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BS170P Diodes Incorporated Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
BS170FTA Diodes Incorporated Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
BS170 Atmel Corporation Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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  You can filter table by choosing multiple options from dropdownShowing 70 results of 90
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BS170 ON Semiconductor RS Components 4,801 £0.13 £0.09
BS170 ON Semiconductor Avnet 71,404 $0.04 $0.04
BS170 ON Semiconductor element14 Asia-Pacific 19,608 $0.54 $0.06
BS170 ON Semiconductor Chip1Stop 16 $0.71 $0.20
BS170 ON Semiconductor Chip1Stop 16,825 $0.15 $0.06
BS170 Fairchild Semiconductor Corporation Chip One Exchange - -
BS170 Chip One Exchange - -
BS170 Vishay Intertechnologies Chip One Exchange - -
BS170 Fairchild Semiconductor Corporation Schukat electronic 75,100 €0.08 €0.04
BS170 ON Semiconductor Newark element14 10,636 $0.40 $0.05
BS170 NTE Electronics Inc Newark element14 33 $0.82 $0.63
BS170 ON Semiconductor Newark element14 17,099 $0.44 $0.06
BS170 Fairchild Semiconductor Corporation New Advantage Corporation 82,449 $0.45 $0.35
BS170 Fairchild Semiconductor Corporation ComS.I.T. - -
BS170 ON Semiconductor Farnell element14 35,979 £0.21 £0.07
BS170 ON Semiconductor RS Components 3,000,000 £0.07 £0.06
BS170 ON Semiconductor RS Components 198,300 £0.22 £0.09
BS170 Unknown Bristol Electronics - -
BS170 Philips Semiconductors New Advantage Corporation - -
BS170 Fairchild Semiconductor Corporation Bristol Electronics - -
BS170 ON Semiconductor Rochester Electronics 2,440 $0.11 $0.09
BS170 ON Semiconductor Future Electronics 16,811 $0.23 $0.14
BS170 Fairchild Semiconductor Corporation Rochester Electronics 244,648 $0.11 $0.09
BS170_D26Z ON Semiconductor Avnet - -
BS170_D26Z ON Semiconductor Avnet 10,000 $0.04 $0.04
BS170_D26Z ON Semiconductor Avnet 0 $0.10 $0.08
BS170_D26Z ON Semiconductor Avnet - -
BS170_D26Z ON Semiconductor RS Components 122,500 £0.22 £0.09
BS170_D26Z ON Semiconductor RS Components 9,836 £0.11 £0.09
BS170_D27Z ON Semiconductor Chip1Stop 3,058 $0.13 $0.08
BS170_D27Z ON Semiconductor Avnet 0 $0.10 $0.08
BS170_D27Z ON Semiconductor Newark element14 2,576 $0.44 $0.09
BS170_D27Z ON Semiconductor Avnet 10,000 $0.04 $0.04
BS170_D74Z ON Semiconductor Chip1Stop 42,000 $0.06 $0.05
BS170_D74Z ON Semiconductor Avnet 0 $0.04 $0.04
BS170_D75Z ON Semiconductor Chip1Stop 6,000 $0.08 $0.08
BS170_D75Z ON Semiconductor Avnet 0 $0.04 $0.04
BS170-D26Z ON Semiconductor Newark element14 3,438 $0.48 $0.10
BS170-D26Z ON Semiconductor Chip1Stop 40,000 $0.07 $0.06
BS170-D26Z ON Semiconductor Future Electronics 12,000 $0.15 $0.14
BS170-D26Z ON Semiconductor Future Electronics 0 $0.28 $0.17
BS170-D26Z Fairchild Semiconductor Corporation Schukat electronic 42,400 €0.08 €0.05
BS170-D26Z ON Semiconductor element14 Asia-Pacific 3,453 $0.54 $0.06
BS170-D26Z Fairchild Semiconductor Corporation New Advantage Corporation 12,000 $0.30 $0.23
BS170-D26Z ON Semiconductor Farnell element14 3,888 £0.22 £0.07
BS170-D27Z ON Semiconductor Farnell element14 13,782 £0.22 £0.07
BS170-D27Z ON Semiconductor element14 Asia-Pacific 6,087 $0.54 $0.06
BS170-D27Z ON Semiconductor Newark element14 6,037 $0.44 $0.09
BS170-D27Z ON Semiconductor Chip1Stop 10,000 $0.07 $0.06
BS170-D27Z ON Semiconductor Future Electronics 0 $0.08 $0.08
BS170-D75Z ON Semiconductor Farnell element14 2,760 £0.22 £0.07
BS170-D75Z ON Semiconductor Newark element14 2,650 $0.44 $0.09
BS170-D75Z ON Semiconductor element14 Asia-Pacific 2,660 $0.54 $0.06
BS170.... ON Semiconductor element14 Asia-Pacific 10,959 $0.54 $0.06
BS170"D26Z ON Semiconductor element14 Asia-Pacific 0 $0.33 $0.09
BS170"D26Z ON Semiconductor element14 Asia-Pacific 0 $0.39 $0.39
BS170"D27Z ON Semiconductor Farnell element14 2,578 £0.39 £0.11
BS170"D27Z ON Semiconductor element14 Asia-Pacific 2,692 $0.32 $0.32
BS170D26Z ON Semiconductor TME Electronic Components 2,705 $0.12 $0.06
BS170D27Z Fairchild Semiconductor Corporation ComS.I.T. - -
BS170D27Z ON Semiconductor TME Electronic Components 3,140 $0.15 $0.06
BS170F Diodes Incorporated Newark element14 502 $0.80 $0.33
BS170F Diodes Incorporated Farnell element14 0 £0.50 £0.22
BS170F Diodes Incorporated element14 Asia-Pacific 0 $0.90 $0.41
BS170F Diodes Incorporated element14 Asia-Pacific 0 $0.90 $0.41
BS170FTA Diodes Incorporated Future Electronics 0 $0.55 $0.33
BS170FTA Diodes Incorporated Allied Electronics & Automation 0 $0.69 $0.50
BS170FTA Diodes Incorporated Avnet 0 $0.22 $0.19
BS170FTA Diodes Incorporated Avnet 0 $0.28 $0.23
BS170FTA Diodes Incorporated New Advantage Corporation 3,000 $0.41 $0.41
BS170FTA Zetex / Diodes Inc RS Components 8,225 £0.59 £0.23
BS170FTA Diodes Incorporated Future Electronics 0 $0.29 $0.29
BS170FTA Zetex / Diodes Inc RS Components 26,405 £0.40 £0.23
BS170G ON Semiconductor ComS.I.T. - -
BS170G ON Semiconductor Allied Electronics & Automation 0 $0.51 $0.46
BS170P Diodes Incorporated Future Electronics 5,900 $0.31 $0.29
BS170P Diodes Incorporated Avnet 0 $0.30 $0.26
BS170P Zetex / Diodes Inc RS Components 1,900 £0.34 £0.31
BS170P Diodes Incorporated Avnet - -
BS170P Diodes Incorporated Newark element14 2,761 $0.99 $0.43
BS170P Diodes Incorporated element14 Asia-Pacific 2,761 $1.17 $0.46
BS170P Diodes Incorporated Chip1Stop 1,789 $0.60 $0.32
BS170P Diodes Incorporated Allied Electronics & Automation 0 $0.56 $0.40
BS170P Diodes Incorporated Farnell element14 2,593 £0.30 £0.26
BS170P Diodes Incorporated New Advantage Corporation 6,320 $1.19 $0.92
BS170RL1G ON Semiconductor ComS.I.T. - -
BS170RLRAG ON Semiconductor Allied Electronics & Automation 0 $0.16 $0.12
BS170RLRAG ON Semiconductor Farnell element14 0 £0.26 £0.05
BS170RLRM ON Semiconductor Rochester Electronics 1,100 $0.07 $0.06
D235BS170 Fairchild Semiconductor Corporation Bristol Electronics - -

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BS170 datasheet (87)

Part Manufacturer Description Type PDF
BS170 Diodes N-CHANNEL ENHANCEMENT MODE TRANSISTOR Original PDF
BS170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor; Package: TO-92; No of Pins: 3; Container: Bulk Original PDF
BS170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
BS170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
BS170 General Semiconductor DMOS Transistors (N-Channel) Original PDF
BS170 Infineon Technologies TRANS MOSFET N-CH 60V 0.3A 3TO-92 Original PDF
BS170 Motorola TMOS FET Switching Original PDF
BS170 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
BS170 On Semiconductor TRANS MOSFET N-CH 60V 0.5A 3TO-92 BULK Original PDF
BS170 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
BS170 Philips Semiconductors N-channel vertical D-MOS transistor Original PDF
BS170 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
BS170 Siemens SIPMOS Small-Signal Transistor Original PDF
BS170 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
BS170 Siemens Original PDF
BS170 Toshiba Power MOSFETs Cross Reference Guide Original PDF
BS170 Vishay Telefunken N-Channel 60-V (D-S) MOSFET Original PDF
BS170 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSISTOR, DMOS, small signal, plastic, N-Channel, TO-92 Scan PDF
BS170 ITT Semiconductors Transistors 1980 Scan PDF
BS170 ITT Semiconductors VMOS Transistor Scan PDF

BS170 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - BS170

Abstract:
Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General , Parameter BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate , Fairchild Semiconductor Corporation 150 417 °C/W BS170 Rev. C / MMBF170 Rev. D Electrical , Forward Transconductance VDS = 10 V, ID = 200 mA BS170 320 MMBF170 320 All 24 40 , ) Turn-Off Time BS170 10 MMBF170 10 VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 BS170


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PDF BS170 MMBF170 500mA OT-23, MMBF170 MOSFET bs170 MMBF170 GATE-SOURCE transistor MOSFET BS170
transistor MOSFET BS170

Abstract:
Text: & N a t i o n al A pril 1995 Semiconductor" BS170 / MMBF170 N-Channel Enhancement Mode , . v TO-92 (97) SOT-23 BS170 (TO-236AB) MMBF170 Absolute Maximum Ratings Ta = 25 , Drain-Gate Voltage (Rqs < 1MH) 60 V BS170 ^G SS Gate-Source Voltage b Drain Current - , Vps —10 V, Ip —200 mA BS170 320 MMBF170 320 Al 24 40 pF Al 17 30 , Turn-Off Time BS170 10 MMBF170 10 V ^ = 25 V, lD = 200 m A VG = 10V,RGN =25 0 S Â


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PDF BS170 MMBF170 500mA MMBF170 OT-23, transistor MOSFET BS170 MOSFET BS170
BS170

Abstract:
Text: PAIRCHII-D M ICDNDUCTQ R ! A p ril 1 9 9 5 BS170 / MMBF170 N-Channel Enhancement Mode Field , ) Gate-Source Voltage Drain Current - Continuous - Pulsed BS170 60 60 ±20 500 1200 830 6.6 -55 to 150 300 , , Junction-to-Ambient 150 417 °C/W ©1 9 9 7 Fairchild Sem iconductor Corporation BS170 Rev. C /M M B F 1 7 0 Rev , All All BS170 MMBF170 0.8 2.1 1.2 320 320 3 5 V £2 mS 9 fs DYNAMIC CHARACTERISTICS , > Turn-On Time VD D= 25 V, lD = 200 m A, VG S= 10 V, Rgen = BS170 10 ns 25 £2 MMBF170 10 VD


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PDF BS170 MMBF170 500mA OT-23, MOSFET bs170 sot23 BS170 transistor MOSFET BS170
2010 - bs170

Abstract:
Text: STRAIGHT DGS BS170_D26Z TO-92 Tape and Reel FORMING DGS BS170_D27Z TO-92 Tape and Reel FORMING DGS BS170_D74Z TO-92 AMMO FORMING DGS BS170_D75Z TO , BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description , . BS170 High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and , Maximum Ratings Symbol SOT-23 TA = 25° unless otherwise noted C Parameter BS170 MMBF170


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PDF BS170 MMBF170 500mA BS170 transistor MOSFET BS170 BS170 application note TRANSISTOR BS170
bs170

Abstract:
Text: G en era l S e m i c o n d u c t o r _ BS170 DMOS , Unit V V V mA W °C/W °C °C 4/25/01 v G en era l S e m ic o n d u c t o r ® BS170 DMOS , r ® Ratings and Characteristic Curves (T _ BS170 DMOS Transistor (N-Channel) a = , Output characteristics Pulse te s t w idth SO ms; pulse duty facto r 1 % W 1 BS170 BS170 7V , voltage mA BS170 mA BS170 103 T a = 25°C 10 ' 10 / ! I 10 ' I 10 ' 10 '


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PDF BS170 O-226AA 20K/box 20K/box bs170
MARKING bs170

Abstract:
Text: A pril 1995 National 0 Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode , . M SOT-23 (T0236AB) MMBF170, marking SZ TO-92 (97) BS170 Absolute Maximum Ratings T a = 25°C unless otherwise noted BS170 Symbol Paramatar V p* Drain-Source Voltage V po , V„g = 10 V, l„ — 200 mA BS170 320 MMBF170 320 All 24 40 PF All 17 , Vd = 25V, l„ = 200m A o Vos = 10V, F U = 2 5 0 BS170 10 = 2 5 ^ Ip = 500 mA, VG 1 0 V


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PDF BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170
bs170

Abstract:
Text: BS170 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed , 0, lF = 0.5 A, Tj = 25 °C If Vf Value 0.5 0.85 Unit A V 138 ITT INTERMETALL BS170 , BS170 Admissible power dissipation versus temperature Va8d provided that leads are kept at ambient , factor 1 W 1 'S \ BS170 BS170 r 0.8 0.8 7 ^ = 25 °C v \ \ V \ rxoN) 0.6 0.4 , % Drain-source current versus gate threshold voltage mA BS170 mA BS170 ' vos ' 'fesfroi 140


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PDF BS170 bs170 BS170 Intermetall ITT Intermetall
1999 - 2n7000 equivalent

Abstract:
Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part , VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 , S 3 N Top View Top View Plastic: VQ1000J Sidebraze: VQ1000P BS170 Updates to , , BS170 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Total Quad Single Parameter , Junction-to-Ambient Operating Junction and Storage Temperature Range RthJA TJ, Tstg VQ1000J/P BS170


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PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 equivalent of BS170 EQUIVALENT FOR bs170 BS170 2n7002 siliconix 2N7002 MARKING mosfet bs170 VQ1000J/P
2000 - BS170

Abstract:
Text: Device Package Shipping BS170 TO­92 1000 Unit/Box BS170RLRA TO­92 2000 Tape & Reel BS170RLRM TO­92 2000 Ammo Pack BS170RLRP TO­92 2000 Ammo Pack BS170RL1 TO­92 2000 Tape & Reel BS170ZL1 TO­92 2000 Ammo Pack http://onsemi.com 2 BS170 RESISTIVE , BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N­Channel TO­92 MAXIMUM , BS170 YWW 1 Drain 3 Source 2 Gate Y WW = Year = Work Week ORDERING INFORMATION


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PDF BS170 r14525 BS170/D BS170 BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
2N7002 marking code 72

Abstract:
Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V (B R )D S S M i n (V ) rDS(on) Max (Q , 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA 25°C UNLESS OTHERWISE , = 100cC PD flthJA T j, TStg TA= 25°C Ta= 100°C d IDM Total Quad VQ1000J/P BS170 60 ±25 ±20 0.225 0.14 , 11-139 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix SPECIFICATIONS-2N 7000 AND 2N7002 (TA = 25


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PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000J VQ1000P BS170 S-04279-- 16-Jul-01 2N7002 marking code 72 2H7000 2N7002 marking code 72 J TVP8 2N7002 marking code vishay Marking Code 72
VQ1000J

Abstract:
Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part , VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 , S 3 N Top View Top View Plastic: VQ1000J Sidebraze: VQ1000P BS170 Updates to , , BS170 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Total Quad Single Parameter , Junction-to-Ambient Operating Junction and Storage Temperature Range RthJA TJ, Tstg VQ1000J/P BS170


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PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, VQ1000J 2n7000 2N7002 BS170 S-52429 TO-92-18R VQ1000J/P VQ1000P
2009 - mosfet bs170

Abstract:
Text: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor Features General , BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , BS170 MMBF170 Units PD Maximum Power Dissipation Derate above 25°C 830 6.6 300 2.4 , Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 1 BS170 / MMBF170 - N-Channel , VDS = VGS, ID = 1 mA All 2.1 3 V All 1.2 5 BS170 320 V On


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PDF BS170 MMBF170 500mA mosfet bs170 equivalent of BS170 EQUIVALENT FOR bs170 BS170 application note sot23 BS170 bs170 datasheet MMBF170 GTO Driver BS170 DATA SHEET
MOSFET S170

Abstract:
Text: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number 2N7000 2N7002 VQIOOOJ VQIOOOP BS170 60 V(BR)DSS M i n (V ) *t>S(on , Plastic: Sidebraze: VQIOOOJ VQIOOOP BS170 Updates to this data sheet may be obtained v ia facsim ile by , Siliconix S-52429- Rev. E, 28-Apr-97 2N7000/7002, VQIOOOJ/P, BS170 Absolute Maximum Ratings (Ta = 25 , 0.073 0.8 0.2 0.08 625 V Q 1000J 60 ±30 ±20 0.225 0.14 I 1.3 0.52 96 V Q 1000P 60 BS170 60 ±25


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PDF 2N7000/7002, BS170 2N7000 2N7002 BS170 S-52429-- 28-Apr-97 VQ1000J/P, MOSFET S170 s170 mosfet S-52429 s170 1000J s170 to92
equivalent of BS170

Abstract:
Text: BS170 DMOS Transistors (N-Channel) FEATURES TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) High input impedance High-speed switching No minority carrier storage , Drop (typ.) at VGS = 0, IF = 0.5 A, Tj = 25 °C VF 0.85 V 4/98 BS170 ELECTRICAL , . RATINGS AND CHARACTERISTIC CURVES BS170 RATINGS AND CHARACTERISTIC CURVES BS170 RATINGS AND CHARACTERISTIC CURVES BS170 General Semiconductor


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PDF BS170 equivalent of BS170 BS170 bs170 TO-92 bs170 datasheet TO 92 BS170 transistor BS170
2001 - 2N7002 marking code 72

Abstract:
Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY , 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 , 3 Top View BS170 www.vishay.com 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix , Temperature Range BS170 "25 RthJA V "20 0.115 0.225 0.225 0.5 0.13 0.073 , Number: 70226 S-04279-Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix


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PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J O-226AA, BS170 2N7002 marking code 72 code for 2n7002 2N7002 VQ1000J 2N7000 MOSFET VQ1000J/P SILICONIX 2N7002 2N7002 Siliconix 2N7002 marking code vishay
2004 - BS170

Abstract:
Text: Shipping BS170 TO-92 (TO-226) 1000 Unit / Box BS170G TO-92 (TO-226) (Pb-Free) 1000 Unit / Box Device BS170RLRA 2000 Tape & Reel BS170RLRM 2000 Tape & Ammo Box BS170RLRP TO-92 ( (TO-226) ) 2000 Tape & Ammo Box BS170RL1 2000 Tape & Reel BS170ZL1 2000 Tape & Ammo , BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N-Channel TO-92 (TO-226) Features , 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 YWW 1 Drain 3 Source 2 Gate Y WW


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PDF BS170 O-226) BS170/D BS170 BS170G bs170 TO-92 BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
Not Available

Abstract:
Text: April 1995 N BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General , T-23 Absolute Maximum Ratings =25°C unless otherwise noted Symbol Parameter BS170 , ° C /\N BS170 Rev. Cl MMBF170 Rev. D Electrical Characteristics (t a = 25°c unless , = 10V, lD= 200 mA S r i DS(ON) 0.8 BS170 320 MMBF170 320 All 24 40 PF , ) Turn-On Time VD = 25 V, lD = 200 m A, D VS = 10V,R SEN=25£2 S BS170 10 VD = 25 V, lD = 500


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PDF BS170 MMBF170 500mA MMBF170 OT-23,
2004 - BS170

Abstract:
Text: Min Typ Max Unit ORDERING INFORMATION Device BS170 BS170G BS170RLRA BS170RLRM BS170RLRP BS170RL1 BS170ZL1 TO-92 (TO ( -226) ) Package TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) Shipping 1000 Unit , BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N-Channel TO-92 (TO-226) Features , . TO-92 (TO-226) CASE 29 STYLE 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 YWW 1 Drain 2 Gate , 40 Publication Order Number: BS170 /D BS170 ELECTRICAL CHARACTERISTICS (TA = 25°C unless


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PDF BS170 O-226) BS170 BS170RL1 MOSFET bs170
2010 - BS170

Abstract:
Text: BS170_D26Z TO-92 Tape and Reel FORMING DGS BS170_D27Z TO-92 Tape and Reel FORMING DGS BS170_D74Z TO-92 AMMO FORMING DGS BS170_D75Z TO-92 AMMO FORMING DGS , BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description , . BS170 High density cell design for low RDS(ON). Voltage controlled small signal switch , BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS


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PDF BS170 MMBF170 500mA BS170 BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
2005 - BS170

Abstract:
Text: Shipping BS170 TO-92 (TO-226) 1000 Unit/Tube BS170G TO-92 (TO-226) (Pb-Free) 1000 Unit/Tube BS170RLRA TO-92 (TO-226) 2000 Tape & Reel BS170RLRAG TO-92 (TO-226) (Pb-Free) 2000 Tape & Reel BS170RLRM TO-92 (TO-226) 2000 Tape & Reel BS170RLRMG TO-92 (TO-226) (Pb-Free) 2000 Tape & Reel BS170RLRP TO-92 (TO-226) 2000 Tape & Reel BS170RLRPG TO-92 (TO-226) (Pb-Free) 2000 Tape & Reel BS170RL1 TO-92 (TO-226) 2000 Tape & Reel BS170RL1G TO-92 (TO


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PDF BS170 O-226) o1982. BS170/D BS170 MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRAG BS170RLRA BS170RLRP
1997 - BS170 MOTOROLA

Abstract:
Text: MOTOROLA Order this document by BS170 /D SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N­Channel - Enhancement 1 DRAIN 2 GATE ® 3 SOURCE MAXIMUM RATINGS 1 , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BS170 RESISTIVE SWITCHING +25 V , Transistors, FETs and Diodes Device Data BS170 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND , ­­­ STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE 3 BS170 Motorola reserves the right to


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PDF BS170/D BS170 226AA) BS170 MOTOROLA us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
1995 - BS170

Abstract:
Text: 2N7000/7002, VQ1000J/P, BS170 Siliconix NChannel EnhancementMode MOS Transistors Product , 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V , Top View BS170 1 2N7000/7002, VQ1000J/P, BS170 Siliconix Absolute Maximum Ratings (TA = , Quad BS170 VQ1000J/P VQ1000P DrainSource Voltage VDS 60 60 60 60 60 , ) Siliconix 2N7000/7002, VQ1000J/P, BS170 Specificationsa for 2N7000 and 2N7002 Limits 2N7000


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PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J P-37993--Rev. BS170 VQ1000J 2N7000 2N7000 7002 2N7002 7002 2n7002 BS170 siliconix VQ1000P
2000 - BS170

Abstract:
Text: BS170 DMOS Transistor (N-Channel) TO-226AA (TO-92) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) Features · · · · · · · High input impedance High-speed switching No minority carrier , of 2mm from case. 2/28/00 BS170 DMOS Transistor (N-Channel) Electrical Characteristics (T , , IF = 0.5 A Tj = 25°C Value 0.5 0.85 Unit A V BS170 DMOS Transistor (N-Channel) Ratings and Characteristic Curves BS170 DMOS Transistor (N-Channel) Ratings and Characteristic Curves BS170 DMOS


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PDF BS170 O-226AA BS170
BS170A

Abstract:
Text: 00PSS17 95D 05517 D 35-25 N-channel enhancem ent mode vertical D M O S FET BS170 FEAT U RES · · · , -resista n ce, lo w ca p a cita n ce and fa st PRO D UCT S U M M A R Y Part No. B S 17 0 P BS170F b v dss , E M I C O N D /DI S C R E T E ~Ì5 d F | ? 5 E D S 3 3 DGD551fl t f 95D 055.18 D j BS170 , DDOSSl1 1 ] 95D 05519 D BS170 - T '3 S '2 5 Fig. 1 Typical saturation , 0005 55 0 4 J ~ D SEM ICOND/D I SCRETE 95D 05520 BS170 T 'S S 'Z S i PLESSEY


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PDF 00PSS17 BS170 BS170F 7E20533 7EEGS33 000S5E3 22DS33 BS170A EI5D
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Abstract:
Text: BS170 DMOS Transistors (N-Channel) T O -92 _FEATURES High input impedance , °C Vf 0.85 V 4 /9 8 G eneral \ ) Sem icon] BS170 _ , CURVES BS170 Output characteristics Admissible power dissipation versus temperature Pulse test , distance of 2 mm from case W 1 0.8 BS170 \ f 17V 0.8 \ 1 D(ON) r 0.6 \ V \ 0» 0.4 \ 5V f v \ 0.2 5 = 25 C > (O II 0.6 BS170 1


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