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SSOP32-R1

Abstract: NJU26040 NJU26040-09A NJU26040-09B NJU26040V NJU3555 SSOP32 subwoofer_trim_cmd
Text: NJU26040- 09B NJU26040-09A SRS WOW HD NJU26040- 09B SRS WOW HD 24 NJU26040- 09B , /100kbps, Fast-mode/400kbps) 4 NJU26040 . Ver. 2008-02-17 -1- NJU26040- 09B DSP AD1 , NJU26040- 09B Ver. 2008-02-17 Input Trimmer Master Channel Trimmer NJU26040- 09B NJU26040 , WOW HD Bypass Trimmer NJU26040- 09B Input Trimmer .2-2 L/R SDO0 WOW HD Bypass mode , Limiter NJU26040- 09B Bass Management (L/R) Limiter Headroom Gain WOW HD Input Trimmer L


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PDF NJU26040-09B NJU26040-09A NJU26040-09B NJU26040V 38MHz SSOP32-R1 standard-mode/100kbps, Fast-mode/400kbps) NJU26040 SSOP32-R1 NJU26040 NJU26040-09A NJU26040V NJU3555 SSOP32 subwoofer_trim_cmd
1999 - esjc13-12b

Abstract: No abstract text available
Text: Mark Type ESJA13- 09B Mark Applications Rectification for Microwave oven high voltage power supply , ESJC13 - 09B -12B 12 350 100 30 130 -40 to +130 Units Repetitive Peak Reverse Voltage Average , Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJC13 - 09B Maximum Forward , =100 o C ESJC13-12B ESJC13- 09B 300 Tj=100 o C Tj=25 o C IF 200 ESJC13-12B IR 0.1 [mA] 100 [ µ A] ESJC13- 09B ESJC13- 09B 0.01 Tj=25 o ESJC13-12B C 0 0


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PDF ESJC13 ESJC13 9kV/450mA 12kV/350mA CSS-66325-F 25-4M UL94V-0 ESJA13-09B ESJC13-09B 20pcs. esjc13-12b
1999 - HIGH VOLTAGE DIODE 12kv 350ma

Abstract: 12KV ESJC13-09B
Text: Mark Type ESJA13- 09B Mark Applications Rectification for Microwave oven high voltage power supply , ESJC13 - 09B -12B 12 350 100 30 130 -40 to +130 Units Repetitive Peak Reverse Voltage Average , Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJC13 - 09B Maximum Forward , =100 o C ESJC13-12B ESJC13- 09B 300 Tj=100 o C Tj=25 o C IF 200 ESJC13-12B IR 0.1 [mA] 100 [ µ A] ESJC13- 09B ESJC13- 09B 0.01 Tj=25 o ESJC13-12B C 0 0


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PDF ESJC13 ESJC13 9kV/450mA 12kV/350mA CSS-66325-F 25-4M UL94V-0 ESJA13-09B ESJC13-09B 20pcs. HIGH VOLTAGE DIODE 12kv 350ma 12KV ESJC13-09B
1999 - ESJC13-12B

Abstract: ESJC13 HIGH VOLTAGE DIODE for microwave ovens 12kv HIGH VOLTAGE DIODE for microwave ovens 12KV HIGH VOLTAGE DIODE 12kv 66325 ESJC13 HIGH VOLTAGE DIODE 12kv 350ma 125-4M CSS-66325-F
Text: power supply Mark ESJA13- 09B ESJA13-12B Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Conditions ESJC13 Units - 09B Repetitive Peak Reverse , Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJC13 - 09B Maximum , /450mA,12kV/350mA ) Characteristics 1 400 Tj=100 o C ESJC13-12B ESJC13- 09B Tj=100 300 o Tj=25 C o C IR IF 0.1 ESJC13-12B 200 [mA] [ µ A] ESJC13- 09B


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PDF ESJC13 9kV/450mA 12kV/350mA ESJC13 CSS-66325-F 25-4M UL94Veverse ESJC13-09B 20pcs. 100pcs ESJC13-12B ESJC13 HIGH VOLTAGE DIODE for microwave ovens 12kv HIGH VOLTAGE DIODE for microwave ovens 12KV HIGH VOLTAGE DIODE 12kv 66325 HIGH VOLTAGE DIODE 12kv 350ma 125-4M CSS-66325-F
1999 - HIGH VOLTAGE DIODE 12kv

Abstract: ESJC13-12B ESJC13 12KV ESJC13-09B HIGH VOLTAGE DIODE 12kv 350ma
Text: Microwave oven high voltage power supply Mark ESJA13- 09B ESJA13-12B Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Conditions ESJC13 Units - 09B Repetitive , Conditions ESJC13 - 09B Maximum Forward Voltage Drop VF IF=350mA Maximum Reverse Current IR , =100 o C ESJC13-12B ESJC13- 09B Tj=100 300 o Tj=25 C o C IR IF 0.1 ESJC13-12B 200 [mA] [ µ A] ESJC13- 09B ESJC13- 09B 100 Tj=25 0.01 0 0 3 6


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PDF ESJC13 9kV/450mA 12kV/350mA ESJC13 CSS-66325-F 25-4M ESJC13-09B 20pcs. 100pcs HIGH VOLTAGE DIODE 12kv ESJC13-12B 12KV ESJC13-09B HIGH VOLTAGE DIODE 12kv 350ma
1999 - Not Available

Abstract: No abstract text available
Text: Microwave oven high voltage power supply Mark ESJA13- 09B ESJA13-12B Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Conditions ESJC13 Units - 09B Repetitive , Symbols Conditions ESJC13 - 09B Maximum Forward Voltage Drop VF IF=350mA Maximum Reverse , 400 Tj=100 o C ESJC13-12B ESJC13- 09B Tj=100 300 o Tj=25 C o C IR IF 0.1 ESJC13-12B 200 [mA] [ µ A] ESJC13- 09B ESJC13- 09B 100 Tj=25 0.01 0


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PDF ESJC13 9kV/450mA 12kV/350mA ESJC13 CSS-66325-F 25-4M 100pcs ESJC13-09B ESJC13-12B
NJU26040-09B

Abstract: NJU29040-09A NJU26040 NJU26040-09A NJU26040V SSOP32 NJU29040
Text: NJU26040- 09B SRS WOW HD Processor General Description Package The NJU26040- 09B is a , -09A). The NJU26040- 09B processes a lot of sound sources, such as DVD, CD, AM/FM radio, and TV sound into spacious sound of natural virtual surround by WOW HD. The applications of NJU26040- 09B are , specification is described in the " NJU26040 Hardware Data Sheet". Ver.2008-02-17 -1- NJU26040- 09B , .1 NJU26040- 09B Block Diagram Through m ode SDI1 L/R input SDI2 Input Select mute Input


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PDF NJU26040-09B NJU26040-09B NJU29040-09A) NJU26040V NJU29040-09A NJU26040 NJU26040-09A NJU26040V SSOP32 NJU29040
1999 - ESJC13-12B

Abstract: HIGH VOLTAGE DIODE 12kv 350ma ESJC13 ESJC13-09B HIGH VOLTAGE DIODE 12kv ESJA13-12B 12kv HIGH VOLTAGE DIODE for microwave ovens high voltage diode 100 kv iz10 esja
Text: power supply Mark ESJA13- 09B ESJA13-12B Maximum Ratings and Characteristics Absolute , Units - 09B ed inu nt Io IRSM ESJC13 Conditions -12B 9 12 kV 450 , specified ) Items Symbols Conditions ESJC13 - 09B Maximum Forward Voltage Drop VF IF , 1 400 Tj=100 o C ESJC13-12B ESJC13- 09B Tj=100 300 o Tj=25 C o C IR IF 0.1 ESJC13-12B 200 [mA] [ µ A] ESJC13- 09B ESJC13- 09B 100 Tj=25 0.01


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PDF ESJC13 9kV/450mA 12kV/350mA ESJC13 CSS-66325-F 25-4M UL94VESJC13-09B 20pcs. ESJC13-12B ESJC13-09B ESJC13-12B HIGH VOLTAGE DIODE 12kv 350ma ESJC13-09B HIGH VOLTAGE DIODE 12kv ESJA13-12B 12kv HIGH VOLTAGE DIODE for microwave ovens high voltage diode 100 kv iz10 esja
2007 - Not Available

Abstract: No abstract text available
Text: March 2007 rev 0.1 Timing-SafeTM Peak EMI reduction IC PCS5P23Z05B/ 09B General Features · · , CLKOUT pad, internal to the device. Multiple PCS5P23Z05B/ 09B devices can accept the same input clock and , / 09B is a versatile, 3.3V zero-delay buffer designed to distribute high-speed Timing-SafeTM clocks with , , multi-layer PCS5P23Z05B/ 09B PCBs etc. These methods are expensive. Spread spectrum clocking reduces the , frequency. The PCS5P23Z05B/ 09B uses the center modulation spread spectrum technique in which the modulated


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PDF PCS5P23Z05B/09B 20MHz 50MHz 250pS 700pS 200pS 16pin, 150mil PCS5P23Z09B) PCS5P23Z05B)
ESJC01-12B

Abstract: uef 160 HIGH VOLTAGE DIODE 12kv 350ma ESJC01 ESJC01-09B
Text: ) ■ÄV-Kv-^ : Cathode Mark » Ä ■7 - ? Type Mark ESJC01- 09B i 1 ESJC01-12B 1 1 ■SfêfciltH , - 09B -12B Repetitive Peak Reverse Voltage Vrrm 9 12 kV Â¥ m m ft ift Average Forward Current If(av , Characteristics Items Symbols ESJCO1 - 09B I -12B Units Conditions MR ft IE Forward Voltage Drop Vf 10 12 V Tj = , I t E V. [kV] mm (ft*wt) Reverse Characteristics 20 10 0 20 10 ESX0I- 09B Tjs 1 25 , “ ac uA - _I yn. - pes. 1 1 ESJC0I- 09B i ~i F<5.l( 7P


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PDF ESJC01 30MIN. ESJC01-09B ESJC01-12B uef 160 HIGH VOLTAGE DIODE 12kv 350ma
2006 - Not Available

Abstract: No abstract text available
Text: May 2007 rev 0.2 Timing-SafeTM Peak EMI reduction IC PCS5P23Z05B/ 09B General Features · · · , CLKOUT pad, internal to the device. Multiple PCS5P23Z05B/ 09B devices can accept the same input clock and , 250pS. Refer "Spread Spectrum Control and Input-Output Skew Functional Description PCS5P23Z05B/ 09B , , multi-layer PCS5P23Z05B/ 09B PCBs etc. These methods are expensive. Spread spectrum clocking reduces the , frequency. The PCS5P23Z05B/ 09B uses the center modulation spread spectrum technique in which the modulated


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PDF PCS5P23Z05B/09B 20MHz 50MHz 250pS 700pS 200pS 16pin, 150mil PCS5P23Z09B) PCS5P23Z05B)
ESJC01-12B

Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
Text: Drawings (mm) : Cathode Mark Type Mark ESJC01- 09B i 1 ESJC01-12B 1 1 ■: Maximum Ratings and Characteristics : Absolute Maximum Ratings Items Symbols ESJC01 Units Conditions - 09B 12B Repetitive Peak , Units Conditions 09B -12B Forward Voltage Drop Vf 10 12 V Tj = 25"C, If —350mA Reverse Current , Ti» 25 IR'IOO N-IOO •c uA - pes. ESJC0I- 09B 1 ESJ , Characteristics Avalanche Breakdown Voltage N (pes.) 20 10 0 20 10 ESX0I- 09B T| ■1 25Â


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PDF ESJC01 ESJC01-09B ESJC01-12B ESJC01 ESJC0I-09B ESX0I-09B ESJC0I-098 IR 9515 a1t diode
ESJA82-10

Abstract: ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA88-06 ESJA88-08 ESJA92-12 ESJA98-06
Text: "' 12V 0 400 mA N/A N/A 11.5V S 140 mA ESJC01- 09B 9 N/A 350® 9V @ 350 mA N/A N/A ESJC01-12B 12 , -06 | J J -08 £ ESJC01- 09B , -12B 22.0 (0.866) 7.5 (0.295) 20 (0.787) 1.2 (0.0472) - 09B i 1 , (0.394) 6.0 (0.236) 24 (0.945) 1.2 (0.0472) -05 V « V ESJC07- 09B , -12B 15.0 (0.591) 4.5 (0.177) 24 (0.945) 0.8 (0.315) - 09B | ■-12B ■I ESJC30-05, -08 22.0 (0.866) 7.5 (0.295) 20.0 (0.787) 1.2


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PDF ESJA98-06 ESJA98-08 ESJA92-12 ESJA88-06 ESJA88-08 ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20
2010 - Si4709

Abstract: Si4701 si4708 Si4709-B-GM 09B19 crystal 3 mhz STC
Text: Si4708/ 09-B B R O A DC A S T F M R A D I O TU N E R F O R P O R TA BL E A P P LI C A T I O N S , possible to antenna jack and keep the FMI trace as short as possible. Si4708/ 09-B Si4708/ 09-B 2 Rev. 1.4 Si4708/ 09-B TABLE O F C ONTENTS Section Page 1. Electrical Specifications . . . . . . , Rev. 1.4 3 Si4708/ 09-B 1. Electrical Specifications Table 1. Recommended Operating Conditions , . At RF input pins. 4 Rev. 1.4 Si4708/ 09-B Table 3. DC Characteristics1 (VD = VA = 2.7 to


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PDF Si4708/09-B 16-pin Si4709 Si4701 si4708 Si4709-B-GM 09B19 crystal 3 mhz STC
M7508

Abstract: No abstract text available
Text: IV- C - 69 CODEC-MSM7508B/ 09B - FUNCTIONAL BLOCK DIAGRAM + \ 1 ^ RCLPF BPF , - CODEC * MSM7508B/ 09B ELECTORICAL CHARACTERISTICS Absolute Maximum Ratings Parameter , /384/512/768/1024/1536/1544/2048 IV-C-71 CODEC-MSM7508B/ 09B - DC Characteristics ( V dd = , - 0.80 0.80 - dB dB dB I V- C- 72 CODEC *MSM7508B/ 09B AC Characteristics , : PCMIN all "1" MSM7509B : PCMIN "11010101" MSM7508B / MSM7509B I V- C- 7 3 CODEC · MSM7508B/ 09B


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PDF MSM7508B 7MSM7509B MSM7508B MSM7509B CODEC-MSM7508B/09B M7508
2006 - GJ3055S

Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B GJ3055S BVDSS , . Rthj-a 110 /W GJ3055S Page: 1/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B , 300us, duty cycle 2%. GJ3055S Page: 2/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B , Current Page: 3/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B Fig 7. Maximum Safe Operating , . Switching Time Waveform Page: 4/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B Fig 13


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PDF 2006/11/09B GJ3055S GJ3055S O-252 O-252
FUJI ESJC04-05

Abstract: ESJC01-12B ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA88-06 ESJA88-08
Text: 140"' 12V e >400 mA N/A N/A 11.5V 0 140 mA ESJC01- 09B 9 N/A 350« 9V 9 350 mA N/A N/A ESJC01 , (0.0197) 1 * -06 | J -08 £ ESJC01- 09B , -12B 22.0 (0.866) 7.5 (0.295) 20 (0.787) 1.2 (0.0472) - 09B i , -05 10.0 (0.394) 6.0 (0.236) 24 (0.945) 1.2 (0.0472) -05 ¥ « ¥ ESJC07- 09B , -12B 15.0 (0.591) 4.5 (0.177) 24 (0.945) 0.8 (0.315) - 09B | I -12B ■I ESJC30-05, -08 22.0 (0.866) 7.5 (0.295) 20.0


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PDF ESJA98-06 ESJA98-08 ESJA92-12 ESJA88-06 ESJA88-08 ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 FUJI ESJC04-05 ESJC01-12B ESJA83-20
2006 - GI3055S

Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B GI3055S BVDSS , ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B Electrical Characteristics (Tj = 25 Parameter , :2006/11/ 09B Characteristics Curve Fig 1. Typical Output Characteristics Fig 3 , Voltage v.s. Source Current Page: 3/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/ 09B Fig 7 , / 09B Fig 13. Normalized Thermal Transient Impedance Curve Important Notice: All rights are


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PDF 2006/11/09B GI3055S GI3055S O-251) O-251
2010 - Not Available

Abstract: No abstract text available
Text: Si4708/ 09-B B R O A D C A S T F M R A D I O TU N E R FOR P O R TA B L E A P P L I C A T I O N S , Confidential. Information contained herein is covered under non-disclosure agreement (NDA). Si4708/ 09-B Si4708/ 09-B 2 Confidential Rev. 1.4 Si4708/ 09-B TABLE O F C ONTENTS Section Page 1 , 3 Si4708/ 09-B 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter , Confidential Rev. 1.4 Si4708/ 09-B Table 3. DC Characteristics1 (VD = VA = 2.7 to 3.6 V, VIO = 1.5 to 3.6 V


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PDF Si4708/09-B 16-pin Si4709) Si4708/09-GM
2008 - Si4709

Abstract: BATTERY HOLDER 2x AAA PCB 09B19 Si4708 160MAX Si4709B Si4701 AN243 76-90MHZ
Text: Si4708/ 09-B B R O A D C A S T F M R A D I O TU N E R FOR P O R TA B L E A P P L I C A T I O N S , the FMI trace as short as possible. Si4708/ 09-B This information applies to a product under , Confidential. Information contained herein is covered under non-disclosure agreement (NDA). Si4708/ 09-B 2 Confidential Rev. 1.3 Si4708/ 09-B TABLE O F C ONTENTS Section Page 1. Electrical , 3 Si4708/ 09-B 1. Electrical Specifications Table 1. Recommended Operating Conditions


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PDF Si4708/09-B 16-pin Si4709 BATTERY HOLDER 2x AAA PCB 09B19 Si4708 160MAX Si4709B Si4701 AN243 76-90MHZ
Not Available

Abstract: No abstract text available
Text: Analog Power AM90N06- 09B N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench , © Preliminary 1 Publication Order Number: DS_AM90N06-09B_1A Analog Power AM90N06- 09B , . © Preliminary 2 Publication Order Number: DS_AM90N06-09B_1A Analog Power AM90N06- 09B , AM90N06- 09B Typical Electrical Characteristics 2.5 VDS = 30V ID = 20A RDS(on) - On-Resistance(Π, Number: DS_AM90N06-09B_1A Analog Power AM90N06- 09B Package Information © Preliminary 5


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PDF AM90N06-09B
ESJC01-12B

Abstract: ESJC01 ESJC01-09B HIGH VOLTAGE DIODE 12kv 350ma
Text: Drawings (mm) : Cathode Mark Type Mark ESJC01- 09B i 1 ESJC01-12B 1 1 ■: Maximum Ratings and Characteristics : Absolute Maximum Ratings Items Symbols ESJC01 Units Conditions - 09B 12B Repetitive Peak , Units Conditions 09B -12B Forward Voltage Drop Vf 10 12 V Tj = 25"C, If —350mA Reverse Current , Ti» 25 IR'IOO N-IOO •c uA - pes. ESJC0I- 09B 1 ESJ , Characteristics Avalanche Breakdown Voltage (pes.) 20 10 20 10 ESX0I- 09B T| ■1 25°C N


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PDF ESJC01 ESJC01-09B ESJC01-12B ESJC01 ESX0I-09B ESJC0I-098 HIGH VOLTAGE DIODE 12kv 350ma
2013 - Not Available

Abstract: No abstract text available
Text: C1 6 端子名称 No. 1 2 3 4 5 6 7 8 9 10 11 12 Rev. 0.9B 端子名 CC SS RT , 3.7 150 15 ℃ ℃ パッケージ外形図 [mm] Rev. 0.9B -2- 2012/01 , U p N c hMO SFET  0.6Ω + PWGDcomp A - PWGD Rev. 0.9B VS+ + - -3- , PWON D 部品表 記号 C1 C2 C3 C4 R1 R2 R3 R4 R5 L1 Rev. 0.9B C L1 Number , …ˆ VOin VOin 300k Ω 10k Ω FSYN ゲート入力 外部同期信号 Rev. 0.9B


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PDF AP2201] AP2201 AL2050 AP2201ã
SE005

Abstract: No abstract text available
Text: ' ] 9Z' 19 96 '09 VZ'Sl P-ZBIZOI-I [ 09E ' i] [098 ' ] [ 09B ' ] [ 00^ ] 00 ' ZE VQ ' IZ V9 ' L£ 9 L '0 1 [ 09b - ' i] [090 ' L] [ 090' L] [009 ' ] 80 '¿Z Z6 9Z ZS' SZ ^S' S i [O O J^ ' U [096 ' n , 9 L ZV SV 'OE [00 L ' ED [ 09E ' ED [ 09B ' L] [ 09B ' L] [ 00^' i] LV VZ ' LV 95 ' SE ' ES 0^ ' ¿S VZ [OOE ' Z1 [ 09b -' £3 [090*53 [090 ' £] [009 ' 1] 5^` 8S ·39 SC'SS ZZ'ZS ^9 ' 0^ C 009 ` ^] [ 09¿ ' Z1 C 09E*S] [ 09E ' Z1 [006 ' 1] VO ' 99 01 ^ 0¿ VB'SS ' BS 9Z'9V [00 L ' ED [ 09E ' ED [ 09B ' ED


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PDF ES6rn/E95KftlVJie 36-d3S-K S31SNY 31VQS 031V0D1 31V0S SE005
Not Available

Abstract: No abstract text available
Text: BY 9 -B IT DYNAMIC RAM DESCRIPTION PIN C O N F IG U R A T IO N (TOP V IE W ) The M H 1M 09B , 1800 1 00 190 1575 A7 15 = D04 M H 1M 09B 1 J -1 0 M H 1M 09B 1 J A -1 0 16 = , M H 1 M 0 9 B I J A -8 A3 Vss dq2 A4 Aj 2070 140 ) 10= As M H 1M 09B 1 J -7 M H 1M 09B 1 J A -7 A8 As • Utilizes industry standard 1M RAMs in SOJ A9 NC , power dissipation: 3.96W (m ax) ) M H 1M 09B 1 J-7, M H 1M 09B 1 JA -7 . . . M H 1M 09B 1 J


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PDF 1M09B1J-7, MH1M09B1JA-7 M5M4I001BJ M5M41001BJ MH1M09B1J-7 MH1M09B1JA-7, MH1M09B1J-7,
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