The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

BFY 39 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Text: BFY 180, 280, 181, 182, 183, 193, 196 13 SIEGET Silicon Bipolar Microwave Transistors BFY , 5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1, MWP-25, MWP-35 21 Data Book , space agencies, DARA and ESA, respectively, in the frame of the BFY 193/ BFY 450 space evaluation , External Visual Inspection 3.9 Review of Burn-In and Measurements/Check for Lot Acceptance 3.12 , Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9


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PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Text: T- 3/-/S~~ BFY 88 IALGG Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier , Typ. mW °C °C Max. 750 K/W 189 ( TELEFUNKEN ELECTRONIC BFY 88 aiC D ■fi^ODSb 00D5333 fi 7 , flic D ■fi^OOU 0005334 T MALGó T" BFY 88 t CBO 1000 nA 100 10 0.14 Seatttfing limit 50 , I 10 mA I- 3627 6-10 191 TELEFUNKEN ELECTRONIC BFY 88 fllC D ■0^200^ 000S33S 1 ialc6 20 , -92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 Â


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PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
2007 - BFy 90 transistor

Abstract: No abstract text available
Text: BFY 183 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · For low , ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFY , collector lead at the soldering point to the pcb 2007-08-16 1 BFY 183 Electrical Characteristics , 1This test assures V(BR)CE0 > 12V 2007-08-16 2 BFY 183 Electrical Characteristics at TA = 25 , ²-1) ), Gms = |S21e / S12e| 1G 2007-08-16 3 BFY 183 Micro-X1 Package 1.05 ±0.25 1.02 ±0.1


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2001 - NX8300CE-CC

Abstract: NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8504BE-CC NX8504CE-CC NX8300BE-CC
Text: km 10­12 10­12 10­12 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 , 1 550 622 Mb/s: STM-4 (L-4.2, L-4.3) Coaxial *2 10 Gb/s: STM-64 BFY with GPO 1 550 *2 CW Light Source for external modulator BFY 1 550 *2 CW Light Source for external modulator BFY -2 dBm *1 1 550 *2 2.5 Gb/s: STM-16, 360 km EA modulator integrated BFY -2 dBm *1 1 550 *2 2.5 Gb/s: STM-16, 600 km EA modulator integrated BFY *2 2.5 Gb


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PDF NX8504BE-CC NX8504CE-CC NX8504CE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8300BE-CC
transistor BC 575

Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
Text: D m fl'îSO Q 'îb 000533 b 3 IALÛG BFY 90 Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: · Power gain 8 dB (800 MHz) · Noise figure , fl'JHDDSt 0005330 7 « A L Û G BFY 90 1 7 0 1>1 · *f c B -*V W « ·( - 0 0.5 1V VB E , «AL GG BFY 90 7~ ~ £/-/Sr~ 196 3632 A-Ol TELEFUNKEN ELECTRONIC 7. Taping and , order number. Example: B C 238C Order-No. of Type Code forTO-92 Transistors Orientation of transistor on


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PDF 569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: 39 BFW 39A BFW40 BFW40A BFX 10 BFX 15 BFX 70 BFX 71 BFX 72 BFX 99 BFY81 BFY 82 BFY 83 BFY 84 0.4 , 37 38 39 40 41 48 66 67 14/16 15 15 15/18 15 15 15 21 22 21 14/18 BFX 31 23 15 15 15 15 , BFT95H BFT 96 BFW16A BFW17A BFW 39 BFW 39A BFW 40 30 BFW 40 A 32 BFW 43 30 30 30 30 30 30 30 15 15 , BFX 96 BFX 96A BFX 97 B FX97A BFX 99 BFY 50 BFY51 BFY 52 BFY 56 BFY 56A BFY 64 BFY BFY BFY BFY BFY BFY BFY BFY 72 74 75 76 81 82 83 84 14/16 14/16 18 17/18 18 17/18 18 17/18 18 17/18 21 14/18 14/18 14


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BLW25

Abstract: bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
Text: APPLICATIONS Typ f VCC Pin pout BVCBO BVcEO Gehäuse type MHz package BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 BLW 12 470 13 0,1 0,66 36 18 TO-131 BLW 13 470 13 0,75 3,75 , 36 18 TO-129 BLW 14 470 13 , BLW25 SILICON NPN VHF POWER TRANSISTOR High Gain Output for 13 VAM Applications 40 Wat 175 MHz , TRANSISTOR electrical characteristics at 25 °C case temperature (unless otherwise noted) PARAMETER TEST


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PDF BLW25 O-145 toxi175 O-117 T0-60CE S0-104 SO-104 BLW25 bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
BLW20

Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
Text: Typ f VCC Pin pout BVCBO BVcEO Gehäuse type MHz package BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 , BLW20 SILICON NPN VHF POWER TRANSISTOR HIGH GAIN OUTPUT FOR 13 V FM APPLICATIONS » 25 Wat 175 , 3.9 ®J y 8'32- 8'32-UNC-2A-Thread All dimensions are in mm TO-117 absolute maximum , Instruments 2-101 BLW20 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 °C case


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PDF BLW20 32-UNC-2A-Thread O-117 T0-60CE S0-104 SO-104 BLW20 TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
blw 30 or bfw 30

Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Text: APPLICATIONS Typ f VCC Pin pout BVCBO BVcEO Gehäuse type MHz package BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 BLW 12 470 13 0,1 0,66 36 18 TO-131 BLW 13 470 13 0,75 3,75 , 36 18 TO-129 BLW 14 470 13 , BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEVEL CATV APPLICATIONS • Typical fT , TRANSISTOR electrical characteristics at 25 °C case temperature (unless otherwise noted) PARAMETER TEST


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PDF O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Text: performed by the German and European space agencies, DARA and ESA, respectively, in the frame of the BFY 193/ BFY 450 space evaluation program in May, 1995. 11.2.2 Silicon Devices Infineon Technologies , bipolar junction transistors (BJT) of our 3rd generation headed by the BFY 193 passed the ambitious ESA , completed by the larger type variant BFY 196 (ESA/SCC qualification running). Also, the new SIEGET® microwave transistors, our 4th generation with it's largest type variant, the BFY 450, passed the ESA/SCC


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2000 - Not Available

Abstract: No abstract text available
Text: after 200 km after 200 km after 200 km 10­12 10­12 10­12 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 Average Received Power P (dBm) Remark The graphs , monitoring PD CW Light Source with monitoring PD Coaxial 6 20 -2 dBm 20 1 550 1 550 *2 BFY with GPO BFY NX8563LB 20 10 *1 1 550 *2 BFY NX8564LE-CC 7 0.6 1 550 *2 BFY NX8565LE-CC 7 0.6 *1 1 550 *2 BFY NX8570SA 20 20 1 550


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PDF NX8504BE-CC NX8504CE-CC NX8504CE-CC
BLY 33 transistor

Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
Text: BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 , BLW11 SILICON NPN VHF/UHF POWER TRANSISTOR Ideal for CATV Applications Typical Gain Bandwidth , data u= All dimensions are n mm TO- 39 absolute maximum ratings (TCase ~ 25 °C) . 40 V . 20 , SILICON NPN VHF/UHF POWER TRANSISTOR electrical characteristics at 25 °C case temperature (unless , POWER TRANSISTOR SrSEEBGA'N ! vs COLLECTOR CURRENT vcc = 15V f = 200 MHz 0 20 40 60


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PDF BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
BFW 11 oa

Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
Text: Pin pout BVCBO BVcEO Gehäuse type MHz package BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 BLW 12 470 , BLW18 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 °C case temperature , SUPPLY THE BEST PRODUCT POSSIBL BLW18 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN DRIVER FOR 13 V , 16 175 13 0,1 1,4 40 20 TO- 39 BLW 17 175 13 0,1 2,0 36 18 TO-131 BLW 18 175 13 0,5 5,0 36 18 TO


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PDF BLW18 VCB-13V, O-117 T0-60CE S0-104 SO-104 BFW 11 oa bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
2000 - STM-16

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8503BG-CC NX8504BE-CC NX8504CE-CC
Text: 10­11 back to back after 200 km after 200 km after 200 km 10­12 10­12 10­12 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 Average Received , -64 BFY with GPO *2 CW Light Source for external modulator BFY *2 CW Light Source for external modulator BFY *2 2.5 Gb/s: STM-16 EA modulator integrated BFY *2 2.5 Gb/s: STM-16 EA modulator integrated BFY *2 CW Light Source with monitoring PD BFY *1 TYP. *2


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PDF NX8504BE-CC NX8504CE-CC NX8504CE-CC -10ce STM-16 NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8503BG-CC
2001 - NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8504BE-CC NX8504CE-CC 10 gb laser diode
Text: km 10­12 10­12 10­12 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 ­38 ­37 ­36 ­35 ­34 ­33 ­40 ­ 39 , 1 550 622 Mb/s: STM-4 (L-4.2, L-4.3) Coaxial *2 10 Gb/s: STM-64 BFY with GPO 1 550 *2 CW Light Source for external modulator BFY 1 550 *2 CW Light Source for external modulator BFY -2 dBm *1 1 550 *2 2.5 Gb/s: STM-16, 360 km EA modulator integrated BFY -2 dBm *1 1 550 *2 2.5 Gb/s: STM-16, 600 km EA modulator integrated BFY *2 2.5 Gb


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BLW24

Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Text: BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 BLW 12 470 13 0,1 0,66 36 18 TO-131 BLW 13 470 13 0,75 3,75 , 36 18 TO-129 BLW 14 470 13 2 7 36 18 TO-129 BLW 16 175 13 0,1 1,4 40 20 TO- 39 BLW 17 175 13 0,1 2 , BLW24 SILICON NPN VHF POWER TRANSISTOR 271 HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS â , Instruments 2-107 BLW24 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 °C case


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PDF BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
BLY93A

Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Text: Typ f VCC Pin pout BVCBO BVcEO Gehäuse type MHz package BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 , BLW23 SILICON NPN VHF POWER TRANSISTOR • 5 W at 175 MHz, 28 V • Minimum Gain 13 dB â , TRANSISTOR electrical characteristics at 25 °C case temperature (unless otherwise noted) parameter test , TO-129 BLW 16 175 13 0,1 1,4 40 20 TO- 39 BLW 17 175 13 0,1 2,0 36 18 TO-131 BLW 18 175 13 0,5 5,0


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PDF BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
TRANSISTOR BFW 11

Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
Text: 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 BLW 12 470 13 0,1 0,66 36 18 TO-131 BLW 13 470 13 0,75 3,75 , 36 18 TO-129 BLW 14 470 13 2 7 36 18 TO-129 BLW 16 175 13 0,1 1,4 40 20 TO- 39 BLW 17 175 13 0,1 2,0 , BLW13 SILICON NPN VHF POWER TRANSISTOR 673 HIGH GAIN DRIVER FOR 13 V FM APPLICATIONS â , Instruments 2-91 BLW13 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 °C case


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PDF BLW13 O-117 T0-60CE S0-104 SO-104 TRANSISTOR BFW 11 BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
2002 - NX8570SD

Abstract: NX8570*55 transistor NEC D 822 P NX8570SA NX8570SC303-BA NX8570SC307-BA NX8570SC311-BA NX8570SC315-BA NX8570SC318-BA 5291 8-pin
Text: NX8570SC449-BA 38 1544.924 194.05 Positive NX8570SC453-BA 39 1545.322 194.00 Negative , (nm) (THz) 37 1544.526 194.10 Negative 38 1544.924 194.05 Positive 39 , 20 10 1 550 *1 622 Mb/s: STM-4 (L-4.2, L-4.3) Coaxial 10 Gb/s: STM-64 BFY with GPO CW Light Source for external modulator BFY CW Light Source for external modulator BFY 2.5 Gb/s: STM-16, 360 km EA modulator integrated BFY 2.5 Gb/s: STM-16, 600 km EA


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PDF NX8570 NX8570S× NX8570SD NX8570*55 transistor NEC D 822 P NX8570SA NX8570SC303-BA NX8570SC307-BA NX8570SC311-BA NX8570SC315-BA NX8570SC318-BA 5291 8-pin
BLY93

Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Text: Pin pout BVCBO BVcEO Gehäuse type MHz package BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 BLW 12 470 , BLW14 SILICON NPN VHF POWER TRANSISTOR _873 HIGH GAIN OUTPUT FOR 13 V FM APPLICATIONS • 7 , Instruments 2- BLW14 SILICON IM PN VHF POWER TRANSISTOR electrical characteristics at 25 °C case , 16 175 13 0,1 1,4 40 20 TO- 39 BLW 17 175 13 0,1 2,0 36 18 TO-131 BLW 18 175 13 0,5 5,0 36 18 TO


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PDF BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
2002 - ba date sheet

Abstract: NX8571SA NX8571SC303-BA NX8571SC307-BA NX8571SC311-BA NX8571SC315-BA NX8571SC318-BA 10 gb laser diode
Text: NX8571SC449-BA 38 1544.924 194.05 Positive NX8571SC453-BA 39 1545.322 194.00 Negative , (nm) (THz) 37 1544.526 194.10 Negative 38 1544.924 194.05 Positive 39 , 20 10 1 550 *1 622 Mb/s: STM-4 (L-4.2, L-4.3) Coaxial 10 Gb/s: STM-64 BFY with GPO CW Light Source for external modulator BFY CW Light Source for external modulator BFY 2.5 Gb/s: STM-16, 360 km EA modulator integrated BFY 2.5 Gb/s: STM-16, 600 km EA


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PDF NX8571 NX8571S× ba date sheet NX8571SA NX8571SC303-BA NX8571SC307-BA NX8571SC311-BA NX8571SC315-BA NX8571SC318-BA 10 gb laser diode
1999 - microwave transistor bfy193

Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Text: P1, T T1, T2 17 18 19 5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1 , the frame of the BFY 193 / BFY 450 space evaluation programme in May, 1995. Infineon Technologies , Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 Review of Burn-In and , Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 , Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9


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PDF MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: T1, T2 17 18 19 5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1, MWP , the frame of the BFY 193 / BFY 450 space evaluation programme in May, 1995. Infineon Technologies , Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 Review of Burn-In and , Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 , Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9


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PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
bly 2 10

Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Text: BFW 16 CATV 40 25 TO- 39 BFW 17 CATV 40 25 TO- 39 BFX 89 CATV 30 15 TO-72 BFY 90 CATV 30 15 TO-72 BLW11 CATV 40 20 TO- 39 BLW 12 470 13 0,1 0,66 36 18 TO-131 BLW 13 470 13 0,75 3,75 , 36 18 TO-129 BLW 14 470 13 2 7 36 18 TO-129 BLW 16 175 13 0,1 1,4 40 20 TO- 39 BLW 17 175 13 0,1 2 , BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR _ . . 769 FOR LOW NOISE UHF/VHF AMPLIFIER AND , SILICON TRANSISTOR electrical characteristics at 25 °C free-air temperature PARAMETER TEST CONDITIONS


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PDF BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
CJW SOT-23

Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
Text: ) IQI 1 ✓ TO-72 (CB-4) BFX 89 BFY 90 N N TO-72 TO-72 15 15 > 1300 25 0,6 < 0,8 < 6,5 (3) 2 500 < 5 (3) 2 500 2N 5109 SD 1006 SD 1232 SD 1316 1 Z Z Z Z Ì TO- 39 TO- 39 TO- 39 TO- 39 20 30 20 20 > 1200 , 200 180 100 315 < -57 (5) < -40 (51 -51 (5) <-57 (6) < -53 (61 -¿0(7) B _ TO- 39 (CB-71 SD 1005 SD , <6,5 2 500 TO-72 BFY 90 N TO-72 15 >1300 25 <0,8 <5 2 500 (CB-4) BFT50 N TO-72 250 22 3500 10 , 200 <3 10 200 BFW 16A N TO- 39 25 2000 70 2 16 70 200 <6 30 200 9 2N 5109 N TO- 39 20 >1200 50 <3


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PDF CB-71 O-11/' O-117 CB-233 BFP91* CB-233 CJW SOT-23 bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
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