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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BSS63 Nexperia Farnell element14 458 £0.26 £0.08
BSS63 Nexperia Newark element14 358 $0.31 $0.06
BSS63 Fairchild Semiconductor Corporation Rochester Electronics 113,100 $0.05 $0.04
BSS63 Nexperia element14 Asia-Pacific 358 $0.37 $0.06
BSS63 ON Semiconductor element14 Asia-Pacific - $0.33 $0.03
BSS63 ON Semiconductor Farnell element14 - £0.03 £0.03
BSS63 Fairchild Semiconductor Corporation Bristol Electronics 2,239 - -
BSS63 Philips Semiconductors Bristol Electronics 5,039 - -
BSS63 Fairchild Semiconductor Corporation ComS.I.T. 1,433 - -
BSS63,215 Nexperia Newark element14 7,513 $0.04 $0.04
BSS63,215 Nexperia Future Electronics - $0.07 $0.07
BSS63,215 Nexperia Avnet - $0.03 $0.03
BSS63,215 Nexperia Chip1Stop 14,900 $0.13 $0.04
BSS63,215 Nexperia Chip1Stop 15,000 $0.06 $0.04
BSS63,215 Nexperia Avnet - $0.03 $0.02
BSS63,215 Nexperia Chip1Stop 15,000 $0.03 $0.03
BSS63/AT Philips Semiconductors Bristol Electronics 929 - -
BSS63215 NXP Semiconductors Rochester Electronics 162,000 $0.05 $0.04
BSS63AT Philips Semiconductors Bristol Electronics 2,950 - -
BSS63E6327 Siemens ComS.I.T. 2,695 - -
BSS63E6433 Siemens ComS.I.T. 34,650 - -
BSS63LT1 ON Semiconductor Rochester Electronics 30,000 $0.04 $0.03
BSS63LT1G ON Semiconductor Avnet 12,000 $0.04 $0.03
BSS63LT1G ON Semiconductor Allied Electronics & Automation - $0.07 $0.06
BSS63LT1G ON Semiconductor Avnet - $0.21 $0.04
BSS63LT1G ON Semiconductor Future Electronics 24,000 $0.02 $0.02
BSS63LT1G ON Semiconductor TME Electronic Components 2,735 $0.04 $0.02
BSS63LT1G ON Semiconductor Future Electronics - $0.07 $0.03
BSS63LT1G ON Semiconductor Avnet - $0.04 $0.03
BSS63LT1G ON SEMICONDUCTOR New Advantage Corporation 60,000 $0.05 $0.05
BSS63LT1G ON Semiconductor ComS.I.T. 3,000 - -
BSS63LT1G ON Semiconductor Schukat electronic 1,600 €0.06 €0.02
BSS63LT1G ON Semiconductor Farnell element14 11,254 £0.14 £0.03
BSS63LT1G ON Semiconductor Wuhan P&S 13 $0.05 $0.03
BSS63LT1G ON Semiconductor Rochester Electronics 469,605 $0.04 $0.03
BSS63LT1G ON Semiconductor Chip1Stop 8,209 $0.07 $0.07
BSS63LT1G ON Semiconductor Chip1Stop 280 $0.05 $0.02
BSS63LT1G ON Semiconductor Avnet - $0.03 $0.02
BSS63LT1G ON Semiconductor Newark element14 3,000 $0.01 $0.01
BSS63LT1G ON Semiconductor element14 Asia-Pacific 11,074 $0.26 $0.03
BSS63LT1G ON Semiconductor element14 Asia-Pacific 11,074 $0.26 $0.03
BSS63LT1G ON Semiconductor element14 Asia-Pacific - $0.05 $0.02
BSS63LT1G ON Semiconductor Newark element14 11,493 $0.02 $0.02
BSS63TR Philips Semiconductors Bristol Electronics 2,558 - -
NSVBSS63LT1G ON Semiconductor Rochester Electronics 39,000 $0.09 $0.07
NSVBSS63LT1G ON Semiconductor Avnet - $0.05 $0.05
PHSBSS63215 NXP Semiconductors Rochester Electronics 1,500 - -

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BSS63 datasheet (53)

Part Manufacturer Description Type PDF
BSS63 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BSS63 Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP GP 100V 200MA SOT23 Original PDF
BSS63 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
BSS63 Infineon Technologies PNP Silicon AF and Swiching Transistor Original PDF
BSS63 Kexin PNP General Purpose Amplifier Original PDF
BSS63 Korea Electronics Low Noise Transistor Original PDF
BSS63 NXP Semiconductors BSS63 - PNP high-voltage transistor - Complement: BSS64 ; fT min: 85 MHz; hFE max:>30 ; hFE min: 30 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 100 V Original PDF
BSS63 Philips Semiconductors High Voltage PNP Transistor Original PDF
BSS63 Philips Semiconductors PNP high-voltage transistor Original PDF
BSS63 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BSS63 Siemens PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) Original PDF
BSS63 STMicroelectronics SMALL SIGNAL PNP TRANSISTOR Original PDF
BSS63 TY Semiconductor PNP General Purpose Amplifier - SOT-23 Original PDF
BSS63 Zetex Semiconductors SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR Original PDF
BSS63 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BSS63 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BSS63 Korea Electronics Low Noise Transistor Scan PDF
BSS63 Motorola European Master Selection Guide 1986 Scan PDF
BSS63 Motorola PNP silicon high voltage transistor. Scan PDF
BSS63 Mullard Quick Reference Guide 1977/78 Scan PDF

BSS63 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - bcx42

Abstract: BSS63 BCX41 BSS64
Text: BCX42, BSS63 PNP Silicon AF an Swiching Transistors 3 For general AF applications , =C SOT23 BSS63 BMs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BSS63 BCX42 VCEO 100 125 Collector-base , Resistance 1 Jul-10-2001 BCX42, BSS63 Electrical Characteristics at TA = 25°C, unless otherwise , breakdown voltage IC = 10 mA, IB = 0 V V(BR)CEO BSS63 100 - - BCX42 125 - -


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PDF BCX42, BSS63 BCX41, BSS64 BCX42 VPS05161 EHP00432 bcx42 BSS63 BCX41 BSS64
1995 - BSS63

Abstract: BSS64 marking T3
Text: BSS63 SMALL SIGNAL PNP TRANSISTOR Type BSS63 s s s s Marking T3 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS , C 150 o C 1/4 BSS63 THERMAL DATA R t hj-amb · R th j-SR · Thermal Resistance , µs, duty cycle 2 % 2/4 V CB = -10 V f = 1MHz 30 30 50 MHz 3 pF BSS63 SOT , BSS63 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON


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PDF BSS63 BSS64 OT-23 BSS63 BSS64 marking T3
BSS63

Abstract: No abstract text available
Text: BSS63 Electrical characteristics at 7X = 25 °C, unless otherwise specified - V V - - , = 10 nA max /(BR) C EO Collector-base breakdown voltage1 ) BCX42 / c — 100 |iA BSS63 , BCX42 / c = 10 mA BSS63 /CBO Collector cutoff current l^CE“ 100 V, l^BE = 0,2V rA - 85 °C 7a = 125°C BSS63 BC X42 BSS63 BCX42 ICEO BCX42 BCX42 Emitter cutoff current I^eb = 4 , /CE = /c = 200 mA, V ce = / ebo /ÍFE 1V 5V 5V 1V 1V BCX42 BSS63 BSS63 BCX42 BCX42


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PDF 23b320 lb704 Q62702-C945 Q62702-S401 Q62702-C1485 Q62702-S534 BSS63 BSS63
1997 - Not Available

Abstract: No abstract text available
Text: BSS63 PNP General-Purpose Amplifier Description C This device is designed for , -23 Mark: T3 B Ordering Information Part Number Marking Package Packing Method BSS63 , . © 1997 Fairchild Semiconductor Corporation BSS63 Rev. 1.1.0 www.fairchildsemi.com 1 BSS63 â , Semiconductor Corporation BSS63 Rev. 1.1.0 50 MHz www.fairchildsemi.com 2 BSS63 — PNP , Corporation BSS63 Rev. 1.1.0 1 www.fairchildsemi.com 3 BSS63 — PNP General-Purpose Amplifier


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PDF BSS63 OT-23 OT-23
1997 - str 6707

Abstract: str 6707 datasheet datasheet str 6707 Q 817 rd sot23 4894 PO 903 marking code 43 sot23 Philips BSS63 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS63 PNP high-voltage , BSS63 FEATURES PINNING · Low current (max. 100 mA) PIN · High voltage (max. 100 V). 1 , CODE BSS63 2 Top view MAM256 BMp Fig.1 Simplified outline (SOT23) and symbol. QUICK , 2 MHz Philips Semiconductors Product specification PNP high-voltage transistor BSS63 , high-voltage transistor BSS63 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D


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PDF M3D088 BSS63 BSS64. SCA54 117047/00/02/pp8 str 6707 str 6707 datasheet datasheet str 6707 Q 817 rd sot23 4894 PO 903 marking code 43 sot23 Philips BSS63 BP317
2009 - BSS63

Abstract: bss63 bm BSS64 high gain PNP POWER TRANSISTOR "SOT23"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS63 PNP high-voltage transistor Product data sheet , high-voltage transistor BSS63 FEATURES PINNING · Low current (max. 100 mA) PIN · High voltage , CODE(1) TYPE NUMBER BSS63 1 BM Top view 2 MAM256 Note 1. = p : Made in Hong Kong , . ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BSS63 2004 Jan 16 - DESCRIPTION plastic surface , high-voltage transistor BSS63 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC


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PDF BSS63 BSS64. MAM256 R75/04/pp6 BSS63 bss63 bm BSS64 high gain PNP POWER TRANSISTOR "SOT23"
transistor 1547 b

Abstract: transistor 1548 b transistor 1548 210EC BSS63 TRANSISTOR b72 L7E transistor
Text: ■bbSBTBl G025L03 b?E MARX N AUER PHILIPS/DISCRETE b?E D BSS63 HIGH VOLTAGE P-N-P , . 30 50 MHz 85 MHz MECHANICAL DATA Fig. 1 SOT-23. Dimensions in mm Marking code BSS63 = BMp 1.1 , SDÌ MARX BSS63 N Af1ER PHILIPS/DISCRETE b?E D _J V_ RATINGS Limiting values in accordance with the , transistor N APIER PHILIPS/DISCRETE b7E ]> BSS63 100 hFE 75 50 25 100 fT (MHz) 75 50 25 , Manufacturer BSS63 I t.b53^31 DDE5bDb 3fll HAPX N AMER PHILIPS/DISCRETE b7E D V_ 15 (pF) 10 7Z59855.1


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PDF G025L03 BSS63 7Z59855 transistor 1547 b transistor 1548 b transistor 1548 210EC BSS63 TRANSISTOR b72 L7E transistor
2004 - BCX42

Abstract: bss63 bcx42 "sot23"
Text: BCX42, BSS63 PNP Silicon AF an Swiching Transistors For general AF applications High breakdown , VPS05161 Type BCX42 BSS63 Maximum Ratings Parameter Marking DKs BMs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BSS63 100 110 5 BCX42 125 125 5 , R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCX42, BSS63 , 20 mA, VCE = 5 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX42 BSS63 BSS63 BCX42 BCX42 BCX42


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PDF BCX42, BSS63 BCX41, BSS64 VPS05161 BCX42 BSS63 bcx42 "sot23"
1999 - 301 marking code PNP transistor

Abstract: 359 marking sot23 marking code 10 sot23 Philips MARKING CODE BP317 BSS63 BSS64
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS63 PNP high-voltage , Product specification PNP high-voltage transistor BSS63 FEATURES PINNING · Low current (max , : BSS64. 1 MARKING 2 TYPE NUMBER MARKING BSS63 1 CODE(1) 2 Top view BM , BSS63 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from , specification PNP high-voltage transistor BSS63 PACKAGE OUTLINE Plastic surface mounted package; 3


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PDF M3D088 BSS63 BSS64. MAM256 SCA63 115002/00/03/pp8 301 marking code PNP transistor 359 marking sot23 marking code 10 sot23 Philips MARKING CODE BP317 BSS63 BSS64
1997 - Not Available

Abstract: No abstract text available
Text: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from , X 40 mm X 1.5 mm. ©1997 Fairchild Semiconductor Corporation Max Units * BSS63 350 2.8 , - 40 ° C 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 BSS63 PNP General Purpose Amplifier (continued) BSS63 PNP General Purpose Amplifier Base-Emitter Saturation Voltage vs


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PDF BSS63 OT-23
2004 - BSS63

Abstract: BSS64
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS63 PNP high-voltage transistor Product specification , high-voltage transistor BSS63 FEATURES PINNING · Low current (max. 100 mA) PIN · High voltage , ) TYPE NUMBER BSS63 1 BM Top view 2 MAM256 Note 1. = p : Made in Hong Kong. = t , INFORMATION PACKAGE TYPE NUMBER NAME BSS63 2004 Jan 16 - DESCRIPTION plastic surface mounted , high-voltage transistor BSS63 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC


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PDF BSS63 BSS64. MAM256 SCA76 R75/04/pp6 BSS63 BSS64
2002 - Not Available

Abstract: No abstract text available
Text: BSS63 BSS63 C E SOT-23 Mark: T3 B PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from , Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max * BSS63 350 , Fairchild Semiconductor Corporation 3-269 BSS63 PNP General Purpose Amplifier (continued , COLLECTOR CURRENT (A) 1 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 3-270 BSS63 PNP


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PDF BSS63 OT-23
transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 m6 marking transistor sot-23 D6 TRANSISTOR MARKING sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor cg sot-23 transistor sot-23 Marking AR transistor G1 SOT-23
Text: identified by an alpha-numerical code stamped on the body of the device as follows: BSS63.T3 BSS63R.T6 BSS63 , Page 3 SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS , 4 FERRANTI semiconductors ® PNP Silicon Planar High Voltage Transistor BSS63 DESCRIPTION , a ceramic substrate measuring 10x8x 0.6mm BSS63 CHARACTERISTICS (at 25°C ambient temperature , Transition frequency «T 50 85 - MHz Vce = 5V, lc = 25mA f = 35MHz BSS63 , Page 2 BSS63 AMBIENT TEMPERATURE


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PDF BSS63 BSS64. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B transistor marking code 7E SOT-23 transistor dg sot-23 marking 1p transistor sot23 m6 marking transistor sot-23 D6 TRANSISTOR MARKING sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor cg sot-23 transistor sot-23 Marking AR transistor G1 SOT-23
Not Available

Abstract: No abstract text available
Text: r Z 7 SGS-THOMSON ^ 7# R L,[iera©M©l BSS63 SMALL SIGNAL PNP TRANSISTOR Type Marking BSS63 T3 a SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS • GENERAL PURPOSE LOW FREQUENCY APPLICATONS . NPN COMPLEMENT IS , March 1996 1/4 7 ^ 237 □□7fl0bfl S5fl BSS63 THERMAL DATA Rthj-amb • Rthj-SR â , BSS63 SOT-23 MECHANICAL DATA mm DIM. MIN. mils MAX. TYP. MIN. TYP. MAX. A


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PDF BSS63 BSS64 OT-23 SC08S10 007fl0L OT-23
BSS63

Abstract: bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63
Text: Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • High voltage (max. 100 V). 1 base 2 emitter , ) BSS63 BM* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Top view Fig. 1 Simplified , Product specification PNP high-voltage transistor BSS63 THERMAL CHARACTERISTICS SYMBOL PARAMETER , Philips Semiconductors Product specification PNP high-voltage transistor BSS63 PACKAGE OUTLINE Plastic


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PDF BSS63 BSS64. bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63
1997 - mark 641

Abstract: BSS63
Text: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from , 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units * BSS63 350 2.8 357 mW mW , 1 10 I C - COLLECTOR CURRENT (mA) 100 BSS63 PNP General Purpose Amplifier (continued) BSS63 PNP General Purpose Amplifier Base-Emitter Saturation Voltage vs Collector Current V BE


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PDF BSS63 OT-23 mark 641 BSS63
2009 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BSS63 PNP high-voltage transistor Product data sheet , transistor BSS63 PINNING FEATURES • Low current (max. 100 mA) PIN • High voltage (max. 100 , ) TYPE NUMBER BSS63 1 BM∗ Top view 2 MAM256 Note 1. ∗ = p : Made in Hong Kong. â , . ORDERING INFORMATION TYPE NUMBER BSS63 2004 Jan 16 PACKAGE NAME − DESCRIPTION plastic , high-voltage transistor BSS63 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC


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PDF BSS63 BSS64. MAM256 R75/04/pp6
transistor 1548 b

Abstract: No abstract text available
Text: ■bbSaiBl DDE5b03 b?E H A P X N AUER PHILIPS/DISCRETE BSS63 b?E D HIGH VOLTAGE , 50 MHz 85 MHz typ. Marking code BSS63 = BMp Pinning: 1 = base 2 = em itter 3 = , request. See also Soldering recommendations. ■BSS63 bbSB'm Q02Sb04 SOI I APX N AMER , substrate o f 8 mm x 10 mm x 0,7 mm. April 1991 30 30 ■bbSBTBl DDESbDS HM5 H A P X BSS63 , – BSS63 tib53T31 DDSSbDb 381 H A P X In AMER PH IL IPS /DISCRETE 7Z59855.1 Fig. 4 Typical values


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PDF DDE5b03 BSS63 tib53T31 7Z59855 0025b07 transistor 1548 b
Not Available

Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS63 * COMPLEMENTARY TYPE - BSS64 PARTMARKING DETAILS - BSS63 = T3 BSS63R = T6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO -1 1 0 V V CEO -1 0 0 V V EBO PARAMETER -6 V -1 0 0 mA 330 w °c SYM BO L C ollector-B ase V oltage C o lle c to r-E m itte r V oltag e Em itter-Base V oltag e C ontin uou s C ollecto r C urrent ■c P ow er D issipation a t T amb = 2 5 ° C P TOT O


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PDF BSS63 BSS64 BSS63R 300/is.
marking 721 sot23

Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 100 mA) · High voltage (max. 100 V). BSS63 PINNING PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS · High-voltage general purpose · Switching applications. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: BSS64. MARKING TYPE NUMBER BSS63 2 , BSS63 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL


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PDF BSS63 BSS64. marking 721 sot23
t6 marking sot23

Abstract: BSS63 t6 sot23 marking T6
Text: SEMICONDUCTOR BSS63 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 T6 1 2 Item Marking Description Device Mark T6 BSS63 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B


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PDF BSS63 OT-23 t6 marking sot23 BSS63 t6 sot23 marking T6
NPN marking 8e

Abstract: BFQ31 BCW33 BCW32 BCW31 BCW30 BCW29 BCV72 BCV71 H9 sot 23
Text: D1 D4 BCW32 D2 D5 BSS63 T3 T6 BCW33 D3 D6 BSS64 U3 U6 BCW60A AA - BSS65 L1 L5 BCW60B AB - , BSS64 120 80 100 300 20/- 4/1 0.7 4/0.4 50 90 BSS63 HT2 90 80 100 300 50/- 10/1 0.75 50/5 0.1 80 HT3 , 300 40/- 10/10 0.4 20/2.0 0.25 160 FMMTA43 BSS63 110 100 100 300 30/- 10/5 0.25 25/2.5 10 100 BSS64


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PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 NPN marking 8e BCW33 H9 sot 23
Not Available

Abstract: No abstract text available
Text: BSS63 _J V HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrominiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended fo r high voltage general purpose and switching applications. QUICK , . 50 MHz 85 MHz M ECH ANICAL D A T A Dimensions in mm Fig. 1 SOT-23. Marking code BSS63 = , Reverse pinning types are available on request. September 1994 713 BSS63 RATINGS Lim iting


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PDF BSS63 frequen65
Not Available

Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSU E 2 - SEPTEM BER 95 Q_ ' BSS63 COM PLIM ENTARY T Y P E - PARTMARKING D E T A IL- BSS64 BSS63 - T3 BSS63R - T6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amtj=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown


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PDF BSS63 BSS64 BSS63 BSS63R -25mA, -10mA, 300us.
2006 - Not Available

Abstract: No abstract text available
Text: Discontinued Closest Alternative Part is MMBT5401 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 SEPTEMBER 95 7 BSS63 C B E COMPLIMENTARY TYPE PARTMARKING DETAIL BSS64 BSS63 - T3 BSS63R - T6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage


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PDF MMBT5401 BSS63 BSS64 BSS63 BSS63R 150oC -25mA, -10mA,
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