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BSX33
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BSX33 datasheet (18)

Part ECAD Model Manufacturer Description Type PDF
BSX33 BSX33 ECAD Model Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original PDF
BSX33 BSX33 ECAD Model Micro Electronics Medium Power Amplifier and Switches Scan PDF
BSX33 BSX33 ECAD Model Micro Electronics Semiconductor Device Data Book Scan PDF
BSX33 BSX33 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
BSX33 BSX33 ECAD Model Others Transistor Replacements Scan PDF
BSX33 BSX33 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
BSX33 BSX33 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
BSX33 BSX33 ECAD Model Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BSX33 BSX33 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
BSX33 BSX33 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF
BSX33 BSX33 ECAD Model Others Shortform Electronic Component Datasheets Scan PDF
BSX33 BSX33 ECAD Model SGS-Ates Shortform Data Book 1977/78 Scan PDF
BSX33 BSX33 ECAD Model SGS-Ates Misc. Data Book Scans 1975/76 Scan PDF
BSX33 BSX33 ECAD Model SGS-Ates Small Signal Transistors 3rd Edition 1978 Scan PDF
BSX33 BSX33 ECAD Model SGS-Ates Semiconductor Data Book 1976/77 Scan PDF
BSX33 BSX33 ECAD Model STMicroelectronics Shortform Data Book 1988 Scan PDF
BSX33CSM BSX33CSM ECAD Model Semelab Bipolar NPN Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Original PDF
BSX33DCSM BSX33DCSM ECAD Model Semelab Dual Bipolar NPN Devices in a Hermetically Sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Original PDF

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BSX33

Abstract: No abstract text available
Text: SGS-THOMSON R!tlD(EæilLI(g'iri©iD(SS BSX33 HIGH-VOLTAGE, HIGH-CURRENT SWITCH D E S C R IP T IO N The BSX33 is a silicon planar epitaxial NPNtran-sistor in Jedec TO-18 metal case, designed , Temperature December 1988 1/5 BSX33 T H E R M A L DATA Rth j-case Rth j-amb Thermal Resistance , BSX33 DC Current Gain. Collector-emitter Saturation V o lta g e . Base-emitter Saturation Voltage , Cutoff Current. G -3 117 ^ 7# T SGS-THOMSON raeRoaLieTfRwes 3/5 BSX33 TO-18 MECHANICAL


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PDF BSX33 BSX33 500mA
1994 - BSX33

Abstract: No abstract text available
Text: BSX33 HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX33 is a silicon planar epitaxial NPN , 1988 BSX33 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal , ­ IB2 = 7.5 mA * Pulsed : pulse duration = 300µ s, duty cycle = 1%. 2/5 BSX33 DC Current , Current Gain. Collector-base Capacitance. Collector Cutoff Current. 3/5 BSX33 TO , 4/5 BSX33 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON


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PDF BSX33 BSX33 500mA
BSX33

Abstract: No abstract text available
Text: 3QE D ■T'ÌS^SB? DQ31UÒY H m -p2>S-[| SCS-THOMSON _ BSX33 s G S-THOMSON HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX33 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for high voltage and high current switching applications. It features useful current , , Storage and Junction Temperature - 55 to 200 eC December 1988 1/3 239 _ BSX33 * THOMSON_ 30E T , . Collector-base Capacitance. CCBO (pF) BSX33 T—35—11 Collector-emitter Saturation Voltage. W2 lc&nM High


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PDF DQ31UÃ BSX33 500mA
BSX33

Abstract: No abstract text available
Text: -18! 193 7/76 BSX33 THERMAL DATA Rth i-case Thermal resistance junction-case max 97 °C/W Rth j-amb , 194 BSX33 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max. Unit , Collector-emitter saturation voltage voltage 195 BSX33 Base - emitter saturation voltage High frequency current


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PDF 100jUA BSX33 300/xs, BSX33
2011 - 2SC1313

Abstract: bc182c NPN 2sC1685 2SC3247K 2SC734GR 2SC1815LY 2SC1815L-G 2SC1815LBL 2SC1815L 2S01623
Text: 2S01852 2SC3052 2N339 2N5189 BC324 BC324 BCW44 BC254 BC255 BFY56B BSX33 BSX33 IT128 2N4879 ~~gJ


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PDF 2SC1815LGR 2SC2458LGR 2SC3134H6 2SC3361S6 2SC734GR TEC90140 2S01623T TE01402E BC182K BC182KB 2SC1313 bc182c NPN 2sC1685 2SC3247K 2SC1815LY 2SC1815L-G 2SC1815LBL 2SC1815L 2S01623
2002 - Not Available

Abstract: No abstract text available
Text: BSX33 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT) HFE ft


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PDF BSX33 O206AA) 1/10m 19-Jun-02
2002 - Not Available

Abstract: No abstract text available
Text: C1 1µF C5 1000µF MUTE PLAY 5V 0 MUTE Q1 BSX33 R2 15K C2 100µF IN (L) 7 , OUT (L) IN- (L) - 1µF 15K 4 8 BSX33 30K 4.7Ω 0.1µF 9 1µF OUT


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PDF TDA7269A Multiwatt11 TDA7269A
2002 - tda7269a

Abstract: BSX33
Text: 0 MUTE Q1 BSX33 R2 15K C2 100µF IN (L) 7 + 4 8 IN- (L) 9 C4 1µF , MUTE + OUT (L) IN- (L) - 1µF 15K 4 8 BSX33 30K 4.7 0.1µF 9 1µF


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PDF TDA7269A Multiwatt11 TDA7269A BSX33
2002 - BSX33

Abstract: No abstract text available
Text: BSX33 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) Nom. 3 1 2 TO18 (TO206AA) PINOUTS 1 ­ Emitter Parameter 2 ­ Base 3 ­


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PDF BSX33 O206AA) 1/10m 2-Aug-02 BSX33
2002 - BSX33

Abstract: No abstract text available
Text: BSX33 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT) hFE ft


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PDF BSX33 O206AA) 1/10m 16-Jul-02 BSX33
BFR99

Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
Text: €” 50 BSX33 0.3 150 60 800 500 25 75/260 100 BC 377 0.7 500 300 typ. — 375 40 75/260 100 BC 378


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PDF BFR38 BSX33 2N956 BFR99 BC377 UHF UHF Transistors transistor 2n 3839 t 3866 transistor BFX89 uhf amplifier
BU102

Abstract: BDX71 40636 2N3055V BSV95 BDX73 BSX27 BU100A BD663B transistor bu102
Text: BSX32 40 0.01-500 — 22 40 60-150 100 19082H 66 BSX33 55 0.1-500 _ 120 350 40-80 150 19083F 65 BSX39


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PDF BSV90 30801C BSV91 0802A BSV92 30803X BSV95 4774A BSX20 19077B BU102 BDX71 40636 2N3055V BDX73 BSX27 BU100A BD663B transistor bu102
BFR99

Abstract: BFR38 BC377 BFR36 BFR99A bfr18 2N3137 2N5109 LH105 t 3866 transistor
Text: ) (mA) (MHz) (ns) (mW) 55 50/— 50 BSX33 0.3 150 60 800 500 25 75/260 100 BC 377 0.7 500 300 typ. â


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PDF BFY90 2N918 BFX73 BFR99A 2N3137 BFR36 2N5109 LH1056 LH1061 BSX33 BFR99 BFR38 BC377 bfr18 LH105 t 3866 transistor
Transistor BSX 33

Abstract: BSX33 Transistor BSX 95
Text: 50mA VCE = 10V f = 20MHz 60 90 MHz 178 BSX33 ELECTRICAL CHARACTERISTICS (continued) Parameter Test


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PDF O--18 100jLiA 300jus, Transistor BSX 33 BSX33 Transistor BSX 95
BU102

Abstract: 2N914 transistor bu102 BD663B BDX71 bsx30 BSX26 2N2475 2N915 BSV91
Text: 19082H 66 BSX33 55 0.1-500 _ 120 350 40-80 150 19083F 65 BSX39 20 10-300 8 9 15 40-120 30 19085B 65


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PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X BU102 transistor bu102 BD663B BDX71 bsx30 2N2475 2N915 BSV91
BSY86

Abstract: BSW65 BSY90 bsv82 BSW61 BSY87 BFY94 BSW39 BFY68 BFY67
Text: 150 10 0.3 0.15 300 8 - BSW65 N TO-39 800 1 80 30 500 5 0.4 0.5 80+ 35 BSX33 N TO-18 500 1 40 40


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PDF BFY67 BFY68 BFY72 BFY94 BSS59 BSV16 BSV82 BSV84 BSY71 BSY81 BSY86 BSW65 BSY90 BSW61 BSY87 BSW39
BSW66

Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
Text: REQ NPN T018 15 0.5 40-120 l/10m 500H 0.36 BSX32 NPN T039 40 1 60-150 1/0.1 300H 0.8 BSX33 HR NPN


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PDF BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 120typ 2/10m 40min BSS50 BSW66 BU208A BSW67
1997 - BSX33

Abstract: MULTIWATT11 TDA7499
Text: 5V 0 MUTE Q1 BSX33 R2 15K C2 100µF IN (L) 7 4 IN- (L) 9 C4 1µF IN (R


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PDF TDA7499 Multiwatt11 TDA7499 100nF BSX33 MULTIWATT11
bsy85

Abstract: BSW54 BSW65 MA8003 BSY52 BSY86 bsy90 CL168 TO-92B BSW61
Text: 0.15 300 8 - BSW65 N TO-39 800 1 80 30 - 500 5 0.4 0.5 80+ 35 — BSX33 N TO-18 500 1 40 40 _ 150 10


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PDF BSW54 BSW61 BSW62 BSW63 BSW64 BSW65 BSX33 BSX45 BSX46 BSX47 bsy85 MA8003 BSY52 BSY86 bsy90 CL168 TO-92B
power amplifier IC 4440

Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Text: ) (mA) (MHz) (ns) (mW) 55 50/— 50 BSX33 0.3 150 60 800 500 25 75/260 100 BC 377 0.7 500 300 typ. â


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PDF TQ-60 T0-60 BSX33 2N956 power amplifier IC 4440 BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
2001 - 2N3907

Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 (cont) TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont) Bipolar Bipolar Bipolar Bipolar Linear Bipolar 2N2604-05 2N2907A-T46 2N3485-86 /A 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 BSX33 ,36 BSX39-40 BSX52 A/B


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PDF 2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
2005 - TDA7499L

Abstract: VS11V TDA7499 AMPLIFIER single output HZIP-11 TDA7499-J11-T TDA7499
Text: OUT (L) 8 IN- (L) R4 30K R5 1K + - Q1 BSX33 R2 15K C2 100F R8 4.7 C7 0.1F C10 470F R9 4.7 C8


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PDF TDA7499 TDA7499 HZIP-11 TDA7499L TDA7499-J11-T TDA7499L-J11-T HZIP-11 QW-R107-032 TDA7499L VS11V TDA7499 AMPLIFIER single output
2N3055

Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
Text: BFX38 BFX39 BFX40 BFX79 BFX80 BFX81 BFY81 BFY82 BFY83 BFY84 BSV64 BSW66 BSW67 BSW67A BSW68 BSW68A BSX33


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PDF U3158. BUV22 BUV23 BUV26 BUV39 BUV47 BUV50 BUV51 BUV52 BUV61-CECC-QR 2N3055 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
BU104

Abstract: BSX21 BU103 8SS44
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o May 1998 Description CECC Polarity Package lc_cont Hfe_at V c e lc n Pd Vceo BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC BSW66A BSW66A CECC BSW67 BSW67CECC BSW67A BSW67A CECC BSW68 BSW68 CECC BSW68A BSW68A CECC BSX19 BSX20 BSX20CSM BSX21 BSX30 BSX32 BSX33 BSX36 BSX36CSM


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PDF BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103
1996 - TDA7269

Abstract: D95AU316 BSX33 MULTIWATT11
Text: 15K C2 100µF IN (L) Q1 BSX33 3 5 7 + 4 8 IN- (L) 9 C4 1µF IN (R


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PDF TDA7269 Multiwatt11 TDA7269 10thout D95AU316 BSX33 MULTIWATT11
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