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BT 151 thyristor

Abstract: BT thyristor 151 500 R BT thyristor thyristor BT bsm 25 op 120-b2
Text: Type designations Thyristors Rectifier T 930 S 18 T M C sym m etrically blocking T thyristor a sym m etrically blocking A thyristor limiting average forw ard 930 current (A) at tc= 85° C Ceram ic , F N 18 fa st thyristor , gatecathode interdigitated fast thyristor , central gate phase control thyristor limiting repetitive peak fo r ward and reverse off-state voltage in 100 V, 18 = 1800 V (A , 500 V/ps 1000 V/ps 50 V/ps 1000 V/ps B1.n S i-n Half-controlled thyristor modules T D 121 TD


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PDF 80oltage BT 151 thyristor BT thyristor 151 500 R BT thyristor thyristor BT bsm 25 op 120-b2
2008 - triacs BTA

Abstract: SM1L43 triac snubber ac motor BC557 in smd package triacs bt 12 Triac ACS108 controlling heater with triac ac motor control with triac universal motor speed control wash washing machine drain valve types
Text: high-voltage application. NXP Hi-Com triacs 1023 NXP Thyristor AG_v4.indd 1 29-05-2008 09:23:33 To , . 1023 NXP Thyristor AG_v4.indd 2 brb186 Horizontal axis washer 100 330 0V BC557 100 , washer Load Part number Valve/pump Motor 1023 NXP Thyristor AG_v4.indd 3 BTA201-800E(R , / 800 B/C 16 600 B/D/E/F BTA216 16 600 BT BTA216 BTA216X BTA216B 16 600 BT /D BTA316 16 600 / 800 B/C/E BTA316 BTA316X BTA316B 16 800 B


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Not Available

Abstract: No abstract text available
Text: SKKE 290F THYRISTOR BRIDGE,SCR,BRIDGE DQMK DQQK ORQKM S @TT % '40124H4 F0-H. 3), ()*+2*H)HE )7.,0+2)*5 D D OR%D S UVC % 'E2*< BWCX TC IYX Z( S BCV [$5 ¥CC ¥CC Symbol , *< +) 6.0+E2*j +) +.,42*0-E 4 077,)1< $0E. [$ A¥CC e ACCC T k BT l T k BT l T m V , RECTIFIER,DIODE, THYRISTOR ,MODULE Fig. 1 Typ. recovery charge vs. current decrease Fig. 2 Peak recovery , THYRISTOR BRIDGE,SCR,BRIDGE Dimensions in mm $0E. % T@ * The specifications of our components may not


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PDF 40124H4
thyristor BT 200

Abstract: thyristor bt 13 BT thyristor BT148-400R BT148 Mullard Thyristor thyristor BT 500R mullard bt M88110
Text: Thyristors BT148 SERIES THYRISTORS en ■Q Glass-passivated thyristor in SOT-82 envelope , accessories for SOT-82 envelopes). Z! Mullard February 1988 5 BT 148 SERIES _y \_ RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 1341. Anode to cathode BT 148-400 R 500 R , not recommended, higher off-state voltages may be applied without damage, but the thyristor may switch , I BT


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PDF BT148 OT-82 BT148-400 M88-1101/RC thyristor BT 200 thyristor bt 13 BT thyristor BT148-400R Mullard Thyristor thyristor BT 500R mullard bt M88110
BT thyristor

Abstract: thyristor BT thyristor bt 3A
Text: a ix Y S FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes (FRED) Pow er switches (IG BT , M O S F E T , BJT, G T O ) for applications in electronics are , by the turn-off behavior of the Rectifier Diode and Thyristor C h ip s T h e figures 3 a-c sh o w c ro s s sectional view s of the diode and thyristor chips in the passivation area. All thyristor , ) Diode chip, type D W P , D W F P c) Thyristor chip, type C W P Sub strate n + Fig. 2: Cross


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1998 - 3 phase bridge fully controlled rectifier

Abstract: BT thyristor single phase bridge fully controlled rectifier single phase fully controlled rectifier 3 phase rectifier thyristor bridge thyristor bridge circuit thyristor battery charger thyristor circuit single phase half controlled rectifier Semikron Semitop 3 footprint
Text: Anode Bridge Circuits B D BT DT BH DH Thyristor Circuits KQ KT UT Single-phase Back-to-back (W1C) Half-bridge (Thyristors in series) Three-phase Back-to-back (W3C) Thyristor /Diode , possible circuits (see table below) Voltage grade = Thyristor /Diode: VRRM / 100; IGBT: VCE / 100; MOS , Thyristor Bridge Three-Phase Thyristor Bridge Single-Phase, Half-Controlled Bridge Three-Phase


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LT 0216 diode

Abstract: No abstract text available
Text: SGS-THOMSON MDS50 RiilD(@lS©il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES â , CONNECTIONS 1 2 3 4 : Thyristor Gate (G) : Thyristor Cathode (K) : Thyristor Anode/Diode Cathode (I , =125°C 10 mA Tj=25°C 50 ¡iA 7^237 0 D bT 5 10 fc.3S MDS50 Fig. 1 : Maximun Average Power dissipation versus average on-state current. (Sinusoidal waveform : Thyristor or Diode) Fig , ) for different thermal resistances heatsink + contact. (Sinusoidal waveform : Thyristor or Diode) P


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PDF MDS50 MDS50 LT 0216 diode
2N4444 equivalent

Abstract: 2N4441 2N4444 2N4443 2N4442 thyristor BT 200 2N4441 Motorola 2n4443 equivalent motorola thyristor 339 BT thyristor
Text: forward or reverse blocking capability, thyristor devices should not be tested with a constant current , potential on the MOTOROLA THYRISTOR DEVICE DATA 3-39 MOTOROLA SC iDIODES/OPTO} 2N4441 thru 2N4444 Qà , , Vd = Rated VpRM> * Bt — 1 — Ils Circuit Commutateci Turn-Off Time (lTM = 5 A, iR = 5 A) (lTM = 5 , ), soldering temperatures shall not exceed + 225°C. MOTOROLA THYRISTOR DEVICE DATA 3-40 MOTOROLA SC OIODES , 10 20 30 I. TIME (ms) 50 70 100 200 300 500 700 1000 2000 3000 MOTOROLA THYRISTOR DEVICE DATA


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PDF M4444 D07fl 2N4444 equivalent 2N4441 2N4444 2N4443 2N4442 thyristor BT 200 2N4441 Motorola 2n4443 equivalent motorola thyristor 339 BT thyristor
16 amp SCR application

Abstract: SCR 214 s635 S525 scr 6 Ampere scr bt series 200 A SCR 75 Volts 10 amp heat sink of scr thyristor BT 200 thyristor BT
Text: HUTSON INDUSTRIES bT DE J 4b4Ll7DD □□□□m t. | HUTSON INDUSTRIES mimmm^mmmmmnismfm , power dissipated between gate and cathode, of a reverse blocking thyristor . Average On-State or , a reverse blocking thyristor . Instantaneous Forward Breakover Voltage (Open Gate) — VF,i„,.> â , €” Critical dv/dt — The minimum value of the rate of applied forward voltage which will cause the thyristor , VIEW LANE DALLAS, TEXAS 75234 (214) 241-3511 TWX 910-860-5537 PFSS -oooOZ-3t HUTSON INDUSTRIES bT DE


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C106 thyristor

Abstract: C106D motorola thyristor c106d C106 thyristor BT 200 C106d silicon controlled rectifier BT thyristor 106 C1060 c106d thyristor BT thyristor
Text: value ¿-34 I Motorola Thyristor Device Data t <. kjí V-*. I ■j . - i ' . ' . C106 Series , 'C, Rqk - 1000 Ohms. Vq - Rated Vqrm) dv/dt — 8 — V/jis Tum-On Time < Bt — 1 2 — fis Turn-Off , ) Motorola Thyristor Device Data 5? FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION junction temperature - , Competitive C-106 Package 3-36 . Motorola Thyristor Device Data -*• : - Ä*


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PDF O-225AA) C-106 C106 thyristor C106D motorola thyristor c106d C106 thyristor BT 200 C106d silicon controlled rectifier BT thyristor 106 C1060 c106d thyristor BT thyristor
BCR1AM-12A equivalent

Abstract: TRIAC BT 127 BCR1AM-12(A) equivalent triac BT 113 triacs BT 412 BS08A
Text: character­ istics of a bilateral thyristor . The device is designed to switch at 7 to 9 volts with a 0.01 , Inches Trigger Circuits for Thyristor or Triac, Oscillators, Timers Millimeters A 0.492 Min , Non-trigger Voltage TT-2 72t J4b21 D D D Û BT ? Ô3T 0.2 ±0.01 - 10 (aA - %/°C , BS08A Silicon Bilateral Switch APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT STATIC , PACKAGE THYRISTORS AND TRIACS MARKING SURFACE TO-92 Package Thyristor CR02AM, CR03AM, CR04AM


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PDF BS08A_ BS08A MAX/10 BCR1AM-12A equivalent TRIAC BT 127 BCR1AM-12(A) equivalent triac BT 113 triacs BT 412
2002 - Effects of Temperature on Thyristor Performance

Abstract: ET 3005 AN4870 thyristor BT 200
Text: AN4870 Application Note AN4870 Effects Of Temperature On Thyristor Performance Application , reliability. During its working life a thyristor can experience a wide range of temperatures. Operating at , short circuit when the device is protected by a fuse. In 50Hz circuits the thyristor may often have , 140 160 Thyristor junction temperature - (°C) 180 200 Fig.1 Thyristor de-rating curves 1 , Fig.2 Thyristor failure rate vs applied voltage as a percentage of VDRM (rated) and junction


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PDF AN4870 AN4870 AN4870-3 AN4840 Effects of Temperature on Thyristor Performance ET 3005 thyristor BT 200
skch26

Abstract: B1151 BH26 BH-26
Text: 125°C Tv) = 125°C; Vdrm .Vrriv TVj Tvj Tvj Tvj Thyristor Diode 2,45 V 1,1V 20 m ß 1,85 V 0,85 , 6V thyristor , case temperature 'Kov) 100 P C 60 40 1 S S S S K K K K BT BH CH CH 26 26 26 27 -


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PDF SKBT26 SKCH26 P1/120 00V/ps 50mA/15Q B13bfa71 fil3bb71 SKYT35 M7-K16-5? B1151 BH26 BH-26
2009 - Z0103MN

Abstract: BT152-R BT151-RT Z0107MN BT1308-D bt148 BT169D-L BT151L bt138 sot223 SOT404
Text: B/E C B/D/E/F D CT B/C/E C B/E ET B/C B/D/E/F BT BT /D B/C/E B B/C BT B BTA2008 , Thyristor part numbering Package identifier 200 8 SOT533 (IPAK) BT151X-650R 600 4


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PDF OT78D OT186A O220AB) MAC97A6 MAC97A8 BT1306-D BT1308-D Z00607MA Z0103MN BT152-R BT151-RT Z0107MN BT1308-D bt148 BT169D-L BT151L bt138 sot223 SOT404
triac BT 40 amp

Abstract: thyristor BT 200 HUTSON INDUSTRIES TRIAC
Text: HUTSON INDUSTRIES bT DE l M b W D O DDP P 5 1 5 | hUTSON INDUSTRIES ITRIAC'S mm. Û 60 AMPERE PRESS-FIT SERIES POWER TRIACS tm n ÈÈ à tìB uStaâà«ii«aM it£ âliljÉ É i PR ES S-FIT This power triac series is the result of Hutson's advanced thyristor engineering and manufacturing technology. The W press-fit and stud-mount packages are her metically sealed and the center-gate design results in low switching losses and improved commutating d'v/dt and di./dt characteristics


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2001 - applications of mos controlled thyristor

Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt , Bipolar Transistor). This device, while similar in structure to the MOS-gated thyristor ,[4,5] is , ) and (b); they are similar to those of an MOS-gated thyristor , except for the presence of the , value, as is typical of a thyristor . Device Characterization Two different lots of IGBT structures , of the IGBTs is similar to that of a thyristor and can be forced to latch under sufficiently high


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BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Text: Vorwort genannten Literatur zu entnehmen. 2.1.1. D er T hyristor Der Thyristor ist ein Gleichrichter , symmetrischer oder bidirektionaler Thyristor genannt, ist ein 2seitig steuerbarer Gleichrichter. Er eignet sich , Bild 2.6 gedrückt, zündet der zu überprüfende Thyristor , sofern er in Ordnung ist, und die Lampe H l leuchtet auf. Bei einem defekten Thyristor bleibt H l dunkel. Große Leistungsthyristoren erfordern allerdings einen entsprechenden Zündstrom. Ist der Zündstrom zu gering, wird der sonst einwandfreie Thyristor


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Westinghouse thyristor 1000A

Abstract: R220CH08FJ0 thyristor BT 200 BT thyristor 106
Text: SEMICONDUCTORS Technical Publication TR220C Issue 2 July 1984 High Frequency Inverter Grade Capsule Thyristor , operating Frequency The maximum operating frequency, fmax, is set by the time required for the thyristor to , connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of , these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. 6. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse


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PDF 000E401 TR220C R220C 200AC Westinghouse thyristor 1000A R220CH08FJ0 thyristor BT 200 BT thyristor 106
TAG thyristor

Abstract: LM267S thyristor tag a2 thyristor TAG 103 BT150 BT thyristor tag 453 400 thyristor BT 200
Text: N AUER PHILIPS/DISCRETE bTE D ■bbSBTBl OOETETB T3S b I lbU IAPX THYRISTORS Glass-passivated thyristor in TO-220AB envelope, featuring sensitive gate triggering as low as 200 M-Particularly suitable in applications where high "fatigue stresses due to thermal cycling and repeated switching are , not recommended, higher off-state voltages may be applied without damage, but the thyristor may , Manufacturer N AMER PHILIPS/DISCRETE Thyristors tiTE D ■bbSB^l 0GE7ET7 bflü BT 150 IAPX yv MOUNTING


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PDF O-220AB O-22QAB M2678 TAG thyristor LM267S thyristor tag a2 thyristor TAG 103 BT150 BT thyristor tag 453 400 thyristor BT 200
N25U

Abstract: ifgrw
Text: SC100C Am e r i c a n M i c r o s e m i c o n d u c t o r Thyristor SC100C SC 100C For gtneral phase £Ojur:>l appUeaUui» *uds at, speed efaitr uk. light controls and aekkra ete. ·&aner*t power ¡ m · I t» 10CA, lr « B - i6 C A *>*cn volute up u t200v · K ^h sury« currant a t 220GA · Stunt type M axim u m R , 8 ». BT i>» 1» Awiftfcf* OrvSM ta CMNhArtt JA} i« iM Ambl«nt T o n v ^ a tu r« ! A v«r*|« 0


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PDF SC100C t200v 220GA SCIQQC40 lCttCC-120 N25U ifgrw
rf pogo pin

Abstract: SMD W2f w2f smd jx 8114 high current pogo pin AVX smd film capacitors CF AVX 9156 AVX film chip capacitors RC ARRAY DISCRETE CAP kyocera design guide
Text: Film Capacitors -CF/BF/ BT /ASC SMT (CF) and boxed radial (BF/ BT ) plus application specific capacitors , ground) in PSU's, motors, thyristor switches, etc. 100pFto4 7nF. Approved by VDE/UL/CSA/SEV/EMQ


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PDF 972-669-2nterface -61v/62o/65n 100pFto4 rf pogo pin SMD W2f w2f smd jx 8114 high current pogo pin AVX smd film capacitors CF AVX 9156 AVX film chip capacitors RC ARRAY DISCRETE CAP kyocera design guide
kluber

Abstract: KLUBER WOLFRACOAT C Thyristor BT 102 water cooled thyristor assembly kluber wolfracoat thyristor ys 150 017 NT102 295kW Thyristor ys 150 103 RC snubber thyristor design
Text: Thyristor und Kühlkörper darf die Abweichung von der Ebenheit sowie die Rauhtiefe Rz des Kühlkörpers 10 Pm , respectively of thyristor cases and heatsinks, as well as their insulation must not be damaged and must be free of all foreign matter. - in the contact area of thyristor and heatsink the deviation of flatness , between thyristor and heatsink, it should also be coated. 8.1 Scheibengehäuse, Bauform T Thyristoren , /insulator body Thyristor / thyristor ZentrierstifVcentring pin Kühlkörper/heatsinks Isolierbuchse


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nte5455

Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
Text: thyristor to the on state. This value is positive for P-Gate and negative for N-Gate thyristors. 1-73 See , maximum gate current required to switch a thyristor to the on state. This value is positive for P-Gate and , D ■bMBiaST DGQ2bb2 TIB «NTE SILICON GATE CONTROLLED SWITCH (GATE TURN OFF THYRISTOR ) _-— , (reverse-blocking triode thyristor ) intended for high speed switching applications such as power inverters , T0220 11C 8 80 750 40 4 2.4 - DESCRIPTION: The NTE308 arid NTE310 series integrated thyristor


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PDF b431SSci NTE5480 NTE5400 NTE5411 NTE5452 NTE5453 NTE5470 NTE5442 NTE5481 NTE5461 nte5455 nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
iec384 14ii

Abstract: xg-hs capacitor xg-vs IEC 384-14II XG-VS capacitor xg-hs EN60252 HSFNT HSFPU 10uF 450v tv CAPACITOR
Text: and TV Circuits 3) Thyristor and Triac Appliances, such as : Dimmers DIAGRAM OF DIMENSIONS S , Grinders, Audio and TV Circuits 3) Thyristor and Triac Appliances, such as : Dimmers (a) Between , Grinders, Audio and TV Circuits 3) Thyristor and Triac Appliances, such as : Dimmers (a) Between , : 10831-4630-0010/31UNI F35/ BT (0.1 ~ 15.0µF/250V.AC) 10831-4630-0009/31HXY F35/ BT (0.1 ~ 8.0 µF/400V.AC) Din , Motor Application (a) 10831-4630-0009/31HXY F35/ BT (0.1 ~ 8.0µF/450V.AC) Din EN60252 (VDE0560 Teil 8


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PDF 000hrs. iec384 14ii xg-hs capacitor xg-vs IEC 384-14II XG-VS capacitor xg-hs EN60252 HSFNT HSFPU 10uF 450v tv CAPACITOR
1994 - TRIAC BT 812

Abstract: induction cooker schematic diagram schematic diagram inverter 2000w anti parallel scr firing circuit 2kw TRIAC dimmer control Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips construct and test a mosfet based pwm chopper circuit free philips igbt induction cooker BT151 motor speed control
Text: Power Control with Thyristors and Triacs 6.1 Using Thyristors and Triacs 6.2 Thyristor and Triac , device rating. Brief summary of the thyristor family The term thyristor is a generic name for a , thyristor . If an ohmic connection is made to the first p region and the last n region, and no other connection is made, the device is a diode thyristor . If an additional ohmic connection is made to the , thyristor . If an ohmic connection is made to both intermediate regions, the device is a tetrode thyristor


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