The Datasheet Archive

BLF245 datasheet (20)

Part Manufacturer Description Type PDF
BLF245 Advanced Semiconductor RF POWER MOSFET, N-Channel Enhancement Mode Original PDF
BLF245 NXP Semiconductors VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 15.5 dB Original PDF
BLF245 NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
BLF245 Philips Semiconductors VHF Power MOS Transistor Original PDF
BLF245 Philips Semiconductors VHF Power MOS Transistor Original PDF
BLF245 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BLF245 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BLF245 Others FET Data Book Scan PDF
BLF245,112 NXP Semiconductors VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 15.5 dB; Package: SOT123A (CRFM4); Container: Blister pack Original PDF
BLF245B NXP Semiconductors VHF push-pull power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 18 dB Original PDF
BLF245B NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
BLF245B Philips Semiconductors VHF push-pull power MOS transistor Original PDF
BLF245B Philips Semiconductors VHF Push-Pull Power MOS Transistor Original PDF
BLF245B Philips Semiconductors VHF Push-Pull Power MOS Transistor Original PDF
BLF245B Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BLF245B Others FET Data Book Scan PDF
BLF245B,112 NXP Semiconductors VHF push-pull power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 18 dB; Package: SOT279A (CDFM4); Container: Blister pack Original PDF
BLF245C Advanced Semiconductor Transistor Original PDF
BLF245C Philips Semiconductors VHF power MOS transistor Original PDF
BLF245C Philips Semiconductors VHF Push-Pull Power MOS Transistor Original PDF

BLF245 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - blf245

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor BLF245 PIN CONFIGURATION FEATURES • High power gain • Low , VHF power MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System , transistor BLF245 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , Product specification VHF power MOS transistor BLF245 MGP168 6 MGP169 12 handbook


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PDF M3D065 BLF245 MBB072 OT123A SCA75 613524/04/pp16 blf245
1998 - philips ferroxcube 4c6

Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 NCO8602 4C6 toroid ECO7703 4c6 philips 14 x 9 x 5mm
Text: APPLICATION NOTE A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 , BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 , Semiconductors A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 1 Application , - 67 % input VSWR 1.6 2 INTRODUCTION The BLF245 is an RF power MOS transistor for , Semiconductors A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 Application Note


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PDF BLF245 NCO8602 SCA57 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 NCO8602 4C6 toroid ECO7703 4c6 philips 14 x 9 x 5mm
1998 - BLF245

Abstract: SOT123 SOT123 Package MGP175
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification , BLF245 PIN CONFIGURATION · High power gain · Low noise figure · Easy power control lfpage 1 , transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL , Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS Tj = 25 °C , Semiconductors Product specification VHF power MOS transistor BLF245 MGP170 0.8 MGP171 240


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PDF BLF245 MBB072 OT123 BLF245 SOT123 SOT123 Package MGP175
2003 - wirelesscommunication

Abstract: MGP175 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf BLF245 iec 947 156-1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION · High power gain · Low noise , MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134 , Philips Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS , Semiconductors Product specification VHF power MOS transistor BLF245 MGP168 6 MGP169 12


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PDF M3D065 BLF245 MBB072 OT123A SCA75 613524/04/pp16 wirelesscommunication MGP175 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf BLF245 iec 947 156-1
MPA92

Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 GZ22 sot123 P101 International Power Sources BH RV transistor
Text: specification VHF power MOS transistor BLF245 PHILIPS INTERNATIONAL SbE D ■711062b 0043602 214 «PHIN , Product specification VHF power MOS transistor BLF245 "HILIPS INTERNATIONAL SbE D M 711Dö5b GD43ÖG3 , Semiconductors Product specification VHF power MOS transistor BLF245 PHILIPS INTERNATIONAL SbE T> 0,8 1 DS , MOS transistor BLF245 PWILIPS INTERNATIONAL ShE T> m 711062b 0043Ö0S T23 BIPHIN APPLICATION , in class-B operation The BLF245 is capable of withstanding a load mismatch corresponding to VSWR =


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PDF TBLF245 OT123 -SOT123 711002b BLF245 T-39-11 7110fl2b MPA92 68W* transistor 68w transistor SOT123 Package GZ22 sot123 P101 International Power Sources BH RV transistor
Not Available

Abstract: No abstract text available
Text: F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION , VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b'lE D LIMITING VALUES In , ODETTSS 3fiE H A P X _ VHF power MOS transistor BLF245 f .l ] “ c'E > N AUER PHILIPS , specification VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE MRA920 crs 25 ^ (PF) 20 , VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE b'lE D APPLICATION INFORMATION FOR


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PDF BLF245 OT123 OT123
1998 - BLW95

Abstract: TV power transistor datasheet BFQ68 Applications RF Power Modules microwave rf transmitter BLW50F blv862 bfg91a blf278 rf power data sheet for BLF147
Text: 32 50 BLF242 BLF245B BLF368 300 32 100 BLF242 2 × BLF245 2 × BLF368 , 13 1 BFG35 BLW81 10 13 1 BFG35 BLF245 (1) 12 12.5 1 BFG35 BLW29 , VOLTAGE (V) PowerMOS 150 BLF242(1) 2 × BLF244 - 12 12.5 150 BLF242(1) BLF245B - 12 12.5 500 BLF244(1) 2 × BLF245 - 60 28 100 BLF242(1) BLF245 (1 , 13 S/F 1 BFG35 BLF245 (1) - 12 12.5 F 35 45 BLW80 BLW29 - 14


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PDF BLY87C BLY89C BLV10 BLW87 BLY88C BLW60C BLV20 BLW83 BLV11 BLW85 BLW95 TV power transistor datasheet BFQ68 Applications RF Power Modules microwave rf transmitter BLW50F blv862 bfg91a blf278 rf power data sheet for BLF147
BLF245

Abstract: sot123 package VHF transistor amplifier circuit
Text: transistor N AMER PHILIPS/DISCRETE BLF245 b^E T> FEATURES • High power gain • Low noise figure â , BLF245 N AtlER PHILIPS/DISCRETE h^E D LIMITING VALUES In accordance with the Absolute Maximum System , btiSBTBl 0DBT1SS 3fi2 HAPX Product specification VHF power MOS transistor BLF245 N AI1ER PHILIPS/DISCRETE , □DEc]EiSb Sll HAPX Product specification VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE b^E , BLF245 N AMER PHILIPS/DISCRETE t,<ÌE J> APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; R


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PDF BLF245 OT123 -SOT123 MBAJ79 BLF245 sot123 package VHF transistor amplifier circuit
"RF Power Modules"

Abstract: BLW85 BLF147 RF Power Modules bfq34 BLW83 BLF244 BLW33 BLF175 BFG35
Text: BFG35 BLV10 8 13 1 BFG35 BLF245 (1) 12 12.5 1 BFG35 BLV11 15 13 , 150 BLF242(1) 2 × BLF244 - 12 12.5 150 BLF242(1) BLF245B - 12 12.5 500 BLF244(1) 2 × BLF245 - 60 28 100 BLF242(1) BLF245 (1) 2 × BLF246 150 , ) INPUT POWER (mW) 1st STAGE 2nd STAGE 3rd STAGE PowerMOS 1 BFG35 BLF245 - BASE , STAGE 3rd STAGE PowerMOS 5 BLF242 2 × BLF244 5 BLF242 BLF245B BLF348 40


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PDF BLV10 BLW87 BLV20 BLW83 BLV11 BLW85 BLW87 BLW83 BLW76 "RF Power Modules" BLW85 BLF147 RF Power Modules bfq34 BLF244 BLW33 BLF175 BFG35
2002 - BLF245

Abstract: MOSFET BLF245 SPECIFICATIONS
Text: BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: PACKAGE STYLE .380 4L FLG · PG = 13 dB Typical at 175 MHz · 30:1 Load VSWR Capability · OmnigoldTM metalization system MAXIMUM RATINGS ID 6.0 A VDS 65 V VGS ±20 V PDISS 68 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C JC 1.8 °C/W


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PDF BLF245 BLF245 MOSFET BLF245 SPECIFICATIONS
sot123 package

Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Text: 65 RF/Microwave Devices RF Power MOS Transistors (cont.) Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) VHF BASE STATIONS (f = 25-175 MHz, Class B Operation) BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 BLF177 BLF247B BLF277 BLF248 , 25-175 MHz, Class B Operation) BLF221 BLF241 BLF244 BLF245 BLF225 TO-39/3, metal can SOT-5/11, metal can , BLF244 BLF245 SOT-123, flange SOT-123, flange SOT-123, flange 5 15 30 28 28 28 400 400 400 13 typ 11 typ


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PDF BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 sot123 package BLF543 BLF221 sot 123 flange SOT-123
BLY32

Abstract: Philips Application BLX15 blf278 108 amplifier RF Power Amplifiers bgy55 blw95 BLF543 blf177 108 amplifier BFQ43 BLW33
Text: BLV33 PowerMOS 5 12 20 BLF2423' BLF2443» BLF2443 1 2 x BLF2443) 2 x BLF2453» 2 x BLF346 BLF348 2 x , BLF2423» BLF2423' BLF2422) 3) 2 x 2 x 2 x 2 x BLF2443* BLF2453' BLF346 BLF1753) BLF368 2 x BLF368 2 x , BLF2451' 12 60 150 12.5 28 28 1st Stage 2nd Stage 3rd Stage Pl (W) Supply Voltage (V) 2 , BLF245 BLF225 12 25 12.5 12.5 IV Base Stations (68 MHz - 87.5 MHz) Input Power (mW) Bipolar 65 65 , BLF245 BLF246 BLF147 30 80 150 28 28 28 1) Class A operation 2) 28 V supply in class A operation


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PDF OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 Philips Application BLX15 blf278 108 amplifier RF Power Amplifiers bgy55 blw95 BLF543 blf177 108 amplifier BFQ43 BLW33
Not Available

Abstract: No abstract text available
Text: supply) BLF241 BLF242 BLF244 BLF245 BLF245B BLF245C BLF175 BLF246B BLF246 BLF276 BLF147 , supply) BLF221 BLF221B BLF241 BLF241E BLF244 BLF245 BLF225 2 2 2 2 6 12 30 12.5


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PDF OT123 OT121 BLF145 BLF175
Not Available

Abstract: No abstract text available
Text: BLF245 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)68# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ Thermal Resistance Junc-Case2.6 Thermal Resistance Junc-Amb. V(GS)th Max. (V)4.5 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)10 @I(D) (A) (Test Condition)10m I(DSS) Max. (A)2.0m @V(DS) (V


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PDF BLF245
motorola mrf

Abstract: MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 DU1230P F2012 MRF151G uf2810p MRF255
Text: PRF134 BLF244 PRF136 BLF245 SA701 BLF245B SE701 DU2810S DU28120T DU28120U PRF136 ST704


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PDF MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 motorola mrf MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 DU1230P F2012 MRF151G uf2810p MRF255
1999 - SD1446

Abstract: SD2910 philips blx15 BLV36 blw97 SD4575 BLW60C BLV103 st cross reference MX0912B350Y
Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31 BLV33 BLV33F BLV36 BLV45/12 BLV58 BLV59 BLV62 BLV75/12 BLV80/28 BLV97CE BLV98CE BLV100 BLV101A BLV101B BLV103 BLV857 BLV861 BLV897 BLV935 BLV945A BLV945B BLV946 BLV947 BLV948 BLV950 BLV958


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PDF BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 blw97 SD4575 BLW60C BLV103 st cross reference MX0912B350Y
MDF-30

Abstract: MDF30 "RF Power Amplifier" MDF30-R 54ALS03 class-A amplifier BLF245 transposers BLF245 equivalent
Text: MDF30-R 30W - RF POWER AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. · · · · · · 87.5 ÷ 108 MHz 28 Volts Input/Output 50 - 50 Pout : 30 W Gain > 30 dB Driver Class A Output stage Class AB Devices: BLF245 or equivalent · · Dimensions (LxWxH): 73.5 x 59 x 17.8mm [2.89" x 2.32" x 0.7"] This picture is a mere example, it does not bind the provided product


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PDF MDF30-R BLF245 GR00006 MDF-30 MDF30 "RF Power Amplifier" MDF30-R 54ALS03 class-A amplifier transposers BLF245 equivalent
MDL-30-R

Abstract: CLASS AB MOSFET RF amplifier Richardson Electronics BLF245 RF MOSFET CLASS AB
Text: MDL30-R 30W - RF AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. · · · · · 87.5 ÷ 108 MHz 28 Volts Input / Output 50 - 50 Pout : 30 W Gain: 16 dB min. Class AB Devices: BLF245 Optional: 50 ÷120MHz in 30MHz segments Optional: Class A biasing · · · · Dimensions (LxWxH): 73.5 x 59 x 17.8mm [2.89" x 2.32" x 0.7"] This picture is a mere example, it does not bind the


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PDF MDL30-R BLF245 120MHz 30MHz GR00070 MDL-30-R CLASS AB MOSFET RF amplifier Richardson Electronics BLF245 RF MOSFET CLASS AB
BLF188XRS

Abstract: BLF574XR,112
Text: BLF245 BLF246 BLF248 BLF278 BLF346 BLF368 BLF369 BLF3G21-30 BLF3G21-6 BLF404 BLF521 BLF542


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PDF 26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112
1995 - SOT123 Package

Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BLY93 BFQ43 datasheet bfq34 application note BFS22
Text: BLF245 12 12.5 12 SOT123 BLF245B - 12.5 - SOT279 BLF225 30 12.5 , ) BLF242 5 28 16 SOT123 BLF244 15 28 17 SOT123 BLF245 30 28 15.5 SOT123 BLF245B 30 28 18 SOT279 BLF246B 60 28 19 SOT161 BLF246 80


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PDF SC08a BLV10 OT123 BLY87C/01 SCD45 SOT123 Package SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BLY93 BFQ43 datasheet bfq34 application note BFS22
2008 - VDMOS

Abstract: BLF878 BLF574 BLF647 SOT539A SOT123 blf246b SOT121B BLF861 blf368
Text: -2 BLF368 SOT262A BLF278 SOT262A BLF248 SOT262A BLF246B SOT161A BLF346 SOT119A BLF245B SOT279A BLF245 SOT123A BLF244 SOT123A BLF242 SOT123A BLF202 SOT409A Matching (V) (W) 470-860


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PDF BLF878 OT979A BLF871 OT467C BLF861A OT540A VDMOS BLF878 BLF574 BLF647 SOT539A SOT123 blf246b SOT121B BLF861 blf368
irf9110

Abstract: SOT-123 SOT123 sot 123 BLF245 BLF246B BLF278 philips ID 35 BLF246 BLF245B
Text: 28 2 4. 5 5 0.8» 10 0. 75 5* 10 0. 6 0.75 60* 40* 4.5* 28 SOT-123 BLF245 PHILIPS N 65 ±20 3 68 ±1000 ±20 2000 28 2 4. 5 10 0. 4* 10 1. 5 10* 10 1. 2 1. 5 125* 75* 11* 28 SOT-123 BLF245B PHILIPS N 65


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PDF BLF242 OT-123 BIF244 BLF245 OT-268 BIF548 OT-262 IRF9Z10 O-220 irf9110 SOT-123 SOT123 sot 123 BLF246B BLF278 philips ID 35 BLF246 BLF245B
MDF-30

Abstract: application MOSFET transmitters fm MDF30 MOSFET BLF245 SPECIFICATIONS BLF245 BLF245 equivalent RES Ingenium Res-Ingenium
Text: MDF-30 PRELIMINARY 30W - RF POWER AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. · · · · · · 87.5 ÷ 108 MHz 28 Volts Input/Output 50 - 50 Pout : 30 W Gain > 30 dB Driver Class A Output stage Class AB Devices: BLF245 or equivalent · · Dimensions (LxWxH): 73.5 x 59 x 17.8mm [2.89" x 2.32" x 0.7"] This picture is a mere example, it does not bind the provided


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PDF MDF-30 BLF245 GR00006 MDF-30 application MOSFET transmitters fm MDF30 MOSFET BLF245 SPECIFICATIONS BLF245 equivalent RES Ingenium Res-Ingenium
1997 - 2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 SD1470 2SC1804
Text: 2SC892 BLF145 BLF177 BLF242 BLF244 BLF245 BLF245B BLF278 BLF378 BLU10/12 BLU20/12 BLU30/12


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PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 SD1470 2SC1804
transistors cross reference list

Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W blf404 BLF246 MRF140 MRF177 sot119a
Text: Type BLF147 MRF174 MRF141 MRF140 BLF246 MRF173 MRF173CQ BLF246B BLF346 MRF173CQ BLF245B MRF136Y BLF245 MRF171A MRF137 BLF175 MRF148A BLF244 MRF136 BLF242 MRF134 BLF404 BLF202 HF


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PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 transistors cross reference list MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W blf404 BLF246 MRF140 MRF177 sot119a
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