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Part Manufacturer Description Datasheet Download Buy Part
BU4069UB ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDIP14, ROHS COMPLIANT, DIP-14
BU4066BCFV-E2 ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDSO14, SSOP-14
BU4069UBFV-E2 ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDSO14, ROHS COMPLIANT, SSOP-14
BU4069UBF-E2 ROHM Semiconductor Inverter, 4000/14000/40000 Series, 6-Func, 1-Input, CMOS, PDSO14, ROHS COMPLIANT, SOP-14
BU4066BC ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDIP14, ROHS COMPLIANT, DIP-14
BU4066BCF-E2 ROHM Semiconductor SPST, 4 Func, 1 Channel, CMOS, PDSO14, SOP-14
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BU-4061-C-24-2 Mueller Electric Company element14 Asia-Pacific 18 $25.11 $22.52
BU-4061-C-24-2 Mueller Electric Company Newark element14 18 $21.71 $19.48
BU-4061-C-24-2 Mueller Electric Company Farnell element14 18 £17.88 £16.53
BU-4061-C-24-2 Mueller Electric Company Allied Electronics & Automation - $20.29 $20.29
BU-4061-M-39-0 Mueller Electric Company Bisco Industries 40 - -
BU-4061-M-39-0 Mueller Electric Company Master Electronics 1 $21.55 $15.19
BU-4061-M-39-2 Mueller Electric Company Master Electronics 6 $21.55 $15.19
BU-4061-M-39-2 Mueller Electric Company Bisco Industries 40 - -
BU-4062-C-24-0 Mueller Electric Company element14 Asia-Pacific 16 $25.20 $22.60
BU-4062-C-24-0 Mueller Electric Company Farnell element14 16 £17.88 £16.53
BU-4062-C-24-0 Mueller Electric Company Newark element14 16 $21.79 $19.55
BU-4062-C-24-0 Mueller Electric Company Allied Electronics & Automation - $20.36 $20.36
BU-4062-C-24-2 Mueller Electric Company Allied Electronics & Automation 2 $20.36 $20.36
BU-4062-C-24-2 Mueller Electric Company element14 Asia-Pacific 16 $25.20 $22.60
BU-4062-M-39-0 Mueller Electric Company Master Electronics 10 $21.62 $15.24
BU-4062-M-39-2 Mueller Electric Company Master Electronics 10 $21.62 $15.24
BU-4062-M-39-2 Mueller Electric Company Allied Electronics & Automation - $20.93 $20.93
BU-4062-N-39-2 Mueller Electric Company Allied Electronics & Automation - $8.20 $7.14
BU406 ON Semiconductor Avnet 546 $0.94 $0.34
BU406 ON Semiconductor Newark element14 689 $0.92 $0.36
BU406 SPC Multicomp Farnell element14 3,379 £2.20 £0.69
BU406 SPC Multicomp Newark element14 3,494 $1.50 $0.55
BU406 ON Semiconductor Future Electronics - $0.67 $0.51
BU406 STMicroelectronics Future Electronics - $0.49 $0.49
BU406 STMicroelectronics Bristol Electronics 198 $0.75 $0.28
BU406 STMicroelectronics Bristol Electronics 350 - -
BU406 Samsung Semiconductor Bristol Electronics 51 $0.75 $0.49
BU406 Motorola Semiconductor Products Bristol Electronics 6 - -
BU406 Thomas & Betts Sager - $7.04 $6.36
BU406 ON Semiconductor RS Components 1,790 £0.64 £0.36
BU406 ON Semiconductor RS Components 320 £0.72 £0.36
BU406 Fairchild Semiconductor Corporation New Advantage Corporation 4,320 $0.63 $0.57
BU406 SPC Multicomp element14 Asia-Pacific 3,433 $1.22 $0.74
BU406 ON Semiconductor Chip1Stop 2,350 $0.54 $0.36
BU406 STMicroelectronics Chip One Exchange 250 - -
BU406 95 Chip One Exchange 250 - -
BU406 pi ComS.I.T. 1,200 - -
BU4066BCF-E2 ROHM Semiconductor RS Components 80 £0.44 £0.41
BU4066BCF-E2 ROHM Semiconductor Farnell element14 - £0.57 £0.25
BU4066BCF-E2 ROHM Semiconductor Chip1Stop 2,261 $0.29 $0.27
BU4066BCFV ROHM Semiconductor Chip One Exchange 2,095 - -
BU4069UB ROHM Semiconductor Chip1Stop 200 $2.63 $2.49
BU4069UBF-E2 ROHM Semiconductor Chip1Stop 7,940 $0.31 $0.31
BU406D STMicroelectronics Bristol Electronics 5 - -
BU406G ON Semiconductor Avnet 750 €0.67 €0.43
BU406G ON Semiconductor Avnet 900 $0.44 $0.42
BU406G ON Semiconductor Future Electronics - $0.53 $0.42
BU406G ON Semiconductor ComS.I.T. 100 - -
BU406G ON Semiconductor Rochester Electronics 23,598 $0.69 $0.56
BU406G ON Semiconductor TME Electronic Components 597 $1.06 $0.61
BU406T Fairchild Semiconductor Corporation Chip One Exchange 45 - -
BU406TU ON Semiconductor Avnet 4,000 $0.52 $0.36
BU406TU Fairchild Semiconductor Corporation Schukat electronic 3,000 €0.38 €0.25
BU406TU Fairchild Semiconductor Corporation Rochester Electronics 153,995 $0.49 $0.40
BU406TU ON Semiconductor TME Electronic Components 71 $0.80 $0.42
GBU406 Diodes Incorporated Future Electronics - $1.38 $0.90
GBU406 Zetex / Diodes Inc RS Components 480 £0.67 £0.51
GBU406 Diodes Incorporated New Advantage Corporation 1,960 $0.77 $0.70
GBU406 Diodes Incorporated Avnet 930,213 $0.87 $0.53
GBU406 Surge Components Inc Future Electronics - $0.27 $0.22
GBU406 C2G Taiwan Semiconductor Schukat electronic - €0.58 €0.27
GBU406 D2 Taiwan Semiconductor RS Components 380 £0.28 £0.23
GBU406 D2 Taiwan Semiconductor Chip1Stop 287,070 $0.56 $0.33
GBU406D2 Taiwan Semiconductor Master Electronics 700 $0.63 $0.29
GBU406L SPC Multicomp Newark element14 775 $0.57 $0.32
GBU406L SPC Multicomp element14 Asia-Pacific 775 $1.64 $0.36
GBU406L SPC Multicomp Farnell element14 775 £1.12 £0.32
KBU406G T0 Taiwan Semiconductor Schukat electronic 830 €0.72 €0.40

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BU406 datasheet (156)

Part Manufacturer Description Type PDF
BU406 Bourns NPN SILICON POWER TRANSISTORS Original PDF
BU406 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
BU406 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BU4-06 Frontier Electronics 4A SILICON SINGLE-PHASE BRIDGE RECTIFIER Original PDF
BU406 Motorola 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS Original PDF
BU406 On Semiconductor BU406 - TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB, CASE 221A-09, 3 PIN, BIP General Purpose Power Original PDF
BU406 On Semiconductor NPN Power Transistors Original PDF
BU406 Philips Semiconductors Silicon Diffused Power Transistor Original PDF
BU406 Power Innovations NPN SILICON POWER TRANSISTORS Original PDF
BU406 Sinyork Mini size of Discrete semiconductor elements Original PDF
BU406 STMicroelectronics SILICON NPN SWITCHING TRANSISTOR Original PDF
BU406 STMicroelectronics NPN Epitaxial Silicon Transistor Original PDF
BU406 USHA NPN, horizontal deflection transistor. For horizontal deflection output stages of TVs ahd CRTs. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. Original PDF
BU406 Various Russian Datasheets Transistor Original PDF
BU406 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) Original PDF
BU406 Boca Semiconductor NPN POWER TRANSISTOR Scan PDF
BU406 Central Semiconductor NPN Silicon Power Transistor, TO-220 Scan PDF
BU406 Central Semiconductor Power Transistors Scan PDF
BU406 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BU406 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
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BU406 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BU406

Abstract: BU407 transistor BU406 bu406 ru 8U407
Text: 3 V into its flyback position. Fig.3 Waveforms for fall, storage and turn-off times. "FE BU406. Fig.4 DC current gain, typical values. VcEsat (V) BU406. Ic/lg =10; T,= 25 °C. Fig , _Product specification Silicon diffused power transistors BU406 /BU407 DESCRIPTION High-voltage , voltage peak value; BU406 Vbe = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 200 V BU407 150 V VoE». collector-emitter saturation voltage 1 V >0 collector current DC


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PDF BU406/BU407 O-220 BU406 BU407 BU406 -BU406 0D2fl22cl BU407 transistor BU406 bu406 ru 8U407
1978 - BU406

Abstract: bu407
Text: BU406 , BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector , ) Emitter-base voltage Continuous collector current BU407 BU406 BU406 BU406 SYMBOL V CBO VCEX V CEO VEB ICM Ptot , %. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406 , and 3) f = 1 MHz f = 1 MHz (see Note 4) 6 60 12 20 1 1.2 V V MHz pF TC = 150°C TC = 150°C BU406 BU407 BU406 BU407 BU406 BU407 TEST CONDITIONS MIN 140 5 5 0.1 0.1 1 1 1 mA mA TYP MAX UNIT V VCE = 400 V


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PDF BU406, BU407 O-220 BU406 BU407 TCD124AC
bu406

Abstract: No abstract text available
Text: www.cdilsemi.com BU406_407 Rev_1 281102E Continental Device India Limited Data Sheet Page 4 of 4 , PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , =100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Collector Cut off Current TEST CONDITION Tc=150ºC VCE=250V, VBE


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PDF BU406 BU407 O-220 C-120 281102E bu406
BU408

Abstract: BU406
Text: \ BU406 BU406H /BU408 30E » HORIZONTAL TV DEFLECTORS DESCRIPTION The BU406 , BU406H , and BU408 are , Ti Junction Temperature 150 °C December 1988 1/5 285 BU406 / BU406H /BU408 M , = 5A for BU406H l0 = 5 A for BU408 le = 6A for BU406 lo = 5A for BU406H le = 5A for BU408 , SGS-THOMSON “ 7 # mesBJEsmswces A m TWSB? BU406 / BU406H /BU408 Q02Ô533 b ■Base-emitter , ® _7J2g5 3 7 0055535 APPLICATION INFORMATION BU406 / BU406H /BU408 T 3 0E D S G S-TH0MS0N


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PDF BU406 BU406H/BU408 BU406, BU406H, BU408 O-220 BU406H BU408 100mA BU406
BU406

Abstract: bu407 Y parameters of transistors
Text: BU406 , BU407 NPN SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK , otherwise noted) RATING Collector-base voltage ( lE = 0) BU406 BU407 BU406 BU407 BU406 BU407 V CEO V CEX , all parameters. BU406 , BU407 NPN SILICON POWER TRANSISTORS AUG UST 1978 - REVISED MARCH 1997 , A lB = 0 > O MIN 140 BU406 BU407 BU406 BU407 TYP MAX UNIT V breakdown voltage 5 , C Û > II LU C Û > II LU C Û O O Tc Tc = = 150°C 150°C BU406 BU407 Em itter cut-off


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PDF BU406, BU407 T0-220 BU406 BU407 Y parameters of transistors
BU406

Abstract: BU407
Text: SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors , ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BU406 VCBO Collector-base voltage 200 Open base BU407 VEBO V 330 BU406 Collector-emitter voltage Emitter-base voltage UNIT 400 , to case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification BU406 , VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BU406 MIN TYP


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PDF BU406 BU407 O-220C BU406 BU407
2009 - transistor BU406

Abstract: BU406G BU406 BU407 BU407G
Text: Device Package Shipping BU406 TO-220AB 50 Units / Rail BU406G TO-220AB (Pb-Free , BU406 , BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collector-Emitter Voltage Rating BU406 BU407 VCEO 200 150 Vdc Collector-Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector-Base Voltage BU406 BU407 VCBO 400 330 Vdc , Components Industries, LLC, 2009 May, 2009 - Rev. 8 1 Publication Order Number: BU406 /D 10 0.1


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PDF BU406, BU407 BU406 BU406/D transistor BU406 BU406G BU406 BU407 BU407G
1978 - BU406

Abstract: No abstract text available
Text: BU406 , BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , Operating junction temperature range Storage temperature range NOTE SYM B O L BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX V CEO VALUE 400 330 400 330 200 150 UNIT V V V VEB , %. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406 , mA MIN IB = 0 TYP MAX 140 V VCE = 400 V VBE = 0 BU406 VCE = 330 V ICES


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PDF BU406, BU407 O-220 SAD124AA BU406 BU406
Not Available

Abstract: No abstract text available
Text: and turn-off times. 77QR AR A 0 ,1 1 1 0 ,q IAI I 100 BU406. 1/10 10:1 , Product specification Silicon diffused power transistors DESCRIPTION BU406 /BU407 QUICK , BU407 DESCRIPTION 400 BU406 PINNING PIN UNIT BU406 VcESM MAX , 0023223 5CH « A P X tRE J > Product specification Philips Semiconductors BU406 /BU407 , 134). MIN. MAX. UNIT - 400 V - 330 V BU406 _ 200 V BU407 -


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PDF BU406/BU407 O-220 BU407 BU406 BU407. 2fl22fl bbS3131
2011 - BU407

Abstract: No abstract text available
Text: BU406 , BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collector−Emitter Voltage BU406 BU407 VCEO 200 150 Vdc Collector−Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector−Base Voltage BU406 BU407 VCBO 400 330 Vdc VEBO , reliability. ORDERING INFORMATION Device Package Shipping BU406 TO−220AB 50 Units / Rail BU406G TO−220AB (Pb−Free) 50 Units / Rail BU407 TO−220AB 50 Units / Rail BU407G


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PDF BU406, BU407 BU406 BU406/D BU407
regulator 4468

Abstract: transistor BU406 BU406 BU407 Transistor 80139 flyback transformer philips 12vk
Text: .3 Waveforms for fail, storage and turn-off times. hFE I 0,1 1 BU406. Vce=5V;T,= 25°C. Fig.4 DC current gain, typical values. vCEsat (VI BU406. Ic/Ia = 10; T, = 25 °C. Fig.5 Collector-emitter saturation , , motor control systems, etc, PINNING BU406 /BU407 T- // QUICK REFERENCE DATA PIN DESCRIPTION 1 , peak value; BU406 VB6 = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 , Silicon diffused power transistors BU406 /BU407 LIMITING VALUES In accordance with the Absolute Maximum


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PDF O-220 BU406/BU407 BU406 BU407 BU406 DU406 711002t. O-220AB. regulator 4468 transistor BU406 BU407 Transistor 80139 flyback transformer philips 12vk
2000 - transistor BU406

Abstract: BU406 BU406H BU408
Text: Voltage : BU406 : BU406H : BU408 Max. 5 100 1 Units mA µA mA VBE = 6V, IC = 0 1 mA , Saturation Voltage : BU406 : BU406H : BU408 IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A , Turn OFF Time VBE(sat) : BU406 : BU406H : BU408 ©2000 Fairchild Semiconductor International , BU406 /406H/408 BU406 /406H/408 High Voltage Switching · Use In Horizontal Deflection Output , µs µs Rev. A, February 2000 BU406 /406H/408 Typical Characteristics 5 00m A IB =


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PDF BU406/406H/408 O-220 transistor BU406 BU406 BU406H BU408
1978 - BU407

Abstract: transistor BU406 2N6191 2N5337 BU406 BY205 TIP31 TIP32
Text: BU406 , BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406 , BU407 NPN SILICON POWER TRANSISTORS , 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC =


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PDF BU406, BU407 O-220 BU406 BU407 transistor BU406 2N6191 2N5337 BU406 BY205 TIP31 TIP32
1978 - BU406

Abstract: transistor BU406 to220 5 lead plastic TIP32 TIP31 BY205 BU407 2N6191 2N5337 TRANSISTOR TIP31
Text: BU406 , BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406 , BU407 NPN SILICON POWER TRANSISTORS , 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC =


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PDF BU406, BU407 O-220 BU406 BU406 transistor BU406 to220 5 lead plastic TIP32 TIP31 BY205 BU407 2N6191 2N5337 TRANSISTOR TIP31
1978 - Not Available

Abstract: No abstract text available
Text: BU406 , BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , noted) RATING Collector-base voltage (IE = 0) BU406 Emitter-base voltage Continuous collector , ) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 VCEX V CEO VEB IC VALUE , subject to change without notice. 1 BU406 , BU407 NPN SILICON POWER TRANSISTORS electrical , BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VBE = 0 TC = 150Â


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PDF BU406, BU407 O-220 BU406
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU406 /D NPN Power Transistors , Saturation Voltage: VQE(sat) = 1 V (max) @ 5 A Packaged in Compact JEDEC T O -220A B BU406 BU407 7 , VCEO VCEV VCBO Vebo ic BU406 200 400 400 6 7 10 15 4 60 0.48 BU407 150 330 330 Unit Vdc Vdc , EB = 6 Vdc, Iq = 0) BU406 , BU407 'e b o BU406 BU407 v CEO(sus) 200 150 - - Vdc Symbol Min , (continued) REV 2 © M otorola, Inc. 1995 ($ J M O T O R O L A BU406 BU407 ELECTRICAL


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PDF BU406/D -220A BU406 BU407 21A-06 O-220AB
BU406

Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors
Text: TEXAS INSTR -COPTO} ba »F| 0^1721, GG3bb35 D ÔÔ61726 TEXAS INSTR (OPTO) 62C 36635 BU406 , °C case temperature (unless otherwise noted) BU406 BU407 Collector-base voltage 400 V 330 V , |flTbl7Bt: DQ3titi3ti 5 iNSTR (OPTDT BU406 , BU407 N-P-N SILICON POWER TRANSISTORS 62C 36636 D T , 30 mA, Ib = 0 140 v Ices VCE = 400v, VBE = 0 BU406 5 mA VCE = 250 v, vBE = 0 0.1 vce = 2so v , €¢ DALLAS. TEXAS 75265 TEXAS INSTR -COPTO} ^ »E |äc]t317at, D03titi37 4 62C 36637 D BU406 , BU407


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PDF GG3bb35 BU406, BU407 110-Degree to-220ab BU406 BU407 300fis, 003bb3T N-P-N SILICON POWER TRANSISTORS t317 texas transistors
2002 - transistor BU406

Abstract: BU407 BU406 IC7A
Text: 91-11-2579 9569, 2579 5290 e-mail sales@cdil.com www.cdil.com www.cdilsemi.com BU406_407 Rev_1 281102E , PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , ) DESCRIPTION SYMBOL Collector Emitter (sus) Voltage *VCEO(sus) IC=100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406


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PDF BU406 BU407 O-220 C-120 281102E transistor BU406 BU407 BU406 IC7A
BU407

Abstract: BU406 1462, TRANSISTOR
Text: , lB1=-lB2= 0.6A, L=150 uH) 0.75 J (1) Pulse Test: Pulse width ^ 300 us , Duty Cycle S 2.0% BU406.BU407 , BU406- BU407- 5 1 2 5 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two , Voltage - VCEV = 330 V (Min.) - BU407 = 400 V (Min.) - BU406 * Low Saturation Voltage VCEJsafl=10V(Max) @'c=5 0A * Fast Switching Speed: tf=0.75 us (Max) MAXIMUM RATINGS NPN BU406 BU407 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VcEO 200 150 V Collector-Emitter Voltage VcEV 400 330


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PDF BU407 BU406 BU406 BU407 BU406- BU407- 150oC 1462, TRANSISTOR
bu406

Abstract: bu408 transistor BU408
Text: Saturation Voltage : BU406 : BU406H : BU408 Ie b o V be = 6 V , lc = 0 V c E (s a t) lc =5A, Ib = 0.5A lc = 5A, lB = 0.8A lc = 6A, lB= 1.2A Base Emitter Saturation Voltage : BU406 : BU406H , = 1.2A 10 0.75 0.4 0.4 MHz uS uS uS BU406 . BU406H : BU408 485 S ELECTRONICS BU406 /406H/408 STATIC CHARACTERISTIC NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN V«(V), CO , BU406 /406H/408 HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE NPN EPITAXIAL


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PDF BU406/406H/408 BU408 BU406 BU406H BU408 bu406 transistor BU408
2000 - Not Available

Abstract: No abstract text available
Text: Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L Bulk BU406TU BU406 TO-220 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum , 0.5 A BU406H IC = 5 A, IB = 0.8 A BU408 BU406 Current Gain Bandwidth Product BU406 tOFF , BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use , Semiconductor Corporation BU406 / 406H / 408 Rev. 1.2.0 www.fairchildsemi.com 1 BU406 / 406H / 408 â


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PDF BU406 O-220 BU406 O-220 BU406TU
1978 - 2N5337

Abstract: 2N6191 BU406 BU407 BY205 TIP31 TIP32 TIP32 applications transistor TIP31
Text: BU406 , BU407 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q , voltage (V BE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 BU406 , BU406 , BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical , VBE = 0 BU406 V CE = 330 V ICES VBE = 0 BU407 5 Collector-emitter V CE = 250 V VBE = 0 BU406 0.1 cut-off current V CE = 200 V VBE = 0 BU407 0.1 5 V CE =


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PDF BU406, BU407 O-220 BU406 2N5337 2N6191 BU406 BU407 BY205 TIP31 TIP32 TIP32 applications transistor TIP31
2000 - Not Available

Abstract: No abstract text available
Text: BU406 NPN Epitaxial Silicon Transistor Features Description • High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high , .Emitter Ordering Information Part Number Marking BU406 BU406 Packing Method TO-220 3L BU406 BU406TU Package Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings , Semiconductor Corporation BU406 Rev. 1.2.1 www.fairchildsemi.com 1 BU406 — NPN Epitaxial Silicon


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PDF BU406 BU406 O-220 O-220 BU406TU
1997 - transistor BU406

Abstract: BU406
Text: BU406 SILICON NPN SWITCHING TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR , DESCRIPTION The BU406 is a silicon epitaxial planar NPN transistor in Jedec TO-220 plastic package. It is a , A A A W o C o C 1/4 BU406 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance , , duty cycle 1.5 %. 2/4 o T case = 150 C t = 10 ms 10 MHz 0.75 4 µs A BU406 , 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BU406 Information furnished is


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PDF BU406 BU406 O-220 O-220 transistor BU406
lg crt tv circuit diagram

Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
Text: Characteristics. 4/4 284 £ZT SGS-THOMSON mcmmjsgjBM'mt SCS-THOMSON BU406 7# «1®1LIIÛTI»IMS BU406H /BU408 HORIZONTAL TV DEFLECTORS ESCRIPTION he BU406 , BU406H , and BU408 are silicon epitax-i planar NPN transistors , 1 mA VcE(sa!)* Collector-emitter Saturation Voltage for BU406 lc = 5A ¡b = 0.5 A for BU406H lc = 5A , ®Â®â„¢Â®Â»Â» BU406 / BU406H /BU408 ise-emitter Saturation Voltage. _s- lest , MEMHUStnraowES 287 BU406 / BU406H /BU408 SWITCHING TIMES TEST CIRCUIT (FALL, STORAGE AND TURN-OFF TIME) Core =


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PDF BU326 BU326A BU326 BU326-BU326A 25x4x2 19x15x5 330il lg crt tv circuit diagram lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
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