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    BLS6G3135S-120 Price and Stock

    Ampleon BLS6G3135S-120,112

    RF MOSFET LDMOS 32V SOT502B
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    BLS6G3135S-120 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB Original PDF
    BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor Original PDF
    BLS6G3135S-120,112 NXP Semiconductors LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB; Package: SOT502B (LDMOST); Container: Blister pack Original PDF