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    BLF6G22-180PN Search Results

    BLF6G22-180PN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLF6G22-180PN NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB Original PDF
    BLF6G22-180PN,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT539A Original PDF
    BLF6G22-180PN,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack Original PDF
    BLF6G22-180PN,112 NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS BASESTATION SOT539A Original PDF
    BLF6G22-180PN,135 NXP Semiconductors BLF6G22-180PN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, Large Original PDF
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    BLF6G22-180PN Price and Stock

    Ampleon BLF6G22-180PN,135

    RF MOSFET LDMOS 32V SOT539A
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    DigiKey BLF6G22-180PN,135 Reel
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    Avnet Americas BLF6G22-180PN,135 Reel 100
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    Ampleon BLF6G22-180PN,112

    RF MOSFET LDMOS 32V SOT539A
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    DigiKey BLF6G22-180PN,112 Tray
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    Avnet Americas BLF6G22-180PN,112 Tube 60
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