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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC2655CGN-H12#TRPBF Linear Technology LTC2655 - Quad I2C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LTC2655CUF-L12#TRPBF Linear Technology LTC2655 - Quad I2C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: QFN; Pins: 20; Temperature Range: 0°C to 70°C
LTC2655BCGN-L16#PBF Linear Technology LTC2655 - Quad I2C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LTC2655BCUF-H16#PBF Linear Technology LTC2655 - Quad I2C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: QFN; Pins: 20; Temperature Range: 0°C to 70°C
LTC2655CGN-L12#PBF Linear Technology LTC2655 - Quad I2C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LTC2655IUF-H12#PBF Linear Technology LTC2655 - Quad I2C 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: QFN; Pins: 20; Temperature Range: -40°C to 85°C

BR C2655 Transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - C2655 NPN Transistor

Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm · · · · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed , IEBO V ( BR ) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage , (1) classification O: 70 to 140, Y: 120 to 240 Marking C2655 Part No. (or abbreviation


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PDF 2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
C2655 NPN Transistor

Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor C2655 characteristics BR C2655 c2655 equivalent C2655 Y 06
Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · , VEB = 5 V, IC = 0 1.0 A V ( BR ) CEO IC = 10 mA, IB = 0 50 V VCE = , C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates


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PDF 2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor C2655 characteristics BR C2655 c2655 equivalent C2655 Y 06
2004 - C2655 NPN Transistor

Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T BR C2655 2sc2655 c2655 equivalent
Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications · Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · , IEBO VEB = 5 V, IC = 0 1.0 µA V ( BR ) CEO IC = 10 mA, IB = 0 50 V , Marking C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator A line


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PDF 2SC2655 2SA1020. 15oducts C2655 NPN Transistor transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T BR C2655 2sc2655 c2655 equivalent
2009 - C2655 NPN Transistor

Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655
Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · , VEB = 5 V, IC = 0 1.0 A V ( BR ) CEO IC = 10 mA, IB = 0 50 V VCE = , Marking C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator Note 3


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PDF 2SC2655 2SA1020. C2655 NPN Transistor C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655
2003 - c2655

Abstract: C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020
Text: , IC = 0 1.0 A V ( BR ) CEO IC = 10 mA, IB = 0 50 V VCE = 2 V, IC = , ~140, Y: 120~240 C2655 () No. 3 3: No. : [[Pb]]/INCLUDES > MCV : [[G]]/RoHS


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PDF 2SC2655 2SA1020 O-92MOD c2655 C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020
1999 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Text: derived. (19) IV. Glossary of Microwave Transistor Terminology V( BR )CBO Breakdown voltage of a , High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types , Characteristics . a. Collector-Base Junction, V( BR ) CBO, ICBO . b. Emitter-Base Junction, V( BR ) EBO, IEBO . c


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PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology
1998 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Text: shown above were derived. (19) IV. Glossary of Microwave Transistor Terminology V( BR )CBO , High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents Transistor Structure Types . A , Characteristics . a. Collector-Base Junction, V( BR ) CBO, ICBO . b. Emitter-Base Junction, V( BR ) EBO, IEBO . c


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PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology
AN952

Abstract: MJ16016 AN952 MOTOROLA MUR8100 MR826 MJH16008 MJ16018 MJ16008 MJ16004 Ultra-Fast Recovery Rectifiers
Text: breakdown voltage. Conversely, at turn-on, gain limits the transistor 's voltage sustaining ability to V( BR , turned-on, the ability of the transistor to sustain a voltage above V( BR )CEO(sus)is little importance, since , test results that follow. TABLE 1. TRANSISTOR RATINGS Transistor 'C(Max) (Amps) V( BR )CEOIsus) (Volts , rules, a transistor rated for V( BR )CEO(sus) greater than 750 volts would be required. For purposes of , TRANSISTOR SOA Prepared by: Warren Schultz Motorola Power Products Division Traditionally, bipolar power


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PDF AN952 1ATX1871S-2 AN952/D AN952 MJ16016 AN952 MOTOROLA MUR8100 MR826 MJH16008 MJ16018 MJ16008 MJ16004 Ultra-Fast Recovery Rectifiers
1999 - D45 TRANSISTOR

Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent power transistor MTBF IGBT module an363 ST Power bipolar transistors Selection guide IGBT Designers Manual
Text: base terminal opened, hence the V( BR )CES is the value used to choose the transistor . The V( BR )CEO , , how high the current switched between the V( BR )CEO and V( BR )CES of the transistor is of primary , purpose of this paper is to give a general overview of how to read a transistor specification. We will , the selection of the right transistor are discussed. Some common pitfalls are mentioned and the , specifications with care The specifications for each power switching transistor today cover between three and


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1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) 20pplication
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A)
1997 - ZHB6790

Abstract: 500mA H-bridge BR27 npn-pnp dual NPN/PNP transistor sot223 partmarking 6 C SM-8 BIPOLAR TRANSISTOR
Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES , transistor on Q1 and Q3 on or Q2 and Q4 on equally Ptot 1.25 2 W W Derate above 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 10 16 mW/ °C mW/ °C Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 100 , Resistance Q1 and Q3 or Q2 and Q4 "On" Transient Thermal Resistance Single Transistor "On" 10 2.0


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PDF ZHB6790 OT223) ZHB6790 500mA H-bridge BR27 npn-pnp dual NPN/PNP transistor sot223 partmarking 6 C SM-8 BIPOLAR TRANSISTOR
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , Figure 3). This connection determines the VBIAS input of the reference transistor . The VBIAS input is , is recommended. The opposite side of the reference transistor is used as the reference voltage (VREF


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) SN74TVC3010
1999 - C101

Abstract: SN74TVC3010 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , transistors (see Figure 3). This connection determines the VBIAS input of the reference transistor . The VBIAS , on VBIAS is recommended. The opposite side of the reference transistor is used as the reference


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) SN74TVC3010 C101 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A)
1999 - C101

Abstract: SN74TVC3010 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , transistors (see Figure 3). This connection determines the VBIAS input of the reference transistor . The VBIAS , on VBIAS is recommended. The opposite side of the reference transistor is used as the reference


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) SN74TVC3010 C101 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) 20m/clocks
rt 108 power transistor

Abstract: phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM MA3036 jA3018
Text: 'CEO v( BR )CEO v( BR )CBO v( BR )EBO For Each Transistor (Qi, Qj, Q3, Q4) Collector Cutoff Current Collector , €¢ |jA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed on a , maximum flexibility in circuit design for applications from dc to 120 MHz. Excellent transistor and diode , FAIRCHILD LIC TRANSISTOR AND DIODE ARRAYS • juA30XX SERIES MA3036 • MATCHED TRANSISTOR


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PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 rt 108 power transistor phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM jA3018
2011 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT3946 Preliminary DUAL TRANSISTOR COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3946 is a complementary NPN/PNP small signal surface mount transistor . It's suitable for low power amplification and switch. FEATURES , 1 of 5 QW-R218-015.a MMDT3946 MARKING Preliminary DUAL TRANSISTOR PIN , ) Preliminary DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER


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PDF MMDT3946 MMDT3946 MMDT3946L-AL6-R MMDT3946G-AL6-R MMDT3946L-AL6-R OT-363 QW-R218-015ues QW-R218-015
Not Available

Abstract: No abstract text available
Text: Absolute maximum ratings of V( BR )CEO are defined with the test current, Itest, whereas the transistor has , ") B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter " Transistor Equivalent Circuit") shows the different capacitances in a transistor , frequency of oscillation CL Load capacitance Frequency by which the power gain of a transistor , base-collector) of a transistor . By applying reverse bias across its terminals, the third terminal is


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PDF
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) MTSS001C 4040064/F MO-153
1995 - lm314

Abstract: surface mount transistor A49 LM3146M lm3146n LM3146 KX 001 10B4 diode N14A M14A DV10
Text: LM3146 High Voltage Transistor Array General Description Features The LM3146 consists of , RRD-B30M115 Printed in U S A LM3146 High Voltage Transistor Array February 1995 Absolute Maximum , (15 seconds) Units Power Dissipation Each transistor TA e 25 C to 55 C 300 mW TA l 55 C , Limits Conditions Min Typ Units Max V( BR )CBO Collector to Base Breakdown Voltage IC e 10 mA IE e 0 40 72 V V( BR )CEO Collector to Emitter Breakdown Voltage IC e 1 mA IB e


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PDF LM3146 14-lead lm314 surface mount transistor A49 LM3146M lm3146n KX 001 10B4 diode N14A M14A DV10
BFQ268

Abstract: No abstract text available
Text: Philips Semiconductors NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE D _ , silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to ensure , a low output capacitance. This transistor is primarily intended for application in the driver for , .1 SOT172A1. A version with V, ( BR )CBO = 115 V, V( BR )CER = 110 V and V( BR )CEO = 95 V is available on , Semiconductors NPN 1 GHz video transistor Product specification T-33-05 - BFQ268; BFQ268/I PHILIPS


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PDF BFQ268; BFQ268/1 711002t) BFQ268 OT172A1) BFQ268/I OT172A3 BFQ268/I 004SbbD
1976 - SN75468

Abstract: Darlington pair IC schematic ULN2003 SN75468DR SN75468N SN75468D SN75469 SN75469N ULN2003A ULN2004A
Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current (Single D D D D , SN75469 are high-voltage, high-current Darlington transistor arrays. Each consists of seven npn , . POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS , 655303 · DALLAS, TEXAS 75265 E SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D -


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PDF SN75468, SN75469 SLRS023D 500-mA SN75468 ULN2003A ULN2004A, SN75468 SN75469 Darlington pair IC schematic ULN2003 SN75468DR SN75468N SN75468D SN75469N ULN2004A
1976 - SN75468

Abstract: No abstract text available
Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current (Single D D D D D , /ordering information The SN75468 and SN75469 are high-voltage, high-current Darlington transistor arrays , SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 logic , POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS


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PDF SN75468, SN75469 SLRS023D 500-mA ULN2003A ULN2004A, SN75468 SN75469 SN75468
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