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1300340006 Molex Circular Connector,
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13003.41.01 General Cable Technologies Corporation CABLE 3COND 18AWG BLACK 1000'
13-003.5-172 Aries Electronics Inc Interconnection Device, ROHS COMPLIANT

BR 13003 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
Text: TE 13003 a^QO'te DDORb'S? : AL GG Silicon NPN Power Transistors Applications: Switching , ^EBO *c ^ C M T E 13002 300 600 9 1,5 3 0.75 0.75 38 150 - 6 5 .+ 1 5 0 T E 13003 400 700 V V V A A A , TELEFUNKEN ELECTRONIC 17E D ODOUEfl 3 AL(S6 T-33-11 Min. Typ. Max. TE 13002 · TE 13003 , = 150°C, Vr 4S0 Lc. = 60 0 V · VCE = 70 0 V TE 13002 TE 13003 TE 13002 TE 13003 'CES 'cES , Collector-emitter breakdown voltage /c = 100 mA, i.c = 125 mH TE 13002 Fig. 1,2 TE 13003 Emitter-base breakdown


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PDF T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
2009 - 13003

Abstract: X 13003 13003 d BR 13003 PIN Photodiode For CATV Receiver PIN Photodiode 1550nm PDA-1300-3 InGaAs Photodiode 1550nm PDA-1300 1550nm catv receiver
Text: Optoway PDA- 1300-3 * PDA- 1300-3 3 GHz InGaAs PIN Photodiode Module for CATV/Wireless/SAT Receiver * DESCRIPTION PDA- 1300-3 InGaAs PIN Photodiode series are high quality 3 GHz analog photodetectors designed for , /W Note (1*) -70 dBc BR 2 Order Intermodulation Modulation Back Reflection = 1550 , 4/9/2009 V2.0 Optoway PDA- 1300-3


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PDF PDA-1300-3 PDA-1300-3 13003 X 13003 13003 d BR 13003 PIN Photodiode For CATV Receiver PIN Photodiode 1550nm InGaAs Photodiode 1550nm PDA-1300 1550nm catv receiver
2009 - REGULATOR sw 13003

Abstract: transistor sw 13003 sw 13003 PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR SW 13003 A NMP13003 Sw 13003 c etc 13003 REGULATOR 13003
Text: Ordering number : ENA1219 NMP13003( 13003 series) SANYO Semiconductors DATA SHEET NMP13003 ( 13003 series) Features · · · · NPN Triple Diffused Planar Silicon Transistor Switching , . A1219-1/4 NMP13003( 13003 series) Continued from preceding page. Parameter Gain-Bandwidth Product , Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V( BR )CBO V( BR )CES V( BR )CEO V( BR )EBO ton tstg tf Conditions VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=0.5A, IB=0.1A IC


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PDF ENA1219 NMP13003 NMP13003 PW300s, cycle10% A1219-4/4 REGULATOR sw 13003 transistor sw 13003 sw 13003 PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR SW 13003 A Sw 13003 c etc 13003 REGULATOR 13003
2008 - sa 13003

Abstract: 13003 X 13003 d 13003 x 13003 L H 13003 PIN photodiode responsivity 1550nm 2,5 GHz 13003 d d f 13003 13003 A
Text: Optoway PDA- 1300-3 * PDA- 1300-3 3 GHz InGaAs PIN Photodiode Module for CATV/Wireless/SAT Receiver * DESCRIPTION PDA- 1300-3 InGaAs PIN Photodiode series are high quality 3 GHz analog photodetectors designed for , 0.85 A/W Note (1*) -70 dBc BR 2 Order Intermodulation Modulation Back Reflection , /1/2007 V1.0 Optoway PDA- 1300-3


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PDF PDA-1300-3 PDA-1300-3 sa 13003 13003 X 13003 d 13003 x 13003 L H 13003 PIN photodiode responsivity 1550nm 2,5 GHz 13003 d d f 13003 13003 A
crystal HCJ

Abstract: HCJ crystal si 13003 br crystal hcj 30 motor 42SH optical pickup unit power supply for magnetron iron bh curve hitachi optical pickup hdd motor hitachi
Text: . 1 Features/Applications . 2 Br , Magnetic characteristics Maximum energy product (BH)max Residual flux density Br Intrinsic coercive force HCJ Recoil permeability Reversible temperature coefficient of Br Temperature coefficient of HCJ , . 001-02 / 20081209 / e331.fm (3/31) Br /HCJ CHARACTERISTICS DISTRIBUTION OF NEOREC MAGNETS [mT , Residual flux density Br 27UX 26 26A 1000 10 24 22 REC(Sm-Co) 18 Transverse


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PDF 2002/95/EC, crystal HCJ HCJ crystal si 13003 br crystal hcj 30 motor 42SH optical pickup unit power supply for magnetron iron bh curve hitachi optical pickup hdd motor hitachi
2013 - transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 transistor ST 13003 w 78/13003 transistor smps circuit E 13003 b TRANSISTOR 13003 charger 13003 Transistor NPN Power TO 126 st 13003 TRANSISTOR npn 13003 TRANSISTOR
Text: Marking Package Packaging ST13003 13003 SOT-32 Tube ST13003-K 13003 SOT , 0.75 A, tP < 10 μs) V( BR )EBO V 1.5 A 3 A Base current 0.75 A IBM Base , Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol ICES V( BR


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PDF ST13003, ST13003-K OT-32 SC06960r DocID13533 transistor ST 13003 w, TO-126 13003 transistor smps circuit electronic ballast by transistor 13003 transistor ST 13003 w 78/13003 transistor smps circuit E 13003 b TRANSISTOR 13003 charger 13003 Transistor NPN Power TO 126 st 13003 TRANSISTOR npn 13003 TRANSISTOR
HCJ crystal

Abstract: crystal HCJ NEOREC46HF crystal hcj 30 NEOREC45SH motor 42SH cd 14106 optical pickup unit koe sheet NEOREC-41
Text: . 1 Features/Applications . 2 Br , Magnetic characteristics Maximum energy product (BH)max Residual flux density Br Intrinsic coercive force HCJ Recoil permeability Reversible temperature coefficient of Br Temperature coefficient of HCJ , . 002-02 / 20100523 / e331.fm (3/33) Br /HCJ CHARACTERISTICS DISTRIBUTION [T] ( kG) 1.5 15 , 34SH 30EV Residual flux density Br 30UX 32A 1.1 31UH 32AH 30 27UX 11 26 24


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PDF 2002/95/EC, HCJ crystal crystal HCJ NEOREC46HF crystal hcj 30 NEOREC45SH motor 42SH cd 14106 optical pickup unit koe sheet NEOREC-41
2003 - 13003

Abstract: etc 13003 PC 13003 TRANSISTOR circuit 15C02S PC 13003 TRANSISTOR PC 13003 13003 TRANSISTOR equivalent 13003 TRANSISTOR 13003 application notes ENN7355
Text: Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13003 TS IM TA , Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min typ IE


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PDF ENN7355 15C02S 15C02S] 13003 etc 13003 PC 13003 TRANSISTOR circuit 15C02S PC 13003 TRANSISTOR PC 13003 13003 TRANSISTOR equivalent 13003 TRANSISTOR 13003 application notes ENN7355
2003 - 13003 TRANSISTOR

Abstract: 7353-1 transistor PC 13003 TRANSISTOR 15C02CH 13003 NPN Transistor features ar 13003
Text: / 13003 TS IM TA-100126 No.7353-1/4 15C02CH Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min


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PDF ENN7353A 15C02CH 15C02CH] 13003 TRANSISTOR 7353-1 transistor PC 13003 TRANSISTOR 15C02CH 13003 NPN Transistor features ar 13003
2003 - Not Available

Abstract: No abstract text available
Text: / 13003 TS IM TA-100138 No.7354-1/4 15C02MH Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V( BR )EBO min


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PDF ENN7354A 15C02MH 15C02MH]
2003 - 7353-1 transistor

Abstract: PC 13003 TRANSISTOR circuit ar 13003 BR 13003 ENN7353 13003 TRANSISTOR 15C02CH transistor 13003 PC 13003 TRANSISTOR d 13003 t
Text: Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13003 TS IM TA , Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min typ IE


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PDF ENN7353 15C02CH 15C02CH] 7353-1 transistor PC 13003 TRANSISTOR circuit ar 13003 BR 13003 ENN7353 13003 TRANSISTOR 15C02CH transistor 13003 PC 13003 TRANSISTOR d 13003 t
2003 - Not Available

Abstract: No abstract text available
Text: / 13003 TS IM TA-100126 No.7353-1/4 15C02CH Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V( BR )EBO min


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PDF ENN7353A 15C02CH 15C02CH]
2003 - 13003 TRANSISTOR

Abstract: PC 13003 TRANSISTOR 15C02MH 13003 TRANSISTOR PC 13003 TRANSISTOR
Text: , TOKYO, 110-8534 JAPAN 91003 TS IM / 13003 TS IM TA-100138 No.7354-1/4 15C02MH Continued from , Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min typ IE=10µA, IC=0 See specified Test Circuit. Turn-ON Delay


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PDF ENN7354A 15C02MH 15C02MH] 13003 TRANSISTOR PC 13003 TRANSISTOR 15C02MH 13003 TRANSISTOR PC 13003 TRANSISTOR
2009 - 13003 TRANSISTOR

Abstract: 15C02S 13003 TRANSISTOR npn
Text: / 13003 TS IM TA-100137 No.7355-1/4 15C02S Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Collector-to-Base Breakdown Voltage V( BR )CBO IC=10A, IE=0 20 V Collector-to-Emitter Breakdown Voltage V( BR )CEO IC=1mA, RBE= 15 V Emitter-to-Base Breakdown Voltage V( BR )EBO ton IE=10A, IC=0 Turn-ON Delay Time 5


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PDF ENN7355A 15C02S 15C02S] 13003 TRANSISTOR 15C02S 13003 TRANSISTOR npn
Not Available

Abstract: No abstract text available
Text: Semiconductor Components Industries, LLC, 2013 August, 2013 90512 TKIM/91003 TSIM/ 13003 TSIM TA-100138 No , fT Cob VCE(sat) VBE(sat) V( BR )CBO V( BR )CEO V( BR )EBO ton tstg tf VCB=12V, IE=0A VEB=4V, IC=0A VCE


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PDF EN7354B 15C02MH
2003 - PC 13003 TRANSISTOR circuit

Abstract: PC 13003 TRANSISTOR 13003 13003 TRANSISTOR 15C02MH 13003 application notes all transistor 13003 transistor 13003 PC 13003 13003 marking transistor
Text: , TOKYO, 110-8534 JAPAN 13003 TS IM TA-100138 No.7354-1/4 15C02MH Continued from preceding page , Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min typ IE=10µA, IC=0 See specified Test Circuit. Turn-ON Delay Time ton


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PDF ENN7354 15C02MH 15C02MH] PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR 13003 13003 TRANSISTOR 15C02MH 13003 application notes all transistor 13003 transistor 13003 PC 13003 13003 marking transistor
2003 - PC 13003 TRANSISTOR

Abstract: PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR MARKING YB 13003 TRANSISTOR 13003 NPN Transistor features 7357 TRANSISTOR 13003 15C02SS T 08 13003 transistor
Text: Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13003 TS IM TA , Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min typ IE


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PDF ENN7357 15C02SS 15C02SS] PC 13003 TRANSISTOR PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR MARKING YB 13003 TRANSISTOR 13003 NPN Transistor features 7357 TRANSISTOR 13003 15C02SS T 08 13003 transistor
2003 - 13003 TRANSISTOR

Abstract: ic marking Yb TRANSISTOR MARKING YB PC 13003 TRANSISTOR circuit 15C02S 7355 13003 NPN Transistor features 73-551 13003 TRANSISTOR equivalent 13003 TRANSISTOR PC 13003 TRANSISTOR
Text: / 13003 TS IM TA-100137 No.7355-1/4 15C02S Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Ratings Conditions Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min


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PDF ENN7355A 15C02S 15C02S] 13003 TRANSISTOR ic marking Yb TRANSISTOR MARKING YB PC 13003 TRANSISTOR circuit 15C02S 7355 13003 NPN Transistor features 73-551 13003 TRANSISTOR equivalent 13003 TRANSISTOR PC 13003 TRANSISTOR
2003 - PC 13003 TRANSISTOR circuit

Abstract: 13003 NPN Transistor features 13003 TRANSISTOR TRANSISTOR MARKING YB 15C02SS marking YK ic marking YK
Text: , TOKYO, 110-8534 JAPAN 91003 TS IM / 13003 TS IM TA-100136 No.7357-1/4 15C02SS Continued from , Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V( BR )EBO min typ IE=10µA, IC=0 See specified Test Circuit. Turn-ON Delay


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PDF ENN7357A 15C02SS 15C02SS] PC 13003 TRANSISTOR circuit 13003 NPN Transistor features 13003 TRANSISTOR TRANSISTOR MARKING YB 15C02SS marking YK ic marking YK
2003 - PC 13003 TRANSISTOR circuit

Abstract: PC 13003 TRANSISTOR T 08 13003 transistor 7356 13003 application notes 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR PC 13003 13003 NPN Transistor features 15C02SP
Text: JAPAN 13003 TS IM TA-100119 No.7356-1/4 15C02SP Continued from preceding page. Parameter , VBE(sat) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V( BR )CEO Emitter-to-Base Breakdown Voltage min IC=400mA, IB=20mA IC=400mA, IB=20mA IC=10µA, IE=0 V( BR )CBO V( BR


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PDF ENN7356 15C02SP 15C02SP] PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR T 08 13003 transistor 7356 13003 application notes 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR PC 13003 13003 NPN Transistor features 15C02SP
7353-1 transistor

Abstract: No abstract text available
Text: , 2013 August, 2013 72512 TKIM/91003 TSIM/ 13003 TSIM TA-100126 No.7353-1/6 CD 15C02CH , Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V( BR )CBO V( BR )CEO V( BR )EBO ton tstg tf VCB=12V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA VCE=2V, IC=50mA VCB


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PDF EN7353B 15C02CH 7353-1 transistor
Not Available

Abstract: No abstract text available
Text: , TOKYO, 110-8534 JAPAN 91003 TS IM / 13003 TS IM TA-100138 No.7354-1/4 15C02MH Continued from , Collector-to-Emitter Breakdown Voltage V( BR )CBO V( BR )CEO IC=10µA, IE=0 IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V( BR )EBO min typ IE=10µA, IC=0 See specified Test Circuit. Turn-ON Delay


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PDF ENN7354A 15C02MH 15C02MH]
2003 - PC 13003 TRANSISTOR circuit

Abstract: PC 13003 TRANSISTOR 13003 TRANSISTOR 15C02SP
Text: Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003 TS IM / 13003 TS IM TA , Breakdown Voltage Collector-to-Emitter Breakdown Voltage V( BR )CEO Emitter-to-Base Breakdown Voltage min IC=400mA, IB=20mA IC=400mA, IB=20mA IC=10µA, IE=0 V( BR )CBO V( BR )EBO Turn-ON Delay Time


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PDF ENN7356A 15C02SP 15C02SP] PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR 13003 TRANSISTOR 15C02SP
2008 - st 13003 TRANSISTOR npn

Abstract: TR 13003 transistor 13003 transistor smps circuit transistor ST 13003 w, TO-126 electronic ballast for fluorescent lighting 13003 electronic ballast by transistor 13003 electronic ballast 13003 13003 NPN Transistor features 13003 SMPS 13003 transistor
Text: Part number Marking Package Packaging ST13003-K 13003 SOT-32 Bag July 2008 , Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10µs) V( BR )EBO V 1.5 A 3 A Base current , current (VBE = 0) V( BR )EBO Emitter-Base breakdown voltage (IC = 0) Test conditions VCE(sat


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PDF ST13003-K OT-32 st 13003 TRANSISTOR npn TR 13003 transistor 13003 transistor smps circuit transistor ST 13003 w, TO-126 electronic ballast for fluorescent lighting 13003 electronic ballast by transistor 13003 electronic ballast 13003 13003 NPN Transistor features 13003 SMPS 13003 transistor
2011 - transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 st 13003 TRANSISTOR npn transistor ST 13003 w TR 13003 transistor st 13003 w transistor switch 13003 13003 NPN Transistor features 13003 SMPS
Text: . Device summary Marking 13003 Package SOT-32 Packaging Bag Part number ST13003-K June 2011 Doc , ) Total dissipation at TC = 25 °C Storage temperature Operating junction temperature Value 700 400 V( BR , unless otherwise specified. Table 4. Symbol ICES V( BR )EBO VCEO(sus) (1) Electrical characteristics


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PDF ST13003-K OT-32 OT-32 transistor ST 13003 w, TO-126 13003 transistor smps circuit electronic ballast by transistor 13003 st 13003 TRANSISTOR npn transistor ST 13003 w TR 13003 transistor st 13003 w transistor switch 13003 13003 NPN Transistor features 13003 SMPS
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