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BU4070B ROHM Semiconductor XOR Gate, 4000/14000/40000 Series, 4-Func, 2-Input, CMOS, PDIP14, ROHS COMPLIANT, DIP-14
BU407 ON Semiconductor Power 7A 150V DEF NPN, 1200-BLKBG
BU4070BF-E2 ROHM Semiconductor XOR Gate, 4000/14000/40000 Series, 4-Func, 2-Input, CMOS, PDSO14, ROHS COMPLIANT, SOP-14
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BU407 Motorola Semiconductor Products Bristol Electronics 138 $0.75 $0.28
BU407 STMicroelectronics Avnet - - -
BU407 STMicroelectronics Bristol Electronics 34 - -
BU407 Central Semiconductor Corp Avnet - - -
BU407 ON Semiconductor Rochester Electronics 50 $0.34 $0.28
BU407 Thomas & Betts Sager - $32.64 $29.59
BU4070B ROHM Semiconductor Avnet - - -
BU4070BF-E2 ROHM Semiconductor Avnet - - -
BU407G ON Semiconductor Rochester Electronics 230 $0.42 $0.34
GBU407 D2G Taiwan Semiconductor Chip1Stop 986 $0.56 $0.43
GBU407-04 X0 Taiwan Semiconductor Chip1Stop 500 $0.99 $0.26
PBU407 Lite-On Semiconductor Corporation Bristol Electronics 50 $2.70 $1.69

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BU407 datasheet (94)

Part Manufacturer Description Type PDF
BU407 Bourns NPN SILICON POWER TRANSISTORS Original PDF
BU407 Continental Device India NPN Plastic Power Transistors Original PDF
BU407 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BU407 On Semiconductor NPN SILICON POWER TRANSISTORS Original PDF
BU407 Philips Semiconductors Silicon Diffused Power Transistor Original PDF
BU407 Power Innovations NPN SILICON POWER TRANSISTORS Original PDF
BU407 Sinyork Mini size of Discrete semiconductor elements Original PDF
BU407 STMicroelectronics HIGH CURRENT NPN SILICON TRANSISTOR Original PDF
BU407 USHA NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. Original PDF
BU407 Various Russian Datasheets Transistor Original PDF
BU407 Wing Shing Computer Components SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) Original PDF
BU407 Boca Semiconductor NPN POWER TRANSISTOR Scan PDF
BU407 Central Semiconductor NPN Silicon Power Transistor, TO-220 Scan PDF
BU407 Central Semiconductor Power Transistors Scan PDF
BU407 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BU407 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
BU407 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
BU407 Mospec POWER TRANSISTORS(7A,150-200V,60W) Scan PDF
BU407 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BU407 Motorola European Master Selection Guide 1986 Scan PDF

BU407 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1978 - BU406

Abstract: bu407
Text: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector , ) Emitter-base voltage Continuous collector current BU407 BU406 BU406 BU406 SYMBOL V CBO VCEX V CEO VEB ICM Ptot Tstg Tj IB IC VALUE 400 330 400 330 200 150 6 7 4 UNIT V V V V A A A BU407 BU407 Continuous , , BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless , and 3) f = 1 MHz f = 1 MHz (see Note 4) 6 60 12 20 1 1.2 V V MHz pF TC = 150°C TC = 150°C BU406 BU407


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PDF BU406, BU407 O-220 BU406 BU407 TCD124AC
BU406

Abstract: BU407 transistor BU406 bu406 ru 8U407
Text: Silicon diffused power transistors bbS3T31 002ÖE27 154 HAPX Product specification BU406/ BU407 BU407. , .8 Base-emitter voltage as a function of base current, typical values. vCEsat (VI BU407. Fig , _Product specification Silicon diffused power transistors BU406/ BU407 DESCRIPTION High-voltage , voltage peak value; BU406 Vbe = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 200 V BU407 150 V VoE». collector-emitter saturation voltage 1 V >0 collector current DC


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PDF BU406/BU407 O-220 BU406 BU407 BU406 -BU406 0D2fl22cl BU407 transistor BU406 bu406 ru 8U407
BU406

Abstract: bu407 Y parameters of transistors
Text: BU406, BU407 NPN SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK , otherwise noted) RATING Collector-base voltage ( lE = 0) BU406 BU407 BU406 BU407 BU406 BU407 V CEO V CEX , all parameters. BU406, BU407 NPN SILICON POWER TRANSISTORS AUG UST 1978 - REVISED MARCH 1997 , A lB = 0 > O MIN 140 BU406 BU407 BU406 BU407 TYP MAX UNIT V breakdown voltage 5 , C Û > II LU C Û > II LU C Û O O Tc Tc = = 150°C 150°C BU406 BU407 Em itter cut-off


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PDF BU406, BU407 T0-220 BU406 BU407 Y parameters of transistors
bu406

Abstract: No abstract text available
Text: PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , =100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Collector Cut off Current TEST CONDITION Tc=150ºC VCE=250V, VBE , Limited Data Sheet BU406 BU407 MIN MAX UNIT V 200 150 5.0 5.0 0.1 0.1 V mA


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PDF BU406 BU407 O-220 C-120 281102E bu406
1978 - BU406

Abstract: No abstract text available
Text: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , Operating junction temperature range Storage temperature range NOTE SYM B O L BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX V CEO VALUE 400 330 400 330 200 150 UNIT V V V VEB , , BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless , VBE = 0 BU407 5 5 Collector-emitter VCE = 250 V VBE = 0 BU406 0.1 cut-off


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PDF BU406, BU407 O-220 SAD124AA BU406 BU406
regulator 4468

Abstract: transistor BU406 BU406 BU407 Transistor 80139 flyback transformer philips 12vk
Text: Philips Semiconductors ^^ | | Product specification Silicon diffused power transistors BU406/ BU407 BU407. , 0.1 1 10 IC 100 BU407. IC/1B = 10;T, = 25 o C. Fig , , motor control systems, etc, PINNING BU406/ BU407 T- // QUICK REFERENCE DATA PIN DESCRIPTION 1 , peak value; BU406 VB6 = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 20Q V BU407 150 V VcEsai collector-emitter saturation voltage* 1 V lo collector current DC-value


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PDF O-220 BU406/BU407 BU406 BU407 BU406 DU406 711002t. O-220AB. regulator 4468 transistor BU406 BU407 Transistor 80139 flyback transformer philips 12vk
2011 - BU407

Abstract: No abstract text available
Text: BU406G TO−220AB (Pb−Free) 50 Units / Rail BU407 TO−220AB 50 Units / Rail BU407G , BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collector−Emitter Voltage BU406 BU407 VCEO 200 150 Vdc Collector−Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector−Base Voltage BU406 BU407 VCBO 400 330 Vdc VEBO , VOLTAGE (VOLTS) TC = 25°C 200 BU407 BU406 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND


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PDF BU406, BU407 BU406 BU406/D BU407
BU406

Abstract: BU407
Text: SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors , base BU407 VEBO V 330 BU406 Collector-emitter voltage Emitter-base voltage UNIT 400 Open emitter BU407 VCEO VALUE V 150 Open collector 6 V IC Collector current , BU407 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , . MAX UNIT 200 IC=100mA ; IB=0 BU407 V 150 VCEsat Collector-emitter saturation


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PDF BU406 BU407 O-220C BU406 BU407
BU406

Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors
Text: , BU407 N-P-N SILICON POWER TRANSISTORS T-S3-U OCTOBER 1982 - REVISED OCTOBER 1984 • 60 Wat 25°C Case , °C case temperature (unless otherwise noted) BU406 BU407 Collector-base voltage 400 V 330 V , |flTbl7Bt: DQ3titi3ti 5 iNSTR (OPTDT BU406, BU407 N-P-N SILICON POWER TRANSISTORS 62C 36636 D T , , vbe = o, tc=150°c 1 VCE = 330 V, VBE = o bu407 5 VCE = 200 V, VBE = o 0.1 VCE = 200 V, Vbe , €¢ DALLAS. TEXAS 75265 TEXAS INSTR -COPTO} ^ »E |äc]t317at, D03titi37 4 62C 36637 D BU406, BU407


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PDF GG3bb35 BU406, BU407 110-Degree to-220ab BU406 BU407 300fis, 003bb3T N-P-N SILICON POWER TRANSISTORS t317 texas transistors
2009 - transistor BU406

Abstract: BU406G BU406 BU407 BU407G
Text: ) 50 Units / Rail BU407 TO-220AB 50 Units / Rail BU407G TO-220AB (Pb-Free) 50 Units , BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collector-Emitter Voltage Rating BU406 BU407 VCEO 200 150 Vdc Collector-Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector-Base Voltage BU406 BU407 VCBO 400 330 Vdc , 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC = 25°C 200 BU407 BU406 0.1


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PDF BU406, BU407 BU406 BU406/D transistor BU406 BU406G BU406 BU407 BU407G
2000 - Not Available

Abstract: No abstract text available
Text: Current Collector-Emitter Saturation Voltage : BU407 : BU407H Base-Emitter Saturation Voltage : BU407 : BU407H Current Gain Bandwidth Product Turn OFF Time : BU407 : BU407H VBE(sat) fT tOFF ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU407 /407H Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU407 /407H Package , BU407 /407H BU407 /407H High Voltage Switching · Use In Horizontal Deflection Output Stage 1


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PDF BU407/407H O-220
BU407

Abstract: BU406 1462, TRANSISTOR
Text: BU406- BU407- 5 1 2 5 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two , Voltage - VCEV = 330 V (Min.) - BU407 = 400 V (Min.) - BU406 * Low Saturation Voltage VCEJsafl=10V(Max) @'c=5 0A * Fast Switching Speed: tf=0.75 us (Max) MAXIMUM RATINGS NPN BU406 BU407 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VcEO 200 150 V Collector-Emitter Voltage VcEV 400 330 , 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90 BU406, BU407 NPN ELECTRICAL CHARACTERISTICS


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PDF BU407 BU406 BU406 BU407 BU406- BU407- 150oC 1462, TRANSISTOR
Not Available

Abstract: No abstract text available
Text: v CE$at (V ) I" 7 0,8 °0,1 1 1 0 ,c(A) 100 BU407. IC/IB = 10; Tj = 25 , Product specification Silicon diffused power transistors DESCRIPTION BU406/ BU407 QUICK , collector-emitter saturation voltage 1 V peak value; VB = 0 £ BU407 base 2 V 330 BU407 DESCRIPTION 400 BU406 PINNING PIN UNIT BU406 VcESM MAX , 0023223 5CH « A P X tRE J > Product specification Philips Semiconductors BU406/ BU407


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PDF BU406/BU407 O-220 BU407 BU406 BU407. 2fl22fl bbS3131
1978 - 2N5337

Abstract: 2N6191 BU406 BU407 BY205 TIP31 TIP32 TIP32 applications transistor TIP31
Text: BU406, BU407 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q , voltage (V BE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 BU406 BU407 VCEX VCEO 400 330 400 330 200 150 UNIT V V V VEB Peak collector current , BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical , VBE = 0 BU406 V CE = 330 V ICES VBE = 0 BU407 5 Collector-emitter V CE = 250 V


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PDF BU406, BU407 O-220 BU406 2N5337 2N6191 BU406 BU407 BY205 TIP31 TIP32 TIP32 applications transistor TIP31
1978 - Not Available

Abstract: No abstract text available
Text: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , current BU407 V CBO E T E L O S B O Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 VCEX V CEO VEB IC VALUE , subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical , 400 V V CE(sat) VBE(sat) ft Cob BU407 5 Collector-emitter VCE = 250 V VBE = 0


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PDF BU406, BU407 O-220 BU406
1978 - BU407

Abstract: transistor BU406 2N6191 2N5337 BU406 BY205 TIP31 TIP32
Text: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , VCE = 400 V VCE(sat) VBE(sat) ft Cob BU407 5 Collector-emitter VCE = 250 V VBE =


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PDF BU406, BU407 O-220 BU406 BU407 transistor BU406 2N6191 2N5337 BU406 BY205 TIP31 TIP32
Not Available

Abstract: No abstract text available
Text: Saturation Voltage: VQE(sat) = 1 V (max) @ 5 A Packaged in Compact JEDEC T O -220A B BU406 BU407 7 , VCEO VCEV VCBO Vebo ic BU406 200 400 400 6 7 10 15 4 60 0.48 BU407 150 330 330 Unit Vdc Vdc , EB = 6 Vdc, Iq = 0) BU406, BU407 'e b o BU406 BU407 v CEO(sus) 200 150 - - Vdc Symbol Min , (continued) REV 2 © M otorola, Inc. 1995 ($ J M O T O R O L A BU406 BU407 ELECTRICAL , Operating Area 2 Motorola Bipolar Power Transistor Device Data BU406 BU407 PACKAGE DIMENSIONS N


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PDF BU406/D -220A BU406 BU407 21A-06 O-220AB
BU406

Abstract: BU407 HI SPEED, HI CURRENT, TO-220, TRANSISTOR
Text: -Thermally limited DC S BU406- BU407- 5 1 2 5 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE , Voltage - VCEV = 330 V (Min.) - BU407 = 400 V (Min.)-BU406 * Low Saturation Voltage VCEJsafl=10V(Max , ://www.bocasemi.com NPN BU406 BU407 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VcEO 200 150 V , 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90 BU406, BU407 NPN ELECTRICAL CHARACTERISTICS , Collector - Emitter Sustaining Voltage (1) (lc = 100 mA, lB = 0) BU406 BU407 VCEO(SUS) 200 150 V Collector


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PDF BU407 -BU406 BU406 BU407 150oC HI SPEED, HI CURRENT, TO-220, TRANSISTOR
1978 - BU406

Abstract: transistor BU406 to220 5 lead plastic TIP32 TIP31 BY205 BU407 2N6191 2N5337 TRANSISTOR TIP31
Text: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , VCE = 400 V VCE(sat) VBE(sat) ft Cob BU407 5 Collector-emitter VCE = 250 V VBE =


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PDF BU406, BU407 O-220 BU406 BU406 transistor BU406 to220 5 lead plastic TIP32 TIP31 BY205 BU407 2N6191 2N5337 TRANSISTOR TIP31
2002 - transistor BU406

Abstract: BU407 BU406 IC7A
Text: PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Tc=150ºC VCE=250V, VBE=0 VCE=200V, VBE=0 BU406 BU407 Collector Cut off Current TEST , Sheet Page 1 of 4 PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package


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PDF BU406 BU407 O-220 C-120 281102E transistor BU406 BU407 BU406 IC7A
BU406

Abstract: BU407 transistor BU406
Text: Certified Manufacturer NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package , VCEO Collector Emitter Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage , =200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Tc=150ºC VCE=250V, VBE=0 VCE=200V, VBE=0 BU406 BU407 Collector Cut off Current TEST CONDITION MIN MAX UNIT V 200 150 V 5.0 5.0 , BU406 BU407 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise


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PDF BU406 BU407 O-220 C-120 281102E BU406 BU407 transistor BU406
2011 - BU40x

Abstract: No abstract text available
Text: ORDERING INFORMATION Device BU406 BU406G BU407 BU407G *For additional information on our Pb-Free strategy , BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Storage Junction Temperature Storage BU406 BU407 BU406 BU407 BU406 BU407 Symbol VCEO VCEV VCBO VEBO IC , ) (IC = 100 mAdc, IB = 0) BU406 BU407 VCEO(sus) ICES Collector Cutoff Current (VCE = Rated VCEV, VBE = 0 , Current (VEB = 6 Vdc, IC = 0) mAdc 5 0.1 1 1 BU406, BU407 IEBO mAdc ON CHARACTERISTICS (Note 1


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PDF BU406, BU407 BU406 BU406/D BU40x
Not Available

Abstract: No abstract text available
Text: aturation Voltage : BU407 : BU407H Base Em itter Saturation Voltage : BU407 VBE(sat) : BU407H C , , lB= 0.5A 0.75 lc = 5A, lB= 0.8A 0.4 : BU407 : BU407H FAIRCHILD S EM IC O N D U C TO R © 19 99 Fairchild Sem ico nd ucto r C orporation tm 10 V MHz US US BU407 /407H , BU407 /407H NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage C


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PDF BU407/407H
Not Available

Abstract: No abstract text available
Text: § 6 S-THOMSON 3 QE B U 407 BU407H ® HORIZONTAL TV DEFLECTORS DESCRIPTION The BU407 , Min. for BU407 lc = 5 A for BU407H l c = 5 A V ßE(sat)* fi to ff* * Base-emltter Saturation Voltage for BU407 lc = 5 A for BU407H lc = 5 A Transition Frequency lc =0.5 A , – BU407-BU407H Base-emitter Saturation Voltage. Storage Time. T—33—11 Collector Cutoff Current , 0026547 APPLICATION INFORMATION S b ■^ _ BU407-BU407H S -T


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PDF 7qgqB37 00Sfl5M3 BU407H BU407 BU407H T0-220 BU407-BU407H BU407 19x5x8
1998 - npn switching transistor Ic 5A

Abstract: bu407 200V transistor npn 5a 407H BU407-BU407H 5A transistor BU407 transistor transistor Vbe 1 200v 5a transistor
Text: : BU407 : BU407H Base Emitter Saturation Voltage : BU407 VBE(sat) : BU407H V MHz Current , 0.75 uS IC = 5A, IB = 0.8A 0.4 uS : BU407 : BU407H 10 BU407 /407H NPN , BU407 /407H NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO 330 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage


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PDF BU407/407H O-220 BU407 BU407H npn switching transistor Ic 5A bu407 200V transistor npn 5a 407H BU407-BU407H 5A transistor BU407 transistor transistor Vbe 1 200v 5a transistor
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