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BFY 20 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
BFY20 BFY20 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
BFY20 BFY20 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
BFY20 BFY20 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

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Catalog Datasheet MFG & Type PDF Document Tags
2003 - NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LA NX8563LAS
Text: 20 10 1 550 *3 2.5 Gb/s: DWDM BFY -40 to +85 20 20 1 550 *3 CW Light Source with monitoring PD single channel wavelength, 50 GHz-spacing BFY - 20 to +70 -40 to , capability for 50 GHz-spacing BFY NX8570SCxxxQ-BA - 20 to +70 -40 to +85 20 20 1 550 , GHz-spacing BFY NX8571SA/SCxxx-BA - 20 to +70 -40 to +85 20 10 1 550 *3 CW Light , wavelength tunable capability for 50 GHz-spacing BFY NX8571SCxxxQ-BA - 20 to +70 -40 to +85 20


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PDF NX8563LA NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LAS
1988 - bfy 40

Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
Text: NX8570SA 10/ 20 mW BFY CW DFB-LD NX8565LE 0.6 mW, 600 km NX8564LE 0.6 mW, 360 km BFY EML DFB-LD NX8560LJ ­2 dBm BFY EML DFB-LD NX8503BG 2 mW Coaxial DFB-LD Short haul up to 20 km STM-1 156 , Coaxial APD NRxxxx 16-pin BFY with Preamp Short haul up to 20 km NR7800BP Coaxial PIN-PD , 622 Mb/s: STM-4 (L-4.2, L-4.3) 10 Gb/s: STM-64 Coaxial BFY with GPO 20 1 550 *2 CW Light Source for external modulator BFY 20 10 1 550*2 CW Light Source for


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PDF P12480EJNV0SG00 bfy 40 STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
2004 - 10 gb laser diode

Abstract: k 2545 NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8340MD NX8340MD-CC NX8340ME stm 64 laser diode 19pin
Text: 10 1 550 *3 CW Light Source for external modulator BFY 20 10 1 550 *3 2.5 Gb/s: DWDM BFY -40 to +85 20 20 1 550 *3 CW Light Source with monitoring PD single channel wavelength, 50 GHz-spacing BFY - 20 to +70 -40 to +85 20 20 1 550 *3 , BFY NX8570SCxxxQ-BA - 20 to +70 -40 to +85 20 20 1 550 *3 CW Light Source with monitoring PD 8 channel wavelength tunable capability for 50 GHz-spacing BFY NX8571SA/SCxxx-BA - 20


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PDF NX8340 NX8340MD 19-pin NX8340ME 10 gb laser diode k 2545 NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8340MD NX8340MD-CC NX8340ME stm 64 laser diode 19pin
2002 - 10 gb laser diode

Abstract: NX8560LJ NX8560MC NX8560MC-BC NX8560MC-CC NX8560MCS NX8560MCS-BC NX8560MCS-CC NX8560SJ stm 64 laser diode
Text: 10 Gb/s: STM-64 19-pin mini BFY - 20 to +70 -40 to +85 -3 dBm 1 550 10 Gb/s: STM , - 20 to +70 -40 to +85 -5 dBm 1 550 *2 2.5 Gb/s: STM-16, 360 km BFY NX8565LE Series - 20 to +70 -40 to +85 -5 dBm 1 550 *2 2.5 Gb/s: STM-16, 600 km BFY NX8566LE Series - 20 to +70 -40 to +85 0 dBm 1 550 *2 2.5 Gb/s: STM-16, 240 km BFY , Forward Current of LD IFLD 150 mA Reverse Voltage of LD VRLD 2.0 V Driver Power


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PDF NX8560MC 19-pin 10 gb laser diode NX8560LJ NX8560MC-BC NX8560MC-CC NX8560MCS NX8560MCS-BC NX8560MCS-CC NX8560SJ stm 64 laser diode
1998 - NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8562LB NX8562LF 10 gb laser diode NEC 6109 SERIES continuous wave light source for dwdm system
Text: for external modulator BFY 1 550 *2 CW Light Source for external modulator BFY 20 , ITUT recommendations, enabling a wide range of applications. FEATURES · Output power Pf = 20 mW , Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC - 20 to +70 °C Storage Temperature Tstg -40 , CHARACTERISTICS (TLD = Tset, TC = - 20 to +70°C) ° Parameter Symbol Conditions MIN. TYP. Unit


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PDF NX8562 NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8562LB NX8562LF 10 gb laser diode NEC 6109 SERIES continuous wave light source for dwdm system
1997 - continuous wave light source for dwdm system

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Text: for external modulator BFY 1 550 *2 CW Light Source for external modulator BFY 20 , Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC - 20 to +70 °C Storage Temperature Tstg -40 , CHARACTERISTICS (TLD = Tset, TC = - 20 to +70°C) ° Parameter Symbol Conditions MIN. TYP. Unit , Forward Current IF Pf = 10 mW 70 125 mA Threshold Current Ith 20 40 mA


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PDF NX8563 continuous wave light source for dwdm system NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563LB NX8563LF 10 gb laser diode
2002 - 362d

Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: for external modulator BFY 1 550 *2 CW Light Source for external modulator BFY 20 , Wavelength monitor function (Etalon Filter, Wavelength monitor PD) · Optical output power : Pf = 20 mW MIN , 300 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC - 20 to +70 °C Storage , Laser Set Temperature Tset Conditions MIN. TYP. MAX. Unit °C Single channel 20


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PDF NX8570 362d 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
2002 - 10 gb laser diode

Abstract: NX8560LJ NX8560MC NX8560MC-BC NX8560MC-CC NX8560MCS NX8560MCS-BC NX8560MCS-CC NX8560SJ STM 64 butterfly 7 pin GPO 80 Km
Text: 10 Gb/s: STM-64 19-pin mini BFY - 20 to +70 -40 to +85 -3 dBm 1 550 10 Gb/s: STM , - 20 to +70 -40 to +85 -5 dBm 1 550 *2 2.5 Gb/s: STM-16, 360 km BFY NX8565LE Series - 20 to +70 -40 to +85 -5 dBm 1 550 *2 2.5 Gb/s: STM-16, 600 km BFY NX8566LE Series - 20 to +70 -40 to +85 0 dBm 1 550 *2 2.5 Gb/s: STM-16, 240 km BFY , Forward Current of LD IFLD 150 mA Reverse Voltage of LD VRLD 2.0 V Driver Power


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2003 - NX8571SCxxxQ-BA

Abstract: No abstract text available
Text: external modulator BFY 20 1 550 *2 20 20 1 550 *2 -40 to +85 20 20 1 , Ratings Unit Forward Current of LD IF 300 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC - 20 to +70 °C Storage Temperature Tstg -40 to +85 °C Lead Soldering , *1 1 609 nm + 20 - 20 pm 2 MHz 45 dB -150 Pf = 10 mW, 20 MHz to 3 GHz


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PDF NX8571SCxxxQ-BA NX8571SCxxxQ-BA
2002 - 362d

Abstract: 315D 346D 377D NX8571SA
Text: for external modulator BFY 1 550 *2 CW Light Source for external modulator BFY 20 , 300 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC - 20 to +70 °C Storage , Laser Set Temperature Tset Conditions MIN. TYP. MAX. Unit °C Single channel 20 , ITU-T 1 35 *1 1 609 nm + 20 - 20 pm 2 MHz 45 dB -150 Pf = 10 mW, 20


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PDF NX8571 362d 315D 346D 377D NX8571SA
2003 - nec nx8562

Abstract: No abstract text available
Text: external modulator BFY 20 1 550 *2 20 20 1 550 *2 -40 to +85 20 20 1 , Wavelength monitor function (Etalon Filter, Wavelength monitor PD) · Optical output power Pf = 20 mW MIN , Ratings Unit Forward Current of LD IF 300 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC - 20 to +70 °C Storage Temperature Tstg -40 to +85 °C Lead Soldering


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PDF NX8570SCxxxQ-BA NX8570SCxxxQ-BA nec nx8562
2000 - Not Available

Abstract: No abstract text available
Text: -64 EA modulator integrated 19-pin mini BFY NX8560LJ Series − 20 to +70 −40 to +85 7 , BFY NX8565LE Series − 20 to +70 −40 to +85 7 −5 dBm 1 550 *2 2.5 Gb/s: STM-16, 600 km EA modulator integrated BFY NX8566LE Series − 20 to +70 −40 to +85 7 , » monitoring PD EA modulator integrated BFY NX8567SAM Series − 20 to +70 −40 to +85 7 â , 150 mA Reverse Voltage of LD VRLD 2.0 V Forward Voltage of Modulator VFEA 1


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PDF NX8560LJ
2001 - NX8300CE-CC

Abstract: NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8504BE-CC NX8504CE-CC NX8300BE-CC
Text: wavelength p = 1 550 nm · Optical output power Pf = 2.0 mW · Wide operating temperature range , 16.0 Case 7.0±0.2 3 4 7.2±0.3 3.7±0.3 1 2 0.3 P.C.D. = 2.0 2­ 2.5 PD 6.0 PD 1.0±0.1 4 3 4­ 0.45 ±0.05 PIN CONNECTIONS 1 PIN CONNECTIONS P.C.D. = 2.0 , mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 2.0 mA Reverse , 2.0 Operating Voltage Vop Pf = 2.0 mW 1.1 1.6 V Threshold Current Ith TC =


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PDF NX8504BE-CC NX8504CE-CC NX8504CE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8300BE-CC
2003 - Not Available

Abstract: No abstract text available
Text: -4 (L-4.2, L-4.3) 2.5 Gb/s: CWDM Coaxial Coaxial BFY BFY BFY BFY *1 20 10 10 20 1 550 1 550 , 20 20 1 550 *3 BFY NX8570SCxxxQ-BA - 20 to +70 -40 to +85 20 20 1 550 *3 BFY NX8571SA/SCxxx-BA - 20 to +70 -40 to +85 20 10 1 550 *3 BFY NX8571SA/SCxxxD-BA - 20 to +70 -40 to +85 20 10 1 550 *3 BFY NX8571SCxxxQ-BA - 20 to +70 -40 to +85 20 10 1 550 *3 BFY *1 TYP. *2 Available for CWDM Wavelengths


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PDF NX8508
gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Text: . V BFY 180 BFY 280 BFY 181 BFY 182 BFY 183 BFY 193 BFY 196 8 8 12 12 12 12 12 mA 4 10 20 35 65 80 , performed by the German and European space agencies, DARA and ESA, respectively, in the frame of the BFY 193/ BFY 450 space evaluation program in May, 1995. 11.2.2 Silicon Devices Infineon Technologies , bipolar junction transistors (BJT) of our 3rd generation headed by the BFY 193 passed the ambitious ESA , completed by the larger type variant BFY 196 (ESA/SCC qualification running). Also, the new SIEGET


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2000 - NR3470MU

Abstract: NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series
Text: Voltage of LD VRLD 2.0 V Forward Voltage of Modulator VFEA 1 V Reverse Voltage of , Temperature TC - 20 to +70 °C Storage Temperature Tstg -40 to +85 °C Lead Soldering , Pf -3 *2 Optical Output Power from Fiber *2 V V 20 IFLD = Iop V 3.0 2.0 mA -0.5 60 °C 80 20 Unit 35 - 2.0 Threshold Current *1 MAX. 2.0 Laser Set Temperature TYP. mA -1 Under modulation , Single channel Under


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PDF NX8560LJ NR3470MU NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series
MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Text: 80 450 7.2 2.2 14.0 ­ Micro-X1 5611/006-02 BFY 181 12 20 175 360 7.5 , BFY 180, 280, 181, 182, 183, 193, 196 13 SIEGET Silicon Bipolar Microwave Transistors BFY , space agencies, DARA and ESA, respectively, in the frame of the BFY 193/ BFY 450 space evaluation , certifications according CECC 20 000/CECC 50 000 covering EN 29 001 (ISO 9001). The history of the GaAs wafer , mW V pF BXY 42-T1 BXY 42-T 50 350 600 > 50 (@ ­ 10µA) 1.0 0.22 ( 20 V


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PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
2000 - thermistor 220

Abstract: No abstract text available
Text: Symbol Pf IFLD VRLD VFEA VREA IFPD VRPD IC VC TC Tstg Tsld Ratings 10 150 2.0 1 4 1 10 1.5 2.5 - 20 to +70 , Under modulation *2 *2 *2 Conditions *1 MIN. 20 50 - 2.0 TYP. MAX. 35 Unit °C mA V V V mA dBm 60 80 -0.5 2.0 IFLD = Iop 7 -3 -1 -2 3.0 2.0 20 1 528 30 10 ITU-T > 37 > 11 , ps ps dB dB *2 40 km SMF under modulation 2.0 23 -10 -8 dB *1 NX8560LJ Series : Tset is a certain point between 20 and 35°C NX8560LJ××× Series : Tset is set at a certain point


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PDF NX8560LJ thermistor 220
2007 - BFy 90 transistor

Abstract: No abstract text available
Text: BFY 183 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · For low , ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFY , Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 , collector lead at the soldering point to the pcb 2007-08-16 1 BFY 183 Electrical Characteristics , -base cutoff current µA ICBO VCB = 20 V, IE = 0 - - 100 VCB = 10 V, IE = 0 -


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2000 - 10 gb laser diode

Abstract: NX8566LE NX8560MC Series bfy 421
Text: Pf 10 mW Forward Current of LD IFLD 150 mA Reverse Voltage of LD VRLD 2.0 , Current IC 1.5 A Cooler Voltage VC 2.5 V Operating Case Temperature TC - 20 , /8565/8566LE Series ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, TC = - 20 to +70°C, unless otherwise , 3 V 1.6 *2 2.0 V 20 mA *2 Under modulation Forward Voltage of LD , Unit 35 20 MAX. 50 Modulation Voltage Threshold Current TYP. IFLD = Iop, Under


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PDF NX8564/8565/8566LE NX8564LE-BC/CC) 10 gb laser diode NX8566LE NX8560MC Series bfy 421
2003 - NX8560LJ

Abstract: NX8560MC NX8560MCS NX8560SJ NX8567SA NX8567SAM NX8567SAS
Text: 150 mA Reverse Voltage of LD VRLD 2.0 V Forward Voltage of Modulator VFEA 1 , dB 10 IFLD = Iop, TLD = Tset, Under modulation Pf V 20 IFLD = Iop 2 mA 3 - 2.0 *2 Modulation Voltage 80 60 °C -0.5 50 *2 Unit 35 20 MAX. 2.0 , %, Under modulation *2 125 ps 2.0 dB IFLD = Iop, Under modulation *2, 4 Is 23 , 20 and 35°C for ITU-T grid wavelength 23 *2 2.48832 Gb/s, PRBS 2 -1, VEA = Vcenter ± 1/2Vmod, IFLD


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2003 - tunable laser diode

Abstract: No abstract text available
Text: BFY *1 *1 1 550 1 550 1 550 1 550 1 550 *3 20 10 10 20 *3 *3 *3 NX8570SA/SCxxxD-BA - 20 to +70 -40 to +85 20 20 1 550 *3 BFY NX8570SCxxxQ-BA - 20 to +70 -40 to +85 20 20 1 550 *3 BFY NX8571SA/SCxxx-BA - 20 to +70 -40 to +85 20 10 1 550 *3 BFY NX8571SA/SCxxxD-BA - 20 to +70 -40 to +85 20 10 1 550 *3 BFY NX8571SCxxxQ-BA - 20 to +70 -40 to +85 20 10 1 550 *3 BFY *1 TYP. *2


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PDF NX8508 tunable laser diode
2001 - NX8303CG-CC

Abstract: NX8304BE-CC STM-16 NX8300BE-CC NX8300CE-CC NX8303BG-CC 10 gb laser diode
Text: output power Pf = 2.0 mW · Wide operating temperature range TC = 0 to +75°C · InGaAs monitor , 0.3 P.C.D. = 2.0 2­ 2.5 PD 6.0 PD 1.0±0.1 4 3 4­ 0.45 ±0.05 PIN CONNECTIONS 1 PIN CONNECTIONS P.C.D. = 2.0 29.3±1.0 8.0 2.5±1.0 0.5±0.2 29.0±1.0 20.0±1.0 , Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 2.0 mA Reverse Voltage of PD VR 15 V Operating Case Temperature TC 0 to +75


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PDF NX8300BE-CC NX8300CE-CC NX8300CE-CC STM-16, NX8303CG-CC NX8304BE-CC STM-16 NX8303BG-CC 10 gb laser diode
2012 - EN2997Y1

Abstract: M83723/84S2025N-CO
Text: Eyelet contacts, Square Flange 200°C or 260°C BFY -17 Receptacle, Stainless Steel, Static Dynamic , contacts BTY-19 Stainless Steel, ‘O’ ring Seal, Solderwell or Eyelet contacts, 200°C or 260°C BFY , Jam Nut Receptacle, Threaded Commercial BTY, BFY and BNY meet European specifications and General Electric spec. GEM50TF3564, Classes A & B. Shell sizes 20 , 24 and 28, consult Amphenol , 83723 III 5015 Crimp Rear Release Matrix Commercial BTY, BFY and BNY meet European


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PDF MIL-DTL-83723, M83723/88Y M83723/88P BTY-17 M83723/90P BTY-14 BFY-14 BNY-14 EN2997Y1 M83723/84S2025N-CO
2001 - hz nec

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC 10 gb laser diode
Text: wavelength p = 1 550 nm · Optical output power Pf = 2.0 mW · Low threshold current Ith = 15 mA , 0.45±0.05 12.7±0.2 16.0 17.0±0.2 PIN CONNECTIONS PIN CONNECTIONS P.C.D. = 2.0 4 , 7.2±0.3 PD 3.7±0.3 1.0±0.1 P.C.D. = 2.0 1 3 Case 4 8.5±0.2 2 LD 12.0±0.15 , Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 2.0 mA Reverse Voltage of PD VR 15 V Operating Case Temperature TC -10 to +85


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PDF NX8503BG-CC NX8503CG-CC NX8503CG-CC hz nec NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC 10 gb laser diode
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