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BTS3046SDL Infineon Technologies AG Avnet 7,500 $0.81 $0.78
BTS3046SDLATMA1 Infineon Technologies AG New Advantage Corporation 5,000 $1.19 $1.11
BTS3046SDLATMA1 Infineon Technologies AG Farnell element14 480 £1.18 £0.89
BTS3046SDLATMA1 Infineon Technologies AG Newark element14 459 $1.83 $0.90
BTS3046SDLATMA1 Infineon Technologies AG Future Electronics 2,500 $0.83 $0.83
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BTS3046SDLATMA1 Infineon Technologies AG Chip1Stop 2,500 $0.97 $0.97
BTS3046SDLATMA1 Infineon Technologies AG Chip1Stop 950 $1.64 $1.01
BTS3046SDLATMA1 Infineon Technologies AG Chip1Stop 930 $1.65 $1.02
BTS3046SDR Infineon Technologies AG Avnet - $0.89 $0.76
BTS3046SDRATMA1 Infineon Technologies AG Chip1Stop 2,500 $0.96 $0.96
BTS3046SDRATMA1 Infineon Technologies AG Chip1Stop 699 $1.28 $1.05
BTS3046SDRATMA1 Infineon Technologies AG Future Electronics - $0.83 $0.83
BTS3046SDRATMA1 Infineon Technologies AG element14 Asia-Pacific - $2.49 $1.22
BTS3046SDRATMA1 Infineon Technologies AG Avnet - $0.89 $0.79
BTS3046SDRATMA1 Infineon Technologies AG Farnell element14 - £1.20 £0.90

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BTS 304 datasheet (2)

Part Manufacturer Description Type PDF
BTS3046SDL Infineon Technologies PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC SW SMART LOW SIDE TO252-3-11 Original PDF
BTS3046SDR Infineon Technologies PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC SW SMART LOW SIDE TO252-3-11 Original PDF

BTS 304 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - mark

Abstract: No abstract text available
Text: Three-stage Three-stage Three-stage Three-stage Charge temperature compensation Yes — BTS included Yes — BTS included Yes — BTS included Yes — BTS included Optimal efficiency , ) -40 °C to 85 °C (-40 °F to 185 °F) Product weight 22.7 kg (50.0 lb) 30.4 kg (67.0 lb) 22.7 kg (50.0 lb) 30.4 kg (67.0. lb) Shipping weight 25.6 kg (56.0 lb) 32.7 kg (72.0 lb


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PDF 0100BR1208 mark
2003 - PM7800

Abstract: PM7819 2G base station antenna product CDMA2000 EV-DO chip BTS 304
Text: (MCPA) commonly used in many BTS designs. · 32-bit complex baseband or 16-bit IF output. · 16- or , temperature range (-40 °C to +85 °C). · 304 -pin SBGA with a body size of 31mm x 31mm. Key features of , PALADIN 10 MCPA-EQUIPPED WCDMA BTS PMC-Sierra Solution Baseband (I,Q) 1 Baseband (I,Q) 2 Baseband , ACPCE 2-Carrier WCDMA DSP Local Host BTS Control Processor SPI PALADIN 10 MCPA-EQUIPPED CDMA2000 BTS PMC-Sierra Solution Baseband (I,Q) 1 Baseband (I,Q) 2 Baseband Cards (Modems


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PDF PM7800 PMC-2001613 PM7800 PM7819 2G base station antenna product CDMA2000 EV-DO chip BTS 304
2002 - Not Available

Abstract: No abstract text available
Text: Base Transceiver Subsystems ( BTS ). • Multi-carrier IS-95 and cdma2000 1xRTT BTS . • Other air , +85 °C). • 304 -pin SBGA with a body size of 31mm x 31mm. BLOCK DIAGRAM PALADIN-15 T M , -15TM MCPA-EQUIPPED BTS Carrier 1 Carrier 2 WCDMA Carrier 3 WCDMA V ref PM7815 PALADIN-15 TM DCSP VD DAC Low-Cost Class AB Amplifier local BTS Controller BSC or Radio Resource Management


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PDF PM7815 PALADIN-15TM 16-bit te4-415-6000 TMS320C5410) PMC-2010692 PALADIN-15
2000 - BTS 304

Abstract: TMS320C5410 bts gsm bts 6000 "Base Station Controller" RADIO BASE STATION 6000 Sierra Semiconductor SIERRA SEMICONDUCTORS PMC-2001613 PM7800
Text: purposes. · Multi-carrier WCDMA Base Transceiver Subsystems ( BTS ). · CDMA2000 BTS (requires firmware upgrade). · GSM/TDMA/EDGE BTS (requires firmware upgrade). PACKAGING · Low-power 1.8 V CMOS core , range (-40 °C to +85 °C). · 304 -pin SBGA with a body size of 31mm x 31mm. BLOCK DIAGRAM PALADIN , APPLICATIONS PALADIN-10 MCPA-EQUIPPED BTS Low-Cost Class AB Amplifier Carrier 1 V Ref PM7800


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PDF PM7800 PALADIN-10 16-bit TMS320C5410) PMC-2001613 BTS 304 TMS320C5410 bts gsm bts 6000 "Base Station Controller" RADIO BASE STATION 6000 Sierra Semiconductor SIERRA SEMICONDUCTORS PMC-2001613 PM7800
2003 - BTS 304

Abstract: PM7815 2G base station antenna product WCDMA baseband modulation PM7819
Text: (MCPA) commonly used in many BTS designs. · 32-bit complex baseband or 16-bit IF output. · 16- or , temperature range (-40 °C to +85 °C). · 304 -pin SBGA with a body size of 31mm x 31mm. Key features of , PALADIN 15 MCPA-EQUIPPED WCDMA BTS PMC-Sierra Solution Baseband (I,Q) 1 PALADIN Waveshaper , Downconverter SPI PALADIN ACPCE 3-Carrier WCDMA DSP SPI Local Host BTS Control Processor PALADIN 15 MCPA-EQUIPPED CDMA2000 BTS PMC-Sierra Solution Baseband (I,Q) 1 PALADIN Waveshaper


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PDF PM7815 PMC-2010692 BTS 304 PM7815 2G base station antenna product WCDMA baseband modulation PM7819
2004 - Not Available

Abstract: No abstract text available
Text: (MCPA) commonly used in many BTS designs. • 16- or 32-bit observation signal input. • Digital , time. PACKAGING • Industrial temperature range (-40 °C to +85 °C). • 304 -pin SBGA with a , PALADIN 15 MCPA-EQUIPPED WCDMA BTS PMC-Sierra Solution Baseband (I,Q) 1 Baseband (I,Q) 2 Baseband , SPI PALADIN ACPCE 3-Carrier WCDMA DSP SPI Local Host BTS Control Processor PALADIN 15 MCPA-EQUIPPED CDMA2000 BTS PMC-Sierra Solution Baseband (I,Q) 1 PALADIN Waveshaper


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PDF PM7815 PMC-2010692
2000 - BTS 304

Abstract: bts gsm PM7800 PALADIN-10
Text: purposes. · Multi-carrier WCDMA Base Transceiver Subsystems ( BTS ). · CDMA2000 BTS (requires firmware upgrade). · GSM/TDMA/EDGE BTS (requires firmware upgrade). PACKAGING · Low-power 1.8 V CMOS core , range (-40 °C to +85 °C). · 304 -pin SBGA with a body size of 31mm x 31mm. BLOCK DIAGRAM PALADIN , -10 MCPA-EQUIPPED BTS Lo w -C ost C lass A B A m p lifier C a rrie r 1 V Ref P M 78 00 P A L A D IN -10


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PDF PM7800 PALADIN-10 16-bit PMC-2001613 BTS 304 bts gsm PM7800 PALADIN-10
2004 - CDMA2000 EV-DO chip

Abstract: No abstract text available
Text: multicarrier power amplifiers (MCPA) commonly used in many BTS designs. The PALADIN 15 system comprises the , °C). · 304 -pin SBGA with a body size of 31mm x 31mm. APPLICATIONS · Multi-carrier WCDMA, cdmaOne , Signal Processor TYPICAL APPLICATIONS PALADIN 15 MCPA-EQUIPPED WCDMA BTS PMC-Sierra Solution Baseband , To Antenna PALADIN 15 MCPA-EQUIPPED CDMA2000 BTS PMC-Sierra Solution Baseband (I,Q) 1 Baseband , Fr id Local Host BTS Control Processor SPI ay ,1 3-Carrier WCDMA PALADIN 15


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PDF PM7815 PMC-2010692 CDMA2000 EV-DO chip
Not Available

Abstract: No abstract text available
Text: V=4.5V Semiconductor Group 188 ■fl235b05 00fll32t 304 ï SIEMENS BTS 933 , û235bOS 00Û13B3 1 % SIEMENS HITFET® BTS 933 Smart Lowside Power Switch Product Summary , mJ - ■û235b.D5 D O ß i a S b bTS SIEMENS BTS 933 Inductive and overvoltage , 531 SIEMENS BTS 933 Maximum allowable power dissipation Ptot = f(T c ) On-state , 187 Tj rc ] Ö235b05 0031320 473 SIEMENS BTS 933 Application examples: Current


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PDF 235bOS fl235b05 00fll32t TQ220/5 T0220/5 E3062A 67060-XX E3043 Q67060-XX
BTS 304

Abstract: siemens F sensor BTS current sense siemens E3043 E3062A GP705 IC 933 Smart 700 SIEMENS
Text: ÛS35L0S 00Û13E3 ^b SIEMENS Smart Lowside Power Switch HITFET® BTS 933 Product Summary , 00Ö1325 SIEMENS Electrical Characteristics BTS 933 Parameter and Conditions Symbol Values Unit at Tj , SIEMENS BTS 933 Block diagram Terms Rcc ■IC I d in HITFET cc s Vbb The ground lead , 0001327 S31 SIEMENS BTS 933 Maximum allowable power dissipation Ptot = f(Tc) 100 125 150 TC ra , Respective Manufacturer ■Ô235b05 0081323 47fl SIEMENS BTS 933 Application examples: Current Sense


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PDF S35L0S fl235L TQ220/5_ Q67060-XX gp705165 T0220/5 E3043 E3062A BTS 304 siemens F sensor BTS current sense siemens E3043 GP705 IC 933 Smart 700 SIEMENS
BTS 177

Abstract: BTS 304
Text: DGS4fl24 304 BTS 542 D Options Overview all versions: High-side switch, Input protection, ESD protection , SIEMENS BTS 542 D PROFET® • High-side switch • Short-circuit protection â , added between Vy, and GND. Semiconductor Group 7 -169 ■flEBStiDS □□SMflSl bT5 ■BTS 542 D , page 169, (see chapter 3) Semiconductor Group 7 -170 fl235bOS 0054052 531 BTS 542 D Parameter and , 7-171 ÔE35bOS 0054Ö23 47Û BTS 542 D Truth Table input- Output Status level level version


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PDF T0218AB/5 a235bQ5 200ns fl235bDS D05463G BTS 177 BTS 304
2006 - 7930B

Abstract: HLGF1019 H bridge current sense P-TO263-7 BTS7930B Thermal Shut Down Functioned MOSFET BTS 7930B P-TO-263-7 50P03L 4311 mosfet transistor
Text: Data Sheet, Rev. 2.0, June 2006 BTS 7930B H ig h C u r r e n t P N H a lf B r i d g e N o v a , i n g . High Current PN Half Bridge BTS 7930B Product Summary . . . . . . . . . . . . . . . , Current PN Half Bridge NovalithICTM BTS 7930B Product Summary BTS 7930B The BTS 7930B is a fully , . The BTS 7930B provides a cost optimized solution for protected high current PWM motor drives with , logic level inputs Adjustable slew rates for optimized EMI Type Package BTS 7930B P-TO


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PDF 7930B 7930B HLGF1019 H bridge current sense P-TO263-7 BTS7930B Thermal Shut Down Functioned MOSFET BTS 7930B P-TO-263-7 50P03L 4311 mosfet transistor
2004 - half bridge bts 7960

Abstract: BTS7960B HLGF1019 Thermal Shut Down Functioned MOSFET SR 4216 D TRANSISTOR BTS 443 7960B BTS 842 Q67060-S6160 50P03L
Text: Da ta S he et, Re v . 1 .1, De c em ber 2 00 4 BTS 7960 High Current PN Half Bridge NovalithIC , High Current PN Half Bridge BTS 7960 Product Summary . . . . . . . . . . . . . . . . . . . . . . . , , 2004-12-07 High Current PN Half Bridge NovalithICTM BTS 7960B BTS 7960P Product Summary BTS 7960B The BTS 7960 is a fully integrated high current half bridge for motor drive applications. It , , undervoltage, overcurrent and short circuit. P-TO-263-7 BTS 7960P P-TO-220-7 The BTS 7960 provides a


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2005 - BTS7930B

Abstract: No abstract text available
Text: P r e l i m i n a ry D a t a S h e e t , V 1 . 0 , A u g u s t 2 0 0 5 BTS 7930B H ig h C u r r , N e v e r s t o p t h i n k i n g . High Current PN Half Bridge BTS 7930B Product , Preliminary Data Sheet 1 V1.0, 2005-08-03 High Current PN Half Bridge NovalithICTM BTS 7930B Product Summary BTS 7930B The BTS 7930B is a fully integrated high current half P-TO-263-7 bridge for , , undervoltage, overcurrent and short circuit. The BTS 7930B provides a cost optimized solution for protected


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PDF 7930B BTS7930B
2006 - bts7970b

Abstract: BTS 3012 4311 mosfet transistor 7970B Q100 50P03L BTS 131 SMD HLGF1019 P-TO263-7 application note BTS
Text: t o p t h i n k i n g . High Current PN Half Bridge BTS 7970B Product Summary . . . . . . , BTS 7970B Product Summary BTS 7970B The BTS 7970B is a fully integrated high current half P-TO , , overvoltage, undervoltage, overcurrent and short circuit. The BTS 7970B provides a cost optimized solution , slew rates for optimized EMI Type Package BTS 7970B P-TO-263-7 Data Sheet 2 Rev. 2.0, 2006-05-09 High Current PN Half Bridge BTS 7970B Overview 1 Overview The BTS 7970B


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PDF 7970B bts7970b BTS 3012 4311 mosfet transistor 7970B Q100 50P03L BTS 131 SMD HLGF1019 P-TO263-7 application note BTS
smd transistor code 314

Abstract: 41282 bts BTS 308 BTS 307 E3062A 731 zener diode BTS412B 412B2 GI 312 diode POWER SUPPLY BTS SIEMENS smd code l17
Text: . Semiconductor Group 304 04.96 This Material Copyrighted By Its Respective Manufacturer ■äE3Sb05 D0Ö1445 M3Ö ■SIEMENS BTS 412B2 Pin Symbol Function 1 GND Logic ground 2 IN I Input, activates the , Copyrighted By Its Respective Manufacturer ■ö23SbQS DOÖ144h 374 SIEMENS BTS 412B2 Electrical , BTS 412B2 Parameter and Conditions Symbol Values Unit at 7] = 25 °C, Vbb = 12 V unless otherwise , of the zener voltage (increase of up to 1 V). 15) power Transistor off, high impedance, versions BTS


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PDF BTS412B2 fl235b05 412B2 O-220AB/5 Q67Q60-S6109-A2 O-22QAB/5, E3043 412B2 E3043 smd transistor code 314 41282 bts BTS 308 BTS 307 E3062A 731 zener diode BTS412B GI 312 diode POWER SUPPLY BTS SIEMENS smd code l17
2004 - SR 4216 D TRANSISTOR

Abstract: BTS7960B SR 4216 D TRANSISTOR SWITCHING transistor SR 51 NovalithIC half bridge bts 7960 50P03L Q67060-S6160 HLGF1019 leadframe to-220-7
Text: Preliminary Data Sheet, V1.0, November 2004 BTS 7960 H ig h C u r r e n t P N H a lf B r i d g , n k i n g . High Current PN Half Bridge BTS 7960 Product Summary . . . . . . . . . . . . . . , .0, 2004-11-30 BTS 7960B High Current PN Half Bridge NovalithICTM BTS 7960P Product Summary BTS 7960B The BTS 7960 is a fully integrated high current half bridge for motor drive applications. It , , undervoltage, overcurrent and short circuit. P-TO-263-7 BTS 7960P P-TO-220-7 The BTS 7960 provides a


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Not Available

Abstract: No abstract text available
Text: > ¿filólo? 000001b bTS « D I X Data Sheet No.: SBDA-501-B DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd , \ \ CL \ 2 1 2.50 V (1) SKS 02-1 304 (2) SK£ 06-!51° UJ S (2) i «U i g


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PDF SBDA-501-A PO-27/DT-27 DO-27, SK502-510)
smd diode RSTJ

Abstract: zener smd 4T SCR application 77150
Text: , reverse load current limited by connected load. Sem iconductor Group 304 04.96 SIEMENS Pin 1 , specified BTS 412B2 Symbol min [ Values typ | Unit max Load Switching Capabilities and , (increase of up to 1 V). 15) Power Transistor off, high impedance, versions BTS 41 OH, BTS 412B: internal , Vbb disconnect with charged inductive load BTS 412B2 II other external inductive loads L are , Group 312 SIEMENS Timing diagrams Figure 1a: Vbb turn on: JN BTS 412B2 Figure 2b


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PDF BTS412B2 O-220AB/5 Q67060-S6109-A2 O-220AB/5, E3043 412B2 smd diode RSTJ zener smd 4T SCR application 77150
transistor DA3 307

Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
Text: connected load. Semiconductor Group 304 04.96 ■Ô 2 35 b0 5 D D Û1 4M 5 M3à , , versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 16) Low resistance , _ _ Type Logic version bts Overtemperature protection with hysteresis 7] >150 °C, latch , no-load-detection Semiconductor Group 312 ■fi23SL,G5 00fllM53 504 SIEMENS BTS 412B2 Timing , – fl235b05 Q0fll454 440 SIEMENS BTS 412B2 Figure 3b: Turn on into overload, Figure 4a


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PDF fl235bDS BTS412B2 as35bos 412B2 transistor DA3 307 transistor DA3 309 HC-49/transistor DA3 307 DA3 307
SA197

Abstract: DC-37P DD-78 BTS 5240 L
Text: Solder Cup D * 7 1 E " M 77Ebsi pd ü 7m si bTS D* and D*M Performance and , ) .294 (7.46) .257 (6.52) .225 (5.711 .273 (6.93) .241 (6.12) G ±.002 (0.05) .120 ( 3.04 ) .120 ( 3.04 ) .088 (2.231 .088 (2.23) .120 ( 3.04 ) .120 ( 3.04 ) .088 (2.23) .088 (2.23) .120 ( 3.04 ) .120 ( 3.04 ) .088 (2.23) .088 (2.23) .120 ( 3.04 ) .120 ( 3.04 ) .088 (2.23) .088 (2.23) .120 ( 3.04 ) .120 ( 3.04 ) .088 (2.23 , .120 ( 3.04 ) .120 ( 3.04 ) .120 ( 3.04 ) .130 (3.30) .120 ( 3.04 ) .120 ( 3.04 ) .120 ( 3.04 ) .130 (3.30) .358


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PDF 77Ebsi DA1599) SA197 DC-37P DD-78 BTS 5240 L
3BR0665JF

Abstract: 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1
Text: and receiver evaluation boards, please see “Communication” category. BTS 3256D Protected , the new power HITFET™ BTS3256D BTS 3256D. Enables easy read out of digital status via LED, and , BTS 500x0-1EGA product family, which can be used in parallel and also to drive two independent loads , -1EGA Demoboard BTS50080-1EGA Evaluation kit to demonstrate the functionality of the BTS 5241L, BTS 5234G and BTS 5230GS. These are 2-channel, smart power PROFET TM (high-side switches), except BTS 6143D which


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PDF TC1797, TC1197 TC1797 XC866, XC886, XC888 XC800 XC164CM XE164 B192-H9214-G2-X-7600 3BR0665JF 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1
2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: No file text available


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PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Not Available

Abstract: No abstract text available
Text: BTs offer highest efficiency available • IG BTs optimized for specified application conditions â , : + 39 11 451 0111 IR FA R EAST: K&H Bldg., 2F, 30-4 Nishi-lkebukuro 3-Chome, Toshima-Ku, Tokyo Japan


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PDF IRG4BC30F O-220AB
2011 - ODV-065R14E17K-G

Abstract: ODV2-065R18J-G 0/ODV-065R14E17K-G V/ODV-065R18EK-G Comba Telecom TA-E12FDA-A ODV-065R17B ODV-065R17E18K-G ODV-065R15B15J15J ODV-065R15E18K-G
Text: A. BTS , and Microwave anechoic chamber 5 www.comba-telecom.com Product Selection Guide A: BTS , ) kg (lb) 1935x265x141 (76.1x10.4x5.6) 13.8 ( 30.4 ) 19.8 (43.7) UV Resistant PVC, Light Grey 00 , 25 960MHz @ 0o Issued: Nov12 Control: 3-0-4 1/1 Outdoor Directional Panel Antenna ODV


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PDF SE-167 ODV-065R14E17K-G ODV2-065R18J-G 0/ODV-065R14E17K-G V/ODV-065R18EK-G Comba Telecom TA-E12FDA-A ODV-065R17B ODV-065R17E18K-G ODV-065R15B15J15J ODV-065R15E18K-G
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