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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

BJT Transistors Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - "BJT Transistors"

Abstract: BJT Transistors antilog Absolute Value Circuit RMS-to-dc circuit diagram of antilog circuit RMS-to-DC Converter LTC1966 simple bjt circuit DN288
Text: advertisement RMS-to-DC Conversion Just Got Easy ­ Design Note 288 Glen Brisebois and Joseph Petrofsky collector current of bipolar junction transistors . This method suffers from a variety of problems. BJT transistors match and track well over temperature while operating at the same collector current, for example in op amp differential pair input stages intended to run closed loop. However , fact that the bandwidth of a BJT depends on how much current flows through it. Thus, log-antilog


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PDF LTC1966 1-800-4-LINEAR. dn288f "BJT Transistors" BJT Transistors antilog Absolute Value Circuit RMS-to-dc circuit diagram of antilog circuit RMS-to-DC Converter simple bjt circuit DN288
WORKING PRINCIPLE IR SENSOR

Abstract: "BJT Transistors" IR phototransistor TRANSISTOR SUBSTITUTION qrb1114 BJT Transistors phototransistor as sensor parallax infrared sensor WORKING PRINCIPLE OF proximity sensor working principle of encoder
Text: illustrate how this value affects both the sensitivity and the response of the sensor and BJT transistors in


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power BJT PNP spice model

Abstract: BJT Transistors 10E6 OP-260 R21050
Text: BJT transistors to create the input buffer just as the actual device does. However, the rest of the , (Figure 1a) is actually quite similar to the actual device's input stage. The four transistors Q, -Q4 make


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PDF AN-126 OP-260 OP-260. 400ns 500ns power BJT PNP spice model BJT Transistors 10E6 R21050
2010 - BJT Transistors

Abstract: No abstract text available
Text: enhancement MOSFET is a voltage driven, it is a more efficient switch than a BJT transistor. However, the MOSFET requires a higher voltage to turn on as compared with BJT transistors . An enhancement N-channel


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PDF UC3380 UC3380 QW-R502-099 BJT Transistors
2012 - Not Available

Abstract: No abstract text available
Text: , since enhancement MOSFET is a voltage driven, it is a more efficient switch than a BJT transistor. However, the MOSFET requires a higher voltage to turn on as compared with BJT transistors . An enhancement


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PDF UC3380 UC3380 QW-R502-099
2008 - BJT Transistors

Abstract: UC3380 "BJT Transistors" input output bjt npn transistor sot-25 marking SOT25 Transistor Marking C3
Text: more efficient switch than a BJT transistor. However, the MOSFET requires a higher voltage to turn on as compared with BJT transistors . An enhancement N-channel MOSFET can be selected by the following


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PDF UC3380 UC3380 QW-R502-099 BJT Transistors "BJT Transistors" input output bjt npn transistor sot-25 marking SOT25 Transistor Marking C3
2006 - "BJT Transistors"

Abstract: Transistor Marking C3 BJT Transistors Diode Marking C3 M1FH3 L3380 FDN335N sot-25 marking marking pk sot
Text: driven, it is a more efficient switch than a BJT transistor. However, the MOSFET requires a higher voltage to turn on as compared with BJT transistors . An enhancement N-channel MOSFET can be selected by


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PDF L3380 L3380 QW-R502-099 "BJT Transistors" Transistor Marking C3 BJT Transistors Diode Marking C3 M1FH3 FDN335N sot-25 marking marking pk sot
2012 - UD DIODE

Abstract: BJT Transistors equivalent io transistor 131-6 UTC 1316 amplifier
Text: enhancement MOSFET is a voltage driven, it is a more efficient switch than a BJT transistor. However, the MOSFET requires a higher voltage to turn on as compared with BJT transistors . An enhancement N-channel


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PDF UC3380 UC3380 QW-R502-099 UD DIODE BJT Transistors equivalent io transistor 131-6 UTC 1316 amplifier
2008 - 180NM cmos process parameters

Abstract: 180NM nmos Germanium audio Amplifier diagram "BJT Transistors" spice high frequency SiGe bicmos transistor circuit diagram for simple RF transceiver BJT Transistors 180NM mos 130NM cmos process parameters 180NM
Text: 90nmLP 65nmLP 40nmLP Figure 4 ­ Typical fT for NMOS and BJT Transistors in CMOS and SiGe , memories. The RF transceiver requires a smaller die and contains up to thousands of transistors and many of the passive components. The power amplifier consists of a handful of large transistors that


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PDF WFS-FS-21329-9/2008 180NM cmos process parameters 180NM nmos Germanium audio Amplifier diagram "BJT Transistors" spice high frequency SiGe bicmos transistor circuit diagram for simple RF transceiver BJT Transistors 180NM mos 130NM cmos process parameters 180NM
2013 - NXP AVC8T245

Abstract: No abstract text available
Text: . NPN BJT transistors which turn on or off a green or red 2.2 V, 20 mA LED. Three push-button switches , transistors for LEDs. Note: The USB data lines are not connected and there is no USB control available for


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PDF 74AXP1G57 JS-001 JESD22-C101E 74AXP1G57 NXP AVC8T245
1999 - TRANSISTORS BJT list

Abstract: "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP BJT Driver
Text: around for a long time. BJT transistors are made from a silicon bar that has three areas that are doped , is doped to have the opposite polarity. The BJT , like most transistors , come in two types called , Metal Oxide Semiconductor Field Effect Transistors The BJT and JFET have a diode in their input circuit , Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , 7 8 9 BJT Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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PDF SLOA026 TRANSISTORS BJT list "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP BJT Driver
2000 - TRANSISTORS BJT list

Abstract: bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers pnp germanium low power bjt input output bjt npn transistor pnp germanium bjt "BJT Transistors" jfet discrete differential transistor power BJT PNP
Text: around for a long time. BJT transistors are made from a silicon bar that has three areas that are doped , is doped to have the opposite polarity. The BJT , like most transistors , comes in two types called , Field Effect Transistors The BJT and JFET have a diode in their input circuit which controls their mode , . . . . . . . Metal Oxide Semiconductor Field Effect Transistors . . . . . . . . . . . . . . . . . , . . . . 2 2 3 4 6 7 8 8 9 List of Figures 1 2 3 4 5 6 7 8 9 BJT


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PDF SLOA026A TRANSISTORS BJT list bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers pnp germanium low power bjt input output bjt npn transistor pnp germanium bjt "BJT Transistors" jfet discrete differential transistor power BJT PNP
"BJT Transistors"

Abstract: Granberg Granberg dye BFG425 BFG425W High IP3 Low-Noise Amplifier C71P transistor databook BJT 24 TRANSISTOR MAKING BFG425 Power amplifier
Text: derivation of IP35. As a rule of thumb for BJT transistors , the output-IP3 can be estimated from the , with a specific transistor, this general LNA design method can be used for other transistors and , lot codes of transistors , where a small variation in hfe can be expected. Vc in terms of Vsup and , , H. Granberg, Radio Frequency Transistors Principles and Practical Applications, ButterworthHeinemann, 1993, pp. 204-231. 5 . N. Dye, H. Granberg, Radio Frequency Transistors Principles and Practical


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1999 - BFG425

Abstract: amplifier rf 18dbm gain 18db BFG425W BFG425 spice parameters High IP3 Low-Noise Amplifier Granberg BJT IC Vce BFG425 Power amplifier
Text: Point, IP3. A two tone test is used for derivation of IP35. As a rule of thumb for BJT transistors , the , transistors and applications. Introduction: LNA function in today's communication system provides first , different temperatures and for different lot codes of transistors , where a small variation in hfe can be , . Granberg, Radio Frequency Transistors Principles and Practical Applications, ButterworthHeinemann, 1993, pp. 204-231. 5 . N. Dye, H. Granberg, Radio Frequency Transistors Principles and Practical Applications


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lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
Text: the breakdown voltage BVceo and snap-back behavior [5]. For high speed BJT transistors with a very , are generated in the base-collector depletion layer. For advanced high-frequency transistors the , and the test structure contains five transistors in parallel. The measurements are performed at , 5.4 /jm2, 5 transistors in parallel forVbe ~ 0.75,1.05, with a step of = 50mV. The extracted , Bipolar Transistors in the Avalanche regime - Modeling and Application," IEEE Transactions on Electron


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PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
2004 - transformerless power supply using scr

Abstract: EMC 8203 E
Text: in Figure 1. It also shows the pair of parasitic bipolar ( BJT ) transistors that are formed , shown in Figure 2, the transistors thus form a parasitic Silicon Controlled Rectifier (SCR). An SCR


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2010 - "BJT Transistors"

Abstract: MAX11008 IRFZ44N APPLICATION NOTE C1608X7R1C104M IRFZ44N 68HC16 68HC16MODULE-DIP C3225X7R1E106M pin of IRFZ44N
Text: . Diode-connected BJT transistors D1 and D2 sense the temperature of each FET while remaining electrically isolated , C1608C0G1H101K DESIGNATION QTY DESCRIPTION D1, D2 2 npn transistors (3 SOT23) Fairchild MMBT3904


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PDF MAX11008 98/2000/XP MAX11008. MAX11008EVC16 MAX11008EVKIT+ "BJT Transistors" IRFZ44N APPLICATION NOTE C1608X7R1C104M IRFZ44N 68HC16 68HC16MODULE-DIP C3225X7R1E106M pin of IRFZ44N
2010 - abzd

Abstract: "BJT Transistors" IRFZ44NPBF BT3904 BJT Transistors C1608X7R1E105M 2N3904 j19 max1386 0X0066 68HC16MODULE-DIP
Text: real application. Diode-connected BJT transistors U4 and U5 sense , ) U4, U5 2 npn transistors (3 SOT23) Fairchild MMBT3904 (Top Mark: 1A) - 22 Shunts


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PDF MAX1385 2000/XP-compatible MAX1385. 68HC16 68HC16MODULE-DIP) MAX1385 abzd "BJT Transistors" IRFZ44NPBF BT3904 BJT Transistors C1608X7R1E105M 2N3904 j19 max1386 0X0066 68HC16MODULE-DIP
2008 - HDMI SWITCH SCHEMATIC

Abstract: MAX3845UCQ D HDMI to dvi-i Cable pin diagram BLM18EG601 MAX3845 MAX3845UCQ MAX3208EAUB dvi-d 24 pin diagram BJT R59 R54-R59
Text: Ferrite bead Murata BLM18EG601 U15­U18 4 Dual BJT transistors Zetex ZXTD6717E6 Q1 1


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PDF MAX3845/MAX4814E MAX3845 MAX4814E MAX3845/4814EEVKIT MAX3845/MAX4814E HDMI SWITCH SCHEMATIC MAX3845UCQ D HDMI to dvi-i Cable pin diagram BLM18EG601 MAX3845UCQ MAX3208EAUB dvi-d 24 pin diagram BJT R59 R54-R59
2001 - NCP1450ASN50T1

Abstract: bjt audio amplifier pcb layout BJT Transistors TSOP300
Text: , the MOSFET requires a higher voltage to turn on as compared with BJT transistors . An enhancement , 46. NCP1450ASN19T1 Startup/Hold Voltage vs. Output Current (Using BJT ) Vstart/Vhold, STARTUP/HOLD , . Output Current (Using BJT ) Vstart/Vhold, STARTUP/HOLD VOLTAGE (V) 2.0 Vstart Vstart/Vhold , (Using MOSFET) Figure 50. NCP1450ASN50T1 Startup/Hold Voltage vs. Output Current (Using BJT ) http , ) Figure 63. NCP1450ASN19T1 Output Voltage vs. Output Current (Ext. BJT ) Figure 64. NCP1450ASN30T1


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PDF NCP1450A r14525 NCP1450A/D NCP1450ASN50T1 bjt audio amplifier pcb layout BJT Transistors TSOP300
2004 - NCP1450ASN50T1G

Abstract: NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a
Text: voltage to turn on as compared with BJT transistors . An enhancement N-channel MOSFET can be selected by , . NCP1450ASN19T1 Startup/Hold Voltage vs. Output Current (Using BJT ) Vstart/Vhold, STARTUP/HOLD VOLTAGE (V , . NCP1450ASN30T1 Startup/Hold Voltage vs. Output Current (Using BJT ) Vstart/Vhold, STARTUP/HOLD VOLTAGE (V , Figure 50. NCP1450ASN50T1 Startup/Hold Voltage vs. Output Current (Using BJT ) NCP1450A 2 ms/div , vs. Output Current (Ext. BJT ) Figure 64. NCP1450ASN30T1 Output Voltage vs. Output Current (Ext


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PDF NCP1450A NCP1450ASN50T1G NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a
2003 - NCP1450ASN50T1

Abstract: 27T1 bjt ce amplifier DAZ sot23-5 JESD22-A115 JESD78 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 NCP1450ASN33T1
Text: as compared with BJT transistors . An enhancement N-channel MOSFET can be selected by the following , . NCP1450ASN19T1 Startup/Hold Voltage vs. Output Current (Using BJT ) 2.0 Vstart 1.6 NCP1450ASN30T1 L = , . NCP1450ASN30T1 Startup/Hold Voltage vs. Output Current (Using BJT ) 2.0 1.6 Vstart 1.2 Vhold , Current (Using MOSFET) Figure 50. NCP1450ASN50T1 Startup/Hold Voltage vs. Output Current (Using BJT , Output Voltage vs. Output Current (Ext. BJT ) Figure 64. NCP1450ASN30T1 Output Voltage vs. Output


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PDF NCP1450A NCP1450A NCP1450A/D NCP1450ASN50T1 27T1 bjt ce amplifier DAZ sot23-5 JESD22-A115 JESD78 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 NCP1450ASN33T1
2005 - Not Available

Abstract: No abstract text available
Text: voltage to turn on as compared with BJT transistors . An enhancement N−channel MOSFET can be selected , ) Figure 46. NCP1450ASN19T1 Startup/Hold Voltage vs. Output Current (Using BJT ) 2.0 0 2.0 Vstart , Current (Using BJT ) 2.0 1.6 Vstart 1.2 Vhold 0.8 NCP1450ASN50T1 L = 10 mH Q = , Voltage vs. Output Current (Using BJT ) http://onsemi.com 12 100 NCP1450A 2 ms/div VOUT = 1.9 , . NCP1450ASN19T1 Output Voltage vs. Output Current (Ext. BJT ) Figure 64. NCP1450ASN30T1 Output Voltage vs


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PDF NCP1450A NCP1450A NCP1450A/D
2001 - 5 pin IC marking DAZ

Abstract: NCP1450ASN50T1 bjt 100 NCP1450ASN33T1 NCP1450ASN30T1 NCP1450ASN27T1 NCP1450ASN19T1 NCP1450A JESD22 A115
Text: voltage to turn on as compared with BJT transistors . An enhancement N­channel MOSFET can be selected by , 40 60 80 Figure 46. NCP1450ASN19T1 Startup/Hold Voltage vs. Output Current (Using BJT , BJT ) 2.0 1.6 Vstart 1.2 Vhold 0.8 NCP1450ASN50T1 L = 10 µH Q = MGSF3442VT1 , . NCP1450ASN50T1 Startup/Hold Voltage vs. Output Current (Using BJT ) http://onsemi.com 12 100 2 µs/div , . Output Current (Ext. BJT ) Figure 64. NCP1450ASN30T1 Output Voltage vs. Output Current (Ext. BJT


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PDF NCP1450A NCP1450A r14525 NCP1450A/D 5 pin IC marking DAZ NCP1450ASN50T1 bjt 100 NCP1450ASN33T1 NCP1450ASN30T1 NCP1450ASN27T1 NCP1450ASN19T1 JESD22 A115
2002 - NCP1450ASN50T1

Abstract: 5 pin IC marking DAZ TSOP30
Text: voltage to turn on as compared with BJT transistors . An enhancement N­channel MOSFET can be selected by , vs. Output Current (Using BJT ) Vstart/Vhold, STARTUP/HOLD VOLTAGE (V) 2.0 Vstart NCP1450ASN30T1 , MOSFET) Figure 48. NCP1450ASN30T1 Startup/Hold Voltage vs. Output Current (Using BJT ) Vstart/Vhold , Voltage vs. Output Current (Using BJT ) http://onsemi.com 12 NCP1450A 2 ms/div VOUT = 1.9 V, VIN , Output Voltage vs. Output Current (Ext. BJT ) Figure 64. NCP1450ASN30T1 Output Voltage vs. Output


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PDF NCP1450A r14525 NCP1450A/D NCP1450ASN50T1 5 pin IC marking DAZ TSOP30
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