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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
BS107P Diodes Incorporated Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
BBS-107-G-C Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT
BBS-107-G-D Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT
BBS-107-G-G Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT
BBS-107-T-B Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT
BBS-107-T-C Samtec Inc Board Connector, 7 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT
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  You can filter table by choosing multiple options from dropdownShowing 44 results of 71
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BBS-107-G-A Samtec Inc Samtec 74 $1.81 $1.14
BBS-107-G-A Samtec Inc Avnet - $2.29 $1.79
BBS-107-G-B Samtec Inc Farnell element14 - £3.38 £1.36
BBS-107-G-B Samtec Inc Newark element14 100 $3.34 $1.56
BBS-107-G-B Samtec Inc Avnet - $2.59 $1.99
BBS-107-G-B Samtec Inc Samtec 74 $2.03 $1.28
BBS-107-G-C Samtec Inc Samtec - $2.41 $1.52
BBS-107-G-D Samtec Inc Samtec - $2.86 $1.80
BBS-107-G-G Samtec Inc Farnell element14 - £4.65 £2.37
BBS-107-G-G Samtec Inc Avnet - $3.99 $3.09
BBS-107-G-G Samtec Inc Samtec - $3.16 $1.99
BBS-107-T-A Samtec Inc Samtec 74 $0.74 $0.47
BBS-107-T-B Samtec Inc Farnell element14 - £1.98 £0.62
BBS-107-T-B Samtec Inc Avnet - $2.11 $0.54
BBS-107-T-B Samtec Inc Chip1Stop 64 $1.75 $1.73
BS107 Infineon Technologies AG Rochester Electronics 48 - -
BS107 Vishay Siliconix Bristol Electronics 302 - -
BS107ARL1G ON Semiconductor Allied Electronics & Automation - $0.19 $0.14
BS107P Diodes Incorporated Avnet - $0.34 $0.29
BS107P Diodes Incorporated Future Electronics 10,803 $0.88 $0.56
BS107P Diodes Incorporated Chip1Stop 608 $0.38 $0.29
BS107P Diodes Incorporated TME Electronic Components 97 $0.66 $0.37
BS107P Diodes Incorporated New Advantage Corporation 6,915 $1.75 $1.35
BS107P Zetex / Diodes Inc ComS.I.T. 8,365 - -
BS107PSTZ Diodes Incorporated Avnet - $0.29 $0.24
BS107PSTZ Diodes Incorporated Chip1Stop 4,000 $0.41 $0.41
BS107PSTZ Diodes Incorporated Future Electronics - $0.26 $0.26
IPBS-107-01-T-S Samtec Inc Master Electronics 266 $1.88 $1.05
MBS107 Box Enclosures & Assembly Services Farnell element14 25 £31.95 £30.24
MBS107 Box Enclosures & Assembly Services Newark element14 25 $36.07 $24.59
MBS107 Box Enclosures & Assembly Services element14 Asia-Pacific 25 $28.94 $28.94
PBS107 Box Enclosures & Assembly Services Farnell element14 46 £13.23 £10.86
PBS107 Box Enclosures & Assembly Services Newark element14 46 $14.94 $10.17
PBS107 Box Enclosures & Assembly Services element14 Asia-Pacific 46 $13.83 $13.83
TBS1072B Tektronix Inc Allied Electronics & Automation 8 $840.00 $840.00
TBS1072B Tektronix Inc element14 Asia-Pacific 43 $994.77 $994.77
TBS1072B Tektronix Inc RS Components 10 £378.00 £378.00
TBS1072B Tektronix Inc Newark element14 11 $840.00 $840.00
TBS1072B CAL Tektronix Inc Newark element14 11 $1151.67 $1151.67
TBS1072B CAL D Tektronix Inc Newark element14 11 $1190.00 $1190.00
TBS1072B-EDU Tektronix Inc Allied Electronics & Automation 18 $790.00 $790.00
TBS1072B-EDU Tektronix Inc element14 Asia-Pacific 19 $883.27 $883.27
TBS1072B-EDU Tektronix Inc RS Components 16 £378.00 £378.00
TBS1072B-EDU ENCORE Tektronix Inc Farnell element14 5 £494.00 £494.00

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BS107 datasheet (97)

Part Manufacturer Description Type PDF
BS107 Diodes N-CHANNEL ENHANCEMENT MODE TRANSISTOR Original PDF
BS107 Infineon Technologies TRANS MOSFET N-CH 200V 0.13A 3TO-92 Original PDF
BS107 Motorola TMOS Switching(N-Channel-Enhancement) Original PDF
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
BS107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
BS107 Philips Semiconductors UHF power transistor Original PDF
BS107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
BS107 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
BS107 Siemens Original PDF
BS107 Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
BS107 Temic Semiconductors N-channel Enhancement-mode Mos Transistors Original PDF
BS107 Toshiba Power MOSFETs Cross Reference Guide Original PDF
BS107 Vishay Telefunken TRANS MOSFET N-CH 200V 0.12A 3TO-92-18RM Original PDF
BS107 ITT Semiconductors VMOS Transistor Scan PDF
BS107 Motorola European Master Selection Guide 1986 Scan PDF
BS107 Motorola Switchmode Datasheet Scan PDF
BS107 Others Semiconductor Master Cross Reference Guide Scan PDF

BS107 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - BS107

Abstract: PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
Text: ) 2000/Ammo Pack BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our , BS107 , BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http , VOLTS RDS(on) = 14 W ( BS107 ) RDS(on) = 6.4 W ( BS107A ) Rating Drain-Source Voltage Gate-Source , YWWG G 3 xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = , Shipping TO-92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO


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PDF BS107, BS107A BS107) BS107A) BS107/D BS107 PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
2007 - BS107

Abstract: BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92
Text: BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our Pb-Free strategy and , BS107 , BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , ) = 14 W ( BS107 ) RDS(on) = 6.4 W ( BS107A ) Rating Drain-Source Voltage Gate-Source Voltage - , xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package , -92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO-92 1000 Units/Box


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PDF BS107, BS107A BS107) BS107A) BS107/D BS107 BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92
1995 - TO-92-18RM

Abstract: BS107 VN2010L TO-92-18R
Text: VN2010L/ BS107 Siliconix NChannel EnhancementMode MOS Transistors Product Summary Part Number V(BR)DSS Min (V) VN2010L rDS(on) Max (W) BS107 ID (A) 10 @ VGS = 4.5 V 0.8 to , View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 DrainSource Voltage VDS 200 200 GateSource Voltage VGS , junction temperature. P-38283-Rev. B (08/15/94) 1 VN2010L/ BS107 Siliconix Specificationsa


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PDF VN2010L/BS107 VN2010L BS107 O226AA) P-38283--Rev. TO-92-18RM BS107 VN2010L TO-92-18R
1997 - equivalent of BS107

Abstract: BS107 application BS107 vn2010l
Text: VN2010L/ BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V(BR)DSS Min (V) ID (A) 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 200 BS107 VGS(th) (V) 10 @ VGS , Top View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS , -Aug-94 1 VN2010L/ BS107 Specificationsa Limits VN2010L Parameter Symbol Test Conditions


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PDF VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 equivalent of BS107 BS107 application BS107 vn2010l
Not Available

Abstract: No abstract text available
Text: Temic siiicon ix_VN2010L/ BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Mín (V) r DS(on) Max (Q) VGS(th) (V , -18 L e a d F orm ) Top View V N 2010L Top View BS107 Absolute Maximum Ratings (Ta = 25 , . 8 0.8 0.32 156 - 5 5 to 150 BS107 200 Unit V ±25 0.12 A lffCE 0.5 W 250 ° c /w °c , -38283- Rev. B (08/15/94) 1 Tem ic VN2010L/ BS107 Specifications3 Limits V N 2010L Siliconix


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PDF VN2010L/BS107 VN2010L BS107 Su5/94) O-226AA) P-38283--
1999 - VN2010L

Abstract: BS107
Text: VN2010L/ BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) ID (A) 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 200 BS107 VGS(th) (V) 10 @ , Top View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS , -Aug-94 1 VN2010L/ BS107 Specificationsa Limits VN2010L Parameter Symbol Test Conditions


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PDF VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 VN2010L BS107
2000 - BS107

Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
Text: BS107RLRA TO­92 2000 Tape & Reel BS107RL1 TO­92 2000 Tape & Reel BS107A TO­92 1000 Units/Box BS107ARLRM TO­92 2000 Ammo Pack BS107ARLRP TO­92 2000 Ammo Pack BS107ARL1 , BS107 , BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N­Channel TO , , 2000 November, 2000 ­ Rev. 2 1 Publication Order Number: BS107 /D BS107 , BS107A , . Switching Test Circuit http://onsemi.com 2 BS107 , BS107A 200 180 VGS = 0 V 160 5.0 VGS


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PDF BS107, BS107A BS107) BS107A) r14525 BS107/D BS107 BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
1997 - BS107

Abstract: MBB692 transistor bs107
Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS , PIN BS107 Fig.1 Simplified outline and symbol. 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 LIMITING VALUES In , transistor BS107 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , handbook, halfpage BS107 handbook, halfpage 90 % INPUT 10 % 90 % 10 V OUTPUT ID


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PDF BS107 SC13b SCA54 137107/00/01/pp12 BS107 MBB692 transistor bs107
VN2010L

Abstract: S0427 siliconix marking code BS107
Text: VN2010L/ BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 28 @ V gs = 2.8 V 0.8 to 3 0.12 V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) 10 @ V , VN2010L Top View BS107 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter , 200 ±30 0.19 0.12 0.8 0.8 0.32 156 - 5 5 to 150 BS107 200 Unit V ±25 0.12 A dm 0.5 W 250 °C/W °C Tj' Ts tg 11-84 VN2010L/ BS107 Vishay Siliconix SPECIFICATIONS (T a - 25


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PDF VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM S-04279-- 16-Jul-01 O-226AA) S-0427 S0427 siliconix marking code
2004 - BC107 to92

Abstract: BC107 characteristic bs107 BC107 to-92
Text: , DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Saturation Characteristic http://onsemi.com 36 BS107 , BS107A ORDERING INFORMATION Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 , BS107 , BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , Order Number: BS107 /D BS107 , BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ://onsemi.com 35 BS107 , BS107A 10 VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 5.0 2.0 1.0 0.5 0.2 0.1 -55 -35 -15


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PDF BS107, BS107A BS107) BS107A) BS107 BS107G BS107RLRA BS107RL1 BC107 to92 BC107 characteristic BC107 to-92
ha1100

Abstract: UG-94 bs107
Text: Temic S e m i c o n d u c t o r s VN2010L/ BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V N2010L 200 BS107 28 @ V o s = 2.8 V 0.8 to 3 0.12 V(BR)DSS Min (V , Form) Top View VN2U10L Top View BS107 Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise , VGS VN2Ö10L 200 ±30 0.19 0.12 0.8 0.8 0.32 156 -5 5 to 150 BS107 200 Unit V ±25 0.12 A , VN2010L/ BS107 Specifications3 Temic S e m i c o n d u c t o r s Limits VN2010L BS107 Parameter


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PDF VN2010L/BS107 N2010L BS107 O-226AA) ug-94 ha1100 UG-94
2005 - Not Available

Abstract: No abstract text available
Text: VN2010L/ BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V , G 2 G 2 D 3 S 3 Top View VN2010L Top View BS107 ABSOLUTE MAXIMUM , to 150 BS107 200 "25 0.12 Unit V A 0.5 W 250 _C/W _C 11-1 VN2010L/ BS107 Vishay , 100 A 220 1.2 200 0.8 1.8 "10 "10 1 0.03 mA nA 200 0.8 3 V BS107 Min Max Unit Symbol Test


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PDF VN2010L/BS107 VN2010L BS107 O-226AA 08-Apr-05
1997 - MAM146

Abstract: BP317 BS107 bs107 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS , PIN BS107 Fig.1 Simplified outline and symbol. 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 LIMITING VALUES In , transistor BS107 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107 Fig


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PDF BS107 SC13b SCA54 137107/00/01/pp12 MAM146 BP317 BS107 bs107 philips
BS107

Abstract: VN2010L
Text: VN2010L/ BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) ID (A) 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 200 BS107 VGS(th) (V) 10 @ , Top View VN2010L BS107 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS , -Aug-94 1 VN2010L/ BS107 Specificationsa Limits VN2010L Parameter Symbol Test Conditions


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PDF VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 BS107 VN2010L
bs107 transistor

Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Text: BS107 N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS , BS107 D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , D-MOS transistor BS107 I r 10 V 1-] 0 J L 0 . (j5 >1 'D 5012 RT 8 V 7ZM773.1 Fig.2 Switching , N-channel enhancement mode vertical D-MOS transistor BS107 "DS (on) in) imi 1 VGS = 3 V , Preliminary specification N -channel enhancement mode vertical BS107 D-MOS transistor UCB700 Tomb C°C


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PDF BS107 MBB073 UCB700 bs107 transistor cr 406 transistor BS107 UCB700 transistor 406 specification
2008 - equivalent of BS107

Abstract: BS107 VN2010L BS107 application
Text: VN2010L/ BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number , 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low , Top View Top View VN2010L Device Marking Front View BS107 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VN2010L BS107 Drain-Source Voltage , Number: 70215 S-04279-Rev. C, 16-Jul-01 www.vishay.com 11-1 VN2010L/ BS107 Vishay Siliconix


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PDF VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM 18-Jul-08 equivalent of BS107 BS107 VN2010L BS107 application
2004 - BS107

Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
Text: BS107RL1 TO-92 2000 / Tape & Reel BS107A TO-92 BS107G TO-92 (Pb-Free) 1000 Units / Box BS107ARLRM TO-92 2000 Ammo Pack BS107ARLRP TO-92 2000 Ammo Pack BS107ARL1 , BS107 , BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , 1 Publication Order Number: BS107 /D BS107 , BS107A ELECTRICAL CHARACTERISTICS (TA = 25 , Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID =


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PDF BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
2004 - BC107 characteristic

Abstract: BC107 to92 BS107 BC107 to-92
Text: ) Figure 7. Saturation Characteristic http://onsemi.com 3 BS107 , BS107A ORDERING INFORMATION Device BS107 BS107G BS107RLRA BS107RL1 BS107A BS107AG BS107ARLRM BS107ARLRP BS107ARL1 BS107ARL1G Package , BS107 , BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO , Order Number: BS107 /D BS107 , BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , BS107 , BS107A 10 VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 200 180 5.0 2.0 1.0 100 mA 250 mA C, CAPACITANCE


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PDF BS107, BS107A BS107) BS107A) BS107/D BC107 characteristic BC107 to92 BS107 BC107 to-92
Not Available

Abstract: No abstract text available
Text: transistor BS107 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc â , BS107 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). PARAMETER SYMBOL , N-channel enhancement mode vertical D-MOS transistor BS107 CHARACTERISTICS Tj = 25 °C unless , specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor BS107 Fig , transistor 1 10 100 BS107 1000 ID (mA) Vd s Fig.6 Typical on-resistance as a function


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PDF BS107 CB700
BS-107C

Abstract: No abstract text available
Text: Tem ic Siliconix VN2010L/ BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR,)DSS Min (V) 200 rDS(on) Max (Ö) 10 @ VGS = 4.5 V 28 @ V GS = 2.8 V , -92-18RM (TO-18 Lead Form) Tbp View VN2010L Top View BS107 Absolute Maximum Ratings (Ta = 25°C Unless , junction temperature. P-38283-Rev. B (08/15/94) 1 1 -6 7 L ow Power MOS Tem ic VN2010L/ BS107 , Drain Current® iD(on) Siliconix BS107 M in M ax U n it Sym bol T e st C o n d itio n s


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PDF VN2010L/BS107 VN2010L BS107 P-38283--Rev. O-226AA) BS-107C
s3331

Abstract: No abstract text available
Text: Philips Components BS107 Data sheet status Preliminary specification date of issue , vertical D-MOS transistor BS107 LIMITING VALUES In accordance with the Absolute Maximum System (IEC , Preliminary specification N-channel enhancement mode vertical D-MOS transistor BS107 CHARACTERISTICS , specification Philips Components N-channel enhancement mode vertical D-MOS transistor BS107 Fig , specification N-channel enhancement mode vertical D-MOS transistor BS107 UCB712 2.8 k 2.4 2


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PDF BS107 yP1031 s3331
2001 - BS107

Abstract: 55C24 VN2010L
Text: VN2010L/ BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number , 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low , Top View Top View VN2010L Device Marking Front View BS107 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VN2010L BS107 Drain-Source Voltage , Number: 70215 S-04279-Rev. C, 16-Jul-01 www.vishay.com 11-1 VN2010L/ BS107 Vishay Siliconix


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PDF VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM O-226AA) S-04279--Rev. 16-Jul-01 BS107 55C24 VN2010L
BS107A

Abstract: BS107 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107 /D TM OS Switching N-Channel - Enhancement 1 DRAIN BS107 BS107A 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit , Resistance BS107 (VGS = 2.6 Vdc, Id = 20 mAdc) ( V q s = 10 Vdc, lD = 200 mAdc) BS107A (Vq s = 10 Vdc) (Iq = , -© Motorola, Inc. 1997 ( M ) MOTOROLA ^ - BS107 BS107A RESISTIVE SWITCHING +25 V O , 0 BS107 /D


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PDF BS107/D BS107 BS107A BS107A BS107 MOTOROLA
1997 - BS107 MOTOROLA

Abstract: BS107A BS107
Text: N­Channel - Enhancement BS107 BS107A 1 DRAIN 2 GATE ® 3 SOURCE MAXIMUM RATINGS Rating , BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 , Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BS107 BS107A RESISTIVE , Characteristic Motorola Small­Signal Transistors, FETs and Diodes Device Data BS107 BS107A ID(on), DRAIN , Motorola Small­Signal Transistors, FETs and Diodes Device Data 3 BS107 BS107A PACKAGE DIMENSIONS


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PDF BS107/D BS107 BS107A 226AA) BS107 MOTOROLA BS107A BS107
lt 2904

Abstract: BS107 MOTOROLA
Text: BS107 ,A* CASE 29-04, STYLE 30 TO-92 (TO-226AA) M A X I M U M R A T IN G S Rating Drain-Source , TMOS SWITCHING N-CHANNEL - ENHANCEM ENT BS107A Is a M otorola designated preferred device. (1) T , Voltage (Iq = 1.0 mA, V q s = V GS) Static Drain-Source On Resistance BS107 (V q s = 2.6 V. I q = 20 mA) (V q s = 10 V, lD = 200 mA} BS107A {VGS = 10 Vdc) { I D = 100 mA) (I d = 250 mA) SMALL-SIGNAL , Small-Signal Transistors, FETs and Diodes Device Data BS107 ,A 1.0 2.0 3.0 4.0 5.0 Vos. M


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PDF BS107 O-226AA) BS107A lt 2904 BS107 MOTOROLA
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