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ZG27

Abstract: 55b7 539J aA71 AA-71
Text: A<6 /IG=:5>0 ?@>? FEL G 5B lpbm\abg` \ZiZ[bebmr h 9dV ]b^e^\mkb , B`SgO71 B`D]O ; 5B 7:5VBD : 5B 7:5VBD DhgmZ\m kZmbg` /R^l3 ehZ]0 :555 OPS 65555 OPS 95B 7:5VBD 655555 OPS MZq3 lpbm\abg` ohemZ`^ 7:5VBD MZq3 lpbm\abg` \nkk^gm ; 5B MZq3 lpbm\abg` ihp^k , ikhm^\m^] B`SgO7 95B 7:5VBD Zm <5 : 5B 7:5VBD Zm <5 ; 5B 7:5VBD Zm <5 DZ^Q]7 Oger lhf^ mrib\Ze , >556eJSO4TS6;>9> eJSO69556 eOISBS6=556 DFRTJGJFE 7;5 7 q <7 q /6 65,0 95B 7:5VBD Zm <5 : 5B 7:5VBD Zm


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PDF 555VB F6889 DQD57556556> 655fV ZG27 55b7 539J aA71 AA-71
2005 - AX12

Abstract: DDR400 DDR400B BT122
Text: DATA SHEET 256M bits DDR SDRAM EDD2508AMTA- 5B -E (32M words × 8 bits, DDR400) Description , ) This product became EOL in March, 2007. ©Elpida Memory, Inc. 2005 EDD2508AMTA- 5B -E Ordering , Mbps (max.) Speed bin (CL-tRCD-tRP) EDD2508AMTA- 5B -E M 32M × 8 4 400 DDR400B (3-3-3) Package 66-pin Plastic TSOP (II) Part Number E D D 25 08 A M TA - 5B - E Elpida , SDRAM Density / Bank 25: 256M / 4-bank Speed 5B : DDR400B (3-3-3) Organization 08: x8


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PDF EDD2508AMTA-5B-E DDR400) EDD2508AMTA 66pin 66-pin M01E0107 E0750E10 AX12 DDR400 DDR400B BT122
2005 - AX12

Abstract: DDR400 DDR400B BT122
Text: DATA SHEET 256M bits DDR SDRAM EDD2508AMTA- 5B -E (32M words × 8 bits, DDR400) Description , EDD2508AMTA- 5B -E Ordering Information Part number Mask version Organization (words × bits) Internal banks Data rate Mbps (max.) Speed bin (CL-tRCD-tRP) EDD2508AMTA- 5B -E M 32M × 8 , TA - 5B - E Elpida Memory Type D: Monolithic Device Environment Code E: Lead Free Product Family D: DDR SDRAM Density / Bank 25: 256M / 4-bank Speed 5B : DDR400B (3-3-3) Organization


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PDF EDD2508AMTA-5B-E DDR400) EDD2508AMTA 66pin M01E0107 E0750E10 AX12 DDR400 DDR400B BT122
2005 - AX12

Abstract: DDR400 DDR400B
Text: DATA SHEET 256M bits DDR SDRAM EDD2508ARTA- 5B (32M words × 8 bits, DDR400) Description Pin , Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2005 EDD2508ARTA- 5B Ordering , Mbps (max.) Speed bin (CL-tRCD-tRP) EDD2508ARTA- 5B R 32M × 8 4 400 DDR400B (3-3-3) Package 66-pin Plastic TSOP (II) Part Number E D D 25 08 A R TA - 5B Elpida Memory Type D: Monolithic Device Product Family D: DDR SDRAM Density / Bank 25: 256M / 4-bank Speed 5B : DDR400B


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PDF EDD2508ARTA-5B DDR400) EDD2508ARTA 66pin M01E0107 E0772E10 AX12 DDR400 DDR400B
2005 - AX12

Abstract: DDR400 DDR400B BT122
Text: DATA SHEET 256M bits DDR SDRAM EDD2508ARTA- 5B (32M words × 8 bits, DDR400) Description Pin , , Inc. 2005 EDD2508ARTA- 5B Ordering Information Part number Mask version Organization (words × bits) Internal banks Data rate Mbps (max.) Speed bin (CL-tRCD-tRP) EDD2508ARTA- 5B , E D D 25 08 A R TA - 5B Elpida Memory EO Type D: Monolithic Device Product Family D: DDR SDRAM Density / Bank 25: 256M / 4-bank Speed 5B : DDR400B (3-3-3) Organization 08: x8


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PDF EDD2508ARTA-5B DDR400) EDD2508ARTA 66pin 66-pin M01E0107 E0772E10 AX12 DDR400 DDR400B BT122
Not Available

Abstract: No abstract text available
Text: 7a 7b Q Q Q Q 4a 4b 5a 5b Q 0a QKx# QKx Don't care 1-4 SIO Non-MUX, BL = 2, 1 0 , 2a 2b 3a 3b D Q Q Q Q Q 0a 0b 1a 1b Q Q Q Q 4a 4b 5a 5b D D D D 6a 6b 7a 7b Q , 5a 5b 6a 6b QKx# QKx Don't care 1-6 SIO Non-MUX, BL = 2, 1 0 1 2 3 4 5 , D D D D D D 1a 1b 2a 2b 3a 3b D D 7a 7b Q Q Q Q Q Q 4a 4b 5a 5b 6a 6b Q QKx# QKx , D D D D D 2a 2b 2c 2d 3a 3b 3c 3d Q Q Q Q Q Q Q Q 4a 4b 4c 4d 5a 5b 5c 5d QKx# QKx Don't


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PDF M19202JJ1V0UM00 M19202JJ1V0UM
IPW157E

Abstract: v629
Text: >Q944:9545 Ebe^ Mh2>BPB46445445=85 .87<,.< /,<, .845 BhgmZ\m ZkkZg`^f^gm 5B BhgmZ\m , \m fZm^kbZe Rbeo^k Zeehr BhgmZ\m kZmbg` 5B > 59@ 694U@B374UCB .Q^l2 ehZ]/ 6B> 54@ 694U , ONVDQ.6B/ BhgmZ\m Bnkk^gm .@/ BhgmZ\m Bnkk^gm .@/ L@WHLTL RVHSBGHMF ONVDQ. 5B / 544 644


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PDF IPW157E/ 529dU 7924/ff BPB46445445 mh525V? B374UCB GE57E36Y IPW157E v629
uA22 k

Abstract: No abstract text available
Text: 7a 7b Q Q Q Q 4a 4b 5a 5b Q 0a QKx# QKx Don't care 1-4 SIO Non-MUX, BL = 2, 1 0 , 2a 2b 3a 3b D Q Q Q Q Q 0a 0b 1a 1b Q Q Q Q 4a 4b 5a 5b D D D D 6a 6b 7a 7b Q , 5a 5b 6a 6b QKx# QKx Don't care 1-6 SIO Non-MUX, BL = 2, 1 0 1 2 3 4 5 , D D D D D D 1a 1b 2a 2b 3a 3b D D 7a 7b Q Q Q Q Q Q 4a 4b 5a 5b 6a 6b Q QKx# QKx , D D D D D 2a 2b 2c 2d 3a 3b 3c 3d Q Q Q Q Q Q Q Q 4a 4b 4c 4d 5a 5b 5c 5d QKx# QKx Don't


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PDF M19202JJ1V0UM00 M19202JJ1V0UM uA22 k
2015 - LM 2536

Abstract: No abstract text available
Text: ;9=E/>0;9=E/>E 4FEA?AE4I 9MJWXUMV , , , , , , MZq3 \hgmbghnl \nkk^gm : 5B MZq3 fZdbg` \nkk^gm 755B Fqm^g]^] m^fi3 kZg`^ ni mh 67: Wbma ab`aer ^lmZ[ebla^] k^ebZ[bebmr Smkhg` k^lblmZg\^ Z[bebmr mh lah\d - ob[kZmbhg Nh \aZg`^ h_ lpbm\abg` lmZm^ o^klbhg Zm [k^Zd]hpg h_ [Zmm^kr ohemZ`^ , R^_ehp lhe]^kbg` o^klbhg ZoZbeZ[e^ , RhIS - FLV \hfiebZgm EZTOKJP 4TTPOKJWOSRV Fg^k`r , / Tri3? 63:fl R^e^Zl^ mbf^ MZq3? 855fV .Zm 65B/ : 5B .Zm 78 / MZq3? :fl Bf[b^gm m^fi^kZmnk


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PDF 855fV LM 2536
2003 - EDD5108ADTA-5

Abstract: No abstract text available
Text: Elpida Memory, Inc. 2003 EDD5108ADTA-5 Ordering Information Part number EDD5108ADTA- 5B EDD5108ADTA , E D D 51 08 A D TA - 5B Elpida Memory Type D: Monolithic Device Product Code D: DDR SDRAM Density , : TSOP (II) Speed 5B : DDR400B (3-3-3) 5C: DDR400C (3-4-4) Preliminary Data Sheet E0383E20 (Ver. 2.0 , Symbol Grade -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B -5C, - 5B ×8 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Unit mA mA mA mA mA mA mA mA mA


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PDF EDD5108ADTA-5 DDR400) EDD5108ADTA-5 66-pin M01E0107 E0383E20
JQX1559F1Q

Abstract: VDE48793 544f
Text: 42~~+2}; .JQX1559F1Q/ 7585->?<1 4534 :9A1< <16-B 2FCPQNFO W W W W W W W W W W Fbe^ Nh2> E57895; Fbe^ Nh2>55:=78 /98>-/> 0->- /956 ChgmZ\m ZkkZg`^f^gm 5A0 5B ChgmZ\m k^lblmZg\^ 844fW Chbe ihp^k 544f .Zm 5A :VDC/ ChgmZ\m fZm^kbZe A`SgO60 A`Nb ChgmZ\m kZmbg` 64A 694VAC 884VAC 3 569VDC MZq2 lpbm\abg` \nkk^gm 64A MZq2 lpbm\abg` ihp^k 9444VA M , k^lblmZg\^ =-21>B -:<9@-6 <->583= 5A> 54Hs mh594Hs 54` 5B > 54Hs mh594Hs 9` Hnfb]bmr @01


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PDF JQX1559F1Q/ E57895; 844fW SgO60 694VAC 884VAC 569VDC 9444VA 5444M 944VDC/ JQX1559F1Q VDE48793 544f
2008 - BENDIX ptih-10-6p

Abstract: BENDIX ptih-10-6p drawing FP2000 Bendix Connector Type PTIH-10-6P MN55422 AA116 AA113 4pin mini din wiring BENDIX ptih fpG TRANSDUCER
Text: /4-18 NPT female Code 5b 1/4-18 NPT male Code 5c 7/16-20 UNF female Code 5d 7/16-20 UNF male , o 9/16-18 UNF SAE female Port code 5a 5b 5c 5d 5f 5g 5h 5i 5p 5q 5r 5s Electrical , code FDW 1 CN 2y 5b 6a 1y AA116 Acc. code AA161 AA111 Selection Description Transducer type , range Mating connector with cable FDW 1 CN 2y 5b 6a 1y AA116 There must be a code in each


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PDF FP2000 FP2000 008835-1-EN BENDIX ptih-10-6p BENDIX ptih-10-6p drawing Bendix Connector Type PTIH-10-6P MN55422 AA116 AA113 4pin mini din wiring BENDIX ptih fpG TRANSDUCER
Q 5426

Abstract: BPB46445445 IYB176E
Text: ,65;*,; -*;* 5@0 5B BhgmZ\m ZkkZg`^f^gm BhgmZ\m k^lblmZg\^ 544f BhgmZ\m fZm^kbZe @`Mb0 @`B]N 5B 5@ BhgmZ\m kZmbg` .Q^l2 ehZ]/ RmZg]Zk] Bhbe ihp^k RmZg]Zk]> 894fV? R^glbmbo


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PDF IYB176E/ D57895; BPB46445445 894fV? 644fV 74UCB 74UCB Q 5426 IYB176E
5c sot-23

Abstract: BC807-16 marking 5a1 sot23 5B SOT23 marking 5b sot-23 BC817 sot package sot-23 5C sot23 BC817 BC807-40 BC807-25
Text: BL Galaxy Electrical Production specification PNP General Purpose Amplifier FEATURES BC807-16/-25/-40 Pb Ideally suited for automatic insertion. Lead-free Complementary NPN type available BC817 Epitaxial planar die construction. APPLICATIONS This device is designed for general purpose amplifier and switching applications at currents to1.0A. SOT-23 ORDERING INFORMATION Type No. BC807-16 BC807-25 BC807-40 Marking Package Code 5A1 5B 5C SOT-23 SOT-23 SOT


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PDF BC807-16/-25/-40 BC817 OT-23 BC807-16 BC807-25 BC807-40 BL/SSSTC041 5c sot-23 BC807-16 marking 5a1 sot23 5B SOT23 marking 5b sot-23 BC817 sot package sot-23 5C sot23 BC817 BC807-40 BC807-25
Not Available

Abstract: No abstract text available
Text: rate Mbps (max.) Part number EBD11UD8ADFB- 5B EBD11UD8ADFB-5C Component JEDEC speed bin , Mounted devices EDD5108ADTA- 5B EDD5108ADTA- 5B , -5C Pin Configurations Front side 1 pin 52 pin 53 , Minimum row precharge time (tRP) 0 - 5B -5C 28 29 0 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B 0 1 0 0 1 0 0 0 48H 18ns , period (tRC) - 5B 0 0 1 1 0 1 1 1 37H 55ns*1 0 0 1 1 1 1


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PDF EBD11UD8ADFB-5 EBD11UD8ADFB M01E0107 E0403E30
2003 - DDR400B

Abstract: EBD11UD8ADFB-5B EBD11UD8ADFB-5C elpida DLL circuit
Text: EBD11UD8ADFB-5 Ordering Information Data rate Mbps (max.) Part number EBD11UD8ADFB- 5B EBD11UD8ADFB , ) Gold 184-pin DIMM Mounted devices EDD5108ADTA- 5B EDD5108ADTA- 5B , -5C Pin Configurations , time (tAC) from 0 clock at CL = 2 Minimum row precharge time (tRP) 0 - 5B -5C 28 29 0 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B 0 1 0 0 , Future use 41 Active command period (tRC) - 5B 0 0 1 1 0 1 1 1 37H


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PDF EBD11UD8ADFB-5 EBD11UD8ADFB M01E0107 E0403E30 DDR400B EBD11UD8ADFB-5B EBD11UD8ADFB-5C elpida DLL circuit
2003 - Not Available

Abstract: No abstract text available
Text: Gold Part number EBD11UD8ADFB- 5B EBD11UD8ADFB-5C Mounted devices EDD5108ADTA- 5B EDD5108ADTA- 5B , 0 clock at CL = 2 Minimum row precharge time (tRP) 0 - 5B -5C 0 0 0 0 0 1 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B -5C Minimum active to precharge time (tRAS , command period (tRC) - 5B -5C Auto refresh to active/ Auto refresh command cycle (tRFC) SDRAM tCK cycle max , 0 to 62 - 5B -5C 0 0 0 0 0 0 0 0 0 0 1 1 0 1 0 × 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 42 43 44 45


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PDF EBD11UD8ADFB-5 EBD11UD8ADFB M01E0107 E0403E20
BC807-16W

Abstract: BC807-25W BC807-40W BC807W BC817W 5B marking transistor
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC807W FEATURES Pb High current(max.500mA) Lead-free Low voltage. Complements the BC817W. APPLICATIONS For general purpose amplification and switching. SOT-323 ORDERING INFORMATION Type No. Marking Package Code BC807W 5A/ 5B /5C SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO


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PDF BC807W 500mA) BC817W. OT-323 BL/SSSTF044 BC807-16W BC807-25W BC807-40W BC807W BC817W 5B marking transistor
Not Available

Abstract: No abstract text available
Text: rate Mbps (max.) Part number EBD11ED8ADFB- 5B EBD11ED8ADFB-5C Component JEDEC speed bin , Mounted devices EDD5108ADTA- 5B EDD5108ADTA- 5B , -5C Pin Configurations Front side 1 pin 52 pin 53 , Minimum row precharge time (tRP) 0 - 5B -5C 28 29 0 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B 0 1 0 0 1 0 0 0 48H 18ns , period (tRC) - 5B 0 0 1 1 0 1 1 1 37H 55ns*1 0 0 1 1 1 1


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PDF EBD11ED8ADFB-5 EBD11UD8ADFB M01E0107 E0408E30
BL-5B

Abstract: NOKIA bl 5b BL-5B nokia nokia bl-5b 600MAH ANSMANN
Text: 49 specifications for model/type: A ­ Nok1 (Nokia BL-5B ) Ansmann drawing number / part


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PDF 750mA 375mA 750mA 750mAh 675mAh 600mAh BL-5B NOKIA bl 5b BL-5B nokia nokia bl-5b ANSMANN
2003 - ST93C86

Abstract: d87c257 D27128 NEC AM27020 ST93C76 d2732 UPD6252 NEC D2732 microchip CY7C63000 GAL20AS
Text: P87C51FA-4A P87C51FA-4B P87C51FA-4N P87C51FA-5A P87C51FA- 5B P87C51FA-5N P87C51FA-IA P87C51FA-IB , -5A P87C51FB- 5B P87C51FB-5N P87C51FB-IA P87C51FB-IB P87C51FB-IN P87C51FB-JA P87C51FB-JB P87C51FB-JN P87C51FC-4A P87C51FC-4B P87C51FC-4N P87C51FC-5A P87C51FC- 5B P87C51FC-5N P87C51FC-IA P87C51FC-IB , +5A P87C51RA+ 5B P87C51RA+5N P87C51RA+IA P87C51RA+IB P87C51RA+IN P87C51RA+JA P87C51RA+JB P87C51RA+JN P87C51RA2 P87C51RB+4A P87C51RB+4B P87C51RB+4N P87C51RB+5A P87C51RB+ 5B P87C51RB+5N P87C51RB+IA


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PDF GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 ST93C76 d2732 UPD6252 NEC D2732 microchip CY7C63000 GAL20AS
Not Available

Abstract: No abstract text available
Text: . 2004 EBD25UC8AKFA-5-E Ordering Information Data rate Mbps (max.) Part number EBD25UC8AKFA- 5B , 400 DDR400B (3-3-3) DDR400C (3-4-4) 184-pin DIMM Gold (lead-free) EDD2508AKTA- 5B -E EDD2508AKTA- 5B /5C-E Pin Configurations Front side 1 pin 52 pin 53 pin 93 pin 92 pin 144 pin , Minimum row precharge time (tRP) 0 - 5B -5C 28 29 0 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B 0 1 0 0 1 0 0 0 48H 18ns


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PDF 256MB EBD25UC8AKFA-5-E EBD25UC8AKFA M01E0107 E0602E10
2003 - Not Available

Abstract: No abstract text available
Text: Gold Part number EBD11ED8ADFB- 5B EBD11ED8ADFB-5C Mounted devices EDD5108ADTA- 5B EDD5108ADTA- 5B , at CL = 2 Minimum row precharge time (tRP) 0 - 5B -5C 0 0 0 0 0 1 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B -5C Minimum active to precharge time (tRAS) Module , command period (tRC) - 5B -5C Auto refresh to active/ Auto refresh command cycle (tRFC) SDRAM tCK cycle max , 0 to 62 - 5B -5C 0 0 0 0 0 0 0 0 0 0 1 1 0 1 0 × 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 42 43 44 45


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PDF EBD11ED8ADFB-5 EBD11UD8ADFB M01E0107 E0408E20
2003 - DDR400B

Abstract: EBD11ED8ADFB-5B EBD11ED8ADFB-5C
Text: EBD11ED8ADFB-5 Ordering Information Data rate Mbps (max.) Part number EBD11ED8ADFB- 5B EBD11ED8ADFB , ) Gold 184-pin DIMM Mounted devices EDD5108ADTA- 5B EDD5108ADTA- 5B , -5C Pin Configurations , clock at CL = 2 Minimum row precharge time (tRP) 0 - 5B -5C 28 29 0 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B 0 1 0 0 1 0 0 , 41 Active command period (tRC) - 5B 0 0 1 1 0 1 1 1 37H 55ns*1 0


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PDF EBD11ED8ADFB-5 EBD11UD8ADFB M01E0107 E0408E30 DDR400B EBD11ED8ADFB-5B EBD11ED8ADFB-5C
2003 - DDR400B

Abstract: EBD25UC8AKFA-5C EDD2508AKTA-5B
Text: EBD25UC8AKFA- 5B EBD25UC8AKFA-5C Component JEDEC speed bin (CL-tRCD-tRP) Package 400 DDR400B (3-3-3) DDR400C (3-4-4) Contact pad Mounted devices EDD2508AKTA- 5B EDD2508AKTA- 5B , -5C 184-pin DIMM , Minimum row precharge time (tRP) 0 - 5B -5C 28 29 0 Minimum row active to row active delay (tRRD) Minimum /RAS to /CAS delay (tRCD) - 5B 0 1 0 0 1 0 0 0 48H 18ns , period (tRC) - 5B 0 0 1 1 0 1 1 1 37H 55ns*1 0 0 1 1 1 1


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PDF 256MB EBD25UC8AKFA-5 EBD25UC8AKFA M01E0107 E0353E30 DDR400B EBD25UC8AKFA-5C EDD2508AKTA-5B
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