000 2000 t , 4.5 Adc, Ib =■2 Adc) BU508A , AD VcE(sat) — — 3 1 Vdc Base Emitter Saturation Voltage (lc = 4.5 , the test apparatus is required. 3-374 MOTOROLA SC XSTRS/R F 12E D | b3b?2S4 BU508, BU508D, BU508A


OCR Scan
PDF b3b72S4 O-218 O-218AC BU508 TRANSISTOR equivalent BU508 equivalent BU508 TRANSISTOR specification BU508 BU508A equivalent bu508d equivalent BU508A TRANSISTOR equivalent 4229P-L00-3C8 BU508A BU508 CIRCUITS
BU508A

Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU508A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 , Semiconductor Product Specification BU508A Silicon NPN Power Transistors CHARACTERISTICS Tj , tolerance:±0.10 mm) 3 BU508A -


Original
PDF BU508A 100mA; BU508A
BU4508DX equivalent

Abstract: ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
Text: PHILIPS "BUJ202, BUJ301" BU508ADF SAMSUNG BU508DW BU508AF SAMSUNG BU508AX BU508DF , BU508 ST (SGS-THOMSON) BU508AW BU508A ST (SGS-THOMSON) BU508AW BU508AD ST (SGS-THOMSON) BU508DW BU508AFI ST (SGS-THOMSON) BU508AX BU508AXI ST (SGS-THOMSON) BU4508AZ , TELEFUNKEN BU508AW BU508A TELEFUNKEN BU508AW BU508AD TELEFUNKEN BU508DW BU508D , MATSUSHITA BU2708DX 2SD2523 MATSUSHITA BU2720DX BU508 MOTOROLA BU508AW BU508A


Original
PDF 2SC4589 BU4525AF 2SC4692 BU4530AL 2SC4742 BU2508DW 2SC4743 BU4508AX 2SC4744 BU4508DF BU4508DX equivalent ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: 2SD124 SGS13003 MJE13005 MJE13005 MJE13005 MJE13007 TIP41A BU508A BUW34 MJE13009 TIP41B MJE13009 BUL381/382 MJE13009 TIP31B TIP41B TIP47 MJE13005 BU508A BU508A BUL410 2N6059 2N6059 , SGS13003 MJE13005 MJE13005 MJE13005 MJE13007 TIP41A BU508A BUW34 MJE13009 TIP41B MJE13009 BUL381/382 MJE13009 TIP31C TIP41B TIP47 MJE13005 BU508A BU508A BUL410 2N6059 2N6059 2N3716 BDW51C


Original
PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Supplyframe Tracking Pixel