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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

BFY50 equivalent Datasheets Context Search

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BFY51

Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BFY501 BS944 silicon planar epitaxial transistors J100
Text: b^E J> m bbSB^l □D277TD fl30 N AMER PHILIPS/DISCRETE IAPX A BFY50 BFY51 BFY52 SILICON , industrial applications. QUICK REFERENCE DATA bfy50 BFY51 bfy52 Collector-base voltage (open emitter , Material Copyrighted By Its Respective Manufacturer BFY50 BFY51 BFY52 ■bb53-ì31 0D27711 77? MAPX N , Temperature T * stg T. max. J THERMAL CHARACTERISTICS R., . . in free air th(j-amb) BFY50 80 80 35 R , Its Respective Manufacturer Silicon planar epitaxial transistors ¡□03 BiAPX BFY50 BFY51 N AMER


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PDF D277TD BFY50 BFY51 BFY52 bfy50 BFY51 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BFY501 BS944 silicon planar epitaxial transistors J100
1994 - BFY52

Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I
Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50 , BFY51 and BFY52 are silicon , Symbol BFY50 BFY51 BFY52 V CBO Collector-base Voltage (I E = 0) 80 V 60 V 40 V , Conditions for BFY50 V CB = 60 V V CB = 60 V for BFY51 V CB = 40 V V CB = 40 V for BFY52 V CB = 30 V , * Collector-base Breakdown Voltage (I E = 0) I C = 100 µA for BFY50 for BFY51 for BFY52 80 60 40 V V V V (B R)CEO * Collector-emitter Breakdown Voltage (I B = 0) I C = 30 mA for BFY50


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PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I
1997 - BFY50

Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb
Text: BFY50 /51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial , Parameter Value Unit BFY50 BFY51 V CBO Collector-Base Voltage (IE = 0) 80 60 V , 200 o C 200 o C 1/5 BFY50 /BFY51 THERMAL DATA R t hj-ca se R t hj- amb , I EBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BFY50 V CB = 60 V , ) I C = 100 µA for BFY50 for BFY51 80 60 V V V ( BR)CEO Collector-Emitter Breakdown


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PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY51I bfy50 cb
1997 - BFY51

Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 ic 709 BFY50 equivalent BP317 BFY51 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50 ; BFY51; BFY52 NPN medium power , BFY50 ; BFY51; BFY52 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 35 , MIN. TYP. MAX. UNIT open emitter BFY50 - 80 V BFY51 - - 60 V BFY52 - - 40 V BFY50 - - 35 V BFY51 - - 30 V BFY52 VCEO , - - 800 mW Tcase 100 °C - - 2.86 W BFY50 30 112 - BFY51


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PDF M3D111 BFY50; BFY51; BFY52 MAM317 SCA54 117047/00/02/pp8 BFY51 transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 ic 709 BFY50 equivalent BP317 BFY51 philips
BFY51

Abstract: BFY50 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52
Text: SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage VCBO , ) DESCRIPTION SYMBOL IC=10mA,IB=0 VCEO Collector Emitter Voltage 60 BFY50 BFY51 >30 >35 BFY52 , µA <2.5 <2.5 µA Page 1 of 4 SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO , VEB=5V, IC=0 DC Current Gain hFE BFY50 BFY51 <50 <50 BFY52 <50 UNITS µA µA


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PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701 BFY51 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage , specified otherwise) DESCRIPTION SYMBOL IC=10mA,IB=0 VCEO Collector Emitter Voltage 60 BFY50 , BFY50 , BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO VEB=5V, IC=0 Tj =100oC VEB=5V, IC=0 DC Current Gain hFE BFY50 BFY51 <50 <50 BFY52 <50


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PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701
NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BC326 BFR81 BFR79 BS9300 TIS90 BFR62
Text: 1.0 1.0 1.6 1.0 1.0 BFT29 BFT30 BFT31 hFE 25 min at 1mA hFE 45 min at 1mA hFE 45 min at 1mA BFY50 , High Current Amplifiers NPN T05 PNP BFT39 BFT79 BFT40 BFT80 BFT41 BFT81 BFY50 BFT60 BFY51 BFT61 , Min. Comments Number Equivalent Outline Polarity VCB VCE VEB hFE hFE IC fi- V V V min. max , C676 2N2907A T0I8 PNP 60 60 5 100 300 150 200 J BS9300 C722 BFY50 T05 NPN 80 35 6 30 100 150 50 , 40 20 6 60 200 150 50 J BS9300 C725 BFY50 T05 NÌN 80 35 6 30 _ 150 50 General Purpose Amplifier


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PDF BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BC326 BFR81 BFR79 BS9300 TIS90 BFR62
2002 - BFY50

Abstract: No abstract text available
Text: BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 , ) Description 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 12.70 (0.500) min. The BFY50 is a Silicon , Document Numer 3085 Issue 1 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated , search for devices beginning " BFY50 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT BFY50 BFY50L Polarity NPN NPN Package TO39 TO5 VCEO 35V 35V IC(cont) 1A 1A HFE


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PDF BFY50 BFY50 O-205AD) BFY50" BFY50L 60MHz
2001 - BFY50

Abstract: DATASHEET BFY51 transistor BFY52 BFY52 BFY50-BFY51 BFY50 equivalent bfy51 equivalent BFY51
Text: Certified Manufacturer SILICON PLANAR TRANSISTORS BFY50 , BFY51, BFY52 TO-39 Metal Can Package , SYMBOL VCEO Collector Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V , BFY50 BFY51 >30 >35 BFY52 >20 UNITS V Collector Base Voltage VCBO IC=10µA,IE=0 >80 , BFY50 , BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO VEB=5V, IC=0 Tj =100oC VEB=5V, IC=0 DC Current Gain hFE BFY50 BFY51 <50 <50 BFY52 <50


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PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701 DATASHEET BFY51 transistor BFY52 BFY52 BFY50-BFY51 BFY50 equivalent bfy51 equivalent BFY51
C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent transistor c495 c637 transistor C735 transistor TRANSISTOR bc107 current gain c372 transistor
Text: BFT40 BFT80 BFT41 BFT81 BFY50 BFT60 BFY51 BFT61 BFY52 BFT62 NPN T018 PNP 2N2221 2N2906 2N2221A , Collector Current BS Type Commercial Case Min. Comments Number Equivalent Outline Polarity , Medium Power Amplifiers BS9300 C676 2N2907A T0I8 PNP 60 60 5 100 300 150 200 J BS9300 C722 BFY50 T05 , Amplifier BS9300 C724 BFY52 T05 NPN 40 20 6 60 200 150 50 J BS9300 C725 BFY50 T05 NÌN 80 35 6 30 _ 150 , 'Near Equivalent TO-5


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PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent transistor c495 c637 transistor C735 transistor TRANSISTOR bc107 current gain c372 transistor
Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BFY50 • V(BR)CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD , NPN TRANSISTOR BFY50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols , ://www.semelab-tt.com Document Number 3085 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR BFY50 MECHANICAL DATA


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PDF BFY50 57mW/Â O-205AD)
C495 transistor

Abstract: C735 transistor c638 transistor C756 TRANSISTOR C644 transistor transistor c495 PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Text: Rating hFE at Collector Current BS Type Commercial Case Min. Comments Number Equivalent , 150 200 J BS9300 C722 BFY50 T05 NPN 80 35 6 30 100 150 50 BS9300 C723 BFY51 T05 NPN 60 30 6 40 , C725 BFY50 T05 NÌN 80 35 6 30 _ 150 50 General Purpose Amplifier and BS93Q0 C726 BFYS1 T05 NPN 60 30 , 0 23 - 12-7 min - 'Near Equivalent TO-5


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PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR C644 transistor transistor c495 PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
2012 - Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BFY50 · · · V(BR)CEO = 35V (Min). Hermetic TO-39 Metal Package. Ideally Suited General Purpose Amplifier Applications Screening Options Available · · ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector ­ Base Voltage , TRANSISTOR BFY50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1 , ://www.semelab-tt.com Document Number 3085 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR BFY50 MECHANICAL DATA


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PDF BFY50 O-205AD)
2002 - BFY50

Abstract: tc 3085
Text: BFY50 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 max. (0.035 , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Numer 3085 Issue 1 BFY50 ELECTRICAL


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PDF BFY50 BFY50 O-205AD) 150mA tc 3085
C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 BF597 bf357 BF594 BF195 equivalent transistor c495
Text: 10 10 2.5 4.0 100 100 1.3 70 2N918 'plastic' equivalent NPN BF357K (2) 30 15 50 , Rating hFE at Collector Current BS Type Commercial Case Min. Comments Number Equivalent , 150 200 J BS9300 C722 BFY50 T05 NPN 80 35 6 30 100 150 50 BS9300 C723 BFY51 T05 NPN 60 30 6 40 , C725 BFY50 T05 NÌN 80 35 6 30 _ 150 50 General Purpose Amplifier and BS93Q0 C726 BFYS1 T05 NPN 60 30 , 0 23 - 12-7 min - 'Near Equivalent TO-5


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PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 BF597 bf357 BF594 BF195 equivalent transistor c495
2n2222 itt

Abstract: ME6102 ME6002 BSY86 MA8003 BFY72 BFY50 ME8003 fairchild semiconductors 2n2222 micro electronics
Text: BFY50 35 800 30 — 150 0.20 150 12 60 35256G 66 BFY51 30 800 40 — 150 0.35 150 12 50 35257E 66 , 27793A 2N3725 80 50 1* 60 150 100 1.7 40 375 27794X BFY50 80 35 30 — 150 — — 100 31270R BFY51 , 150 0.5 150 120 — 33426B 66 BC302 45 40 240 150 0.5 150 120 — 33427X J BFY50 35 30 — 150 , * 60 5 40-150 2 70 19046E 66 BFY50 0.8 35 1 >30 150 60 19061G 66 BFY51 0.8 30 1 >40 150 60 19062E 66


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PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 itt ME6102 ME6002 BSY86 MA8003 BFY72 BFY50 ME8003 fairchild semiconductors 2n2222 micro electronics
2N2222A 338

Abstract: TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
Text: 5MA 5MA 5MA IMA ALG ALG ALG ALG VLA OBS OBS OBS OBS RCU BFY50 BFY50 BFY50 BFY50 AF124 2N2297 , AMG ALG ALG ALG ALG MOB OBS OBS OBS OBS ACY17 BFY50 BFY50 BFY50 BFY50 2N1176 2N2297 2N2297 2N2297 , ALG ALG ALG ALG ALG OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BFY50 2N2297 2N2297 2N2297 2N2297 , 10MA ALG ALG ALG ALG ALG OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BFY50 2N2297 2N2297 2N2297 , ALG ALG ALH OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BSW66 2N2297 2N2297 2N2297 2N2297 2N1893 0


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PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
EQUIVALENT TRANSISTOR bc108

Abstract: bc109 equivalent equivalent transistor of 2n2219a transistor t05 BC107 equivalent transistors BC107 equivalent BC177 equivalent bc325 BFT37 BFQ36
Text: BFT40 BFT80 BFT41 BFT81 BFY50 BFT60 BFY51 BFT61 BFY52 BFT62 NPN T018 PNP 2N2221 2N2906 2N2221A , Signal Transistors BS Type Number Commercial Equivalent Case Outline Polarity Absolute Maximum Rating , Switches BS9365 F010 BS9365 F011 BS9365 F012 BS9365 F012 BS9365 F012 BfX29 BFX30 BFY50 BFY51 RFY5? rôê


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PDF BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 EQUIVALENT TRANSISTOR bc108 bc109 equivalent equivalent transistor of 2n2219a transistor t05 BC107 equivalent transistors BC107 equivalent BC177 equivalent bc325 BFT37 BFQ36
2N1613

Abstract: ZT91 ZT88 ZT86 BFX85 BFX84 2N4036 2N2405 2N2102 2N1893
Text: BC140 80 40 1000 1 0 1000 100 40 250 100 50 50 3700t TO-39 BC160 BFY50 80 35 1000 0-2 150 15 30 — 150 , 100 50 50 37001* T039 BC161 BC140 80 40 1000 1 0 1000 100 40 250 100 50 50 37001" T039 BC160 BFY50 , 2N2222A 40 800 0 3 150 15 100 300 150 300 20 35 285 150 TO-18 2N2907A BFY50 35 1000 0 2 150 15 30 — 150 , 150 T018 2N2907A BFY50 35 1000 0-2 150 15 30 — 150 60 50 55* 360* 150 T039 — ZT81 35 500 0 -2 10


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PDF 2N3571 2N3572 2N2102 2N4036 2N1613 ZT91 ZT88 ZT86 BFX85 BFX84 2N4036 2N2405 2N1893
BFY50-BFY51

Abstract: No abstract text available
Text: /IT ^7# S C S -IH O M S O N RjincoeiiLiCToeffiines BFY50-BFY51 BFY52 M EDIUM -PO W ER AMPLIFIERS DESCRIPTION The BFY50 , BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM O ' l0 - @ NPN O * E ABSOLUTE MAXIMUM RATINGS S ym bo l VcBO VcEO v EBO lc I CM Ptot Collector-base Voltage P aram eter (Ie BFY50 80 V 35 V BF Y 5 1 60 V 30 V 6 V 1 A


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PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50
BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BC209 BC114 BF257 BC113 BC208B
Text: 40 375 27793A 2N3725 80 50 1* 60 150 100 1.7 40 375 27794X BFY50 80 35 30 — 150 — — 100 , BFY50 0.8 35 1 >30 150 60 19061G 66 BFY51 0.8 30 1 >40 150 60 19062E 66 BFY52 0.8 20 1 >60 150 60


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PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC207b BC113 SGS BC208A BC209B BC209 BF257 BC208B
2N2222A zetex

Abstract: ZT91 ZT88 ZT86 BSY55 BFX85 2N4036 2N2405 2N2102 2N1893
Text: 80 40 1000 1.0 1000 100 40 250 100 50 50 3700* TO-39 BC160 BFY50 80 35 1000 0.2 150 15 30 - 150 60 , -18 2N2906A 2N2222A 40 800 0.3 150 15 100 300 150 300 20 35 285 150 TO-18 2N2907A BFY50 35 1000 0.2 150 15


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PDF BSY55 2N2102 2N4036 2N2222A zetex ZT91 ZT88 ZT86 BFX85 2N4036 2N2405 2N1893
bc109 equivalent

Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
Text: BFT40 BFT80 BFT41 BFT81 BFY50 BFT60 BFY51 BFT61 BFY52 BFT62 NPN T018 PNP 2N2221 2N2906 2N2221A , Commercial Equivalent Absolute Maximum Ratings VCBO VEBO PTOT ICA VCE(sat) V ICA IBA Notes BS9363 F014 , 01 Dimensions in mm TO-3 BS Type Number Commercial Equivalent Case Outline Polarity Absolute


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PDF BCW35GP. BFX84 BFX85 BFX86 BCY78 BCY79 BCY58 BCY59 2N720A BC325 bc109 equivalent BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
bc140

Abstract: ZT88 ZT86 BFX85 BFX84 2N4036 2N2405 2N2102 2N1893 ZT93
Text: 3700* TO-39 BC160 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 - 2N1613 75 50 1000 1.5 150 15 , BFY50 35 1000 0.2 150 15 30 - 150 60 50 55* 360* 150 TO-39 - BFX86 35 1000 0.35 150 15 70 - 150 50 50


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PDF 2N3866 2N4427 2N2102 2N4036 bc140 ZT88 ZT86 BFX85 BFX84 2N4036 2N2405 2N1893 ZT93
BC140 equivalent

Abstract: 2n4036 equivalent 2N4427 equivalent 2N3866 equivalent 2N2270 equivalent BS9365 BFS36A BFS36 BAW63A 2N930
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Transistors Diodes Nearest metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking BS/CECC number Page BFS36 L1 2N930 BS9365 F014 13 BAW63 D1 BS9302 F001* 15 BFS36A L2 2N929 BS9365 , 40 250 100 50 50 3700* TO-39 BC160 BFY50 80 35 1000 0.2 150 15 30 - 150 60 50 800 TO-39 - 2N1613 75


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PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2n4036 equivalent 2N4427 equivalent 2N3866 equivalent 2N2270 equivalent
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