The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
MIC23099YFT-T5 Microchip Technology Inc IC REG BCK BST ADJ DL SYNC 14QFN
MIC23099YFT-TR Microchip Technology Inc IC REG BCK BST ADJ DL SYNC 14QFN
MAX1771CPA+T Maxim Integrated Products IC REG CTRLR BST/BUCK-BST 8DIP
1287700000 Weidmüller Interface GmbH & Co. KG TERMINAL MARKER TYPE BST MARKER
2190 Adafruit Industries BOARD CONVERTER 5V USB BUCK BST
175160031 ams IC REG BST ADJ 0.85A SYNC TSOT23

Search Stock (1)

  You can filter table by choosing multiple options from dropdownShowing 1 results of 1
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
HM16BST331J KOA Speer Electronics Inc Bristol Electronics - -

No Results Found

BST 33 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BST-33

Abstract:
Text: +Pol 49 specifications for model/type: A ­ Eso5 BST-33 Ansmann drawing number / part number


Original
PDF 600mA 300mA 600mA 600mAh 550mAh 500mAh BST-33 Z800 BST 33 V800
2012 - HQFN040-A3-0606B

Abstract:
Text: FSEL VFB N.C 30 29 28 27 26 25 24 23 22 21 PGOOD 31 AGND 32 BST 33 N.C 34 N.C EN 20 , VREG VREG ON / OFF VREG 25 VREG : 5.5 V UVLO SCP 0.6 V + 15 % OCP TSD 33 BST 35 , PVIN BST 32 19 AGND 33 AGND LX C-SS MODE PGND AVIN C-AVIN1 C-AVIN2 , / Vo= 1.2V SKIP/ Vo= 1.8V SKIP/ Vo= 3.3V SKIP/ Vo= 5.0V VOUT BST AVIN AVIN 0.1F 22F NN30312A , 0.3 to (VREG + 0.3) V V Rating 33 ­ 40 to + 85 ­ 40 to + 150 ­ 55 to + 150 ­ 0.3 to (VREG + 0.3) Unit


Original
PDF NN30312A HQFN040-A3-0606B nn30312
2012 - GRM31CR71E226KE15L

Abstract:
Text: 32 BST 33 N.C 34 SS N.C 20 CTL1 41 AGND 19 AGND 18 MODE 17 16 15 42 PVIN 43 LX 14 13 12 11 1 , BST AVIN 100k 80 70 Efficiency (%) 60 50 40 30 20 10 0 0.001 0.010 0.100 1.000 10.000 FCCM/ Vo , 5 V, Vout = 1.0 V , 1.2 V , 1.8 V , 3.3 V Lo = 1 µH, Co = 66 µF ( 22 µF x 3 ), Frequency = 500 kHz , FUNCTIONS( Continued ) Pin No. 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 , Power MOSFET Pin name MODE AGND CTL1 N.C N.C CTL2 VREG VFB VOUT SS AVIN N.C N.C PGOOD AGND BST N.C Type


Original
PDF NN30196A GRM31CR71E226KE15L mosfet z-44 mosfet z-44 DIAGRAM NN30196A transponder operation
2011 - smt capacitor R 10k 227

Abstract:
Text: - 13.2 V BST 3.3 V EFFICIENCY (%) 95 90 85 80 75 70 65 0 0.5 1 1.5 2 OUTPUT CURRENT (A) 2.5 3 5V , NCP3126 PGND FB COMP AGND (Top View) 1 VSW ISET VIN BST See detailed ordering and shipping information , Rev. 2 1 Publication Order Number: NCP3126/D NCP3126 CIRCUIT DESCRIPTION BST + - - + 10 mA , desired input voltage to this pin (cathode connected to BST pin). Connect a capacitor (CBST) between this , 4 5 COMP AGND BST 6 VIN 7 8 ISET VSW http://onsemi.com 2 NCP3126 Table 2


Original
PDF NCP3126 NCP3126/D smt capacitor R 10k 227 marking 1R vishay SMD DIODE 3126 SMD marking DHS 06033D105KAT RF MOSFET Driver
2013 - Not Available

Abstract:
Text: 16 15 PGND 14 13 12 11 41 AGND BST 33 N.C. 34 PVIN 35 36 37 38 39 40 43 , EFFICIENCY CURVE VREG 100 90 1 µH LX VFB VREG 1 µF SS AGND PGND VOUT = 3.3 V 22 µF , / Vo= 5.0V 40 30 20 10 0 10.000 0.1 µF 1.000 NN30312A AVIN 60 0.100 BST , = 12 V, VOUT Setting = 1.05 V, 1.2 V, 1.8 V, 3.3 V, 5.0 V, Switching Frequency = 750 kHz, FCCM / Skip Mode, LO = 1 µH, CO = 66 µF (22 µF  3) Page 1 of 33 Established : 2012-06-29 Revised


Original
PDF TA4-EA-06098 NN30312A
2010 - Marvell PHY 88E1111 layout

Abstract:
Text: - U9.G12 3.3 -V power good monitor CLK100_EN 2.5-V J1 - SW1.3, X2.1 100 MHz


Original
PDF
2001 - EPF10K200S

Abstract:
Text: Action GroupBST JTAG BST 3.3 V FLEX 10KA 5.0 V FLEX®10K FLEX 10K Embedded Programmable Logic , ­ MultiVoltTM I/O 2.5 V3.3 V 5.0 V MultiVoltTM I/O ­ 212 MHz I/O tSU tCO ­ 33 MHz 66 MHz ­ PCI Special Interest Group PCI SIG 3.3 V PCI Local Bus Specification, Revision 2.2 , JTAG BST 8 Altera Corporation FLEX 10KE Embedded Programmable Logic Devices Data Sheet , ENA CLRN : (1) FLEX 10KE EPF10K50E EPF10K200E Altera Corporation 33 FLEX 10KE


Original
PDF EPF10K30E EPF10K50E EPF10K50S EPF10K200S EPF10K50S FLEX 10ke pll EPF10K100E EPF10K130E EPF10K200E EPF10K30E EPF10K50E
SIEMENS BST

Abstract:
Text: SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB 3118160BSJ/ BST (L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 , page mode cycle time 35 40 45 ns • Single + 3.3 V (± 0.3 V) supply • Low power dissipation max. 720 active mW ( HYB 3118160BSJ/ BST -50) max. 648 active mW ( HYB 3118160BSJ/ BST -60) max. 576 active mW ( HYB 3118160BSJ/ BST -70) max. 360 active mW ( HYB 3116160BSJ/ BST -50) max. 324 active


OCR Scan
PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSAS 160BSJ/BST 16-DRAM flS3Sb05 SIEMENS BST SIEMENS BST f 35 80 SIEMENS BST h 35 SIEMENS BST t BST60 SIEMENS BST f 05 90 SIEMENS BST h 05 90 SIEMENS BST H 45 90 SIEMENS BST N 45 b 110
1998 - SPT0305

Abstract:
Text: 3.3 V Versions 0.2 1998-10-01 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M × 16 , 1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 Advanced Information · 1 048 576 words by 16-bit organization · 0 to 70 °C , HYB3118165 -50 -60 5 V ± 10 % 3.3 V ± 0.3 V 10/10 10/10 Refresh Active -60 1024 , refresh · All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL ( 3.3 V version)-compatible


Original
PDF 16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 SPT0305 BST50 SMD MARKING CODE RAC 5118165BSJ 5118165BSJ-60 HYB3118165 HYB5118165
SIEMENS BST

Abstract:
Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM (1 k & 4k-Refresh) HYB 3116165BSJ/ BST (L)-50/-60/-70 HYB 3118165BSJ/ BST (L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 , Hyper page mode (EDO) cycle time 20 25 30 ns • Single + 3.3 V (± 0.3 V) supply • Low power dissipation max. 720 active mW ( HYB 3118165BSJ/ BST -50) max. 648 active mW ( HYB 3118165BSJ/ BST -60) max. 576 active mW ( HYB 3118165BSJ/ BST -70) max. 360 active mW ( HYB 3116165BSJ/ BST


OCR Scan
PDF 16-Bit 3116165BSJ/BST 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 165BSJ/BST SIEMENS BST SIEMENS BST t BST60 BST70 SIEMENS BST h 35 SIEMENS BST L 35 90
Not Available

Abstract:
Text: (57$& RECEPTACLE & PLUG CONNECTOR : interconnect BST M&F 01 ÷ 33 (Continue d , Male Insulator ( Thickness) ref. BST 0,6 mm nominal 2,54 mm 1 1 ÷ 33 ( continuous strip) M1 ( 7,6 mm , . S Ref. C BST * 254 M2 * * Termination Styles Serie Ways (n) 01 ÷ 33 Pitch Male body ref. M2 , CONNECTOR : interconnect BST M3 01 ÷ 33 PIN CONTACT POSITIONS (Continue d) * 254 M3 , : interconnect BST F 01 ÷ 33 SOCKET CONTACT POSITIONS (Continue d) * 254 F


Original
PDF
1998 - BST60

Abstract:
Text: / BST (L)-50/-60/-70 3.3V 1M x 16 EDO-DRAM AC Characteristics 5)6) TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 , HYB3116165BSJ/ BST (L)-50/-60/-70 HYB3118165BSJ/ BST (L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM , RAS access time Hyper page mode (EDO) cycle time 20 25 30 ns Single + 3.3 V (± 0.3 V) supply Low power dissipation max. 720 active mW ( HYB3118165BSJ/ BST -50) max. 648 active mW ( HYB3118165BSJ/ BST -60) max. 576 active mW ( HYB3118165BSJ/ BST -70) max. 360 active mW ( HYB3116165BSJ/ BST


Original
PDF HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 BST60 Q67100-Q1192 WL3 MARKING
1996 - smd code marking wl5

Abstract:
Text: HYB3116165BSJ/ BST (L)-50/-60/-70 HYB3118165BSJ/ BST (L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM , RAS access time Hyper page mode (EDO) cycle time 20 25 30 ns Single + 3.3 V (± 0.3 V) supply Low power dissipation max. 720 active mW ( HYB3118165BSJ/ BST -50) max. 648 active mW ( HYB3118165BSJ/ BST -60) max. 576 active mW ( HYB3118165BSJ/ BST -70) max. 360 active mW ( HYB3116165BSJ/ BST -50) max. 324 active mW ( HYB3116165BSJ/ BST -60) max. 288 active mW ( HYB3116165BSJ/ BST -70) 7.2 mW standby


Original
PDF HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 smd code marking wl5 BST60 Q67100-Q1188
BST50

Abstract:
Text: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 , : HYB5118165 -50 Power Supply HYB3118165 -50 -60 5 V ± 10 % 3.3 V ± 0 .3 V 10/10 10/10 , versions) and LV-TTL ( 3.3 V version)-compatible • Plastic Package: P-SOJ-42-1 400 mil P-TSOP11-50/44-1 400 mil HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS The


OCR Scan
PDF 16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 BST50 SIEMENS BST 68 3118165 SIEMENS BST Q
SIEMENS BST

Abstract:
Text: Characteristics 5)6> r A= 0 to 70 "C, Vcc = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol HYB 3116(8)160BSJ/ BST (L , 0 to 70 'C.Vcc = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol HYB 3116(8)160BSJ/ BST (L)-5Q/-60/-70 , SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB 3118160BSJ/ BST (L)-50/-60/-70 Advanced Information · 1 048 576 words by 16-bit organization · 0 to 70 "C , time Fast page mode cycle time 50 13 25 90 35 Single + 3.3 V (± 0.3 V) supply Low power


OCR Scan
PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSJ/BST-70) 3116160BSJ/BST-50) 3116160BSJ/BST-60) 160BSJ/BST SIEMENS BST SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST L 35 90 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
1996 - Q67100-Q1164

Abstract:
Text: )160BSJ/ BST (L)-50/-60/-70 3.3V 1M x 16-DRAM AC Characteristics 5)6) TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 , HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB 3118160BSJ/ BST (L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k , time Fast page mode cycle time 35 40 45 ns Single + 3.3 V (± 0.3 V) supply Low power dissipation max. 720 active mW ( HYB 3118160BSJ/ BST -50) max. 648 active mW ( HYB 3118160BSJ/ BST -60) max. 576 active mW ( HYB 3118160BSJ/ BST -70) max. 360 active mW ( HYB 3116160BSJ/ BST -50) max. 324 active


Original
PDF 3116160BSJ/BST 3118160BSJ/BST 16-Bit 3118160BSJ/BST-50) 3118160BSJ/BST-60) 160BSJ/BST 16-DRAM GPJ05853 P-SOJ-42 Q67100-Q1164 BST60 SIEMENS BST f 05 90 SIEMENS BST H 05 - 110
2005 - AT17

Abstract:
Text: 3.3.1 Programming the Contents of a *. BST File to AT17 Devices. 3-3 3.3.2 Reading the Contents of the Configurator to a *. BST File. 3-3 3.3.3 Verifying the Device against a *. BST File. 3-3 3.4 Using a Configurator with , .2-3 2.3.1 Programming the Contents of a *. BST File to AT17 Devices.2-3 2.3.2 Reading the Contents of the Configurator to a *. BST File.2-3 2.3.3 Verifying the Device


Original
PDF ATDH2200E 1417E AT17 AT17LV AT17LV512A ATDH2200 ATDH2220
18165BSJ-60

Abstract:
Text: = 0 to 70 "C, Vcc = 3.3 V ± 0.3 V, Parameter HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 , 70 "C, Vcc = 3.3 V ± 0.3 V, Parameter HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM , SIEM EN S 1M X 16-Bit EDO- Dynamic RAM (1 k & 4k-Refresh) HYB 3116165BSJ/ BST (L)-5Q/-60/-70 HYB 3118165BSJ/ BST (L)-50/-60/-70 Advanced Information · 1 048 576 words by 16-bit organization · 0 to 70 *C , mode (EDO) cycle time 50 13 25 84 20 ^A A Jrc Íhpc Single + 3.3 V (± 0.3 V) supply · Low


OCR Scan
PDF 16-Bit 3116165BSJ/BST -5Q/-60/-70 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 3118165BSJ/BST-70) 3116165BSJ/BST-50) 3116165BSJ/BST-60) 18165BSJ-60 BST60 d8430
2002 - TA2160FN

Abstract:
Text: 240 W 33 mF INB 1 mF 30 22 mF VREF VCC 7 24 100 kW 180 kW 0.22 mF BST , PRE OUTA 26 5 25 VREF 6 BST SW RF OUT RF&REF VREF IN PRE OUTA 4 , OFF BST SW LPF PW INA BST BST NF 2 PW INA 8 PWA 23 VREF 9 22 , INC AGC DET BST OUT 12 19 OUTA RL VCC ON 18 OUTC OUTC RL 13 , 6 PRE GND 5 Input of reference circuit 0.73 ¾ ¾ 0 Boost on/off switch BST


Original
PDF TA2160FN TA2160FN 1362-Y 2sc1815 equivalent 1MF10 2SA1362 2SC1815
2002 - lc7805

Abstract:
Text: 3.3.1 Programming the Contents of a *. BST File to AT17 Devices. 3-3 3.3.2 Reading the Contents of the Configurator to a *. BST File. 3-3 3.3.3 Verifying the Device against a *. BST File. 3-3 3.4 Using a Configurator with , .2-3 2.3.1 Programming the Contents of a *. BST File to AT17 Devices .2-3 2.3.2 Reading the Contents of the Configurator to a *. BST File.2-3 2.3.3 Verifying the Device


Original
PDF ATDH2200E ATDH2200E 1417C lc7805 LC7805C atmel programming in c AT17 AT17LV AT17LV512A Application Programming Guide ATDH2220 ATMEL EEPROM 256
2002 - transistor 2SA 6 J

Abstract:
Text: VREF 1.5 V set: OPEN 3 V set: ON 26 BASE 25 LPF 24 BST NF 23 BST OUT 22 PW INC 21 AGC IN 20 RL OUTA OUTC 19 18 OUTB 17 VCC 16 RF&REF BST AGC DET PREB PREA PW C PWA PWB BST SW MUTE SW 1 2 PRE OUTB 3 PRE NFB 4 PRE NFA 5 PRE OUTA 6 VREF 7 8 BST SW PRE GND 9 PW INA 10 PW NFA 11 PW , circuit 0.73 0 Boost on/off switch BST on: H level or open BST off: L level Refer to


Original
PDF TA2160FN TA2160FN transistor 2SA 6 J 2SA1362 2SC1815 2sc1815 equivalent KC223 NFA 220
2004 - transistor bass treble control circuit

Abstract:
Text: OUTB VCC VREF 1.5 V set: OPEN 3 V set: ON RF OUT 26 BASE 25 LPF 24 BST NF 23 BST OUT 22 PW INC 21 AGC IN 20 RL OUTA OUTC 19 18 OUTB 17 VCC 16 RF&REF BST AGC DET PREB PREA PWA PWC PWB BST SW MUTE SW 1 2 PRE OUTB 3 PRE NFB 4 PRE NFA 5 PRE OUTA 6 VREF 7 PRE GND 8 BST SW 9 PW INA 10 PW , reference circuit 0.73 0 Boost on/off switch BST on: H level or open BST off: L level


Original
PDF TA2160FNG TA2160FNG transistor bass treble control circuit 2SA1362 2SC1815 transistor audio amplifier circuit diagram
2009 - AN39

Abstract:
Text: -2.0 Introduction This chapter provides guidelines on using the IEEE Std. 1149.1 boundary-scan test ( BST ) circuitry in Cyclone® III family devices (Cyclone III and Cyclone III LS devices). BST architecture tests , the following sections: "IEEE Std. 1149.1 BST Architecture" on page 12­1 "IEEE Std. 1149.1 BST Operation Control" on page 12­2 "I/O Voltage Support in a JTAG Chain" on page 12­5 "Guidelines for IEEE Std. 1149.1 BST " on page 12­6 "Boundary-Scan Description Language Support" on page


Original
PDF CIII51012-2 AN39 EP3CLS200 EP3CLS100 EP3c55 EP3C40 EP3C25 pin guideline EP3C25 EP3C16 EP3C120 EP3C10
Not Available

Abstract:
Text: 15. IEEE 1149.1 (JTAG) Boundary-Scan Testing for Stratix II & Stratix II GX Devices SII52009- 3.3 , Test ( BST ) architecture offers the capability to test efficiently components on PCBs with tight lead spacing. This BST architecture tests pin connections without using physical test probes and captures , 15­1 illustrates the concept of BST . Figure 15­1. IEEE Std. 1149.1 Boundary-Scan Testing , . 1149.1 BST Architecture This chapter discusses how to use the IEEE Std. 1149.1 BST circuitry in


Original
PDF SII52009-3 1980s,
2010 - ADP2300

Abstract:
Text: 1.2A 20V 700kHz/1.4MHz ADP2300/ADP2301 ADP2300/ADP2301 1.2 A BST 3.0V TO 20V VIN , 1.2A 20V 700kHz/1.4MHz ADP2300/ADP2301 ADP2300/ADP2301 1.2 A BST 3.0V TO 20V VIN , Rev. A | Page 3 of 28 °C °C ADP2300/ADP2301 2 VIN, EN SW BST to SW BST FB -0.3 V +28 V -1.0 V +28 V -0.6 V +6 V -0.3 V +28 V -0.3 V + 3.3 V -40°C +125°C -65°C +150°C JEDEC J-STD , 5 VIN 4 ADP2300/ ADP2301 EN TOP VIEW (Not to Scale) 08342-002 BST 3. 4


Original
PDF 700kHz/1 ADP2300/ADP2301 ADP2300/ ADP2301 ADP2300) ADP2301) 700kHz ADP2300 D083 ADP2301AUJZ-R7 ADP2301 ADP2301-1 ADP2301AUJZ B230A CDRH5D28RHPNP-100M VLC5045T-100M LPS6225-103MLC
Supplyframe Tracking Pixel