BGM-1 |
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3M
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Uncategorized - Miscellaneous - GLOVE MEDIUM |
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BGM1011 |
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Philips Semiconductors
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MMIC wideband amplifier |
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BGM1011,115 |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 12.2 dBm; Gain: 30 dB; Is: 25.5 mA; NF: 4.7 dB; Output IP3 (3rd order Intercept Point): 23 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
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BGM1011T/R |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 12.2 dBm; Gain: 30 dB; Is: 25.5 mA; NF: 4.7 dB; Output IP3 (3rd order Intercept Point): 23 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V |
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BGM1012 |
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NXP Semiconductors
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BGM1012 - MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 5.6 dBm; Gain: 20.1 dB; Is: 14.6 mA; NF: 4.8 dB; Output IP3 (3rd order Intercept Point): 18 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 3.0 V |
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BGM1012 |
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Philips Semiconductors
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BGM1012,115 |
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NXP Semiconductors
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RF/Microwave Amplifier, 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SOT-363, 6 PIN |
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BGM1012,115 |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 5.6 dBm; Gain: 20.1 dB; Is: 14.6 mA; NF: 4.8 dB; Output IP3 (3rd order Intercept Point): 18 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 3.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
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BGM1012T/R |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 5.6 dBm; Gain: 20.1 dB; Is: 14.6 mA; NF: 4.8 dB; Output IP3 (3rd order Intercept Point): 18 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 3.0 V |
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BGM1013 |
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NXP Semiconductors
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BGM1013 - MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 12 dBm; Gain: 35.5 dB; Is: 27.5 mA; NF: 4.6 dB; Output IP3 (3rd order Intercept Point): 22.7 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V |
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BGM1013 |
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Philips Semiconductors
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Amplifier, MMIC wideband amplifier |
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BGM1013,115 |
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NXP Semiconductors
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BGM1013 - RF/Microwave Amplifier, 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SC-88, SOT-363, 6 PIN |
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BGM1013,115 |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 12 dBm; Gain: 35.5 dB; Is: 27.5 mA; NF: 4.6 dB; Output IP3 (3rd order Intercept Point): 22.7 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
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BGM1013T/R |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 12 dBm; Gain: 35.5 dB; Is: 27.5 mA; NF: 4.6 dB; Output IP3 (3rd order Intercept Point): 22.7 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V |
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BGM1014 |
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NXP Semiconductors
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BGM1014 - MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 11.2 dBm; Gain: 32.3 dB; Is: 21.0 mA; NF: 4.2 dB; Output IP3 (3rd order Intercept Point): 20.5 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V |
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BGM1014 |
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Philips Semiconductors
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BGM1014,115 |
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NXP Semiconductors
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BGM1014 - RF/Microwave Amplifier, 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SC-88, SOT-363, 6 PIN |
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BGM1014,115 |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 11.2 dBm; Gain: 32.3 dB; Is: 21.0 mA; NF: 4.2 dB; Output IP3 (3rd order Intercept Point): 20.5 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
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BGM1014T/R |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 11.2 dBm; Gain: 32.3 dB; Is: 21.0 mA; NF: 4.2 dB; Output IP3 (3rd order Intercept Point): 20.5 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 5.0 V |
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BGM1032N7E6327 |
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Infineon Technologies
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RF Misc ICs and Modules, RF/IF and RFID, MODULE GPS FRONT-END TSNP-7-10 |
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