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LT1528CQ Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#TR Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#TRPBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C

BS170 application note Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - BS170

Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
Text: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N­Channel TO­92 MAXIMUM , Vdc Vpk Drain Current ( Note 1.) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD , BS170 YWW 1 Drain 3 Source 2 Gate Y WW = Year = Work Week ORDERING INFORMATION , : BS170 /D BS170 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic , = 0) Drain­Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) ON CHARACTERISTICS ( Note 2


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PDF BS170 r14525 BS170/D BS170 BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
2004 - BS170

Abstract: BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 bs170 TO-92
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N-Channel TO-92 (TO-226) Features , Current ( Note ) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 mW TJ, Tstg , 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 YWW 1 Drain 3 Source 2 Gate Y WW , Order Number: BS170 /D BS170 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Vdc, VDS = 0) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) ON CHARACTERISTICS ( Note 1


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PDF BS170 O-226) BS170/D BS170 BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 bs170 TO-92
2010 - bs170

Abstract: transistor MOSFET BS170 BS170 application note TRANSISTOR BS170
Text: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description , . BS170 High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and , Maximum Ratings Symbol SOT-23 TA = 25° unless otherwise noted C Parameter BS170 MMBF170 , otherwise noted C Parameter BS170 MMBF170 Units Maximum Power Dissipation Derate above 25 , © 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 mA - 55 to 150 Symbol


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PDF BS170 MMBF170 500mA BS170 transistor MOSFET BS170 BS170 application note TRANSISTOR BS170
2005 - transistor BS170

Abstract: equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 BS170RLRPG BS170G BS170RL1 BS170RLRA BS170RLRAG
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO , Vpk Drain Current ( Note ) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 , reliability may be affected. NOTE : The Power Dissipation of the package may result in a lower continuous drain current. TO-92 (TO-226) CASE 29 STYLE 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G 1 Drain 2 Gate 3 Source BS170 = Device Code A = Assembly Location Y = Year


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PDF BS170 O-226) BS170/D transistor BS170 equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 BS170RLRPG BS170G BS170RL1 BS170RLRA BS170RLRAG
2004 - BS170 application note

Abstract: BS170 bs170 TO-92 pin diagram of bs170 BS170ZL1 BS170RLRP BS170RLRM BS170RLRA BS170RL1 BS170G
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N-Channel TO-92 (TO-226) Features , Current ( Note ) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 mW TJ, Tstg , 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 YWW 1 Drain 3 Source 2 Gate Y WW , Publication Order Number: BS170 /D BS170 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Vdc, VDS = 0) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) ON CHARACTERISTICS ( Note 1


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PDF BS170 O-226) BS170/D BS170 application note BS170 bs170 TO-92 pin diagram of bs170 BS170ZL1 BS170RLRP BS170RLRM BS170RLRA BS170RL1 BS170G
2009 - mosfet bs170

Abstract: equivalent of BS170 EQUIVALENT FOR bs170 BS170 BS170 application note sot23 BS170 bs170 datasheet MMBF170 BS170 DATA SHEET GTO Driver
Text: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor Features General , BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , BS170 MMBF170 Units PD Maximum Power Dissipation Derate above 25°C 830 6.6 300 2.4 , Semiconductor Corporation BS170 / MMBF170 Rev. E1 www.fairchildsemi.com 1 BS170 / MMBF170 - N-Channel , VDS = VGS, ID = 1 mA All 2.1 3 V All 1.2 5 BS170 320 V On


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PDF BS170 MMBF170 500mA mosfet bs170 equivalent of BS170 EQUIVALENT FOR bs170 BS170 application note sot23 BS170 bs170 datasheet MMBF170 BS170 DATA SHEET GTO Driver
1997 - transistor BS170

Abstract: BS170 BS170 PHILIPS Philips RDS business BP317 MBB692 BS170 application note philips bs170
Text: BS170 Note 1. tp = 80 µs; = 0,01. VDD = 50 V handbook, halfpage handbook, halfpage 90 % , DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product , specification N-channel vertical D-MOS transistor BS170 QUICK REFERENCE DATA DESCRIPTION N-channel , MAM146 s Note : Various pin configurations available. Fig.1 Simplified outline and symbol , transistor BS170 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134


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PDF BS170 SC13b SCA54 137107/1200/01/pp8 transistor BS170 BS170 BS170 PHILIPS Philips RDS business BP317 MBB692 BS170 application note philips bs170
2010 - BS170

Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
Text: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description , . BS170 High density cell design for low RDS(ON). Voltage controlled small signal switch , BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , °C unless otherwise noted Parameter BS170 MMBF170 Units Maximum Power Dissipation Derate , °C/W © 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 mA - 55 to 150


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PDF BS170 MMBF170 500mA BS170 BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
BS170 SMD

Abstract: EVB90807 BS170 application note 1N5819 S4 MLX90808 LM2675M-05 PROMI-ESD-02 MLX90807 PGB0010603 MLX90257
Text: GND 3 VBus BS170 GND DGND FDN5618P Application Note Mar/08 Rev Project , (www.melexis.com). Page 1 of 9 Rev 001 Application Note Mar/08 EVB90807 Evaluation board and , .7 Page 2 of 9 Rev 001 Application Note Mar/08 EVB90807 Evaluation board and programmer , Application Note Mar/08 EVB90807 Evaluation board and programmer for integrated pressure sensors , ) J19 J3 - USB J2 - RS232 CON1 Sensor Fig.3. Page 4 of 9 Rev 001 Application Note


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PDF EVB90807 MLX90257 MLX90269 MLX90807 MLX90808 RS232 EVB90807 PROMI-ESD-02 100NF BS170 SMD BS170 application note 1N5819 S4 MLX90808 LM2675M-05 PROMI-ESD-02 MLX90807 PGB0010603 MLX90257
1997 - MOSFET bs170

Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
Text: mA BS170 320 MMBF170 320 ON CHARACTERISTICS ( Note 1) VGS(th) VDS > 2 VDS(on), ID = , MMBF170 10 ns Note : 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. BS170 Rev. C , April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General , Parameter BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate , Fairchild Semiconductor Corporation 150 417 °C/W BS170 Rev. C / MMBF170 Rev. D Electrical


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PDF BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
1997 - BS170 MOTOROLA

Abstract: us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
Text: MOTOROLA Order this document by BS170 /D SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N­Channel - Enhancement 1 DRAIN 2 GATE ® 3 SOURCE MAXIMUM RATINGS 1 , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BS170 RESISTIVE SWITCHING +25 V , Transistors, FETs and Diodes Device Data BS170 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND , ­­­ STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE 3 BS170 Motorola reserves the right to


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PDF BS170/D BS170 226AA) BS170 MOTOROLA us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
1997 - MMBF170

Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
Text: 10 ns Note : 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. BS170 Rev. C / MMBF170 , April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General , Parameter BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate , Fairchild Semiconductor Corporation 150 417 °C/W BS170 Rev. C / MMBF170 Rev. D Electrical , V 5 ON CHARACTERISTICS ( Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA


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PDF BS170 MMBF170 500mA MMBF170 BS170 application note CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
2011 - BS170G

Abstract: BS170 BS170RLRAG mosfet bs170
Text: Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current ( Note , Operating Conditions may affect device reliability. NOTE : The Power Dissipation of the package may result , DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G 1 Drain 2 Gate 3 Source A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ( Note : Microdot may be in either location , . © Semiconductor Components Industries, LLC, 2011 April, 2011 - Rev. 6 1 Publication Order Number: BS170


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PDF BS170G O-226) BS170/D BS170G BS170 BS170RLRAG mosfet bs170
1995 - TO 92 BS170

Abstract: MMBF170 sot23 BS170 BS170 bs170 TO-92 MMBF170 GATE-SOURCE equivalent of BS170 BS170 n-channel MOSFET transistor MOSFET BS170 C1995
Text: BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features , G 11379 ­ 2 TO-92 BS170 TL G 11379 ­ 3 TO-236AB (SOT-23) MMBF170 Absolute Maximum Ratings Symbol Parameter BS170 MMBF170 Units VDSS Drain-Source Voltage 60 V , Printed in U S A BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor August 1992 BS170 Electrical Characteristics (TC e 25 C unless otherwise noted) Symbol Parameter Conditions


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PDF BS170 MMBF170 TO 92 BS170 MMBF170 sot23 BS170 bs170 TO-92 MMBF170 GATE-SOURCE equivalent of BS170 BS170 n-channel MOSFET transistor MOSFET BS170 C1995
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 , Siliconix Siliconix Siliconix 2N7000 2N7002 NDS7002A NDS7002A NDS352AP NDS351AN BS170 NDS355AN , Siliconix Siliconix Siliconix 2N7000 2N7002 MMBF170 2N7000 2N7000 BS170 VN10KM VN10KN3 , BS170 2N7000 BSS123 BS170 NDS0610 BS170 ZVN3302 ZVN3302A ZVN3304A ZVN3306A ZVN3308 5.0 x , BS170 BS170 BS170 BS170 BS170 3.0 x 2.0 mm 4.0 x 2.5 mm MicroFETTM BGAs 2.0 x 2.5 mm


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
BS170 MOTOROLA

Abstract: No abstract text available
Text: . 1997 BS170 RESISTIVE SWITCHING +25 V Figure 1. Switching Test Circuit Figure 2. Switching , BS170 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING , Small-Signal Transistors, FETs and Diodes Device Data 3 BS170 Motorola reserves the right to make , liability arising out of the application or use of any product or circuit, and specifically disclaims any , validated for each customer application by customer's technical experts. Motorola does not convey any


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PDF BS17Q/D BS170/D BS170 MOTOROLA
2009 - PTC D6-14MA

Abstract: No abstract text available
Text: ).6 2.4. APPLICATION CONNECTOR , application . See below for details. LED Indicators: 16 LED Indicators for the DB_IOdrv lines. J1: 10 pins Screw Terminal. It provides the same signals as the application connector. PTC04-DB-HALL02 Rev. 2.1 , D10 BAT48 REL1 AGND REL2 NO VIN N.C. U9 4 1 BS170 /SOT23 +36V COM N.C , 1000uF 4 MAX4656 NO VIN N.C. U3 C4 Q7 BS170 /SOT23 Q4 R21 15 Date: IOdrv


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PDF PTC04-DB-HALL02 PTC04 PTC04-DBHall-02 PTC04) ISO14001 PTC D6-14MA
2011 - Not Available

Abstract: No abstract text available
Text: Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current ( Note ) ID , stresses above the Recommended Operating Conditions may affect device reliability. NOTE : The Power , STYLE 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G 1 Drain 2 Gate 3 Source A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ( Note : Microdot may , 1 Publication Order Number: BS170 /D BS170G ELECTRICAL CHARACTERISTICS (TA = 25°C unless


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PDF BS170G BS170/D
BS170

Abstract: No abstract text available
Text:  BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features_ • High Input Impedance • Fast , Gate-Source-Voltage (pulsed) Vgs ±20 V Drain Current (continuous) Id 300 mA Power Dissipation @Tc = 25°C ( Note 1 , Ambient Air RejA — — 150 K/W Note 1 Forward Transconductance gFs 200 mm VDS = 10V, Id = 0.2A, f = 1 , ambient temperature at a distance of 2.0mm from case. DS21802 Rev. D-3 1of2 BS170 VISHAY /LITEMSI' f , 0.6 0.4 0.2 \ Note s V \ \ \ \ V


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PDF BS170 MIL-STD-202, DS21802 BS170
2009 - 2N7002 MARKING

Abstract: markings 2n7002 2N7002 marking code 72 APPLICATION NOTES VQ1000J/P s4 vishay 2n7002 siliconix VQ1000J MARKING bs170 SILICONIX 2N7002 2N7002
Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY , 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 , 3 Top View BS170 www.vishay.com 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix , Temperature Range BS170 "25 RthJA V "20 0.115 0.225 0.225 0.5 0.13 0.073 , Number: 70226 S-04279-Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix


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PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 18-Jul-08 2N7002 MARKING markings 2n7002 2N7002 marking code 72 APPLICATION NOTES VQ1000J/P s4 vishay 2n7002 siliconix VQ1000J MARKING bs170 SILICONIX 2N7002 2N7002
2011 - Ptc04

Abstract: No abstract text available
Text: ).6 2.4. APPLICATION 2.4.1. The DB15_Female connector ( application connector , application . See below for details. LED Indicators: 8 LED Indicators for the DB_IOdrv lines. J1: 10 pins Screw Terminal. It provides the same signals as the application connector. PTC04-DB-HALL03 Rev. 1.4 , 4 4 REL1 +5V_DIG_CON BYG21M Q3 BS170 /SOT23 Vout_PPS4 R14 15 R13 300


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PDF PTC04-DB-HALL03 PTC04 MLX90288 MLX91206 MLX91207 MLX90291 MLX90292 PTC04-DB-HALL03 PTC04)
MOSFET S170

Abstract: s170 mosfet s170 S-52429 1000J s170 to92
Text: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number 2N7000 2N7002 VQIOOOJ VQIOOOP BS170 60 V(BR)DSS M i n (V ) *t>S(on , Plastic: Sidebraze: VQIOOOJ VQIOOOP BS170 Updates to this data sheet may be obtained v ia facsim ile by , Siliconix S-52429- Rev. E, 28-Apr-97 2N7000/7002, VQIOOOJ/P, BS170 Absolute Maximum Ratings (Ta = 25 , 0.073 0.8 0.2 0.08 625 V Q 1000J 60 ±30 ±20 0.225 0.14 I 1.3 0.52 96 V Q 1000P 60 BS170 60 ±25


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PDF 2N7000/7002, BS170 2N7000 2N7002 BS170 S-52429-- 28-Apr-97 VQ1000J/P, MOSFET S170 s170 mosfet s170 S-52429 1000J s170 to92
2000 - pin diagram of bs170

Abstract: BS170
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast , ) VGS ±20 V Drain Current (continuous) ID 300 mA Power Dissipation @TC = 25°C ( Note , Notes: Note 1 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. DS21802 Rev. D-3 1 of 2 BS170 0.8 ID (ON), DRAIN SOURCE ON CURRENT (A) Pd, POWER DISSIPATION (W) 1 (See Note 1) 0.6 0.4 0.2 1 7V 0.8 VGS = 6V 0.6


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PDF BS170 MIL-STD-202, DS21802 pin diagram of bs170 BS170
equivalent of BS170

Abstract: pin diagram of bs170 BS170
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features · · · · High , mA Power Dissipation @TC = 25°C ( Note 1) Pd 830 mW Junction Temperature Tj 150 , 5.0 9 RJA - - 150 K/W Note 1 Forward Transconductance gFS - 200 , temperature at a distance of 2.0mm from case. DS21802 Rev. D 1 of 2 BS170 1 0.8 ID (ON), DRAIN SOURCE ON CURRENT (A) Pd, POWER DISSIPATION (W) 1 (See Note 1) 0.6 0.4 0.2 7V


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PDF BS170 MIL-STD-202, DS21802 equivalent of BS170 pin diagram of bs170 BS170
pin diagram of bs170

Abstract: bs170 TO-92 TO 92 BS170
Text: TELEDYNE COMPONENTS 3bE D ôc il7bOE 00077^^ 5 TSC T -S 5 -2 .5 WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET FEATURES ABSOLUTE MAXIMUM RATINGS Reliable,low , LogicBuffers , in a , · = , .°-32A BS170 TO , ÔUTbOB 00077^5 7 «TSC N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET T -3 5 -2 5 BS170 , nSec 60 5.0 25 10 10 Crss C oss ton toll NOTE : 1. Puls« tesi 80n Sec, 1% duty cycle


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PDF BS170 pin diagram of bs170 bs170 TO-92 TO 92 BS170
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