BLF4
Littelfuse
Axial Lead and Cartridge Fuses - Midget
Original
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BLF400-S7
Beijing LEM Electronics
Current Sensor
Original
PDF
BLF400-S7B
Beijing LEM Electronics
Current Sensor
Original
PDF
BLF404
NXP Semiconductors
PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS
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BLF404
NXP Semiconductors
UHF power MOS transistor - Application: Broadcast, PMR and UHF Communication transmitters ; Description: UHF VDMOS RF POWER Transistor ; Efficiency: 55 %; Frequency: 500 MHz; Load power: 4 W; Operating voltage: 12.5 VDC; Power gain: 11.5 dB
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BLF404
Philips Semiconductors
UHF Power MOS Transistor
Original
PDF
BLF404,114
NXP Semiconductors
BLF404 - BLF404 - UHF power MOS transistor
Original
PDF
BLF404,115
NXP Semiconductors
UHF power MOS transistor - Application: Broadcast, PMR and UHF Communication transmitters ; Description: UHF VDMOS RF POWER Transistor ; Efficiency: 55 %; Frequency: 500 MHz; Load power: 4 W; Operating voltage: 12.5 VDC; Power gain: 11.5 dB; Package: SOT409A (CDIP8); Container: Tape reel smd
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PDF
BLF422
Philips Semiconductors
VHF power MOS transistor
Original
PDF
BLF4G10-120
Philips Semiconductors
UHF power LDMOS transistor 120 W LDMOS power transistor for base station applications at frequencies
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PDF
BLF4G10-160
NXP Semiconductors
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
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BLF4G10-160,112
NXP Semiconductors
RF FETs, Discrete Semiconductor Products, TRANSISTOR RF LDMOS SOT502A
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PDF
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
Original
PDF
BLF4G10LS-120,112
Philips Semiconductors
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 1GHZ SOT502B
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BLF4G10LS-160
NXP Semiconductors
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
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BLF4G10LS-160,112
NXP Semiconductors
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 1GHZ SOT502B
Original
PDF
BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor 120 W LDMOS power transistor for base station applications at frequencies
Original
PDF
BLF4G20-110B
Philips Semiconductors
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
Original
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BLF4G20-110B,112
Philips Semiconductors
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 2GHZ SOT502A
Original
PDF
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
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PDF