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  You can filter table by choosing multiple options from dropdownShowing 23 results of 23
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BST82 Philips Semiconductors ComS.I.T. 6,000 - -
BST82 Nexperia Farnell element14 1,660 £0.10 £0.10
BST82 Nexperia element14 Asia-Pacific 3,514 $0.51 $0.51
BST82 Chip One Exchange 24 - -
BST82 NXP Semiconductors Chip One Exchange 2,315 - -
BST82 Philips Semiconductors Bristol Electronics 110 $0.26 $0.13
BST82 Philips Semiconductors Bristol Electronics 2,689 - -
BST82 Nexperia element14 Asia-Pacific 3,514 $0.51 $0.51
BST82,215 Nexperia element14 Asia-Pacific - $0.09 $0.08
BST82,215 Nexperia Avnet - €0.08 €0.07
BST82,215 Nexperia Avnet - $0.06 $0.05
BST82,215 Nexperia Future Electronics - $0.06 $0.06
BST82,215 Nexperia Future Electronics - $0.09 $0.07
BST82,215 Nexperia RS Components 835 £0.09 £0.08
BST82,215 Nexperia Chip1Stop 12 $0.45 $0.45
BST82,215 Nexperia Chip1Stop 40 $0.11 $0.11
BST82,215 Nexperia Chip1Stop 95 $0.32 $0.20
BST82,215 Nexperia Chip1Stop 18 $0.14 $0.14
BST82,215 Nexperia Avnet - $0.11 $0.10
BST82,235 Nexperia Avnet - $0.06 $0.05
BST82.215 Philips Semiconductors Chip One Exchange 8,220 - -
BST82215 NXP Semiconductors Rochester Electronics 1,190 $0.11 $0.09
BST82215 Philips Semiconductors ComS.I.T. 11,400 - -

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BST82 datasheet (12)

Part Manufacturer Description Type PDF
BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
BST82 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
BST82 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
BST82 Zetex Semiconductors SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
BST82 Others Semiconductor Master Cross Reference Guide Scan PDF
BST82 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BST82-03 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
BST82,215 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.19 A; R<sub>DS(on)</sub>: 10000@5V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BST82,235 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.19 A; R<sub>DS(on)</sub>: 10000@5V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BST82T/R NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.19 A; R<sub>DS(on)</sub>: 10000@5V mOhm; V<sub>DS</sub>max: 100 V Original PDF
BST82TR Philips Semiconductors channel enhancement mode field-effect transistor Original PDF
BST82T/R Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

BST82 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - BST82

Abstract: 02p SMD TRANSISTOR msa63 MBB692 MSB003 transistor smd marking dk BST82 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS , BST82 QUICK REFERENCE DATA N-channel enhancement mode vertical D-MOS transistor in SOT23 , vertical D-MOS transistor BST82 RATINGS Limiting values in accordance with the Absolute Maximum , specification N-channel enhancement mode vertical D-MOS transistor BST82 CHARACTERISTICS Tj = 25 °C , N-channel enhancement mode vertical D-MOS transistor VDD = 50 V handbook, halfpage BST82


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PDF BST82 SC13b SCA54 137107/00/01/pp12 BST82 02p SMD TRANSISTOR msa63 MBB692 MSB003 transistor smd marking dk BST82 TRANSISTOR
1997 - BST82

Abstract: SMD TRANSISTOR MARKING BR BST82 TRANSISTOR MSB003 SMD TRANSISTOR MARKING DE smd transistor marking A1 smd 4814 Q 817 transistor smd marking dk smd transistor A1
Text: DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS , BST82 QUICK REFERENCE DATA N-channel enhancement mode vertical D-MOS transistor in SOT23 , vertical D-MOS transistor BST82 RATINGS Limiting values in accordance with the Absolute Maximum , N-channel enhancement mode vertical D-MOS transistor BST82 CHARACTERISTICS Tj = 25 °C unless , enhancement mode vertical D-MOS transistor BST82 Fig.2 Switching times test circuit. Fig.4 Tj = 25


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PDF BST82 SC13b SCA54 137107/00/01/pp12 BST82 SMD TRANSISTOR MARKING BR BST82 TRANSISTOR MSB003 SMD TRANSISTOR MARKING DE smd transistor marking A1 smd 4814 Q 817 transistor smd marking dk smd transistor A1
2000 - BST82

Abstract: HZG303
Text: Product specification; third version; supersedes BST82_CNV_2 of 970623. Converted from VDMOS (Nijmegen , BST82 N-channel enhancement mode field-effect transistor Rev. 03 - 26 July 2000 Product , TrenchMOSTM1 technology. Product availability: BST82 in SOT23. 2. Features s s s s TrenchMOSTM , BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick , specification Rev. 03 - 26 July 2000 2 of 13 BST82 Philips Semiconductors N-channel enhancement


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PDF BST82 BST82 03ab44 HZG303
2000 - Not Available

Abstract: No abstract text available
Text: 20000726 CPCN Description HZG303 Product specification; third version; supersedes BST82_CNV_2 , BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product , TrenchMOS™1 technology. Product availability: BST82 in SOT23. 2. Features I I I I TrenchMOSâ , BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick , BST82 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa17


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PDF BST82 BST82 03ab44
02p SMD TRANSISTOR

Abstract: sot23 02p BST82 smd transistor marking TL MBB076
Text: transistor BST82 DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage Vds , transistor BST82 CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage , transistor BST82 v00 = 50v TL o —1 1— ci- son r i fa 7Z88773.1 Fig.2 Switching times test , . April 1995 6 Philips Semiconductors Product specification N-channel enhancement mode vertical BST82 , enhancement mode vertical BST82 D-MOS transistor PACKAGE OUTLINES Plastic surface mounted package; 3 leads


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PDF BST82 sot23 02p SMD TRANSISTOR sot23 02p BST82 smd transistor marking TL MBB076
02p SMD TRANSISTOR

Abstract: smd transistor marking TL BST82 TRANSISTOR transistor AY 6 smd TRANSISTOR SMD MARKING M Y R Y SMD TRANSISTOR TRANSISTOR SMD MARKING 2 HA sot23 02p BST82 TL MARKING SMD TRANSISTOR
Text: ■bbS3131 0023^5=1 SBM ■APX N AMER PHILIPS/DISCRETE b?E D BST82 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope , Manufacturer ■I bbS3^31 □DE3cìbD 2Tb HAPX BST82 11 N AflER PHILIPS/DISCRETE b?E J> RATINGS Limiting , BST82 vnn -50 V 10V I- .-TL son Bfe 7Z88773.1 ■10% 90% •off 1000 'D ImAI 100 Fig , Manufacturer BST82 ■bb53131 OOEB^ba 071 ■APX N AMER PHILIPS/DISCRETE b7E » _y v_ 100 150 T, (°C


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PDF bbS3131 BST82 7Z21984 bb53131 RDSonat250C 02p SMD TRANSISTOR smd transistor marking TL BST82 TRANSISTOR transistor AY 6 smd TRANSISTOR SMD MARKING M Y R Y SMD TRANSISTOR TRANSISTOR SMD MARKING 2 HA sot23 02p BST82 TL MARKING SMD TRANSISTOR
02p SMD TRANSISTOR

Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
Text: BST82 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and , Marking: 02p © * top view r December 1990 605 BST82 _J V RATINGS Limiting values in accordance with the , mode vertical D-MOS transistor BST82 V_ Vnn-BOV 10V i-1 o-FL 1000 id (mA) 100 S0(2| t, vtol 7z88773.1 , 100 WO Fig.7 Power derating curve. \ f December 1988 607 BST82 k 2,5 1,5 0,5 -50 0 50 100 150 Tj (°C


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PDF BST82 BST82 RDSonat25Â 02p SMD TRANSISTOR BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
1997 - FET SOT23 60V

Abstract: BST82
Text: BST82 SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I BST82 I Issue 2 - October 1997 PARTMARKING DETAIL ­ O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage (non repetitive peak tp 2ms) V DS(sm) 100 V Continuous Drain Current at T amb=25°C ID 175 mA Drain Current Peak I DM 600 mA Gate-Source Voltage V GS ± 20 V Max Power Dissipation at


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PDF BST82 175mA, FET SOT23 60V BST82
02p SMD TRANSISTOR

Abstract: No abstract text available
Text: ■bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor , 569 ■bbS3c 131 0 0 5 3 ^ 0 5Tb H A P X BST82 1 1 N AMER PH IL IPS /DI SCRE TE , 1993 80 V pF pF ns ns ns ns ■bbSBRBl ODEBIbl 13E H A P X BST82 N-channel , .7 Power derating curve. | ^ J u l y 1993 571 11 APX bbSBTBl QQSBTbS U7*\ BST82 N AMER


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PDF bbS3131 BST82 175DSon 02p SMD TRANSISTOR
2009 - BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 PMV65XP IRLL014N BSP250 FDC638APZ
Text: 2N7002E 2N7002F 2N7002 PMZ760SN BST82 BSH114 BSS123 PMV213SN 1) PML260SN PML340SN , PHT8N06LT PHT4NQ10LT PHT4NQ10LT PHT6N06LT PHT6N06LT BSP89 BSP89 BSP225 BST82 BST82 2N7002 2N7002


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PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 PMV65XP IRLL014N BSP250 FDC638APZ
Philips MARKING CODE

Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSN20 MARKING BSS84 MARKING CODE marking M8p marking pKX sot23 2N7002 PHILIPS SOT323 702 sot23
Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 BST86 BST120 BST122 PMBF107 PMBF170 2N7002 MARKING CODE M8p M8t SP KA SA KB KM 02p KN KO LM LN pKz pKX 702 1998 Apr 10 24


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PDF OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 Philips MARKING CODE sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSN20 MARKING BSS84 MARKING CODE marking M8p marking pKX sot23 2N7002 PHILIPS SOT323 702 sot23
1998 - 2N7002 PHILIPS MARKING

Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 sot23 02p codes marking 2N7002 PMBF170 pkx BSN20 MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82 02p BST84 KN BST86 KO BST120 LM


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PDF OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 2N7002 PHILIPS MARKING 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 sot23 02p codes marking 2N7002 PMBF170 pkx BSN20 MARKING
NE44

Abstract: No abstract text available
Text: BST82 mm Z e te x G m bH S treitfeld stra ße 19 D -81673 M ünchen T e lefo n: (49) 89 4 5 4 9 49 0 Fax: (49) 89 45 4 9 4 9 49 Z e te x pic. Fields N e w Road, C had d erto n , O ldham , O L9 -8 N P , U nited Kingdom . Te lep ho n e: (44)161 -627 5 105 (Sales), (44)161 -627 4 9 6 3 (G eneral Enquiries) Facsim ile: (44 )16 1 -6 27 5467 Z e te x (Asia) Ltd. 3 510 M etroplaza, T o w e r 2 Hing Fong , ENHANCEMENT MODE VERTICAL DM OS FET Issue 2 - O ctober 1997 PARTM AR KIN G D E T A IL - 0 2 BST82


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PDF BST82 NE44
2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82 02p BST84 KN BST86 KO BST120 LM BST122 LN PMBF107 pKz PMBF170 pKX 2N7002 702 1998 Apr 10 24 Philips Semiconductors


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PDF OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 2N7002 MARKING 702 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
2006 - FET SOT23 60V

Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZVN3310F SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I I Issue 2 - October 1997 PARTMARKING DETAIL ­ O2 BST82 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain Source Voltage Drain Source Voltage (non repetitive peak tp 2ms) Continuous Drain Current at T amb=25°C Drain Current Peak Gate-Source Voltage Max Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS V DS(sm) ID I DM V GS PD T j :T stg VALUE 80 100 175 600


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PDF ZVN3310F BST82 175mA, 150mA, FET SOT23 60V
BSS89 APPLICATION

Abstract: BST110 bsp106 bsn254 BS-208 BSN20 to92
Text: Philips Semiconductors Concise Catalogue 1996 Small-signal FETs VERTICAL D-MOSFETS OVERVIEW N/P leaded channel TO-92 other N N N N N N N N N N N N N N N N N P P P P P P P P P BSD254(A,AR) BSN304(A) BSN10(A) BST100 BST110 BS250 BSS110 BSS92 BS208 BSP204(A) BSP254(A) BSP304(A) BST70A BST72A BST74A BST76A BS170 BS107 2N7000 BSS88 BSS89 BSN254(A) BSS911 ) SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS PRODUCT DATA: PA G E S 43-45 surface-mount SOT23 BST82 PMBF170 PMBF107 2N7002 -


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PDF BSD254 BSN304 BSN10 BST100 BST110 BS250 BSS110 BSS92 BS208 BSP204 BSS89 APPLICATION bsp106 bsn254 BS-208 BSN20 to92
2006 - Not Available

Abstract: No abstract text available
Text: PART OBSOLETE - USE ZVN3310F SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I I Issue 2 - October 1997 PARTMARKING DETAIL ­ O2 BST82 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain Source Voltage Drain Source Voltage (non repetitive peak tp 2ms) Continuous Drain Current at T amb=25°C Drain Current Peak Gate-Source Voltage Max Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS V DS(sm) ID I DM V GS PD T j :T stg VALUE 80 100 175 600 ± 20 300


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PDF ZVN3310F BST82 175mA, 150mA,
sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Text: BF990A PMBFJ212 M70 BF990AR M85 BST80 KM PMBFJ308 M08 BF991 M91 BST82


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PDF OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174
mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS ZVNL110A cross reference equivalent of BS250 vn10km cross
Text: VP2020L TP0620N3-G BST80 TN2510N8-G TP2020L TP0620N3-G VP2410L TP0620N3-G BST82


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PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS ZVNL110A cross reference equivalent of BS250 vn10km cross
BSD20

Abstract: No abstract text available
Text: D T T D BSP108 BSP110 BST80 BST82 BSP109 SOT-223 SOT-223 SOT-89 SOT-23 SOT


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PDF BSD20* BSS83* BSD22* OT-143 E300/5 BSP108 BSP110 BST80 BSD20
TP0610T

Abstract: VN2110K1 ZVN3320F TN2124K1 vp3306 vp3310
Text: ^ S u p ertex ine. SOT-23 MOSFET Products Industry Part Number b v dss Polarity ^GStth) V (max) R dS(ON) ^DS(ON) C|SS ID (mA) PF C0ss PF V (min) Il (max) VGS (V) 85 7.5 5 14 - - lD (mA) il (max) Ve s (V) 50 500 200 -200 - - Supertex Part Number 2N7001 2N7002 B S1 7 0 F B S2 5 0 F BSN20 BSS84 B S S11 9 BSS123 B SS131 BSS138 BSS145 BST82 PM B F107 SP 0610T TP0610T VN0603T VN0605T VP0610T Z V N 3306F ZVN 3310F ZVN 3320F Z VN 4106F Z VP3306F Z VP3310F N N N P


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PDF OT-23 2N7001 2N7002 BSN20 BSS84 BSS123 SS131 BSS138 BSS145 BST82 TP0610T VN2110K1 ZVN3320F TN2124K1 vp3306 vp3310
bss170

Abstract: No abstract text available
Text: 0.8/2.4 1.0 10.0 500 10 BST82 80 175 0.6 300 1.5/3.5 1.0 10.0


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PDF ZVN3320F BSS123 BSS123A ZVN3310F BST82 ZVN4106F ZVN3306F FMMJ4391 FMMJ4392 FMMJ4393 bss170
2106a

Abstract: BST72A CROSS ZVN3306A ZVN2106A vn1720m 0545N2 MPF910 vp0109n2 2N7019 zetex zvp2120a
Text: CROSS R EF ER E N C E LIST Industry Part No. 2N 6659 2N 6660 2N6661 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 BS107 BS107A BS108 BS170 BS250 BSR64 BSR65 BSR66 BSR67 BSR70 BSR72 BSR76 BSR78 BSS84 BSS87 BSS88 BSS89 BSS91 BSS92 BSS100 BSS101 BSS110 BSS123 BSS138 BST70A BST72A BST74A BST76A BST80 BST82 BST84 BST86 BST90 BST97 BST100 BST110 BST120 D80AK1 D80AK2 Zetex Suggested Replacem ent ZVN2106B ZVN2106B ZVN2110B 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107P ZVNL120A


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PDF 2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS ZVN3306A ZVN2106A vn1720m 0545N2 MPF910 vp0109n2 2N7019 zetex zvp2120a
BF247A

Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Text: 2 N4857 815 BST82 617 PMBF5486 739 2N4858 815 BST84 621 PMBFJ108


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PDF BS170 BS208 BF904 BF904R BF904WR BS250 BC264D BF908 BSD12 BF245A BF247A bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
smd transistor LY

Abstract: A763 transistor SMD 352 ld smd transistor smd transistor ds
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-fllm circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. BST82 QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp < 2 ms) Gate-source voltage (open drain


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PDF BST82 smd transistor LY A763 transistor SMD 352 ld smd transistor smd transistor ds
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