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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BFY50 Philips Semiconductors Bristol Electronics 26 $1.88 $1.22
BFY50 Continental Device India Ltd TME Electronic Components 798 $0.58 $0.23

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BFY50 datasheet (62)

Part Manufacturer Description Type PDF
BFY50 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
BFY50 Philips Semiconductors Small-signal Transistors Original PDF
BFY50 Philips Semiconductors NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
BFY50 Semelab Medium Power Amplifiers NPN Silicon Planar Transistor - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
BFY50 STMicroelectronics MEDIUM POWER AMPLIFIER Original PDF
BFY50 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BFY50 Crimson Semiconductor Transistor Selection Guide Scan PDF
BFY50 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
BFY50 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
BFY50 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
BFY50 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
BFY50 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
BFY50 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BFY50 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
BFY50 Micro Electronics Semiconductor Device Data Book Scan PDF
BFY50 Micro Electronics Semiconductor Devices Scan PDF
BFY50 Motorola Motorola Transistor Datasheets Scan PDF
BFY50 Motorola The European Selection Data Book 1976 Scan PDF
BFY50 Motorola European Master Selection Guide 1986 Scan PDF
BFY50 Mullard Quick Reference Guide 1977/78 Scan PDF

BFY50 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BFY51

Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BFY501 BS944 silicon planar epitaxial transistors J100
Text: b^E J> m bbSB^l □D277TD fl30 N AMER PHILIPS/DISCRETE IAPX A BFY50 BFY51 BFY52 SILICON , industrial applications. QUICK REFERENCE DATA bfy50 BFY51 bfy52 Collector-base voltage (open emitter , Material Copyrighted By Its Respective Manufacturer BFY50 BFY51 BFY52 ■bb53-ì31 0D27711 77? MAPX N , Temperature T * stg T. max. J THERMAL CHARACTERISTICS R., . . in free air th(j-amb) BFY50 80 80 35 R , Its Respective Manufacturer Silicon planar epitaxial transistors ¡□03 BiAPX BFY50 BFY51 N AMER


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PDF D277TD BFY50 BFY51 BFY52 bfy50 BFY51 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BFY501 BS944 silicon planar epitaxial transistors J100
BFY52

Abstract: bfy50 BFY51 BFY50-BFY51 BFY51 philips
Text: current (max. 1 A) · Low voltage (max. 35 V). BFY50 ; BFY51 ; BFY52 PINNING PIN 1 2 3 emitter base , V V V A mW W BFY50 BFY51 BFY52 VCEO collector-em itter voltage BFY50 BFY51 BFY52 ICM Ptol TI , current total pow er dissipation 30 40 60 DC current gain BFY50 BFY51 BFY52 fT transition frequency lc = 50 mA; VCE = 10 V; f = 100 MHz BFY50 BFY51; BFY52 60 50 MHz MHz 1997 Apr 22 622 Philips Semiconductors Product specification NPN medium power transistors BFY50


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PDF BFY50; BFY51 BFY52 BFY50 BFY51 BFY52 BFY50-BFY51 BFY51 philips
bfy50

Abstract: FY51
Text: itter Breakdown Voltage 0C = 10 mA) BFY50 BFY51 BFY52 BFY50 BFY51 BFY52 V(BR)CEO C ollector-Base , 100°CJ 4 0 V ,T j = 100°C) 30 V, T }= 100°C) BFY50 BFY51 BFY52 V(BR}EB0 ICBO >CBO BFY50 BFY51 BFY52 lEBO 50 2.8 hFE BFY50 BFY51-52 BFY50 BFY51 BFY52 20 30 30 40 60 15 VCE(sat) BFY50 B FY51-52 BFY50 , 3-274 i MOTOROL A SC XSTRS/R F 15E D | b3b75S4 OGabMflb 5 | BFY50 thru BFY52 T-<37 , 6 V, f = 2 0 MHz) BFY50 B FY51-52 hfe BFYSO BFY 51-52 C0 b 12 fr MHz 60 50 10 30 pF 1 Sym bol | M in


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PDF b3b72S4 BFY52 b3b75S4 BFY50 37-rt FY51-52 FY51
1994 - BFY52

Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I
Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50 , BFY51 and BFY52 are silicon , , T j January 1989 Storage and Junction Temperature ­ 65 to 200 °C 1/5 BFY50-BFY51-BFY52 , = 300 µs, duty cycle = 1 %. 2/5 BFY50-BFY51-BFY52 ELECTRICAL CHARACTERISTICS (continued , 60 ns * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 3/5 BFY50-BFY51-BFY52 , L P008B 4/5 BFY50-BFY51-BFY52 Information furnished is believed to be accurate and


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PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I
Bfy51

Abstract: No abstract text available
Text: bTE T m bbS3T31 DDSTTTD A3D H A P X > 1 1 N AMER PHILIPS/DISCRETE I I BFY50 BFY51 BFY52 , purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage (open emitter , 50 002-089 August 1990 395 BFY50 BFY51 BFY52 ■bb53131 QQ27711 777 H A P X N AUER , system. Electrical BFY50 V _ m a x . CBO 40 V 80 60 40 V 30 20 V 6 , 35 K/W bbsa^ai QQ277I b03 15 APX BFY50 BFY51 BFY52 Silicon planar epitaxial


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PDF bbS3T31 BFY50 BFY51 BFY52 Bfy51
1997 - BFY50

Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb
Text: BFY50 /51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial , Parameter Value Unit BFY50 BFY51 V CBO Collector-Base Voltage (IE = 0) 80 60 V , 200 o C 200 o C 1/5 BFY50 /BFY51 THERMAL DATA R t hj-ca se R t hj- amb , I EBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BFY50 V CB = 60 V , ) I C = 100 µA for BFY50 for BFY51 80 60 V V V ( BR)CEO Collector-Emitter Breakdown


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PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY51I bfy50 cb
Not Available

Abstract: No abstract text available
Text: Æ T SGS-THOMSON n© )IIL[iC ή © lsi(S TIS iD S BFY50 /51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case , alue Unit BFY50 80 60 V 30 V V CBO C ollector-B ase V oltage VcEO C o , perature November 1997 200 1/5 BFY50 /BFY51 THERMAL DATA R th j-ca se R th j-a m b Therm , ) P aram eter C ollector C ut-off C urrent (Ie = 0) Max Max Test C o n d itio n s fo r BFY50


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PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY50/BFY51 P008B
1997 - BFY51

Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 ic 709 BFY50 equivalent BP317 BFY51 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50 ; BFY51; BFY52 NPN medium power , BFY50 ; BFY51; BFY52 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 35 , MIN. TYP. MAX. UNIT open emitter BFY50 - 80 V BFY51 - - 60 V BFY52 - - 40 V BFY50 - - 35 V BFY51 - - 30 V BFY52 VCEO , - - 800 mW Tcase 100 °C - - 2.86 W BFY50 30 112 - BFY51


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PDF M3D111 BFY50; BFY51; BFY52 MAM317 SCA54 117047/00/02/pp8 BFY51 transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 ic 709 BFY50 equivalent BP317 BFY51 philips
BFY51

Abstract: BFY50 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52
Text: www.cdil.com BFY50_51_52Rev210701 Continental Device India Limited Data Sheet Page 4 of 4 , SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage VCBO , ) DESCRIPTION SYMBOL IC=10mA,IB=0 VCEO Collector Emitter Voltage 60 BFY50 BFY51 >30 >35 BFY52 , µA <2.5 <2.5 µA Page 1 of 4 SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO


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PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701 BFY51 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52
Not Available

Abstract: No abstract text available
Text: 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com BFY50_51_52Rev210701 Continental Device , SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage , specified otherwise) DESCRIPTION SYMBOL IC=10mA,IB=0 VCEO Collector Emitter Voltage 60 BFY50 , BFY50 , BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO


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PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701
BFY51

Abstract: BFY50
Text: BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal packages intended for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFY50 , axim um lead diam eter is guaranteed o n ly for 12,7 mm. 'X / ' September 1994 593 BFY50 , the absolute maximum sy stem . E lectrical BFY50 V max. C BO V m ax. (c u t-o ff,I, £ 1mA) c t, c , BFY50 BFY51 BFY52 BFY50 E L E C T R I C A L C H A R A C T E R I S T IC S (T = 2 5 °C u n le s s o th


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PDF BFY50 BFY51 BFY52 BFY52
Not Available

Abstract: No abstract text available
Text: 30E d ■Goaiaas ? ■SCS-THOMSON HkHOT®«! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50 , BFY51 and BFY52 are silicon planar , Temperature - 65 to 200 °C 1/3 187 BFY50-BFY51-BFY52 30E D M S G S-THOMSON TRSTSB , 7^2^837 QQ31GG7 □ ■BFY50-BFY51-BFY52 S G S-THOMSON ELECTRICAL CHARACTERISTICS (continued , (Ie =0) Collector Current BFY50 BFY51 BFY52 80 V 60 V 40 V 35 V 30 V


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PDF BFY50-B BFY52 BFY50, BFY51 BFY52 BFY50 BFY51
2002 - BFY50

Abstract: No abstract text available
Text: search for devices beginning " BFY50 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT BFY50 BFY50L Polarity NPN NPN Package TO39 TO5 VCEO 35V 35V IC(cont) 1A 1A HFE , BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 , ) Description 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 12.70 (0.500) min. The BFY50 is a Silicon , Document Numer 3085 Issue 1 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated


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PDF BFY50 BFY50 O-205AD) BFY50" BFY50L 60MHz
2001 - BFY50

Abstract: DATASHEET BFY51 transistor BFY52 BFY52 BFY50-BFY51 BFY50 equivalent bfy51 equivalent BFY51
Text: 5290 e-mail sales@cdil.com www.cdil.com BFY50_51_52Rev210701 Continental Device India Limited , Certified Manufacturer SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO-39 Metal Can Package , SYMBOL VCEO Collector Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V , BFY50 BFY51 >30 >35 BFY52 >20 UNITS V Collector Base Voltage VCBO IC=10µA,IE=0 >80 , BFY50 , BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO


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PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701 DATASHEET BFY51 transistor BFY52 BFY52 BFY50-BFY51 BFY50 equivalent bfy51 equivalent BFY51
2000 - BFY50

Abstract: No abstract text available
Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 , 5W ­65 to 200°C 35°C / W 218°C / W Prelim.02/00 BFY50 ELECTRICAL CHARACTERISTICS (Tcase


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PDF BFY50 BFY50 Ts180 150mA 300ms,
Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BFY50 • V(BR)CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD , NPN TRANSISTOR BFY50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols , ://www.semelab-tt.com Document Number 3085 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR BFY50 MECHANICAL DATA


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PDF BFY50 57mW/Â O-205AD)
2000 - Not Available

Abstract: No abstract text available
Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 , 1A 1.5A 0.8W 5W –65 to 200°C 35°C / W 218°C / W Prelim.02/00 BFY50 ELECTRICAL


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PDF BFY50 BFY50 150mA 300ms,
2012 - Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BFY50 · · · V(BR)CEO = 35V (Min). Hermetic TO-39 Metal Package. Ideally Suited General Purpose Amplifier Applications Screening Options Available · · ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector ­ Base Voltage , TRANSISTOR BFY50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1 , ://www.semelab-tt.com Document Number 3085 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR BFY50 MECHANICAL DATA


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PDF BFY50 O-205AD)
C495 transistor

Abstract: transistor c495 C735 BFY50 equivalent NPN C460 bc300 equivalent c495 u c756 2n1613 equivalent 2n-2411
Text: at 1mA BFY50 BFY51 BFY52 NPN NPN NPN T039 T039 T039 80 35 6 60 30 6 40 20 6 1000 1000 1000 150 30 â , 150 200 J BS9300 C722 BFY50 T05 NPN 80 35 6 30 100 150 50 BS9300 C723 BFY51 T05 NPN 60 30 6 40 , C725 BFY50 T05 NÌN 80 35 6 30 _ 150 50 General Purpose Amplifier and BS93Q0 C726 BFYS1 T05 NPN 60 30


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PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 C495 transistor transistor c495 C735 BFY50 equivalent NPN C460 bc300 equivalent c495 u c756 2n1613 equivalent 2n-2411
2002 - BFY50

Abstract: tc 3085
Text: BFY50 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 max. (0.035 , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Numer 3085 Issue 1 BFY50 ELECTRICAL


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PDF BFY50 BFY50 O-205AD) 150mA tc 3085
2n2222 itt

Abstract: ME6102 ME6002 BSY86 MA8003 BFY72 BFY50 ME8003 fairchild semiconductors 2n2222 micro electronics
Text: BFY50 35 800 30 — 150 0.20 150 12 60 35256G 66 BFY51 30 800 40 — 150 0.35 150 12 50 35257E 66 , 27793A 2N3725 80 50 1* 60 150 100 1.7 40 375 27794X BFY50 80 35 30 — 150 — — 100 31270R BFY51 , 150 0.5 150 120 — 33426B 66 BC302 45 40 240 150 0.5 150 120 — 33427X J BFY50 35 30 — 150 , * 60 5 40-150 2 70 19046E 66 BFY50 0.8 35 1 >30 150 60 19061G 66 BFY51 0.8 30 1 >40 150 60 19062E 66


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PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 itt ME6102 ME6002 BSY86 MA8003 BFY72 BFY50 ME8003 fairchild semiconductors 2n2222 micro electronics
2N1893

Abstract: ZT92 ZT91 ZT88 ZT86 BSY55 BFX85 2N4036 2N2405 2N2102
Text: 80 40 1000 1.0 1000 100 40 250 100 50 50 3700* TO-39 BC160 BFY50 80 35 1000 0.2 150 15 30 - 150 60 , -18 2N2906A 2N2222A 40 800 0.3 150 15 100 300 150 300 20 35 285 150 TO-18 2N2907A BFY50 35 1000 0.2 150 15 , 150 15 150 15 G9 BFY50 80 35 500 80 30 - 150 10 0.20 150 15 60 12 G9 2N1613 75 50* 10 60 40 120 150


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PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 ZT92 ZT91 ZT88 ZT86 BSY55 BFX85 2N4036 2N2405 2N2102
BF 194 transistor

Abstract: BF 194 npn transistor transistor bf 194 BF 194 TRANSISTORS BSY82 C22B BSY81 BFY52 BFY51 BFY50
Text: < 35 « 194) < 10 90 BSY 86 120 64 7 1 0,9 5 200 < 35 (< 194) < 10 90 BFY50 80 35 6 1 0 , 86 > 35 >75 100. 300 > 40 > 20 < 1 130 10/50 < 15 BFY50 (>20) (>30) — (>15) < 1 100


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PDF BSY81 BSY82 BFY50 BFY51 BF 194 transistor BF 194 npn transistor transistor bf 194 BF 194 TRANSISTORS BSY82 C22B BSY81 BFY52 BFY51 BFY50
2N2222A 338

Abstract: TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
Text: 5MA 5MA 5MA IMA ALG ALG ALG ALG VLA OBS OBS OBS OBS RCU BFY50 BFY50 BFY50 BFY50 AF124 2N2297 , AMG ALG ALG ALG ALG MOB OBS OBS OBS OBS ACY17 BFY50 BFY50 BFY50 BFY50 2N1176 2N2297 2N2297 2N2297 , ALG ALG ALG ALG ALG OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BFY50 2N2297 2N2297 2N2297 2N2297 , 10MA ALG ALG ALG ALG ALG OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BFY50 2N2297 2N2297 2N2297 , ALG ALG ALH OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BSW66 2N2297 2N2297 2N2297 2N2297 2N1893 0


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PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
SGS-ATES c426

Abstract: ME6002 BFR97 ME6101 BC125 SGS-Ates sgs-ates transistors BC300 BC302 C426
Text: 40 240 150 0.5 150 120 — 33426B 66 BC302 45 40 240 150 0.5 150 120 — 33427X J BFY50 35 30 â , * 60 5 40-150 2 70 19046E 66 BFY50 0.8 35 1 >30 150 60 19061G 66 BFY51 0.8 30 1 >40 150 60 19062E 66


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PDF 19578D BC125 19480B BC142 19491G BC300 33425D BC301 33426B BC302 SGS-ATES c426 ME6002 BFR97 ME6101 SGS-Ates sgs-ates transistors C426
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