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ic 558

Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
Text: 4B» BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP , °C -65 . +150 B 2/V.2.492/0875 A 1 129 BC 556 • BC 557 • BC 558 'tot 500 mW 400 300 , BC 557 BC 558 Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage - Ic = 2 mA BC 556 _ BC 557 , 558 ') — = 0,01, rp = 0,3 ms -I, -I, CBO CBO -U{ -u< -u, (BR)CBO , V V V 130 BC 556 • BC 557 • BC 558 Min. Typ. Max. Emitter-Basis-Durchbruchspannung


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Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Text: °C . 2 4 6 8 2 468 10 10° VCE(VI 10/10 408 BC 556, BC 557, BC 558 , BC 559, BC 560 STATIC , BC 557 BC 560 -45 BC 558 -30 BC 559 -25 Emitter-base breakdown voltage Tension de , 557, BC 558 , BC 559, BC 560 STATIC CHARACTERISTICS (Following) T u = 25°C (Unless otherwise stated , courant h21E BC 556 BC 557 75 475 75 475 BC 558 75 850 BC 559 125 850 BC 560 125 475 , 1 kHz h21e BC 556 BC 557 75 500 75 500 BC 558 75 900 BC 559 125 900 BC 560 125 500


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PDF bc546 bc549. 546/bc 547/bc 549/bc 548/bc Transistor - BC 547, CL 100 bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
B557B

Abstract: TBC558 B558B ic 558 TBC556 for ic 556 556A 556 b
Text: SILICON PNP EPITAXIAL TYPE BC556 558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. . High VcEO : -65V (TBC556) -45V (TBC557) -30V (TBC558) . Low Noise MAXIMUM RATINGS (Ta , V UNIT BC556 558 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off , VCe =- 5V, Ic=-0.2mA Rg=2kii, f=lkHz 558 , : 75-250 : 125-250 : 220-475 - 300 4.5 2 10 MHz pF dB 556-A, 557-A, 558 -A 556-B, 557-B, 558 -B DC CURRENT GAIN hpE COLLECTOR CURRENT


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PDF BC556 TBC556) TBC557) TBC558) TBC556 TBC557 TBC558 B557B B558B ic 558 for ic 556 556A 556 b
PG3889S

Abstract: 3338S KR3301X KR3302X KR3308S MPR3338S MAY3378S 3372X
Text: . TYP. 647 635 624 606 590 572 567 558 30 100 30 30 30 30 30 30 20 10 20 20 , Dominant Half Width d IF TYP. TYP. 647 635 624 606 590 572 567 558 30 100 30 30 30 , 567 558 30 100 30 30 30 30 30 30 20 10 20 20 20 20 20 20 IF MAX. VR , ) Spectral Line Dominant Half Width d IF TYP. TYP. 647 635 624 606 590 572 567 558 30 , Width d IF TYP. TYP. 647 635 624 606 590 572 567 558 30 100 30 30 30 30 30 30


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PDF KR3308S 3362X 3372X PG3889S 3338S KR3301X KR3302X KR3308S MPR3338S MAY3378S 3372X
MAA 502

Abstract: LED 5mm round yellow DB5305S DC5305S DG5305S EFA5365S EFR5365S EFY5365S FA5365S FR5365S
Text: 555 558 30 20 2.1 20 100 4 mA µA V mcd Units (2 1/2) 4 , GaP Pure Green 2 4 20 555 558 30 20 2.1 2.5 20 100 4 mA , . TYP. 647 635 624 606 590 572 567 558 30 10 30 30 30 30 30 30 20 10 20 20 20 , Width d IF TYP. TYP. 647 635 624 606 590 572 567 558 30 100 30 30 30 30 30 30 , Dominant Half Width d IF TYP. TYP. 647 635 624 606 590 572 567 558 30 100 30 30 30


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PDF 5305S 5365S 5366X 5306X DG5306X MAA 502 LED 5mm round yellow DB5305S DC5305S DG5305S EFA5365S EFR5365S EFY5365S FA5365S FR5365S
C 547 C

Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
Text: 4m BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Application: Vor- und Treiberstufen Pre and driver stages Besondere Merkmale: • Verlustleistung 500 mW • In Gruppen sortiert • Komplementär zu BC 556, BC 557, Features: • Power dissipation 500 mW • in groups selected • Complementary to BC 556, BC 557, BC 558 BC 558 Vorläufige technische Daten • Preliminary specifications Abmessungen in mm


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1999 - 2N6988

Abstract: No abstract text available
Text: Data Sheet No. 2N6988 Generic Part Number: 2N6988 Type 2N6988 Geometry 0600 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/ 558 Features: · · · · · · General purpose silicon transistor for switching and amplifier applications. Housed in a 14-Lead Flat Package. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/ 558 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa


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PDF 2N6988 MIL-PRF-19500/558 14-Lead MIL-PRF-19500/558 14L-FlatPack 2N6988
2N2907

Abstract: 2N6987U JANTX2N6987U
Text: ®OPTEK Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U e Features • Ceramic surface mount package • Hermetically sealed • Small package minimizes circuit board area required • Electrical performance similar to a 2N2907 • Qualification per MIL-PRF-19500/ 558 Description The JANTX2N6987U is a hermetically sealed, ceramic surface-mount , 25° C. Refer to MIL-PRF-19500/ 558 for complete requirements. When ordering parts without processing


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PDF 2N6987U 2N2907 MIL-PRF-19500/558 JANTX2N6987U 2N2907
1999 - 2N6987

Abstract: No abstract text available
Text: Data Sheet No. 2N6987 Generic Part Number: 2N6987 Type 2N6987 Geometry 0600 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/ 558 Features: · · · · · · An array of four independent PNP silicon switching transistors. Housed in a cerdip case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/ 558 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available


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PDF 2N6987 MIL-PRF-19500/558 MIL-PRF-19500/558 2N6987
H-3000L

Abstract: HBR5066X 5066X ER-300L ER-500L H-1000L H-2000L HAA5066X HAY5066X HPY5066X
Text: 20 2.1 2.5 20 20 4 20 555 558 30 20 2.1 2.5 20 20 4 , 560 567 30 20 2.1 2.5 20 100 4 555 558 30 20 2.1 2.5 20 , 560 567 30 20 2.1 2.5 20 100 4 10/5 15/10 20 555 558 30 20 , /BG5305S GaP Pure Green 20 555 558 30 20 2.1 20 100 4 mA µA V


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PDF H-1000L H-2000L H-3000L wi0/20 PR5305S EVR/VR5305S EPY/PY5305S EPG/PG5305S EBG/BG5305S H-3000L HBR5066X 5066X ER-300L ER-500L HAA5066X HAY5066X HPY5066X
2003 - TEA 1404

Abstract: No abstract text available
Text: 5.58 13.15 - 2.00 35.88 43.45 - 7.58 - - 9.00 9.00 - - 9.00 14.33 4.25 10.50 - - 9.00 3.00 8.00 - - 9.00 1.79 5.58 - - 9.00 ns ns ns ns ns ns ns ns 2.00 29.25 35.50 - , 17.99 Min - Max 16.00 Min - Max 14.13 Min - Max 12.31 ns 40 MHz 50 MHz 66 MHz Unit 5.58 - 4.25 - 3.00 - 1.79 - ns 13.15 - 10.5 - 8.00 - 5.58 - ns 5.58 - 4.25 - 3.00 - 1.79 - ns 13.15 - 10.5 - 8.00


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PDF MPC857TEC/D MPC857T MPC857T TEA 1404
2005 - MPG3361X

Abstract: 3361X MAA 240
Text: Red Pale Red Yellow Green Yellow Orange Pale Yellow Pale Orange Clear Pale Green 558 567 572 590 , . 2.1 2.8 20 555 558 30 78 2.1 2.8 20 560 567 30 94 2.1 2.8 20 570 572 30 94 2.2 2.8 20 580 590


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PDF 3361X 558nm 567nm 572nm 590nm 606nm 624nm 647nm 630nm MPG3361X MAA 240
1997 - pnp transistor 1000v

Abstract: FMMT558 FMMT458 ZTX558 DSA003698
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 TYPICAL CHARACTERISTICS - (Volts) 1.4 IC/IB =10 IC/IB =20 1.6 IC/IB =50 1.4 - (Volts) 1.6 1.2 1.0 IC/IB =10 ABSOLUTE MAXIMUM RATINGS. 1.0 , COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 TYPICAL CHARACTERISTICS - (Volts) 1.4 IC/IB


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PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V pnp transistor 1000v FMMT558 FMMT458 ZTX558 DSA003698
2006 - pnp transistor 1000v

Abstract: FMMT558 FMMT458 DSA003671
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 TYPICAL CHARACTERISTICS - (Volts) 1.4 IC/IB =10 IC/IB =20 1.6 IC/IB =50 1.4 - (Volts) 1.6 1.2 1.0 IC/IB =10 ABSOLUTE MAXIMUM RATINGS. 1.0 , COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 TYPICAL CHARACTERISTICS - (Volts) 1.4 IC/IB


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PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V pnp transistor 1000v FMMT558 FMMT458 DSA003671
2006 - Not Available

Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS - (Volts) 1.4 IC/IB =10 IC/IB =20 1.6 IC/IB =50 1.4 - (Volts) 1.6 1.2 1.0 IC/IB =10 ABSOLUTE MAXIMUM RATINGS. 1.0 , PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS - (Volts) 1.4 IC/IB =10 IC/IB =20 1.6


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PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V
1N6133

Abstract: No abstract text available
Text: 13.50 14.40 16.20 18.00 19.8 21.6 24.3 27.0 29.7 32.4 35.1 38.7 42.3 45.9 50.4 55.8 61.2 67.5 73.8 81.9 , 18.00 19.80 21.6 24.3 27.0 29.7 32.4 35.1 38.7 42.3 45.9 50.40 55.8 61.2 67.5 73.8 81.9 90.0 99.0 108.0


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PDF 1N6102 1N6103 1N6104 1N6105 1N6106 1N6107 1N6108 1N6109 1N6110 1N6111 1N6133
1997 - 2N6987U

Abstract: 2N2907 JAN 2N2907 TRANSISTOR 2N2907 JANTX2N6987U JANTX2N6987
Text: Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) · Ceramic surface mount package · Hermetically sealed · Small package minimizes circuit board area required · Electrical performance similar to a 2N2907 · Qualification per MIL-PRF-19500/ 558 , -19500/ 558 for complete requirements. When ordering parts without processing, do not use a JAN prefix


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PDF 2N6987U 2N2907 MIL-PRF-19500/558 2N6987U 2N2907 JAN 2N2907 TRANSISTOR 2N2907 JANTX2N6987U JANTX2N6987
Not Available

Abstract: No abstract text available
Text: OPTEK Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U Features · · · Ceramic surface mount package Hermetically sealed Small package minimizes circuit board area required · Electrical performance similar to a 2N2907 · Qualification per MIL-PRF-19500/ 558 Absolute Maximum Ratings (Ta = 25° C unless otherwise noted , , Pd = 250 mW each transistor, T a = 25° C. Refer to MIL-PRF-19500/ 558 for complete requirements. When


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PDF 2N6987U 2N6987U 2N2907 MIL-PRF-19500/558
2N2907 TRANSISTOR

Abstract: 2N2907 JAN 2n2907 or similar PNP 2n2907 TRANSISTOR PNP 2N2907 2N6987U JANTX2N6987U
Text: OPTEK Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U Features • Ceramic surface mount package • Hermetically sealed • Small package minimizes circuit board area required • Electrical performance similar to a 2N2907 • Qualification per MIL-PRF-19500/ 558 Description The JANTX2N6987U is a hermetically sealed, ceramic , , Ta = 25° C. Refer to MIL-PRF-19500/ 558 for complete requirements. When ordering parts without


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PDF 2N6987U 2N6987U 2N2907 MIL-PRF-19500/558 JANTX2N6987U 0D03ZÃ 2N2907 TRANSISTOR 2N2907 JAN 2n2907 or similar PNP 2n2907 TRANSISTOR PNP 2N2907
2002 - BRPG1211C

Abstract: BRBG1211C
Text: 558 nm 30 30 30 30 30 30 20 20 20 20 20 20 mA 1.7 2.1 1.7 2.1 1.7 2.1 V 2.3 2.8 2.3 2.8


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PDF 1211C BRPY1211C BRPG1211C BRBG1211C BRPG1211C BRBG1211C
2001 - BRPG1201W

Abstract: No abstract text available
Text: 647 572 647 567 647 558 nm 30 30 30 30 30 30 20 20 20 20 20 20 mA 1.7 2.1 1.7 2.1 1.7 2.1 V


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PDF BRPY1201W BRPG1201W BRBG1201W BRPG1201W
2006 - 8 Position 16 Pin SPST dip switch

Abstract: SD03H1SB SD08H1B SD08H0B SD09H0B SD10H0B SD02H0B SD03H0B SD04H0B SD05H0B
Text: ) 45 5 . 558 (14,17) 40 6 .658 (16,71) 30 7 .758 (19,25 25 8 .858 (21 , SD12H0SK 2 .258 (6,55) 85 3 .358 (9,09) 60 4 .458 (11,63) 45 5 . 558 (14,17 , .258 (6,55) .358 (9,09) 60 4 .458 (11,63) 45 5 . 558 (14,17) .027 (0,70 , 4 .458 (11,63) 45 5 . 558 (14,17) 40 6 .658 (16,71) 30 7 .758 (19,25 , .258 (6,55) 100 3 .358 (9,09) 100 4 .458 (11,63) 100 5 . 558 (14,17) 100


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PDF SD09H0SBR SD10H0SBR SD12H0SBR SD02H0SKR SD03H0SKR SD04H0SKR SD05H0SKR SD06H0SKR SD07H0SKR SD08H0SKR 8 Position 16 Pin SPST dip switch SD03H1SB SD08H1B SD08H0B SD09H0B SD10H0B SD02H0B SD03H0B SD04H0B SD05H0B
2006 - Not Available

Abstract: No abstract text available
Text: Yellow Green Red Milky White 558 647 567 647 572 647 20 20 20 20 20 20 1.7 7.0 4.5 7.0 7.0 , Angle VR =4V IF=20mA IF=20mA IF=20mA IR p d MAX. TYP. TYP. TYP. 2.8 100 555 558 30 2.8 100 560 567 30


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PDF 1211C 558nm 567nm 572nm 647nm
2001 - Not Available

Abstract: No abstract text available
Text: 567 647 558 nm 30 30 30 30 30 30 20 20 20 20 20 20 mA 1.7 2.1 1.7 2.1 1.7 2.1 V 2.3 2.8


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PDF 1211C BRPY1211C BRPG1211C BRBG1211C
2002 - BRPG1201W

Abstract: No abstract text available
Text: 647 558 nm 30 30 30 30 30 30 20 20 20 20 20 20 mA 1.7 2.1 1.7 2.1 1.7 2.1 V 2.0 2.5 2.0


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PDF BRPY1201W BRPG1201W BRBG1201W BRPG1201W
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