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BU326A ei ComS.I.T. 1,000 - -
BU326A Texas Instruments Chip One Exchange 13 - -
TBU326A Continental Device India Ltd TME Electronic Components 869 $1.68 $1.20

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BU326A datasheet (41)

Part Manufacturer Description Type PDF
BU326A Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
BU326A STMicroelectronics HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Original PDF
BU326A STMicroelectronics HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Original PDF
BU326A Wing Shing Computer Components NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
BU326A Boca Semiconductor HIGH VOLTAGE POWER TRANSISTORS Scan PDF
BU326A Continental Device India TO-3 Power Package Transistors Scan PDF
BU326A Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BU326A Continental Device India TO-3 Power Package Transistors Scan PDF
BU326A Crimson Semiconductor MULTIEPITAXIAL Transistors Scan PDF
BU326A Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
BU326A Diode Transistor Transistor Short Form Data - TO-3 Scan PDF
BU326A LesAg HBB Power Transistors for Horizontal Deflection and Television Switch-mode Power Supply Scan PDF
BU326A Mospec High Voltage Power Transistor Scan PDF
BU326A Mospec POWER TRANSISTORS(6A,375-400V,75W) Scan PDF
BU326A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BU326A Motorola Switchmode Datasheet Scan PDF
BU326A Motorola European Master Selection Guide 1986 Scan PDF
BU326A Mullard Quick Reference Guide 1977/78 Scan PDF
BU326A Others Basic Transistor and Cross Reference Specification Scan PDF
BU326A Others Shortform Transistor PDF Datasheet Scan PDF

BU326A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: BU326A BU208A 2N3055 BDW51C BDW51C BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 2N3055 BUV50 BUV21 BUV21 TIP31C TIP31A TIP31C BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A Industry standard 2SC931 2SC932 2SC935 2SC936 2SC937 2SC939 2SC940 , nearest preferred BD241A BD241A BUX80 BU208A BU208A BU326A BU326A BDW51C BU208A BU208A BU208A , BU208A BU326A BD243B BD243C BD243B BD243C BUV50 BU326A BUV50 BUV21 BU326A BU326A BU208A


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
bu326a

Abstract: bu326
Text: 7^537 0056557 0 ■*T" 3>~S-\3 SGS-THOMSON M tg[^(»[i(M ©i«S_ S G S-TH0MS0N BU326 BU326A 3QE P HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BU326 and BU326A are silicon , system. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BU326A BU326 Unit VcES , )* Collector-emitter Sustaining Voltage (I b =0) I ebo Max. for BU326A for BU326 V oe = 900V V0E = 900V V , BU326A VEB =10V lc = 100mA V V 325 400 for BU326 for BU326A VcE(sat


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PDF BU326 BU326A BU326 BU326A 10Oii BU326-BU326A BU326-B U326A
1997 - BU326A

Abstract: BU326
Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN , EQUIPMENT s 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO , to 200 o C 200 o C 1/4 BU326A THERMAL DATA R thj-case Thermal Resistance , µs, duty cycle 1.5 % 2/4 V CE = 5 V 25 BU326A TO-3 MECHANICAL DATA mm DIM. MIN , N B V E G U D R P003F 3/4 BU326A Information furnished is believed


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PDF BU326A BU326A BU326
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: BD235 2N5339 2N5339 2N5339 BDW51C BDW51C BDW51C BDW51C BDW51C BU326A BU208A 2N3055 BDW51C , TIP31C TIP31A TIP31C BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A BD241A BD241A BUX80 BU208A BU208A BU326A BU326A BDW51C BU208A BU208A BU208A BU208A BU208A TIP31A TIP31A BU208A BDW51C BU208A 2N5657 2N5657 MJE182 BD237 BU208A BU208A BU208A BU326A , NEAREST PREFERRED BD243B BD243C BD243B BD243C BUV50 BU326A BUV50 BUX41 BU326A BU326A BU208A


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
bu326

Abstract: BU326A
Text: SGSTHO M SON BU326 BU326A HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BU326 and BU326A , se BU326A 900 400 10 6 8 3 BU326 800 3 25 Unit V V V A A A s 25°C 75 - 65 to 200 200 , BU326A Ò ^ Il II < L O C D LO Od Min. Typ. Max. 1 1 2 2 10 Unit I < < ' E E I fo r BU326A fo r BU326 fo r BU326 fo r BU326A < E < E mA Iebo E m itter C utoff C urrent (lc = 0 , 2/4 7 SCS-THOMSON " 7# m cb bhu iottì ® « « * 282 3Ü326- BU326A Thermal Transient


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PDF BU326 BU326A BU326A 326-BU326A
BU326

Abstract: BU326A BU326-BU326A
Text: BU326, BU326A N-P-N SILICON POWER TRANSISTORS TT OCTOBER 1982 - REVISED OCTOBER 1984 60 W at 25 , absolute maximum ratings at 25°C case temperature (unless otherwise noted) BU326 BU326A Collector-base , , BU326A N-P-N SILICON POWER TRANSISTORS 62C 36630 D T-33-// electrical characteristics at 25°C case , 0.1 A, L = 25 mH, See Note 2 BU326A 400 Ices VCE = 800 V, VBE = O BU326 1 mA VCE = 800 V, VBE = 0, TC = 125°C 2 VQE = 900 V, VBE = 0 BU326A 1 VCE = 900 V, VBE = O, TC = 125«C 2 'ebo VEB =


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PDF fliti75b 9e1726 BU326 BU326A BU326A 0d3fcjfci33 BU326, T-33-// BU326-BU326A
Not Available

Abstract: No abstract text available
Text: S G S -T H O M S O N iM m @ ignnCTisì«ii(Sgì BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 2 DESCRIPTION The BU326A is a silicon , -65 to 200 °C 200 °c 1/4 BU326A THERMAL DATA Therm al R esistance Ju n ctio n -ca , # SGS-THOMSON n B œ B ® iiLie¥ii(siraÊS V 25 BU326A TO-3 MECHANICAL DATA mm inch DIM


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PDF BU326A BU326A P003F
BU326

Abstract: BU326A
Text: SavantIC Semiconductor Product Specification BU326 BU326A Silicon NPN Power Transistors , 375 Open base BU326A VEBO V 900 BU326 Collector-emitter voltage Emitter-base voltage UNIT 800 Open emitter BU326A VCEO VALUE V 400 Open collector 10 V IC , BU326A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , . MAX UNIT 375 IC=0.1A; IB=0 BU326A V 400 VCEsat-1 Collector-emitter saturation


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PDF BU326 BU326A BU326 BU326A
BU326A

Abstract: BU326
Text: HIGH VOLTAGE POWER TRANSISTOR The BU326 and BU326A Type are a fast switching high voltage , : * Collector-Emitter Sustaining Voltage - vceo(sus) = 375 V (Min.) - BU326 * 400 V (Min.) - BU326A * Low , Semiconductor Corp. BSC http ://www.bocasemi.com Characteristic Symbol BU326 BU326A Unit Collector-Emitter , 25 50 75 100 125 150 175 200 Tc, TEMPERATURE('C) NPN BU326 BU326A 6 AMPERE POWER TRANSISTORS , G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 BU326, BU326A NPN ELECTRICAL


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PDF BU326 BU326A BU326 BU326A
2000 - BU326A

Abstract: BU326
Text: BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED , INDUSTRIAL EQUIPMENT s DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec , -65 to 200 o C 200 o C 1/4 BU326A THERMAL DATA R thj-case Thermal , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 V CE = 5 V 25 BU326A TO , 1.193 A P C O N B V E G U D R P003F 3/4 BU326A


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PDF BU326A BU326A BU326
lg crt tv circuit diagram

Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
Text: -I SGS-THOMSON BU326 IM Mß»[kIig?i®lI]fgS . BU326A HIGH VOLTAGE POWER SWITCH ESCRIPTION ie BU326 and BU326A are silicon muitiepitaxîal ssa NPN transistors in Jedec TO-3 meta! case irticularly , Parameter Value Unit BU326A I BU326 VcES Collector-emitter Voltage (VBE = 0) 900 800 V VcEO , Collector Cutoff Current (VBE = 0) VCE = 900V for BU326A VCE = 900V for BU326 V0E = 900V Tcase = 125'C for BU326 V0e = 900V Tease = 1253C for BU326A 1 1 2 2 mA mA mA mA Iebo Emitter Cutoff Current (lc =0) VEB


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PDF BU326 BU326A BU326 BU326-BU326A 25x4x2 19x15x5 330il lg crt tv circuit diagram lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
IR 92 0151

Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Text: 1SE D | b3t.75S4 DOäMöQI M | BU326, BU326A T - " 2> 3-/3 E L E C T R IC A L C H A R A C T E R , Su stain in g Voltage { I C = 1 0 0 m A , l B = 0. L - 2 5 m H ) v C E O (sus) BU 326 BU326A 375 400 'C E S BU 326 BU326A 'C E S BU 326 BU326A 'E B O : 1 * 1 '0 2 .0 2 .0 i 1 1 .0 1 .0 Vdc C o , * 2% . 3-364 MO TORCLA SC XSTRS/R F 1EE D | b3fc.7254 00fl4fil0 0 | BU326, BU326A T '


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PDF AN415A) IR 92 0151 transistor BU 109 bu326 t 326 Transistor transistor BU 184
B0411

Abstract: B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: BDW51C BU326A BU208A 2N3055 BDW51C BDW51C BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 BUX80 2N3055 181 165 , PREFERRED RAGE BUV50 BUV21 BUV21 TIP31C TIP31A TIP31C BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A BD241A BD241A BUX80 BU208A BU208A BU326A BU326A BDW51C BU208A BU208A BU208A BU208A BU208A TIP31A TIP31A BU208A BDW51C BU208A 2N5657 2N5657 MJE182 BD237 BU208A BU208A BU208A BU326A BD243B , NEARESTPREFERRED RIGE BD243C BUV50 BU326A BUV50 BUV21 BU326A BU326A BU208A BU208A BUX48 BUX48 BUY69A BUY69A BU208A


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 B0411 B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
2000 - BU326A

Abstract: BU326
Text: BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED , INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO , -65 to 200 o C 200 o C 1/4 BU326A THERMAL DATA R t hj-ca se Thermal , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 V CE = 5 V 25 BU326A TO , 1.193 A P C O N B V E G U D R P003F 3/4 BU326A


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PDF BU326A BU326A BU326
BU326

Abstract: BU326A 40 amp collector current LB-21
Text: BU326, BU326A NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (lc= 100 mA, lB = 0) BU326 BU326A ^CEO(SUS) 375 400 V Collector Cutoff Current (VCE = 800 V, VBE= 0 ) BU326 (VCE = 900 V, VBE = 0 ) BU326A 'CES 1.0 1.0 mA Emitter Cutoff Current (VEB=10V,IC = 0) 'ebo 10 mA ON CHARACTERISTICS (1) DC Current Gain (IC=1.0A,VCE = 5.0V) hFE 25(typ) Collector - Emitter


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PDF BU326, BU326A BU326 BU326A BU326 40 amp collector current LB-21
BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BU326A BU208A 2N3055 BDW51C BDW51C BUW34 BUW34 BUW34 BUW34 BUW34 BUW34 BUW34 BUW34 2N3055 , BDW51C BDW51C BU326A BUX48A BU326A BU326A BU326A BU326A BU326A BU326A BD241A BD241A BUW34 BU208 BU208 BU326A BU326A BDW51C BU208 MJE182 BU208 MJE182 BU208 BU208 BU208A BU208A TIP31A TIP31A BU208A BDW51C BU208 2N5657 2N5657 MJE182 2N4923 BU208 BU208 BU208 BU326A BD243B BD243C BD243B BD243C 2N5671 BU326A 2N5671 BUX41 * Product in Development please contact your


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Not Available

Abstract: No abstract text available
Text: SGS-mOMSON MOgn®ia,ieiri®i0(Di BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . POWER SUPPLIES . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. TO , T| June 1997 1/2 207 BU326A THERMAL DATA R lh j- c : Therm al R esistance


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PDF BU326A BU326A 5CC8H20
BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Text: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 © t 7 26 TEXAS INSTR~ 62C 3 6 6 2 9 BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 D f 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak , ) 62C 3 6 6 3 1 BU326, BU326A N-P-N SILICON POWER TRANSISTORS T - 3 S - M P A R A M E T ER M E A S , IN S T R {O PT O ] 62C 36632 T - - 2 > *> -() D BU326, BU326A N-P-N SILICON POWER


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PDF BU326, BU326A BU326 BU326-BU326A 331Z st bux
NPN Transistor 1A 400V

Abstract: BU326A BU326
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT , Semiconductor isc Silicon NPN Power Transistor BU326A ELECTRICAL CHARACTERISTICS TC=25 unless


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PDF BU326A NPN Transistor 1A 400V BU326A BU326
BU326A Transistor

Abstract: No abstract text available
Text: ., U na. TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BU326A Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: V C EO(sus)=400V(Min) • Low Collector-Emitter Saturation Voltage:V C E(sat)=1.5V(Max.)@lc=2.5A APPLICATIONS • Designed for use in operating in color TV receivers chopper '*\, supplies. .3 J , Transistor BU326A ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified SYMBOL PARAMETER


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PDF BU326A BU326A Transistor
BU326

Abstract: 326a
Text: >ÎL BU326, 326A NPN POWER TRANSISTORS Switching-Mode CTV Power Supply Applications BU326, BU326A DIM A B C D E F G H J K L M MAX 39,37 22,22 8,50 6,35 1.09 0,96 1.77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11.15 12,25 26,67 3.84 4,19 - MIN PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (V b e = 0) Collector-emitter , max. 800 max. 375 max. 326A 900 V 400 V 10 V 5-138 BU326, BU326A Collector current Collector


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PDF BU326, BU326A 100mA; 300yis; BU326 326a
2002 - Not Available

Abstract: No abstract text available
Text: BU326A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can


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PDF BU326A O204AA) 18-Jun-02
2002 - BU326

Abstract: No abstract text available
Text: BU326A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can


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PDF BU326A O204AA) 16-Jul-02 BU326
NPN 800V

Abstract: NPN VCEO 800V BU326A
Text: NPN BU326A SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol Rating VCBO VCEO IC PC Tj Tstg 900 400 6 60 150 -50~150 Unit V V A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) C Characteristic Collector Cutoff Current


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PDF BU326A 80-Emitter NPN 800V NPN VCEO 800V BU326A
2002 - BU326A

Abstract: No abstract text available
Text: BU326A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 8A 7.92 (0.312) 12.70 (0.50) All Semelab


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PDF BU326A O204AA) 31-Jul-02 BU326A
Supplyframe Tracking Pixel