The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
BSS123W-7-F Diodes Incorporated Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123NH6327XTSA1 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123-7-F Diodes Incorporated Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
BSS123TA Diodes Incorporated Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
BSS123WQ-7-F Diodes Incorporated Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BSS123NH6433XTMA1 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS123 NXP Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BSS123 NXP

Abstract:
Text: 2000 4 Rev 1.000 Mouser Electronics Related Product Links 771-BSS123-T/R - NXP BSS123 ,215 , mounting package BSS123 SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 150 mA g RDS(ON) 6 , The BSS123 is supplied in the SOT23 subminiature surface mounting package. PINNING PIN 1 2 3 gate , V; ID = 120 mA VDS = 25 V; ID = 120 mA MIN. 100 1 VGS = 0 V; VDS = 25 V; f = 1 MHz - BSS123 , Plastic surface mounted package; 3 leads SOT23 BSS123 D B E A X HE v M A 3 Q


Original
PDF BSS123 BSS123 771-BSS123-T/R BSS123 NXP SMD TRANSISTOR A1 SOT23 bss123 smd BSS123,215
2009 - BSS138 NXP

Abstract:
Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of , 2N7002E 2N7002F 2N7002 PMZ760SN BST82 BSH114 BSS123 PMV213SN 1) PML260SN PML340SN , BSP372 BSP373 BSP603S2L BSP615S2L BSP88 BSP89 BSP92P BSS119 BSS123 BSS138 BSS138N BSS7728N BSS83P BSS84 BSS84P NXP cross type 2N7002 PMGD780SN 2N7002E 2N7002E 2N7002K 2N7002K 2N7002 , IRFL014N IRFL024N IRFL024Z IRFL4105 IRFL4310 IRFM120A IRLL014N IRLL024N IRLL024Z NXP cross type


Original
PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 PMV65XP IRLL014N BSP250 FDC638APZ
2007 - DIP4NS

Abstract:
Text: R13 2k 0603 1 2 C14 22n 0603 X7R 50V 3 P0D1103 P0D1102 Q5 BSS123 P0TP701 , TP7 GND R13 2k 0603 1 2 C14 22n 0603 X7R 50V 3 P0D1103 P0D1102 Q5 BSS123 , 1 Diode, SCH, SOD123, 40V, 120mA NXP BAS40H 2 Diode, FR, SOD123, 200V, 1A Rohm , Fairchild BSS123 1 Terminal Block 2 pos Phoenix Contact 1715721 1 Fuse, 125V, 1,25A


Original
PDF LM3445 CSP-9-111S2) CSP-9-111S2. RD-172 DIP4NS BR1 400V CAP 10u 10 25V X7R 1206 XSTR hi1206t161r-10 CAP 470N 50V X7R ic bridge rectifier thermistor MF72 BSS123 NXP CGRM4007-G
1999 - BSS123

Abstract:
Text: BSS123 Rev. 1.4 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Pb-free Tape and Reel Information Marking BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel SAs Maximum Ratings, at Tj = 25 , IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2006-12-01 BSS123 Rev. 1.4 , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-12-01 BSS123


Original
PDF BSS123 PG-SOT23 VPS05161 L6327: L6433: BSS123 SAs SOT23 transistor bss123 BSS123(A) equivalent L6327 MARKING QG 6 PIN PG-SOT23
1997 - BSS100

Abstract:
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor , , 100V. RDS(ON) = 6 @ VGS = 10V. BSS123 : 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design , . D G BSS100 BSS123 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F1 / BSS123 Rev


Original
PDF BSS100 BSS123 BSS100: BSS123: transistor P1 P BSS100 TO-92 bss100 transistor bSS100 TRANSISTOR DATASHEET F1 SOT23 BSS100 equivalent BSS123 transistor bss123
2010 - BSS123

Abstract:
Text: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs , 2010-05-12 BSS123 Rev. 1.41 Thermal Characteristics Parameter Symbol Values Unit min , =0.17A Page 2 2010-05-12 BSS123 Rev. 1.41 Electrical Characteristics, at Tj = 25 °C, unless , 2010-05-12 BSS123 Rev. 1.41 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA


Original
PDF BSS123 PG-SOT23 VPS05161 L6327: L6433: BSS123 BSS123 L6433 SAs sot23 L6327 PG-SOT-23 PG-SOT23
1999 - bss123

Abstract:
Text: BSS123 Rev. 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary â , VPS05161 Type Package Ordering Code Tape and Reel Information Marking BSS123 PG-SOT23 Q62702-S512 L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Q67000-S245 SAs BSS123 PG-SOT23 , category; DIN IEC 68-1 55/150/56 Page 1 2006-11-02 BSS123 Rev. 1.3 Thermal Characteristics , =4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2006-11-02 BSS123


Original
PDF BSS123 PG-SOT23 VPS05161 Q62702-S512 L6327: Q67000-S245 bss123
1999 - SAs SOT23

Abstract:
Text: BSS123 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Ordering Code Tape and Reel Information Marking BSS123 SOT23 Q62702-S512 E6327: 3000 pcs/reel SAs BSS123 SOT23 Q67000-S245 E6433: 10000 pcs/reel SAs Maximum , T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-12-10 BSS123 , 2002-12-10 BSS123 Rev. 1.0 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified


Original
PDF BSS123 VPS05161 Q62702-S512 E6327: Q67000-S245 E6433: SAs SOT23 BSS123 bss123 infineon sot23 E6327 Q62702-S512 Q67000-S245 sas sot23-3
1999 - Not Available

Abstract:
Text: Rev. 1.1 BSS123 SIPMOS Small-Signal-Transistor Feature · N-Channel · Enhancement mode · , Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package PG-SOT23 , Characteristics Drain-source breakdown voltage VGS=0, ID =250µA BSS123 Symbol min. RthJA - Values typ , *RDS(on)max, ID=0.14A VGS=0, VDS=25V, f=1MHz BSS123 Symbol Conditions min. 0.09 - Values , Power dissipation Ptot = f (TA) 0.38 BSS123 BSS123 2 Drain current ID = f (TA) parameter: VGS 10


Original
PDF BSS123 PG-SOT23 VPS05161 Q62702-S512 Q67000-S245 E6327:
2012 - Not Available

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , Equivalent Circuit Ordering Information (Note 3) Part Number BSS123 -7-F BSS123Q-13 BSS123Q-7 Notes , Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 , www.diodes.com March 2012 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , minimize self-heating effect. BSS123 Document number: DS30366 Rev. 16 - 2 2 of 5 www.diodes.com


Original
PDF BSS123 DS30366
2003 - BSS123

Abstract:
Text: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description , Reel Size Tape width Quantity SA BSS123 7’’ 8mm 3000 units ©2003 Fairchild Semiconductor Corporation BSS123 Rev G(W) BSS123 June 2003 Symbol Parameter TA = 25° unless , , Duty Cycle ≤ 2.0% BSS123 Rev G(W) BSS123 Electrical Characteristics BSS123 Typical , ) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. BSS123 Rev G(W


Original
PDF BSS123 BSS123
2003 - BSS123

Abstract:
Text: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description , SA BSS123 7'' 8mm 3000 units ©2003 Fairchild Semiconductor Corporation BSS123 Rev G(W) BSS123 June 2003 Symbol Parameter TA = 25°C unless otherwise noted Test , Width 300 µs, Duty Cycle 2.0% BSS123 Rev G(W) BSS123 Electrical Characteristics BSS123 , . Body Diode Forward Voltage Variation with Source Current and Temperature. BSS123 Rev G(W


Original
PDF BSS123 OT-23 BSS123
2012 - BSS123Q-13

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0 @ VGS = 10V , Number BSS123 -7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case , 2008 V Mar 3 2009 W Apr 4 YM BSS123 Document number: DS30366 Rev. 16 - 2 1 of 5 www.diodes.com March 2012 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , . BSS123 Document number: DS30366 Rev. 16 - 2 2 of 5 www.diodes.com March 2012 © Diodes


Original
PDF BSS123 DS30366 BSS123Q-13 bss123 c23 BSS123Q-7 K23 mOSFET K23 SOT23
1999 - SP000084574

Abstract:
Text: BSS123 Rev. 1.2 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel , Package Ordering Code Tape and Reel Information Marking BSS123 PG-SOT23 Q62702-S512 E6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Q67000-S245 SAs BSS123 PG-SOT23 , ; DIN IEC 68-1 55/150/56 Page 1 2005-07-21 BSS123 Rev. 1.2 Thermal Characteristics , =0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2005-07-21 BSS123 Rev. 1.2 Electrical


Original
PDF BSS123 PG-SOT23 VPS05161 Q62702-S512 E6327: Q67000-S245 SP000084574 PG-SOT-23 BSS123 SAS SOT23 bss123 infineon DIODE MARKING CODE G SOT23 BSS123(A) equivalent PG-SOT23 E6327 marking code 10 sot23
2013 - Not Available

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , Information (Note 4) Part Number BSS123 -7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial , May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 17 - 2 1 of 5 www.diodes.com July 2013 © Diodes Incorporated BSS123 , minimize self-heating effect. BSS123 Document number: DS30366 Rev. 17 - 2 2 of 5 www.diodes.com


Original
PDF BSS123 AEC-Q101 DS30366
2013 - Not Available

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , ) Part Number BSS123 -7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive , Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 18 - 2 1 of 5 www.diodes.com August 2013 © Diodes Incorporated BSS123 Maximum Ratings (@TA = +25°C , self-heating effect. BSS123 Document number: DS30366 Rev. 18 - 2 2 of 5 www.diodes.com August 2013


Original
PDF BSS123 AEC-Q101 DS30366
2010 - BSS123Q-7-F

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 100V RDS(ON , Circuit Top View Ordering Information (Note 3) Part Number BSS123 -7-F BSS123Q-7-F Notes , Information BSS123 Document number: DS30366 Rev. 10 - 2 1 of 5 www.diodes.com July 2011 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source , self-heating effect. BSS123 Document number: DS30366 Rev. 10 - 2 2 of 5 www.diodes.com July 2011


Original
PDF BSS123 DS30366 BSS123Q-7-F MARKING CODE 028a sot 23
1997 - BSS100

Abstract:
Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor , , 100V. RDS(ON) = 6 @ VGS = 10V. BSS123 : 0.17A, 100V. RDS(ON) = 6 @ VGS = 10V High density cell design , . D G BSS100 BSS123 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F1 / BSS123 Rev


Original
PDF BSS100 BSS123 BSS100: BSS123: bss123 BSS100 TO-92 CBVK741B019 F63TNR PN2222N
2011 - K23 mOSFET

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0 @ VGS = 10V , Number BSS123 -7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case , 2017 E Dec D BSS123 Document number: DS30366 Rev. 15 - 2 1 of 5 www.diodes.com December 2011 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic , ://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. BSS123 Document number


Original
PDF BSS123 DS30366 K23 mOSFET
2011 - K23 mOSFET

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0 @ VGS = 10V , (Note 3) Part Number BSS123 -7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive , 2015 C Oct O 2016 D Nov N 2017 E Dec D BSS123 Document number: DS30366 Rev. 14 - 2 1 of 5 www.diodes.com November 2011 © Diodes Incorporated BSS123 Maximum Ratings @TA = 25°C unless otherwise , test used to minimize self-heating effect. BSS123 Document number: DS30366 Rev. 14 - 2 2 of 5


Original
PDF BSS123 DS30366 K23 mOSFET K23 mOSFET DIAGRAM
2011 - K23 SOT23 MARKING

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0 @ VGS = 10V , S Top View Equivalent Circuit Top View Ordering Information (Note 3) Part Number BSS123 -7-F BSS123Q-7-F BSS123 -13-F BSS123Q-13-F Notes: Qualification Commercial Automotive Commercial Automotive , Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D BSS123 Document number: DS30366 Rev. 12 - 2 1 of 5 www.diodes.com September 2011 © Diodes Incorporated BSS123 Maximum Ratings @TA =


Original
PDF BSS123 DS30366 K23 SOT23 MARKING
2013 - Not Available

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON , View Equivalent Circuit Ordering Information (Note 4) Part Number BSS123 -7-F BSS123Q , Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 , BSS123 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol , minimize self-heating effect. BSS123 Document number: DS30366 Rev. 17 - 2 2 of 5 www.diodes.com


Original
PDF BSS123 AEC-Q101 DS30366
2000 - Not Available

Abstract:
Text: FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching â , €¢ Telephone ringer 1 source 3 drain 3 Top view 1 2 The BSS123 is supplied in the , Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET BSS123 , Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET BSS123 , BSS123 DEFINITIONS Data sheet status Objective specification This data sheet contains target or


Original
PDF BSS123 BSS123
2005 - DS30366

Abstract:
Text: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR , otherwise specified Symbol BSS123 Units Drain-Source Voltage Characteristic VDSS 100 V , BSS123 ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol , Drain-Source Current BSS123 RDS(ON), NORMALIZED ON-RESISTANCE VGS(th), NORMALIZED THRESHOLD VOLTAGE , 25 Ordering Information (Note 4) Device Notes: Packaging Shipping BSS123 -7-F SOT


Original
PDF BSS123 OT-23 DS30366 K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
2008 - BSS123 spice

Abstract:
Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online , Halogens or Sb2O3 Fire Retardants. BSS123 Document number: DS30366 Rev.8 - 2 1 of 3 www.diodes.com May 2008 © Diodes Incorporated BSS123 0.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE , , DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance BSS123 Document number: DS30366 Rev.8 - 2 25 2 of 3 www.diodes.com May 2008 © Diodes Incorporated BSS123 Ordering Information (Note 5


Original
PDF BSS123 OT-23 J-STD-020C MIL-STD-202, DS30366 BSS123 spice "k23" sot-23 BSS123-7-F BSS123 K23 SOT-23 MARKING K23 SOT23
Supplyframe Tracking Pixel