The Datasheet Archive

Search Stock (3)

  You can filter table by choosing multiple options from dropdownShowing 3 results of 3
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BS107ARL1 ON Semiconductor Chip One Exchange - -
BS107ARL1G ON Semiconductor Allied Electronics & Automation 0 $0.19 $0.14
BS107ARL1G ON Semiconductor Chip One Exchange - -

No Results Found

BS107A datasheet (30)

Part Manufacturer Description Type PDF
BS107A Motorola TMOS Switching(N-Channel-Enhancement) Original PDF
BS107A On Semiconductor TRANS MOSFET N-CH 200V 0.25A 3TO-92 BOX Original PDF
BS107A On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
BS107A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
BS107A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
BS107A Motorola European Master Selection Guide 1986 Scan PDF
BS107A Motorola Switchmode Datasheet Scan PDF
BS107A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BS107A Others FET Data Book Scan PDF
BS107A Others Shortform Datasheet & Cross References Data Scan PDF
BS107A On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, N Channel, .25A, 200V, Pkg Style TO92 Scan PDF
BS107AG On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
BS107AG On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 1000 Original PDF
BS107AMO Philips Semiconductors Transistor Mosfet N-CH 200V 0.15A 3TO-92 AMMOPACK Original PDF
BS107AMO Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BS107ARL On Semiconductor BS107 - TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal Original PDF
BS107ARL1 On Semiconductor Small Signal MOSFET 250 mA, 200 V N-Channel TO-92 Original PDF
BS107ARL1 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 Original PDF
BS107ARL1G On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 Original PDF
BS107ARL1G On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF

BS107A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - BS107

Abstract:
Text: ) 2000/Ammo Pack BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http , VOLTS RDS(on) = 14 W (BS107) RDS(on) = 6.4 W ( BS107A ) Rating Drain-Source Voltage Gate-Source , YWWG G 3 xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = , Shipping TO-92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO


Original
PDF BS107, BS107A BS107) BS107A) BS107/D BS107 PPAP MANUAL BS107A BS107AG BS107ARL1 BS107ARL1G BS107G
2000 - BS107

Abstract:
Text: Units/Box BS107ARLRM TO­92 2000 Ammo Pack BS107ARLRP TO­92 2000 Ammo Pack BS107ARL1 , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N­Channel TO , (on) = 6.4 ( BS107A ) N­Channel D G 1. The Power Dissipation of the package may result in a , , 2000 November, 2000 ­ Rev. 2 1 Publication Order Number: BS107/D BS107, BS107A , ) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) OFF CHARACTERISTICS Gate Reverse


Original
PDF BS107, BS107A BS107) BS107A) r14525 BS107/D BS107 BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
2007 - BS107

Abstract:
Text: BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our Pb-Free strategy and , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) = 14 W (BS107) RDS(on) = 6.4 W ( BS107A ) Rating Drain-Source Voltage Gate-Source Voltage - , xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package , -92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO-92 1000 Units/Box


Original
PDF BS107, BS107A BS107) BS107A) BS107/D BS107 BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92
1997 - BP317

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS , Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107A , vertical D-MOS transistor BS107A RATINGS Limiting values in accordance with the Absolute Maximum , transistor BS107A CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown , handbook, halfpage BS107A handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID


Original
PDF BS107A SC13b SCA54 137107/00/01/pp8 BP317 BS107A MBB692
2004 - BC107 to92

Abstract:
Text: ORDERING INFORMATION Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , (on) = 6.4 W ( BS107A ) N-Channel Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 , Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID =


Original
PDF BS107, BS107A BS107) BS107A) BS107 BS107G BS107RLRA BS107RL1 BC107 to92 BC107 characteristic BC107 to-92
2014 - Not Available

Abstract:
Text: BS107A Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92 Features • AEC−Q101 , ˆ’92 CASE 29−11 STYLE 30 3 A BS107A YWW G G A = Assembly Location Y = Year WW = Work , Device BS107ARL1G Package Shipping TO−92 (Pb−Free) 2000 / Tape & Reel †For , − Rev. 7 1 Publication Order Number: BS107/D BS107A ELECTRICAL CHARACTERISTICS (TA = , 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) − − − â


Original
PDF BS107A BS107/D
2011 - Not Available

Abstract:
Text: BS107A Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http , WW G A BS107A YWW G G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BS107ARL1G Package , Publication Order Number: BS107/D BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID =


Original
PDF BS107A BS107/D
1997 - BS107 MOTOROLA

Abstract:
Text: N­Channel - Enhancement BS107 BS107A 1 DRAIN 2 GATE ® 3 SOURCE MAXIMUM RATINGS Rating , BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 , Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BS107 BS107A RESISTIVE , Characteristic Motorola Small­Signal Transistors, FETs and Diodes Device Data BS107 BS107A ID(on), DRAIN , Motorola Small­Signal Transistors, FETs and Diodes Device Data 3 BS107 BS107A PACKAGE DIMENSIONS


Original
PDF BS107/D BS107 BS107A 226AA) BS107 MOTOROLA BS107A BS107
BS107A

Abstract:
Text:  BS107A A_ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. Features • Direct , 1988 411 1^53^31 0(]3b000 2b3 This Material Copyrighted By Its Respective Manufacturer BS107A , Copyrighted By Its Respective Manufacturer N-channel enhancement mode vertical D-MOS transistor BS107A 7J~L


OCR Scan
PDF BS107A C03b0ai 7ZSS773 003b005 BS107A
2004 - BS107

Abstract:
Text: / Box BS107ARLRM TO-92 2000 Ammo Pack BS107ARLRP TO-92 2000 Ammo Pack BS107ARL1 TO-92 BS107AG BS107ARL1G 2000 / Tape & Reel TO-92 (Pb-Free) For information on tape , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) RDS(on) = 6.4 W ( BS107A ) N-Channel MAXIMUM RATINGS Rating Drain -Source Voltage Gate-Source , 1 Publication Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25


Original
PDF BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
2004 - BC107 characteristic

Abstract:
Text: Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 BS107ARL1G Package , BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) RDS(on) = 6.4 W ( BS107A ) N-Channel Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 , Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID =


Original
PDF BS107, BS107A BS107) BS107A) BS107/D BC107 characteristic BC107 to92 BC107 to-92 BS107
2011 - BS107

Abstract:
Text: BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com , 2 TO-92 CASE 29-11 STYLE 30 3 A Y WW G A BS107A YWW G G = Assembly Location , INFORMATION Device BS107ARL1G Package Shipping TO-92 (Pb-Free) 2000 / Tape & Reel For , Rev. 6 1 Publication Order Number: BS107/D BS107A ELECTRICAL CHARACTERISTICS (TA = 25 , Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID =


Original
PDF BS107A BS107/D BS107 BS107A BS107ARL1G
TRANSISTOR SL 100

Abstract:
Text: BS107A max. max. max. max. typ. max. min. typ. 200 V 20 V 250 mA 0.6 W 4.5 Q 2 6.4 £ 200 mS 350 mS , BS107A max. max. max. max. max. 200 V 250 mA 500 mA 0.6 W CM o > Id Id m P.crt T stg , transistor BS107A Fig.3 Input and output waveforms. April 1995 69


OCR Scan
PDF BS107A TRANSISTOR SL 100 bs107a
Not Available

Abstract:
Text: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers. Features â , BS107A J V RATINGS Lim iting values in accordance w ith the Absolute Maximum System (I EC 134 , April 1995 BS107A N-channel enhancement mode vertical O-MOS transistor J Fig.2 Switching


OCR Scan
PDF BS107A
Not Available

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Symbol Value Unit Vd S 200 Vdc Vg s , ) (Vq s = 10 Vdc, Ip = 200 mAdc) BS107A (Vq s = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on , ?5 S S OO'iBb?!* Motorola S m all-S ignal Transistors, FETs and Diodes Device Data BS107 BS107A , BS107A V o s , DRAIN-SO URC E VOLTAGE (VOLTS) Figure 7. Saturation Characteristic t>3b?2S5


OCR Scan
PDF BS107 BS107A O-226AA) BS107
Not Available

Abstract:
Text: BS107A J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers , are available. December 1988 0D3b000 2b3 BS107A y v RATINGS Limiting values in accordance , ITT BS107A N-channel enhancement mode vertical D-MOS transistor 7 V Fig.2 Switching times


OCR Scan
PDF BS107A bb53131 003b0ai 003b003
BS107 MOTOROLA

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TM OS Switching N-Channel - Enhancement 1 DRAIN BS107 BS107A 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp < 50 us) Drain Current Continuous , Resistance BS107 (VGS = 2.6 Vdc, Id = 20 mAdc) ( V q s = 10 Vdc, lD = 200 mAdc) BS107A (Vq s = 10 Vdc) (Iq = , -© Motorola, Inc. 1997 ( M ) MOTOROLA ^ - BS107 BS107A RESISTIVE SWITCHING +25 V O


OCR Scan
PDF BS107/D BS107 BS107A BS107 MOTOROLA BS107A
Not Available

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -Channel - Enhancement 1 DRAIN BS107 BS107A G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating D r a in - S o u r c e V olta g e G a t e -S o u r c e V oltag e - C o n tin u o u s - N o n -re p e titiv e (tp < 50 jxs) D rain , Device Data BS107 BS107A RESISTIVE SWITCHING +25 V TO SAM PLIN G S C O P E S23 PU LS E GEN , , FETs and Diodes Device Data 4-9 BS107 BS107A V o s , D R A IN -S O U R C E V O LT A G E


OCR Scan
PDF BS107 BS107A
lt 2904

Abstract:
Text: TMOS SWITCHING N-CHANNEL - ENHANCEM ENT BS107A Is a M otorola designated preferred device. (1) T , ) (V q s = 10 V, lD = 200 mA} BS107A {VGS = 10 Vdc) { I D = 100 mA) (I d = 250 mA) SMALL-SIGNAL


OCR Scan
PDF BS107 O-226AA) BS107A lt 2904 BS107 MOTOROLA
Not Available

Abstract:
Text: BS107A _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers. Features · Direct interface to C-MOS, T T L , etc. · High-speed switching · No second breakdown Q UICK REFERENCE D A T A Drain-source


OCR Scan
PDF BS107A
motorola l6 lcd

Abstract:
Text: BS107 (V q s = 2.6 Vdc, I q = 20 mAdc) ( V q s = 10 Vdc, I q = 200 mAdc) BS107A (V q s = 10 Vdc) ( I q = , 2.0%. REV 1 (M ) M O T O R O L A © Motorola, Inc. 1997 · .W ü li" " B S107 BS107A , Motorola Small-Signal Transistors, FETs and Diodes Device Data BS107 BS107A 1.0 2.0 3.0 4.0 , Small-Signal Transistors, FETs and Diodes Device Data 3 BS107 BS107A PACKAGE DIMENSIONS NOTES: 1


OCR Scan
PDF BS107/D 100jiA DS700101-page A0cn0NH03± motorola l6 lcd AY0438 BS107 MOTOROLA AY0438/P001
Not Available

Abstract:
Text: BS107A Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.125 V(GS)th Max. (V)3.0 V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)1m I(DSS) Max. (A)30n @V(DS) (V


Original
PDF BS107A
MPF89

Abstract:
Text: Case 29-04 - TO-226AA (TO-92) - N-Channel VN0300L 2N7000 BS170 VN0610LL VN1706L VN2406L BSS89 BS107A


OCR Scan
PDF O-226AE MPF930 MPF960 MPF6659 MPF990 MPF6660 MPF6661 MPF910 VN10LM MPF89 BSS89 "cross reference" VN2410L "cross reference" VN0300L "cross reference" VN10LM "cross reference" MPF960 "cross reference" MPF6661 "cross reference" Mosfet 2n7000 BSS89
2004 - NTP13N10

Abstract:
Text: ON Semiconductor Selector Guide - Power MOSFET Products MOSFET - Through-Hole RDS(on) Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* Max Rating ID (A) PD (W) Device Config. Page No. TO-92 - Case 29-11 N-Channel 7.5 60 5.0 5.0 14 200 6.0 240 10 10 28 10* 6.0 0.15 0.2 0.5 0.25 0.25 0.25 0.2 0.4 0.35 0.35 0.35 0.35 0.35 0.35 VN2222LL 2N7000 BS170 BS107 BS108 BS107A VN2410L S S S S S S S 1095 26 40 34 38 34 1100 TO-220AB - Case 221A (See


Original
PDF VN2222LL 2N7000 BS170 BS107 BS108 BS107A VN2410L O-220AB NTP125N02R NTP90N02 NTP13N10 S1095
2106a

Abstract:
Text: CROSS R EF ER E N C E LIST Industry Part No. 2N 6659 2N 6660 2N6661 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 BS107 BS107A BS108 BS170 BS250 BSR64 BSR65 BSR66 BSR67 BSR70 BSR72 BSR76 BSR78 BSS84 BSS87 BSS88 BSS89 BSS91 BSS92 BSS100 BSS101 BSS110 BSS123 BSS138 BST70A BST72A BST74A BST76A BST80 BST82 BST84 BST86 BST90 BST97 BST100 BST110 BST120 D80AK1 D80AK2 Zetex Suggested Replacem ent ZVN2106B ZVN2106B ZVN2110B 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107P ZVNL120A


OCR Scan
PDF 2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS ZVN3306A ZVN2106A vn1720m 0545N2 MPF910 vp0109n2 2N7019 zetex zvp2120a
Supplyframe Tracking Pixel