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LT1012ACH Linear Technology IC OP-AMP, 160 uV OFFSET-MAX, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1037MJ8 Linear Technology IC OP-AMP, 160 uV OFFSET-MAX, 60 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC, CERDIP-8, Operational Amplifier
LT1007MJ8 Linear Technology IC OP-AMP, 160 uV OFFSET-MAX, 8 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC, CERDIP-8, Operational Amplifier
LT1001MJ8 Linear Technology IC OP-AMP, 160 uV OFFSET-MAX, 0.8 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1007MH Linear Technology IC OP-AMP, 160 uV OFFSET-MAX, 8 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1001MH Linear Technology IC OP-AMP, 160 uV OFFSET-MAX, 0.8 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier

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BLF6G10LS-160RN:11 Ampleon Avnet 0 $74.29 $67.99
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BLF6G10LS-160RN112 NXP Semiconductors Rochester Electronics 20 $102.28 $83.10

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BLF6G10LS-160 datasheet (3)

Part Manufacturer Description Type PDF
BLF6G10LS-160RN NXP Semiconductors Power LDMOS transistor Original PDF
BLF6G10LS-160RN,11 NXP Semiconductors BLF6G10LS-160RN - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
BLF6G10LS-160RN:11 NXP Semiconductors BLF6G10LS-160RN - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF

BLF6G10LS-160 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - Not Available

Abstract:
Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 - 29 September 2008 Product data sheet 1 , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor , Package Name BLF6G10LS-160 Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B , 2008 2 of 10 NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor 6. Characteristics , dB % dBc 7.1 Ruggedness in class-AB operation The BLF6G10LS-160 is capable of withstanding a load


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PDF BLF6G10LS-160 BLF6G10LS-160
2008 - BLF6G10LS-135R

Abstract:
Text: ) 60 23 22 45 Gp 30 21 D 15 20 19 0 40 80 0 160 120 PL (W


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PDF BLF6G10LS-135R BLF6G10LS-135R 2360d f4 smd transistor mobile rf power amplifier transistor RF35
2008 - vj1206y224kxb

Abstract:
Text: 40 D 17 20 15 0 40 80 120 0 160 200 PL (W) VDS = 28 V; IDq = 1400 mA; f


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PDF BLF6G10LS-200R BLF6G10LS-200R vj1206y224kxb RF35
2008 - Not Available

Abstract:
Text: BLF6G10LS-200 Power LDMOS transistor 7.2 One-tone CW 22 Gp (dB) 21 20 19 18 17 16 15 0 40 80 120 160


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PDF BLF6G10LS-200 BLF6G10LS-200
2008 - BLC6G10LS-160

Abstract:
Text: D 18 30 17 20 16 10 15 0 40 80 120 160 0 200 240 PL (W , Q1 BLC6G10LS- 160 - R1, R2, R3 SMD resistor 9.1 ; 0.1 W [1] American Technical


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PDF BLF6G10LS-200 BLF6G10LS-200 BLC6G10LS-160 RF35
2009 - transistor 9575

Abstract:
Text: sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , = 1200 mA; PL = 160 W (CW); f = 960 MHz. BLF6G10-160RN_10LS-160RN_1 Product data sheet © NXP , 40 Gp 20 20 18 0 40 80 120 0 160 200 PL (W) VDS = 32 V; IDq = 1200 mA , 0 160 200 PL(PEP) (W) -80 0 Two-tone CW power gain and drain efficiency as functions of , values BLF6G10-160RN_10LS-160RN_1 Product data sheet 160 PL(PEP) (W) VDS = 32 V; IDq = 1200


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
BLF188XRS

Abstract:
Text: -10G BLF6G38-25 BLF6G38-50 BLF6G38LS-100 BLF6G38LS-50 BLF6G38S-25 BLF6H10L- 160 BLF6H10LS- 160 BLF7G10L , -130 BLF7G22L- 160 Available Available Available Available Available Available Available Available , Model ADS-2009 BLF7G22L-200 BLF7G22L-250P BLF7G22LS-100P BLF7G22LS-130 BLF7G22LS- 160 BLF7G22LS , -2009 BLF881S BLF884P BLF884PS BLF888 BLF888A BLF888AS BLF8G09LS-270GW BLF8G09LS-270W BLF8G10L- 160 BLF8G10LS- 160 BLF8G10LS-160V BLF8G10LS-270 BLF8G10LS-270GV BLF8G19LS-170BV BLF8G20LS-200V BLF8G20LS


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PDF 26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112
2008 - BLF3G21-30

Abstract:
Text: - -40 - - - 0.35 BLF6G10LS-160 SOT502B I 2C W-CDMA 800 - 1000 32 22 27 - -42 - - - 0.42 BLC6G10LS- 160 SOT896B I 2C W-CDMA 800 - 1000 32 22.5 27 - -42 - - - 0.42 BLC6G10- 160 SOT895A I 2C W-CDMA , - 1.60 Drivers BLF3G21-30 SOT467C - 2-Tone PHS class A BLF3G21-6 SOT538A , 1.60 6 2 13.5 16 35 20 -23 - - -75 - 10 Drivers BLF3G21


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PDF 400kHz ACPR400) ACPR600) BLF6G10LS-200R OT502B BLF6G10LS-160 OT365C OT539A OT822-1 BLF3G21-30 SOT89-5A blf2043f BLF6G22LS-140 ACPR600 BLF6G10LS-160 BLF6G10LS-135R blf2043 BLC6G10LS-160 BGF1801-10
2010 - Not Available

Abstract:
Text: data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base , the following conditions: VDS = 32 V; IDq = 1200 mA; PL = 160 W (CW); f = 960 MHz. BLF6G10 , 60 ηD Gp (dB) ηD (%) 22 40 Gp 20 20 18 0 40 80 120 0 160 , IMD7 20 −60 18 0 40 80 120 0 160 200 PL(PEP) (W) −80 0 Two-tone CW , data sheet 160 PL(PEP) (W) VDS = 32 V; IDq = 1200 mA; f1 = 959.95 MHz; f2 = 960.05 MHz. Fig


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN
2010 - BLF6G10LS-160RN

Abstract:
Text: sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , = 1200 mA; PL = 160 W (CW); f = 960 MHz. BLF6G10-160RN_10LS-160RN_2 Product data sheet © NXP , 40 Gp 20 20 18 0 40 80 120 0 160 200 PL (W) VDS = 32 V; IDq = 1200 mA , 120 0 160 200 PL(PEP) (W) -80 Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values 160 240 VDS = 32 V; IDq = 1200 mA; f1 = 959.95 MHz


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV nxp TRANSISTOR SMD 13 RF35
2010 - Not Available

Abstract:
Text: 60 Gp Gp (dB) ηD (%) 19 40 ηD 17 20 15 0 40 80 120 0 160


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PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN
2009 - BLF6G10-200RN

Abstract:
Text: (dB) D (%) 19 40 D 17 20 15 0 40 80 120 0 160 200 PL (W) VDS =


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PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 vj1206y224kxb
2010 - Not Available

Abstract:
Text: 0 40 80 0 160 120 PL (W) VDS = 28 V; IDq = 950 mA; f = 881 MHz. Fig 1


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PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN
2010 - 2360D

Abstract:
Text: 22 45 Gp 30 21 D 15 20 19 0 40 80 0 160 120 PL (W) VDS = 28 V


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PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360D BLF6G10LS-135RN 1961 30 TRANSISTOR RF35
2010 - BGA7133

Abstract:
Text: -WAY BLF7G22LS- 160 7G22LS-160/7G22LS-160 Q2, 2010 2300 - 2400 MHz (WiBRO / LTE) 2300 - 2400 49.5 , 27 24 45 6.5 -3 23.5 33.5 BGA7204 SOT617 Parallel, serial 5 160 , 14-bit DAC 160 Msps 3.3 210 80 2x HTQFP80 12x12 DAC1401D125 Dual 14-bit DAC 125 , -bit DAC 160 Msps 3.3 210 77 2x DAC1201D125 Dual 12-bit DAC 125 Msps 3.3 105 65 , 77 2x. 4x. 8x HTQFP100 14x14 DAC1003D160 Dual 10-bit DAC 160 Msps 3.3 210 80


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PDF HTQFP80 12x12 DAC1001D125 10-bit LQFP48 BGA7133 BGA7130 BGA7203 qubic4 BLF7G22-130 BLF6G21-10G SOT502 BLF7G22LS-200 BLF6G22-130 SOT538A
Pallet VHF Power Amplifier

Abstract:
Text: BLF6G10LS-135R SOT502B I 2C-WCDMA 800-1000 28 26.5 20.2 27 -40 BLF6G10LS-160


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PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 Pallet VHF Power Amplifier TELEVISION BLF578 fm band blf574 BLF571 BLA6H1214-500 LDMOS DVB-T transistors 1200w power amplifier power combiner 4 watt VHF
2009 - 2360d

Abstract:
Text: (dB) 60 23 22 45 Gp 30 21 D 15 20 19 0 40 80 0 160 120


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PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST
2010 - BLF6G10LS-200RN

Abstract:
Text: 60 Gp Gp (dB) D (%) 19 40 D 17 20 15 0 40 80 120 0 160 200


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PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN A1118 RF35
2002 - BA 7891 NG

Abstract:
Text: 1000 960 1000 960 960 1900 1880 2200 2200 2200 2700 2700 3600 2025 P1dB (W) 10 40 40 60 160 200 270 300 140 160 250 260 250 160 200 270 100 140 100 50 Matching I/O I/O I/O I/O I/O I/O O I/O I/O I/O I/O I/O , -10* BLF6G22L(S)-40P BLF6G27L(S)-40P BLM7G22S-60PB(G)* BLF6H10L(S)- 160 BLF8G10LS-200GV BLF8G10LS-270GV BLF8G10L(S)-300P* BLP7G09S-140P(G)* BLF8G10L(S)- 160 * BLF7G10L(S)-250 BLF7G20LS-260A* BLF7G20L(S)-250P BLF7G22L(S)- 160 * BLF8G22LS-200GV* BLF8G22LS-270GV* BLF7G27L(S)-100 BLF7G27L(S)-140 BLF6G38(LS)-100 BLD6G21L


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PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB BGU6104 802.11AC
2002 - 6 pin TRANSISTOR SMD CODE CAA

Abstract:
Text: SOT1121 BLF6G27L(S)-40P 2000 2200 60 I/O SOT1212 BLM7G22S-60PB(G)* 1000 160 - SOT467 BLF6H10L(S)- 160 1000 200 I/O SOT1244C 1000 270 I/O SOT1244C , SOT1224 BLP7G09S-140P(G)* 920 960 160 I/O SOT502 BLF8G10L(S)- 160 * 920 Final - , )-250P BLF8G10LS-200GV BLF7G10L(S)-250 1805 250 I/O SOT539 2200 160 I/O SOT502B BLF7G22L(S)- 160 * 2000 2200 200 I/O SOT1244C BLF8G22LS-200GV* 2000 2200


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PDF
2011 - QUBiC4X

Abstract:
Text: future-proof solutions BLF8G10LS- 160 Discrete Doherty amplifiers In addition to the integrated versions , ) BLF6G10(LS)-160RN BLF8G10LS- 160 BLF6G10-200RN BLF6G10LS-200RN BLF7G10LS-250 BLF6G10L(S)-260PRN BLF8G10LS-300P Power LDMOS transistors 2000 ­ 2200 MHz CW P1dB (W) 10 30 40 45 140 160 160 200 200 250 260 300 , BLD6G22L(S)-50 BLF6G22LS-75 BLF7G22LS-100P BLF6G22LS-100 BLF7G22L(S)-130 BLF7G22L(S)- 160 Function , P1dB (W) 10 10 30 60 40 40 45 50 75 100 100 130 160 180 180 200 250 VDS (V) 28 28 28 28 28 28 28


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PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BLP7G10S-140P BGA7202 printed antenna dcs 1800 qubic4 BLF578XR BLF578 WCDMA receiver UMTS baseband
2010 - 23N50

Abstract:
Text: ˆ’60 20.5 (5) 20 6 (7) (8) −70 0 150 18.5 0 50 100 (6) (9) 2 160


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PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 23N50
2012 - UPC8236

Abstract:
Text: 40 40 60 160 200 270 300 140 160 250 260 250 160 200 270 100 140 100 50 Matching I/O I/O I/O I/O I/O , SOT502 SOT1130 Type BLP7G22-10* BLF6G22L(S)-40P BLF6G27L(S)-40P BLM7G22S-60PB(G)* BLF6H10L(S)- 160 BLF8G10LS-200GV BLF8G10LS-270GV BLF8G10L(S)-300P* BLP7G09S-140P(G)* BLF8G10L(S)- 160 * BLF7G10L(S)-250 BLF7G20LS-260A* BLF7G20L(S)-250P BLF7G22L(S)- 160 * BLF8G22LS-200GV* BLF8G22LS-270GV* BLF7G27L(S)-100 BLF7G27L , released for mass production Product highlight: BLF8G10LS- 160 160 W LDMOS power transistor for base


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PDF
2010 - 8140 SOURIAU

Abstract:
Text: 0 50 0 150 100 6 -80 (6) (9) 0 40 80 2 160 120 PL (AV) 4


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PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 8140 SOURIAU BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
2013 - Not Available

Abstract:
Text: ˆ’70 18.5 0 50 0 150 100 6 −80 (6) (9) 0 40 80 2 160 120 PL (AV


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PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN
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