The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
BSS123W-7-F Diodes Incorporated Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123NH6327XTSA1 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123-7-F Diodes Incorporated Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123TA Diodes Incorporated Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
BSS123WQ-7-F Diodes Incorporated Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BSS123NH6433XTMA1 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Search Stock (110)

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BSS123 Philips Semiconductors Bristol Electronics 9,125 - -
BSS123 ON Semiconductor Chip1Stop 2 $0.70 $0.70
BSS123 ON Semiconductor Avnet - $0.05 $0.04
BSS123 ON Semiconductor Avnet - - -
BSS123 ON Semiconductor Avnet - $0.05 $0.04
BSS123 ON Semiconductor Avnet - $0.04 $0.04
BSS123 ON Semiconductor Newark element14 9,000 $0.31 $0.06
BSS123 ON Semiconductor Newark element14 15,000 $0.05 $0.05
BSS123 Fairchild Semiconductor Corporation New Advantage Corporation 1,278,000 $0.21 $0.19
BSS123 ON Semiconductor element14 Asia-Pacific 168,000 $0.07 $0.07
BSS123 NXP Semiconductors ComS.I.T. 5,940 - -
BSS123 ON Semiconductor element14 Asia-Pacific 14,905 $0.34 $0.04
BSS123 ON Semiconductor Future Electronics 210,000 $0.10 $0.10
BSS123 ON Semiconductor Future Electronics - $0.21 $0.12
BSS123 ON Semiconductor TME Electronic Components 95,794 $0.06 $0.03
BSS123 ON Semiconductor Farnell element14 168,000 £0.04 £0.04
BSS123 Fairchild Semiconductor Corporation Bristol Electronics 55 $0.11 $0.11
BSS123 ON Semiconductor element14 Asia-Pacific 14,905 $0.34 $0.04
BSS123 Fairchild Semiconductor Corporation Bristol Electronics 2,838 - -
BSS123 Philips Semiconductors Bristol Electronics 5,674 - -
BSS123 Fairchild Semiconductor Corporation Bristol Electronics 8,767 - -
BSS123 Fairchild Semiconductor Corporation Bristol Electronics 5,784 - -
BSS123-7-F Diodes Incorporated Farnell element14 - £0.18 £0.03
BSS123-7-F Diodes Incorporated Allied Electronics & Automation - $0.26 $0.24
BSS123,215 Nexperia New Advantage Corporation 15,000 $0.14 $0.13
BSS123,215 NXP Semiconductors Wuhan P&S 1,100 $0.22 $0.06
BSS123,215 Nexperia Farnell element14 1,358 £0.21 £0.07
BSS123,215 Nexperia Avnet 62 $0.33 $0.33
BSS123.215 Nexperia TME Electronic Components 20,253 $0.07 $0.03
BSS1237F Diodes Incorporated ComS.I.T. 3,000 - -
BSS123E6327 Siemens ComS.I.T. 3,000 - -
BSS123L ON Semiconductor TME Electronic Components 6,314 $0.05 $0.03
BSS123L ON Semiconductor Chip1Stop 30,000 $0.03 $0.03
BSS123L ON Semiconductor Farnell element14 - £0.12 £0.03
BSS123LT1 Motorola Semiconductor Products ComS.I.T. 1,170 - -
BSS123LT1G ON Semiconductor Avnet 75,000 $0.05 $0.04
BSS123LT1G ON Semiconductor Newark element14 28,846 $0.27 $0.05
BSS123LT1G ON Semiconductor Newark element14 36,000 $0.04 $0.04
BSS123LT1G ON Semiconductor Farnell element14 36,000 £0.03 £0.03
BSS123LT1G ON Semiconductor Allied Electronics & Automation 8,441 $0.05 $0.04
BSS123LT1G ON Semiconductor element14 Asia-Pacific 34,689 $0.20 $0.04
BSS123LT1G ON Semiconductor ComS.I.T. 3,000 - -
BSS123LT1G ON Semiconductor element14 Asia-Pacific 34,689 $0.20 $0.04
BSS123LT1G ON Semiconductor Rochester Electronics 106,067 $0.05 $0.04
BSS123LT1G ON SEMICONDUCTOR New Advantage Corporation 777,000 $0.11 $0.10
BSS123LT1G ON Semiconductor Chip1Stop 3,000 $0.03 $0.03
BSS123LT3 Motorola Semiconductor Products Bristol Electronics 25,000 - -
BSS123NH6327 Infineon Technologies AG ComS.I.T. 669 - -
BSS123NH6327 Infineon Technologies AG Wuhan P&S 3 $0.06 $0.04
BSS123NH6327XTSA1 Infineon Technologies AG TME Electronic Components 365 $0.09 $0.04
BSS123NH6327XTSA1 Infineon Technologies AG Farnell element14 8,764 £0.19 £0.06
BSS123NH6327XTSA1 Infineon Technologies AG Newark element14 8,764 $0.38 $0.08
BSS123NH6327XTSA1 Infineon Technologies AG New Advantage Corporation 30,000 $0.15 $0.13
BSS123NH6433 Infineon Technologies AG Wuhan P&S 8,000 $0.08 $0.06
BSS123NH6433XTMA1 Infineon Technologies AG Newark element14 9,170 $0.32 $0.07
BSS123Q-13 Diodes Incorporated Future Electronics - $0.05 $0.05
BSS123TA Diodes Incorporated Future Electronics - $0.04 $0.04
BSS123TA Diodes Incorporated Future Electronics - $0.15 $0.05
BSS123TA Diodes Incorporated Allied Electronics & Automation - $0.05 $0.04
BSS123TA Diodes Incorporated element14 Asia-Pacific - $0.55 $0.08
BSS123TA Diodes Incorporated element14 Asia-Pacific - $0.55 $0.08
BSS123TA Diodes Incorporated Farnell element14 - £0.25 £0.07
BSS123TA Zetex / Diodes Inc ComS.I.T. 9,000 - -
BSS123W ON Semiconductor Chip1Stop 268 $0.07 $0.07
BSS123W ON Semiconductor Chip1Stop 268 $0.30 $0.17
BSS123W-7-F Diodes Incorporated Chip1Stop 480 $0.14 $0.07
BSS123W-7-F Diodes Incorporated New Advantage Corporation 129,000 $0.09 $0.08
BSS123W-7-F Diodes Incorporated Future Electronics - $0.11 $0.06
BSS123W-7-F Diodes Incorporated Avnet 3,000 $0.07 $0.06
BSS123W-7-F Diodes Incorporated Allied Electronics & Automation - $0.12 $0.09
BSS123W-7-F Diodes Incorporated Future Electronics - $0.06 $0.05
BSS123W-7-F Diodes Incorporated Chip1Stop 480 $0.06 $0.06
BSS123W-7-F Diodes Incorporated TME Electronic Components 5,810 $0.13 $0.05

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BSS123 datasheet (83)

Part Manufacturer Description Type PDF
BSS123 Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
BSS123 Diodes N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
BSS123 Fairchild Semiconductor TRANS MOSFET N-CH 100V 0.17A 3SOT-23 T/R Original PDF
BSS123 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
BSS123 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
BSS123 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
BSS123 Infineon Technologies SIPMOS Small-Signal Transistor Original PDF
BSS123 Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; V<sub>DS</sub> (max): 100.0 V; R<sub>DS (on)</sub> (max) (@10V): 6,000.0 mOhm; R<sub>DS (on)</sub> (max) (@4.5V): 10,000.0 mOhm; R<sub>DS (on)</sub> (max) (@2.5V): -; Original PDF
BSS123 Philips Semiconductors N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
BSS123 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
BSS123 Siemens SIPMOS Small-Signal Transistor Original PDF
BSS123 Siemens SIPMOS Small-Signal Transistor Original PDF
BSS123 Siemens Original PDF
BSS123 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
BSS123 Toshiba Power MOSFETs Cross Reference Guide Original PDF
BSS123 Weitron Power MOSFET N-Channel Original PDF
BSS123 Zetex Semiconductors SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
BSS123 Calogic N-Channel Enhancement Mode Vertical DMOS FET Scan PDF
BSS123 Motorola Switchmode Datasheet Scan PDF
BSS123 Others Semiconductor Master Cross Reference Guide Scan PDF

BSS123 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BSS123

Abstract: No abstract text available
Text: F A IR C H IL D SEM IC ONDUCTO R tm September 1996 BSS100 / BSS123 N-Channel Logic Level , . Features BSS100: 0.22A, 100V. RD S (0N ) = 6£2 @ VGS= 10V. BSS123 : 0.17A, 100V. Rds(on) = 6£2 @ VGS= 10V , Continuous - Non Repetitive (Tp < 50 |aS) BSS100 100 100 ±14 ±20 0.22 0.9 0.63 -55 to 150 300 BSS123 , 20 V, VG S= 0 V Tj=125°C All BSS100 BSS123 100 15 1 60 10 10 10 50 V mA mA mA All BSS100 BSS123 BSS100 BSS123 nA nA nA nA IgS S F Gate - Body Leakage, Forward VG S= 20 V, VD S


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PDF BSS100 BSS123 BSS100: BSS123:
1999 - BSS123

Abstract: SAs SOT23 transistor bss123 BSS123(A) equivalent MARKING QG 6 PIN L6327 PG-SOT23
Text: BSS123 Rev. 1.4 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Pb-free Tape and Reel Information Marking BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel SAs Maximum Ratings, at Tj = 25 , IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2006-12-01 BSS123 Rev. 1.4 , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-12-01 BSS123


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PDF BSS123 PG-SOT23 VPS05161 L6327: L6433: BSS123 SAs SOT23 transistor bss123 BSS123(A) equivalent MARKING QG 6 PIN L6327 PG-SOT23
BSS123

Abstract: BSS100 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor
Text: PAIRCHILD MICDNDUCTDR i September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement , . Features ■BSS100: 0.22A, 100V. RDS(0N) = 6i2 @ VGS= 10V. BSS123 : 0.17A, 100V. Rds(on) = 6i2 @ VGS= 10V , . ■Rugged and reliable. V» TO-92 (97) BSS100 G o SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSS100 BSS123 Units v„ Drain-Source Voltage 100 , BSS100 Rev. F / BSS123 Rev. F This Material Copyrighted By Its Respective Manufacturer Electrical


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PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor
1997 - BSS100

Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor , , 100V. RDS(ON) = 6 @ VGS = 10V. BSS123 : 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design , . D G BSS100 BSS123 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F1 / BSS123 Rev


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PDF BSS100 BSS123 BSS100: BSS123: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
BSS123

Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
Text: tu National Semiconductor" July 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode , . Features ■BSS100: 0.22A, 100V. RDS(ON) = 6Q @ VGS = 10V. BSS123 : 0.17 A, 100V. RDS(ON) = 6ii @ VGS = , switch. ■Rugged and reliable. TO-97 BSS100 SOT-23 BSS123 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter BSSIOO BSS123 Units VDSS Drain-Source Voltage 100 V ^DGR , Current Vcs = 100 V, VGS = 0 V BSS100 15 MA vDS = ioov,vGS=ov BSS123 1 mA VDS = 100V,VGS=0V Tj


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PDF BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011
2010 - BSS123

Abstract: SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23
Text: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs , 2010-05-12 BSS123 Rev. 1.41 Thermal Characteristics Parameter Symbol Values Unit min , =0.17A Page 2 2010-05-12 BSS123 Rev. 1.41 Electrical Characteristics, at Tj = 25 °C, unless , 2010-05-12 BSS123 Rev. 1.41 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA


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PDF BSS123 PG-SOT23 VPS05161 L6327: L6433: BSS123 SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23
1999 - bss123

Abstract: No abstract text available
Text: BSS123 Rev. 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary â , VPS05161 Type Package Ordering Code Tape and Reel Information Marking BSS123 PG-SOT23 Q62702-S512 L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Q67000-S245 SAs BSS123 PG-SOT23 , category; DIN IEC 68-1 55/150/56 Page 1 2006-11-02 BSS123 Rev. 1.3 Thermal Characteristics , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-11-02 BSS123


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PDF BSS123 PG-SOT23 VPS05161 Q62702-S512 L6327: Q67000-S245 bss123
1999 - Not Available

Abstract: No abstract text available
Text: Rev. 1.1 BSS123 SIPMOS Small-Signal-Transistor Feature · N-Channel · Enhancement mode · , Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package PG-SOT23 , Characteristics Drain-source breakdown voltage VGS=0, ID =250µA BSS123 Symbol min. RthJA - Values typ , *RDS(on)max, ID=0.14A VGS=0, VDS=25V, f=1MHz BSS123 Symbol Conditions min. 0.09 - Values , Power dissipation Ptot = f (TA) 0.38 BSS123 BSS123 2 Drain current ID = f (TA) parameter: VGS 10


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PDF BSS123 PG-SOT23 VPS05161 Q62702-S512 Q67000-S245 E6327:
1999 - SAs SOT23

Abstract: BSS123 E6327 Q62702-S512 Q67000-S245 sas sot23-3 bss123 infineon sot23
Text: BSS123 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Ordering Code Tape and Reel Information Marking BSS123 SOT23 Q62702-S512 E6327: 3000 pcs/reel SAs BSS123 SOT23 Q67000-S245 E6433: 10000 pcs/reel SAs Maximum , T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-12-10 BSS123 , 2002-12-10 BSS123 Rev. 1.0 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified


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PDF BSS123 VPS05161 Q62702-S512 E6327: Q67000-S245 E6433: SAs SOT23 BSS123 E6327 Q62702-S512 Q67000-S245 sas sot23-3 bss123 infineon sot23
1997 - BSS123

Abstract: BSS100 equivalent BSS100 bss100 transistor
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS(ON) = 6 @ VGS = 10V. BSS123 : 0.17A, 100V. RDS , . D G BSS100 BSS123 Absolute Maximum Ratings S T A = 25°C unless otherwise noted , ) ± 20 ID BSS100 Drain Current - Continuous - Pulsed BSS123 0.22 0.17 0.9 , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F / BSS123 Rev


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PDF BSS100 BSS123 BSS100: BSS123: BSS123 BSS100 equivalent bss100 transistor
2012 - Not Available

Abstract: No abstract text available
Text: Equivalent Circuit Ordering Information (Note 3) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 , www.diodes.com March 2012 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , minimize self-heating effect. BSS123 Document number: DS30366 Rev. 16 - 2 2 of 5 www.diodes.com


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PDF BSS123 DS30366
2003 - BSS123

Abstract: No abstract text available
Text: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description , Reel Size Tape width Quantity SA BSS123 7’’ 8mm 3000 units ©2003 Fairchild Semiconductor Corporation BSS123 Rev G(W) BSS123 June 2003 Symbol Parameter TA = 25° unless , , Duty Cycle ≤ 2.0% BSS123 Rev G(W) BSS123 Electrical Characteristics BSS123 Typical , ) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. BSS123 Rev G(W


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PDF BSS123 BSS123
transistor 45 f 123

Abstract: No abstract text available
Text: c m p r M - iii n SEMICONDUCTOR September 1996 tm BSS100 / BSS123 N-Channel , drivers, and other switching applications. ■BSS100: 0.22A, 100V. RD (0 ) = 6 0 @ VG 10V. BSS123 : SN , Continuous - Pulsed PD Total Power Dissipation @ Tfl = 25 °C BSS123 0.22 0.17 0.9 , 997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F / BSS123 Rev. F , %. BSS100 Rev. F / BSS123 Rev. F Typical Electrical Characteristics V , D R A IN -S O U R C E V O


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PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor 45 f 123
2003 - SOT23 K23

Abstract: No abstract text available
Text: Ordering Information Device BSS123-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3 , BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS123 NEW PRODUCT , specified Symbol VDSS VDGR Continuous Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG BSS123 100 100 ±20 170 , . DS30366 Rev. 3 - 2 1 of 3 www.diodes.com BSS123 ã Diodes Incorporated NEW PRODUCT , 2 2 of 3 www.diodes.com BSS123 VGS(th), NORMALIZED THRESHOLD VOLTAGE 1.2 2.2 RDS(ON


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PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 SOT23 K23
2003 - BSS123

Abstract: No abstract text available
Text: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description , SA BSS123 7'' 8mm 3000 units ©2003 Fairchild Semiconductor Corporation BSS123 Rev G(W) BSS123 June 2003 Symbol Parameter TA = 25°C unless otherwise noted Test , Width 300 µs, Duty Cycle 2.0% BSS123 Rev G(W) BSS123 Electrical Characteristics BSS123 , . Body Diode Forward Voltage Variation with Source Current and Temperature. BSS123 Rev G(W


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PDF BSS123 OT-23 BSS123
2012 - BSS123Q-13

Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
Text: Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0 @ VGS = 10V , 2008 V Mar 3 2009 W Apr 4 YM BSS123 Document number: DS30366 Rev. 16 - 2 1 of 5 www.diodes.com March 2012 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , . BSS123 Document number: DS30366 Rev. 16 - 2 2 of 5 www.diodes.com March 2012 © Diodes


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PDF BSS123 DS30366 BSS123Q-13 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
1999 - SP000084574

Abstract: PG-SOT-23 BSS123 bss123 infineon SAS SOT23 DIODE MARKING CODE G SOT23 PG-SOT23 BSS123(A) equivalent bss123 marking Q62702-S512
Text: BSS123 Rev. 1.2 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Ordering Code Tape and Reel Information Marking BSS123 PG-SOT23 Q62702-S512 E6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Q67000-S245 SAs BSS123 PG-SOT23 , ; DIN IEC 68-1 55/150/56 Page 1 2005-07-21 BSS123 Rev. 1.2 Thermal Characteristics , =0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2005-07-21 BSS123 Rev. 1.2 Electrical


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PDF BSS123 PG-SOT23 VPS05161 Q62702-S512 E6327: Q67000-S245 SP000084574 PG-SOT-23 BSS123 bss123 infineon SAS SOT23 DIODE MARKING CODE G SOT23 PG-SOT23 BSS123(A) equivalent bss123 marking Q62702-S512
1997 - BSS100

Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor , , 100V. RDS(ON) = 6 @ VGS = 10V. BSS123 : 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design , . D G BSS100 BSS123 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F1 / BSS123 Rev


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PDF BSS100 BSS123 BSS100: BSS123: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
2013 - Not Available

Abstract: No abstract text available
Text: Information (Note 4) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 17 - 2 1 of 5 www.diodes.com July 2013 © Diodes Incorporated BSS123 , minimize self-heating effect. BSS123 Document number: DS30366 Rev. 17 - 2 2 of 5 www.diodes.com


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PDF BSS123 AEC-Q101 DS30366
2013 - Not Available

Abstract: No abstract text available
Text: ) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 18 - 2 1 of 5 www.diodes.com August 2013 © Diodes Incorporated BSS123 Maximum Ratings (@TA = +25°C , self-heating effect. BSS123 Document number: DS30366 Rev. 18 - 2 2 of 5 www.diodes.com August 2013


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PDF BSS123 AEC-Q101 DS30366
2010 - BSS123Q-7-F

Abstract: MARKING CODE 028a sot 23
Text: Circuit Top View Ordering Information (Note 3) Part Number BSS123-7-F BSS123Q-7-F Notes , BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 100V RDS(ON , Information BSS123 Document number: DS30366 Rev. 10 - 2 1 of 5 www.diodes.com July 2011 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source , self-heating effect. BSS123 Document number: DS30366 Rev. 10 - 2 2 of 5 www.diodes.com July 2011


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PDF BSS123 DS30366 BSS123Q-7-F MARKING CODE 028a sot 23
2003 - BSS123 spice

Abstract: K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 bss123 MARKING CODE 250dk SOT23 K23 J-STD-020A
Text: : Packaging Shipping BSS123-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our , terminal finish) part number, please add "-F" suffix to part number above. Example: BSS123-7-F. Marking , BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 , specified Symbol BSS123 Units Drain-Source Voltage Characteristic VDSS 100 V , /datasheets/ap02001.pdf. DS30366 Rev. 4 - 2 1 of 3 www.diodes.com BSS123 ã Diodes Incorporated


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PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, com/datasheets/ap02007 BSS123-7-F. DS30366 BSS123 spice K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 bss123 MARKING CODE 250dk SOT23 K23 J-STD-020A
2011 - K23 mOSFET

Abstract: No abstract text available
Text: Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case , BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0 @ VGS = 10V , 2017 E Dec D BSS123 Document number: DS30366 Rev. 15 - 2 1 of 5 www.diodes.com December 2011 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic , ://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. BSS123 Document number


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PDF BSS123 DS30366 K23 mOSFET
2005 - BSS123 spice

Abstract: BSS123 BSS123-7 BSS123-7-F bss123 marking DS30366
Text: : Packaging Shipping BSS123-7 SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our , number, please add "-F" suffix to the part number above. Example: BSS123-7-F. Marking Information , SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR , : 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol BSS123 , added lead. DS30366 Rev. 5 - 2 1 of 3 www.diodes.com BSS123 ã Diodes Incorporated @ TA


Original
PDF BSS123 OT-23 com/datasheets/ap02007 BSS123-7-F. DS30366 BSS123 spice BSS123 BSS123-7 BSS123-7-F bss123 marking
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Abstract: No abstract text available
Text: caloric CORPORATION N-Channel Enhancement Mode Vertical DMOS FET BSS100L/ BSS123 FEATURES · · · · · · · Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature , Switches · Amplifiers ORDERING INFORMATION Part BSS123 BSS100L XBSS123 Package Surface Mount SOT-23 Plastic , a = 25°C) Operating/Storage Temperature Range BSS100L 100 170 680 ±20 .2 -50 t o +150 BSS123 100 170 680 ±20 0.36 -55 t o +150 UNITS V mA mA V W °C 9-5 BSS100L/ BSS123 Calotta


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PDF BSS100L/BSS123 BSS123 BSS100L XBSS123 OT-23 100mA, 100mA 280mA 300ns.
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