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WeEn Semiconductor Co Ltd
BT134W-800,115 TRIAC 800V 1A SC73
BT134W-800,115 ECAD Model
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BT134W-800,115 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
BT134W-800,115 BT134W-800,115 ECAD Model NXP Semiconductors BT134W-800 - TRIAC, 800 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC Original PDF
BT134W-800,115 BT134W-800,115 ECAD Model NXP Semiconductors Triacs, Discrete Semiconductor Products, TRIAC 800V 1A SC73 Original PDF
BT134W-800,115 BT134W-800,115 ECAD Model NXP Semiconductors Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V; Package: week 35, 2003 Original PDF

BT134W-800,115 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: semiconductor products 2001 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160 , ://www.semiconductors.philips.com © Philips Electronics N.V. 2001 SCB 71 All rights are reserved. Reproduction in whole or , industrial or intellectual property rights. Printed in The Netherlands Date of release: January 2001


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PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
2001 - BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: products 2001 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 , © Philips Electronics N.V. 2001 SCB 71 All rights are reserved. Reproduction in whole or in part is , intellectual property rights. Printed in The Netherlands Date of release: January 2001 Document


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PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
2001 - MCR08BT1

Abstract: No abstract text available
Text: ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 MAX. 2001 0.5 0.8 8 9 0.32 50 1 5 5 2 0.1 150 125 UNIT V , . The rate of rise of current should not exceed 15 A/µs. July 2001 1 Rev 1.000 Philips , 2 V/µs; RGK = 1 k MIN. TYP. 25 2 100 MAX. UNIT V/µs µs µs July 2001 2 Rev 1.000 Philips , 2001 3 Rev 1.000 Philips Semiconductors Product specification Thyristor logic level , rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. July 2001 4 Rev


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PDF MCR08BT1 OT223 MCR08BT1
2001 - BT169 equivalent

Abstract: BT169 in rth 13 sp BT134W BT169 BT169W SC18
Text: Operating junction temperature MAX. B 2001 D 4001 E 5001 UNIT G 6001 V - 0.63 , exceed 15 A/µs. September 2001 1 Rev 1.400 Philips Semiconductors Product specification , V/µs - 2 - µs - 100 - µs tgt tq September 2001 2 Rev 1.400 , solder point temperature Tsp. September 2001 0 50 Tj / C 100 150 Fig.6. Normalised , . September 2001 0 50 Tj / C 100 150 Fig.12. Typical, critical rate of rise of off-state


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PDF OT223 BT169W BT169 BT169 equivalent BT169 in rth 13 sp BT134W BT169 SC18
2001 - BT134W

Abstract: BT168 BT168GW BT169W SC18
Text: on-state. The rate of rise of current should not exceed 15 A/µs. September 2001 1 Rev 1.000 , 2 - µs - 100 - µs tgt tq September 2001 2 Rev 1.000 Philips , (RMS) , versus solder point temperature Tsp. September 2001 0 50 Tj / C 100 150 Fig , °C), versus junction temperature Tj, RGK = 1 k. September 2001 0 50 Tj / C 100 150 Fig , µm thick). September 2001 5 Rev 1.000 Philips Semiconductors Product specification


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PDF OT223 BT168 BT134W BT168 BT168GW BT169W SC18
2001 - introduction to power semiconductors

Abstract: MCR08BT1 APPCHP1
Text: 2001 Philips Semiconductors Product specification Thyristor logic level GENERAL DESCRIPTION , ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 MAX. 2001 0.5 0.8 8 9 0.32 50 1 5 5 2 0.1 150 125 UNIT V , . The rate of rise of current should not exceed 15 A/µs. July 2001 2 Rev 1.000 Philips , /dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 k MIN. TYP. 25 2 100 MAX. UNIT V/µs µs µs July 2001 3 , °C), versus junction temperature Tj. July 2001 4 Rev 1.000 Philips Semiconductors Product


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PDF MCR08BT1 MCR08BT1 01-Oct-97) introduction to power semiconductors APPCHP1
2001 - MCR08BT1

Abstract: BT134W BT169W SC18
Text: July 2001 Philips Semiconductors Product specification Thyristor logic level MCR08BT1 , ; IG = 10 mA; dIG/dt = 100 mA/µs MAX. 2001 V - 0.5 A - 0.8 A - 8 9 , may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. July 2001 2 , ; dVD/dt = 2 V/µs; RGK = 1 k tgt tq July 2001 3 Rev 1.000 Philips Semiconductors , 2001 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25


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PDF MCR08BT1 SCA73 XXXXXX/700/02/pp8 MCR08BT1 BT134W BT169W SC18
2001 - Not Available

Abstract: No abstract text available
Text: 2001 MAX. E 5001 0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125 G 6001 UNIT V A A A A A2s A/µs A V V W W °C °C , exceed 15 A/µs. September 2001 1 Rev 1.300 Philips Semiconductors Product specification , 2001 2 Rev 1.300 Philips Semiconductors Product specification Thyristors logic level , trigger voltage VGT(Tj)/ VGT(25°C), versus junction temperature Tj. September 2001 3 Rev 1.300 , rise of off-state voltage, dVD/dt versus junction temperature Tj. September 2001 4 Rev 1.300


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PDF BT168W BT168
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