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WeEn Semiconductor Co Ltd
BT134W-800,115 TRIAC 800V 1A SC73
BT134W-800,115 ECAD Model
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BT134W-800,115 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
BT134W-800,115 BT134W-800,115 ECAD Model NXP Semiconductors BT134W-800 - TRIAC, 800 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC Original PDF
BT134W-800,115 BT134W-800,115 ECAD Model NXP Semiconductors Triacs, Discrete Semiconductor Products, TRIAC 800V 1A SC73 Original PDF
BT134W-800,115 BT134W-800,115 ECAD Model NXP Semiconductors Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V; Package: week 35, 2003 Original PDF

BT134W-800,115 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF BT134W OT-223 BT134WBT134WBT134WRepetitive OT223. OT223
1997 - SENSITIVE GATE TRIACS, sot223

Abstract: 500E 600E BT134W BT136 BT136D SC18
Text: on-state. The rate of rise of current should not exceed 3 A/µs. August 1997 1 Rev 1.200 Philips , August 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs sensitive , cycles, for sinusoidal currents, f = 50 Hz. August 1997 0 50 Tj / C 100 150 Fig , . August 1997 0 4 Rev 1.200 Philips Semiconductors Product specification Triacs , laminate (35 µm thick). August 1997 5 Rev 1.200 Philips Semiconductors Product


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PDF OT223 BT134W BT134WRepetitive SENSITIVE GATE TRIACS, sot223 500E 600E BT136 BT136D SC18
1997 - 500D

Abstract: 600D BT134W BT136 BT136D SC18 smd jsp smd triacs
Text: current should not exceed 3 A/µs. August 1997 1 Rev 1.200 Philips Semiconductors Product , ; RGK = 1 k ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs tgt August 1997 2 Rev , currents, f = 50 Hz. August 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger , holding current IH(Tj)/ IH(25°C), versus junction temperature Tj. August 1997 0 4 Rev 1.200 , . PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). August 1997 5 Rev 1.200


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PDF OT223 BT134W BT134WRepetitive 500D 600D BT136 BT136D SC18 smd jsp smd triacs
1997 - lighting control by triac BT136

Abstract: triac bt136 BT134W BT136 600G 800G Bt136 application motor control
Text: exceed 3 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification , commutating voltage tgt Gate controlled turn-on time September 1997 CONDITIONS BT134WVDM =67% , , for sinusoidal currents, f = 50 Hz. September 1997 0 50 Tj / C 100 150 Fig , . September 1997 0 3.9 4 Rev 1.200 Philips Semiconductors Product specification Triacs , September 1997 5 Rev 1.200 Philips Semiconductors Product specification Triacs BT134W


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PDF BT134W OT223 BT134WBT134WBT134WRepetitive lighting control by triac BT136 triac bt136 BT136 600G 800G Bt136 application motor control
1997 - triacs

Abstract: BT139-800 equivalent BT137-800 Triacs BTA208 600B BT136-500E Triacs equivalent 500D BTA208-600B equivalent bt134 BT136
Text: -800G FOUR QUADRANT TRIACS SOT78 (TO220AB) October 1997 PAGE Philips Semiconductors , -800 BT136X-800E BT136X-800F BT136X-800G FOUR QUADRANT TRIACS SOT186A October 1997 PAGE , 1997 PAGE Philips Semiconductors Thyristors and Triacs Index TYPE NUMBER TECHNOLOGY , -800E BT138X-800F BT138X-800G FOUR QUADRANT TRIACS SOT186A October 1997 PAGE Philips , SOT428 (TO252) October 1997 PAGE Philips Semiconductors Thyristors and Triacs Index


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PDF BR100/03 BT131-500 BT131-600 BT132-500D BT132-600D BT134-500 BT134-500D BT134-500E BT134-500F BT134-500G triacs BT139-800 equivalent BT137-800 Triacs BTA208 600B BT136-500E Triacs equivalent 500D BTA208-600B equivalent bt134 BT136
1997 - BTA16-600B equivalent

Abstract: BTA16 800BW equivalent BT137 equivalent BT134 equivalent BTA08-600C equivalent BTA12-600B equivalent BTb12 equivalent TYN412 equivalent BTB16 800BW equivalent btb16 800cw equivalent
Text: BCR08AS8 BCR3AM12 BCR3AM8 BCR4AM12 BCR4AM8 BCR5AM12 BCR5AM8 February 1997 SGS-THOMSON SGS-THOMSON , -600SW BTA12-600C BTA12-600B BTA12-600CW BTA12-600C February 1997 THYRISTORS INDUSTRY STANDARD , -600H February 1997 SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST T1030-600W BTA12-600B BTA12-700CW BTA12 , -400A BTA06-400C BTA06-400TW BTA06-400A February 1997 THYRISTORS INDUSTRY STANDARD L4006L7 , MAC08MT1 MAC12D MAC12M MAC12N MAC15-10 February 1997 SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST


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PDF 16TTS08S 25TTS08S 2N6071 2N6071A 2N6073 2N6073A 2N6075 2N6075A 2N6342 2N6342A BTA16-600B equivalent BTA16 800BW equivalent BT137 equivalent BT134 equivalent BTA08-600C equivalent BTA12-600B equivalent BTb12 equivalent TYN412 equivalent BTB16 800BW equivalent btb16 800cw equivalent
1997 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF BT148W OT223 BT148WRepetitive OT223. OT223
1997 - BT148WR

Abstract: BT148W Thyristors application circuits thyristor sot223 500R 600R BT134W BT148 BT151 FR4 epoxy
Text: use of a gate to cathode resistor of 1k or less. October 1997 1 Rev 1.300 Philips , = 1 k tgt tq October 1997 2 Rev 1.300 Philips Semiconductors Product , ) , versus solder point temperature Tsp. October 1997 0 50 Tj / C 100 150 Fig , .9. Normalised holding current IH(Tj)/ IH(25°C), versus junction temperature Tj. October 1997 0 4 , October 1997 5 Rev 1.300 Philips Semiconductors Product specification Thyristors logic


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PDF OT223 BT148W BT148WRepetitive BT148WR Thyristors application circuits thyristor sot223 500R 600R BT134W BT148 BT151 FR4 epoxy
1997 - rgk 13 1 11 005 01

Abstract: BT134W BT151 BT169 BT169W SC18 pin configuration of BT169
Text: exceed 15 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification , V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 k tgt tq September 1997 2 Rev 1.200 , permissible rms current IT(RMS) , versus solder point temperature Tsp. September 1997 0 50 Tj / C , . September 1997 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction , laminate (35 µm thick). September 1997 5 Rev 1.200 Philips Semiconductors Product


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PDF OT223 BT169W BT169 rgk 13 1 11 005 01 BT134W BT151 BT169 SC18 pin configuration of BT169
1997 - BT168 Series

Abstract: BT134W BT151 BT168 BT168W BT169 BT169W pin configuration of BT169
Text: current should not exceed 15 A/µs. September 1997 1 Rev 1.100 Philips Semiconductors Product , September 1997 2 Rev 1.100 Philips Semiconductors Product specification Thyristors logic , (RMS) , versus solder point temperature Tsp. September 1997 0 50 Tj / C 100 150 Fig , . September 1997 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction , glass (1.6 mm thick), copper laminate (35 µm thick). September 1997 5 Rev 1.100 Philips


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PDF OT223 BT168 Series BT134W BT151 BT168 BT168W BT169 BT169W pin configuration of BT169
1997 - SOD100

Abstract: BT134W BYR29 BYR29F BYR2
Text: 1 Neglecting switching and reverse current losses January 1997 1 Rev 1.300 Philips , ; dIF/dt = 50 A/µs; Tj = 100 °C IF = 10 A; dIF/dt = 10 A/µs January 1997 2 Rev 1.300 , .3. Maximum forward dissipation PF = f(IF(AV); square wave where IF(AV) =IF(RMS) x D. January 1997 1A , (VF); parameter Tj January 1997 1 ms tp / s 0.1 10 s Fig.10. Transient thermal , to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". January 1997 5


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PDF BYR29F OD100 BYR29FRepetitive SOD100 BT134W BYR29 BYR2
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